Works (27)

Updated: July 5th, 2023 15:57

2015 journal article

A Five-Parameter Model of the AlGaN/GaN HFET

IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(4), 1157–1162.

By: G. Bilbro n & R. Trew n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: AlGaN/GaN; analytic; compact model; continuously differentiable; dc; HEMT; heterojunction field-effect transistor (HFET); physical; physics based; RF
Source: Web Of Science
Added: August 6, 2018

2014 journal article

Modeling of the Gate Leakage Current in AlGaN/GaN HFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(4), 1014–1021.

By: A. Goswami n, R. Trew n & G. Bilbro n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: AlGaN/GaN heterojunction field effect transistors (HFETs); gate leakage; HEMTs; semiconductor device reliability
Source: Web Of Science
Added: August 6, 2018

2014 journal article

Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors

JOURNAL OF APPLIED PHYSICS, 116(16).

By: A. Goswami n, R. Trew n & G. Bilbro n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

2013 journal article

A Compact Physical AlGaN/GaN HFET Model

IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 639–645.

By: D. Hou n, G. Bilbro n & R. Trew n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: AlGaN/GaN heterojunction field-effect transistor (FET) (HFET) models; HFET compact models; nitride-based HFETs
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs

SOLID-STATE ELECTRONICS, 80, 23–27.

By: A. Goswami*, R. Trew* & G. Bilbro*

author keywords: AlGaN/GaN HFET reliability; Gate leakage; HEMTs; Semiconductor device modeling
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Toward stimulated interaction of surface phonon polaritons

Journal of Applied Physics, 114(23), 233508.

By: B. Kong n, R. Trew n & K. Kim n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Sources: Web Of Science, Crossref
Added: August 6, 2018

2012 journal article

A Simplified Physical Model of RF Channel Breakdown in AlGaN/GaN HFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(11), 2973–2978.

By: R. Schimizzi n, R. Trew n & G. Bilbro n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: Avalanche breakdown; impact ionization; microwave FET amplifiers; semiconductor device modeling
Source: Web Of Science
Added: August 6, 2018

2012 conference paper

Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design

2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS).

By: R. Trew n, D. Hou n, R. Schimizzi n, A. Goswami n & G. Bilbro n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: NC State University Libraries
Added: August 6, 2018

2012 article

Research Funding and the PROCEEDINGS OF THE IEEE Centennial

Trew, R. J. (2012, May). PROCEEDINGS OF THE IEEE, Vol. 100, pp. 1273–1277.

By: R. Trew n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

2010 journal article

Large-Signal Analysis of Terahertz Generation in Submicrometer GaN Diodes

IEEE Sensors Journal, 10(3), 765–771.

By: E. Barry n, V. Sokolov n, K. Kim n & R. Trew n

co-author countries: Ukraine πŸ‡ΊπŸ‡¦ United States of America πŸ‡ΊπŸ‡Έ
author keywords: Harmonic power and efficiency analysis; negative differential mobility; resonant circuit; submicrometer GaN diode; terahertz oscillator
Sources: Web Of Science, Crossref
Added: August 6, 2018

2010 journal article

Quasi-Coherent Thermal Emission in the Terahertz by Doped Semiconductors

IEEE Sensors Journal, 10(3), 443–450.

By: B. Kong n, V. Sokolov n, K. Kim n & R. Trew n

co-author countries: Ukraine πŸ‡ΊπŸ‡¦ United States of America πŸ‡ΊπŸ‡Έ
author keywords: 1-D grating; radiative heat transfer; surface plasmon polaritons (SPPs); terahertz radiation; thermal emission
Sources: Web Of Science, Crossref
Added: August 6, 2018

2010 article

Special Issue on Enhancement Algorithms, Methodologies and Technology for Spectral Sensing

Jensen, J. O., Trew, R. J., Woolard, D. L., Gupta, N., Theriault, J.-M., Hayat, M. M., … Gillespie, P. (2010, March). IEEE SENSORS JOURNAL, Vol. 10, pp. 373–378.

By: J. Jensen, R. Trew n, D. Woolard*, N. Gupta*, J. Theriault*, M. Hayat *, Y. Li *, P. Gillespie*

co-author countries: Canada πŸ‡¨πŸ‡¦ China πŸ‡¨πŸ‡³ United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

2009 journal article

AlGaN/GaN HFET Reliability

IEEE MICROWAVE MAGAZINE, 10(4), 116–127.

