Works (27)

2015 journal article

A five-parameter model of the AlGaN/GaN HFET

IEEE Transactions on Electron Devices, 62(4), 1157–1162.

By: G. Bilbro & R. Trew

Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

Modeling of the gate leakage current in AlGaN/GaN HFETs

IEEE Transactions on Electron Devices, 61(4), 1014–1021.

By: A. Goswami, R. Trew & G. Bilbro

Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors

Journal of Applied Physics, 116(16).

By: A. Goswami, R. Trew & G. Bilbro

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

A compact physical AlGaN/GaN HFET model

IEEE Transactions on Electron Devices, 60(2), 639–645.

By: D. Hou, G. Bilbro & R. Trew

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs

Solid-State Electronics, 80, 23–27.

By: A. Goswami, R. Trew & G. Bilbro

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Toward stimulated interaction of surface phonon polaritons

Journal of Applied Physics, 114(23).

By: B. Kong, R. Trew & K. Kim

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

A Simplified physical model of RF channel breakdown in AlGaN/GaN HFETs

IEEE Transactions on Electron Devices, 59(11), 2973–2978.

By: R. Schimizzi, R. Trew & G. Bilbro

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design

2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS).

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

Research funding and the proceedings of the IEEE centennial

Proceedings of the IEEE, 100, 1273–1277.

By: R. Trew

Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

Large-signal analysis of terahertz generation in submicrometer gan diodes

IEEE Sensors Journal, 10(3), 765–771.

By: E. Barry, V. Sokolov, K. Kim & R. Trew

Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

Quasi-coherent thermal emission in the terahertz by doped semiconductors

IEEE Sensors Journal, 10(3), 443–450.

By: B. Kong, V. Sokolov, K. Kim & R. Trew

Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

Special issue on enhancement algorithms, methodologies and technology for spectral sensing

IEEE Sensors Journal, 10(3), 373–378.

By: J. Jensen, R. Trew, D. Woolard, N. Gupta, J. Theriault, M. Hayat, Y. Li, P. Gillespie

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

AlGaN/GaN HFET reliability

IEEE Microwave Magazine, 10(4), 116–127.

By: R. Trew, D. Green & J. Shealy

Source: NC State University Libraries
Added: August 6, 2018

2009 conference paper

Predicting the performance of a power amplifier using large-signal circuit simulations of an AlGaN/GaN HFET model

Gallium nitride materials and devices iv, 7216.

By: G. Bilbro, D. Hou, H. Yin & R. Trew

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Terahertz generation in GaN diodes operating in pulsed regime limited by self-heating

Applied Physics Letters, 94(22).

By: E. Barry, V. Sokolov, K. Kim & R. Trew

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Nanosensors for defense and security

IEEE Sensors Journal, 8(5-6), 641–646.

By: D. Woolard, R. Trew, D. Polla, M. Stroscio, U. Varshney, J. Jensen, J. Jensen, P. Lugli, M. Aono

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Terahertz emission mediated by surface plasmon polaritons in doped semiconductors with surface grating

Journal of Applied Physics, 103(5).

By: B. Kong, V. Sokolov, K. Kim & R. Trew

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Terahertz generation in GaN diodes in the limited space-charge accumulation mode

Journal of Applied Physics, 103(12).

By: E. Barry, V. Sokolov, K. Kim & R. Trew

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Quasimonochromatic emission spectra in the near field by polar semiconductor thermal sources

Applied Physics Letters, 90(11).

By: V. Sokolov, B. Kong, K. Kim & R. Trew

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs

IEEE Transactions on Microwave Theory and Techniques, 54(5), 2061–2067.

By: R. Trew, Y. Liu, G. Bilbro, W. Kuang, R. Vetury & J. Shealy

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

RF knee walkout and source access region of unpassivated HFETs

Electronics Letters, 42(24), 1425–1427.

By: G. Bilbro & R. Trew

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

High-frequency solid-state electronic devices

IEEE Transactions on Electron Devices, 52(5), 638–649.

By: R. Trew

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Microwave AlGaN/GaN HFEVs

IEEE Microwave Magazine, 6(1), 56–66.

By: R. Trew, G. Bilbro, W. Kuang, Y. Liu & H. Yin

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Special issue on blue sky electronic technologies

Proceedings of the IEEE, 93(10), 1687–1690.

By: R. Trew & D. Woolard

Source: NC State University Libraries
Added: August 6, 2018

1993 patent

Method of making high current, high voltage breakdown field effect transistor

Washington, DC: U.S. Patent and Trademark Office.

By: U. Mishra & R. Trew

Source: NC State University Libraries
Added: August 6, 2018

1992 patent

High current, high voltage breakdown field effect transistor

Washington, DC: U.S. Patent and Trademark Office.

By: U. Mishra & R. Trew

Source: NC State University Libraries
Added: August 6, 2018

1991 journal article

The potential of diamond and sic electronic devices for microwave and millimeter-wave power applications

Proceedings of the IEEE, 79(5), 598–620.

By: R. Trew, J. Yan & P. Mock

Source: NC State University Libraries
Added: August 6, 2018