2020 journal article
Electronic transport in epitaxial 4H-SiC based Schottky diodes modified selectively by swift heavy ions
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 115.
2020 article
Epitaxial 4H-SiC based Schottky diode temperature sensors in ultra-low current range
Kumar, V., Verma, J., Maan, A. S., & Akhtar, J. (2020, December). VACUUM, Vol. 182.