@inproceedings{baliga_hazra_singh_roy_bhattacharya_paulakonis_notani_2013, title={Device characterization and performance of 1200V/45A SiC JFET module}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84891141152&partnerID=MN8TOARS}, DOI={10.1109/ecce.2013.6646711}, abstractNote={This paper evaluates the hard-switching performance of a novel cascode configuration of a 1200V/45A SiC JFET module. The device is first characterized and then switched up to 600V through double pulse testing. The capacitive effects of the device are analyzed and account for a significant current spike during turn-on. The switching behavior due to the gate drive circuitintroduction of varied gate resistances is discussed and analyzed. The switching behavior allows for the extraction of rise time, fall time, dV/dt, di/dt, and the switching losses - Eon and Eoff - while applying these varying gate resistances. The gate drive circuit is discussed and the hardware and test setup are shown and presented.}, booktitle={2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013}, author={Baliga, V. and Hazra, S. and Singh, S. and Roy, S. and Bhattacharya, Subhashish and Paulakonis, J. and Notani, S.}, year={2013}, pages={273–278} }
 @inproceedings{kadavelugu_baliga_bhattacharya_das_agarwal_2011, title={Zero voltage switching performance of 1200V SiC MOSFET, 1200V silicon IGBT and 900V CoolMOS MOSFET}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-81855177139&partnerID=MN8TOARS}, DOI={10.1109/ecce.2011.6064006}, abstractNote={This paper evaluates zero voltage switching (ZVS) performance of 1200 V SiC MOSFET with respect to 1200 V silicon IGBTs (PT and FST) and 900 V CoolMOS MOSFET. The converter topology chosen for the study is a dual active bridge (DAB) dc-dc converter. Typically, in a high power DAB converter, ZVS is achieved through LC resonance of leakage inductance of the high frequency transformer and external capacitance across the drain and source (or collector and emitter for IGBTs) terminals. However, the SiC MOSFET offers a completely new set of parameters for ZVS when compared to its Silicon counterparts. In this paper, it is shown that a high power converter is possible with ZVS turn-on as well as low-loss turn-off using SiC MOSFETs, with out adding any external capacitance. The unique features of the SiC MOSFET that helps in achieving this are its CDS value, the variation of CDS with drain voltage, and low current turn-off time. The corresponding parameters of the silicon IGBTs and CoolMOS devices are presented to show the uniqueness of the SiC MOSFET. Simulation results corresponding to a 6 kW, 100 kHz DAB converter are presented with the SiC MOSFET as well as the silicon IGBTs and CoolMOS to provide a comparative ZVS performance.}, booktitle={IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings}, author={Kadavelugu, A. and Baliga, V. and Bhattacharya, Subhashish and Das, M. and Agarwal, A.}, year={2011}, pages={1819–1826} }