Tiantong Ren

College of Engineering

Works (1)

Updated: April 5th, 2024 14:16

2020 article

A 20-33 GHz Direct-Conversion Transmitter in 45-nm SOI CMOS

2020 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS).

By: T. Ren n, S. Hari n & B. Floyd n 

Contributors: T. Ren n, S. Hari n & B. Floyd n 

author keywords: Transmitter; wide-band; IQ modulator; Gilbert cell; power amplifier; CMOS SOI; millimeter-wave; 5G
TL;DR: This paper presents a 20–33 GHz direct-conversion transmitter implemented in 45-nm RFSOI CMOS technology that features a divider-based quadrature clock generation circuit, two current-combined double-balanced mixers, and a balanced power amplifier (PA) employing stacked FETs. (via Semantic Scholar)
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Added: August 23, 2021

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