By: R. Trew n, D. Green & J. Shealy

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

2009 article

Predicting the performance of a power amplifier using large-signal circuit simulations of an AlGaN/GaN HFET model

GALLIUM NITRIDE MATERIALS AND DEVICES IV, Vol. 7216.

By: G. Bilbro n, D. Hou n, H. Yin * & R. Trew n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: GaN; HFET; HEMT; modeling; microwave; large-signal; simulation
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Terahertz generation in GaN diodes operating in pulsed regime limited by self-heating

Applied Physics Letters, 94(22), 222106.

By: E. Barry n, V. Sokolov n, K. Kim n & R. Trew n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: gallium compounds; high field effects; III-V semiconductors; semiconductor diodes; terahertz wave generation
Sources: Web Of Science, Crossref
Added: August 6, 2018

2008 article

Nanosensors for defense and security

IEEE SENSORS JOURNAL, Vol. 8, pp. 641–646.

By: D. Woolard*, R. Trew n, D. Polla, M. Stroscio*, U. Varshney*, J. Jensen*, J. Jensen*, P. Lugli *, M. Aono *

co-author countries: Germany πŸ‡©πŸ‡ͺ Japan πŸ‡―πŸ‡΅ United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Terahertz emission mediated by surface plasmon polaritons in doped semiconductors with surface grating

Journal of Applied Physics, 103(5), 056101.

By: B. Kong n, V. Sokolov n, K. Kim n & R. Trew n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Sources: Web Of Science, Crossref
Added: August 6, 2018

2008 journal article

Terahertz generation in GaN diodes in the limited space-charge accumulation mode

Journal of Applied Physics, 103(12), 126101.

By: E. Barry n, V. Sokolov n, K. Kim n & R. Trew n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Sources: Web Of Science, Crossref
Added: August 6, 2018

2007 journal article

Quasimonochromatic emission spectra in the near field by polar semiconductor thermal sources

Applied Physics Letters, 90(11), 113106.

By: V. Sokolov n, B. Kong  n, K. Kim n & R. Trew n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Sources: Web Of Science, Crossref
Added: August 6, 2018

2006 journal article

Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 54(5), 2061–2067.

By: R. Trew n, Y. Liu n, G. Bilbro n, W. Kuang n, R. Vetury* & J. Shealy*

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: AlGaN/GaN heterostructure field-effect transistors (HFETs); GaN; large-signal operation; nonlinear source resistance
Source: Web Of Science
Added: August 6, 2018

2006 journal article

RF knee walkout and source access region of unpassivated HFETs

Electronics Letters, 42(24), 1425–1427.

By: G. Bilbro n & R. Trew n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: NC State University Libraries
Added: August 6, 2018

2005 article

High-frequency solid-state electronic devices

Trew, R. J. (2005, May). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 52, pp. 638–649.

By: R. Trew n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: microwave solid-state amplifiers; microwave solid-state devices
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Microwave AlGaN/GaN HFEVs

IEEE MICROWAVE MAGAZINE, 6(1), 56–66.

By: R. Trew n, G. Bilbro n, W. Kuang n, Y. Liu  n & H. Yin n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

2005 article

Special issue on blue sky electronic technologies

Trew, R. J., & Woolard, D. L. (2005, October). PROCEEDINGS OF THE IEEE, Vol. 93, pp. 1687–1690.

By: R. Trew n & D. Woolard*

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

1993 patent

Method of making high current, high voltage breakdown field effect transistor

Washington, DC: U.S. Patent and Trademark Office.

By: U. Mishra & R. Trew

Source: NC State University Libraries
Added: August 6, 2018

1992 patent

High current, high voltage breakdown field effect transistor

Washington, DC: U.S. Patent and Trademark Office.

By: U. Mishra & R. Trew

Source: NC State University Libraries
Added: August 6, 2018

1991 journal article

THE POTENTIAL OF DIAMOND AND SIC ELECTRONIC DEVICES FOR MICROWAVE AND MILLIMETER-WAVE POWER APPLICATIONS

PROCEEDINGS OF THE IEEE, 79(5), 598–620.

By: R. Trew n, J. Yan  n & P. Mock n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

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