@article{yang_rivers_baumgartner_2021, title={Mineralizing Pulmonary Elastosis in a Cat}, volume={187}, ISSN={["1532-3129"]}, DOI={10.1016/j.jcpa.2021.06.007}, abstractNote={Mineralizing pulmonary elastosis (MPE) is a rare and unique phenomenon that has been reported in humans, typically secondary to recurrent pulmonary haemorrhage. MPE has a complex histopathological appearance, often containing iron-calcium deposits that can be mistaken as fungal organisms or other inorganic material. This report documents the first case of MPE in an animal species. A 10-year-old female domestic cat with respiratory failure was submitted for necropsy. The lungs were consolidated with severe pulmonary haemosiderosis, and widely disseminated granulomas surrounded large aggregates of hyphae-like structures. The pulmonary vasculature and airway smooth muscle were partially mineralized and fragmented. Histochemical stains revealed that the fungus-like material stained strongly with Prussian blue and alizarin red but only sparingly with von Kossa and negative with Gomori's methenamine silver stain. These findings are similar to those of MPE in humans. As most veterinary pathologists may not be familiar with MPE, it is important to avoid possible misinterpretation by recognizing its distinct features and the ancillary testing that may be required.}, journal={JOURNAL OF COMPARATIVE PATHOLOGY}, author={Yang, Tzushan S. and Rivers, Orion S. and Baumgartner, Wes A.}, year={2021}, month={Aug}, pages={11–16} }
 @article{yang_nori_mal_narayan_2011, title={Control of room-temperature defect-mediated ferromagnetism in VO2 films}, volume={59}, ISSN={["1359-6454"]}, DOI={10.1016/j.actamat.2011.06.047}, abstractNote={We report interesting ferromagnetic properties and their control in a vanadium-based oxide system driven by stoichiometric defects. Vanadium oxide (VO2) thin films were grown on c-plane sapphire substrates by a pulsed laser deposition technique under different ambient conditions. The ferromagnetism of the epitaxial VO2 films can be switched on and off by altering the cooling ambient parameters. In addition, the saturated magnetic moments and coercivity of the VO2 films were found to be a function of the oxygen partial pressure during the growth process. The room-temperature ferromagnetic properties of VO2 films were correlated with the nature of the microstructure and the growth parameters. The origin of the induced magnetic properties are qualitatively understood to stem from intrinsic structural and stoichiometric defects.}, number={16}, journal={ACTA MATERIALIA}, author={Yang, Tsung-Han and Nori, Sudhakar and Mal, Siddhartha and Narayan, Jagdish}, year={2011}, month={Sep}, pages={6362–6368} }
 @article{mal_yang_gupta_prater_narayan_2011, title={Thin film epitaxy and magnetic properties of STO/TiN buffered ZnO on Si(001) substrates}, volume={59}, ISSN={["1873-2453"]}, DOI={10.1016/j.actamat.2010.12.058}, abstractNote={Abstract We report integration of epitaxial ZnO films with Si(0 0 1) substrates using STO/TiN buffer layers. It has been demonstrated that the preferential orientation of the a-plane ( 1 1 2 ¯ 0 ) and c-plane (0 0 0 2) of ZnO can be controlled via deposition temperature and oxygen partial pressure. At lower substrate temperatures ZnO grows solely in the (0 0 0 2) orientation, while the ( 1 1 2 ¯ 0 ) orientation was dominant at high substrate temperatures and low oxygen pressures. At higher pressures, the (0 0 0 2) orientation is preferred, while ( 1 1 2 ¯ 0 ) becomes weaker and a ( 1 0 1 ¯ 2 ) ZnO appears. Epitaxial relationships have been determined from X-ray diffraction φ-scans and it was found that both c- and a-ZnO had two types of orientations due to the cubic symmetry of the STO buffer layer. The orientation relationship of c-ZnO on STO(0 0 1) was ZnO(0 0 0 1) ∥ STO(1 0 0); ZnO[ 1 1 2 ¯ 0 ] ∥ STO[1 1 0] and ZnO[ 1 ¯ 2 1 ¯ 0 ] ∥ STO[ 1 ¯ 1 0 ], while that of a-ZnO on STO(0 0 1) was ZnO( 1 1 2 ¯ 0 ) ∥ STO(1 0 0); ZnO[ 1 1 2 ¯ 0 ] ∥ STO[1 1 0] and ZnO[0 0 0 2] ∥ STO[ 1 ¯ 1 0 ]. High-resolution transmission electron microscopy studies revealed atomically sharp interfaces with no reaction at the interface. Reversible d0 ferromagnetism was found to be present in both ZnO and STO layers. Our electron-energy-loss spectroscopy studies conclusively rule out the presence of any external ferromagnetic ions or impurities. Taken together, our data indicate that the ferromagnetic order in these undoped oxides might be defect mediated.}, number={6}, journal={ACTA MATERIALIA}, author={Mal, Siddhartha and Yang, Tsung-Han and Gupta, P. and Prater, J. T. and Narayan, J.}, year={2011}, month={Apr}, pages={2526–2534} }
 @article{yang_jin_aggarwal_narayan_narayan_2010, title={On growth of epitaxial vanadium oxide thin film on sapphire (0001)}, volume={25}, ISSN={["2044-5326"]}, DOI={10.1557/jmr.2010.0059}, abstractNote={We report the characteristics of epitaxial growth and properties of vanadium oxide (VO2) thin films on sapphire (0001) substrates. Pulsed laser deposition was used to grow (002) oriented VO2 films on sapphire (0001). Transmission electron microscopy studies showed that the orientation relationship between the substrate and the thin film is: (002)f2∥(0006)sub3 and [010]f2 ∥sub. It was also established that VO2 has three different orientations in the film plane which are rotated by 60° from each other. The epitaxial growth of vanadium oxide on sapphire (0001) has been explained in the framework of domain matching epitaxy (DME). Electrical resistivity measurements as a function of temperature showed a sharp transition with a hysteresis width ˜5 °C, and large resistance change (˜1.5 × 104) from the semiconductor phase to the metal phase. It is interesting to note that in spite of large angle twin boundaries in these VO2 films, the SMT characteristics are better than those observed for polycrystalline films. The higher width of thermal hysteresis for the VO2 film on c-sapphire compared to a bulk single VO2 crystal and a single-crystal VO2 film on r-sapphire can be attributed to the existence of these large-angle twin grain boundaries. These findings can provide insight into the phase transformation characteristics of VO2, which has important applications in switching and memory devices.}, number={3}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Yang, Tsung-Han and Jin, Chunming and Aggarwal, Ravi and Narayan, R. J. and Narayan, Jay}, year={2010}, month={Mar}, pages={422–426} }
 @article{yang_nori_zhou_narayan_2009, title={Defect-mediated room temperature ferromagnetism in vanadium dioxide thin films}, volume={95}, number={10}, journal={Applied Physics Letters}, author={Yang, T. H. and Nori, S. and Zhou, H. H. and Narayan, J.}, year={2009} }
 @article{yang_huang_wu_chen_gan_yeh_narayan_2009, title={Effect of annealing on atomic ordering of amorphous ZrTaTiNbSi alloy}, volume={95}, number={24}, journal={Applied Physics Letters}, author={Yang, T. H. and Huang, R. T. and Wu, C. A. and Chen, F. R. and Gan, J. Y. and Yeh, J. W. and Narayan, J.}, year={2009} }