Robert J. Trew

A Five-Parameter Model of the AlGaN/GaN HFET

IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(4), 1157–1162.

Modeling of the Gate Leakage Current in AlGaN/GaN HFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(4), 1014–1021.

Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors

JOURNAL OF APPLIED PHYSICS, 116(16).

Toward stimulated interaction of surface phonon polaritons

Journal of Applied Physics, 114(23), 233508.

A Compact Physical AlGaN/GaN HFET Model

IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 639–645.

A Simplified Physical Model of RF Channel Breakdown in AlGaN/GaN HFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(11), 2973–2978.

Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design

2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS).

Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs

SOLID-STATE ELECTRONICS, 80, 23–27.

Research Funding and the PROCEEDINGS OF THE IEEE Centennial

Trew, R. J. (2012, May). PROCEEDINGS OF THE IEEE, Vol. 100, pp. 1273–1277.

Large-Signal Analysis of Terahertz Generation in Submicrometer GaN Diodes

IEEE Sensors Journal, 10(3), 765–771.

Quasi-Coherent Thermal Emission in the Terahertz by Doped Semiconductors

IEEE Sensors Journal, 10(3), 443–450.

Special Issue on Enhancement Algorithms, Methodologies and Technology for Spectral Sensing

Jensen, J. O., Trew, R. J., Woolard, D. L., Gupta, N., Theriault, J.-M., Hayat, M. M., … Gillespie, P. (2010, March). IEEE SENSORS JOURNAL, Vol. 10, pp. 373–378.

AlGaN/GaN HFET Reliability

IEEE MICROWAVE MAGAZINE, 10(4), 116–127.

Predicting the performance of a power amplifier using large-signal circuit simulations of an AlGaN/GaN HFET model

GALLIUM NITRIDE MATERIALS AND DEVICES IV, Vol. 7216.

Terahertz generation in GaN diodes operating in pulsed regime limited by self-heating

Applied Physics Letters, 94(22), 222106.

Nanosensors for defense and security

IEEE SENSORS JOURNAL, Vol. 8, pp. 641–646.

Terahertz emission mediated by surface plasmon polaritons in doped semiconductors with surface grating

Journal of Applied Physics, 103(5), 056101.

Terahertz generation in GaN diodes in the limited space-charge accumulation mode

Journal of Applied Physics, 103(12), 126101.

Quasimonochromatic emission spectra in the near field by polar semiconductor thermal sources

Applied Physics Letters, 90(11), 113106.

Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 54(5), 2061–2067.

RF knee walkout and source access region of unpassivated HFETs

Electronics Letters, 42(24), 1425–1427.

High-frequency solid-state electronic devices

Trew, R. J. (2005, May). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 52, pp. 638–649.

Microwave AlGaN/GaN HFEVs

IEEE MICROWAVE MAGAZINE, 6(1), 56–66.

Special issue on blue sky electronic technologies

Trew, R. J., & Woolard, D. L. (2005, October). PROCEEDINGS OF THE IEEE, Vol. 93, pp. 1687–1690.

Method of making high current, high voltage breakdown field effect transistor

Washington, DC: U.S. Patent and Trademark Office.

High current, high voltage breakdown field effect transistor

Washington, DC: U.S. Patent and Trademark Office.

THE POTENTIAL OF DIAMOND AND SIC ELECTRONIC DEVICES FOR MICROWAVE AND MILLIMETER-WAVE POWER APPLICATIONS

PROCEEDINGS OF THE IEEE, 79(5), 598–620.