Veena Misra

A Novel Monolithic MEMS Array for E-Nose Applications

IEEE SENSORS LETTERS, 8(2).

A Wearable System for Continuous Monitoring and Assessment of Speech, Gait, and Cognitive Decline for Early Diagnosis of ADRD

2023 45TH ANNUAL INTERNATIONAL CONFERENCE OF THE IEEE ENGINEERING IN MEDICINE & BIOLOGY SOCIETY, EMBC.

Healthful Connected Living: Vision and Challenges for the Case of Obesity

IEEE INTERNET COMPUTING, 27(3), 7–14.

Performance of A Monolithic E-Nose Array Integrating MEMS and ALD Processing

2023 IEEE SENSORS.

A Wearable Electrocardiography Armband Resilient Against Artifacts

IEEE SENSORS JOURNAL, 22(19), 18970–18977.

Bias Temperature Instability on SiC n- and p-MOSFETs for High Temperature CMOS Applications

2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS).

Evaluation of Environmental Enclosures for Effective Ambient Ozone Sensing in Wrist-worn Health and Exposure Trackers

2021 IEEE SENSORS.

Flexible thermoelectric generator with liquid metal interconnects and low thermal conductivity silicone filler

NPJ FLEXIBLE ELECTRONICS, 5(1).

Wearable skin vapor sensing system for continuous monitoring of various health and lifestyles

2021 IEEE SENSORS.

Engineering a Unified Dielectric Solution for AlGaN/GaN MOS-HFET Gate and Access Regions

IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(3), 881–887.

Flexible thermoelectric generators for body heat harvesting - Enhanced device performance using high thermal conductivity elastomer encapsulation on liquid metal interconnects

APPLIED ENERGY, 262.

A novel monolithic array of multiple metal oxide sensors for E-Nose applications via selective on-chip annealing of nanolayered ALD stacks

2019 IEEE SENSORS. Presented at the 2019 IEEE SENSORS.

Optimizing the energy balance to achieve autonomous self-powering for vigilant health and IoT applications

Journal of Physics: Conference Series, 1407, 012001.

Reconfigurable Sensor Systems Integrated with Artificial Intelligence and Data Harnessing to Enable Personalized Medicine

[NSF Workshop Report]. NSF Workshop Report presented at the NSF Workshop, Alexandria, VA. https://assistcenter.org/wp-content/uploads/2019/09/NSFWorkshop_Report-082119-v2.pdf

Building Blocks of a New ALD E-Nose - A First Step: N-Type and P-Type ALD Sensors

2018 IEEE SENSORS. Presented at the 2018 IEEE Sensors.

Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO₂ Gate Dielectric

Materials Science Forum, 924, 482–485.

Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(1), 539–545.

Estimation of Beat-to-Beat Interval from Wearable Photoplethysmography Sensor on Different Measurement Sites During Daily Activities

2018 IEEE SENSORS. Presented at the 2018 IEEE Sensors.

Highly Sensitive ALD SnO2 Sensors and the Role of its Thickness in Gas Sensing Capabilities

2018 IEEE SENSORS. Presented at the 2018 IEEE Sensors.

Improved Threshold Voltage Instability in 4H-SiC MOSFETs with Atomic Layer Deposited SiO₂

Materials Science Forum, 924, 498–501.

Investigation of O-3 Adsorption on Ultra-Thin ALD SnO2 by QCM

IEEE SENSORS JOURNAL, 18(9), 3590–3594.

Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs With Lanthanum Silicate by High Temperature Forming Gas Anneal

IEEE ELECTRON DEVICE LETTERS, 39(2), 244–247.

On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process

JOURNAL OF ELECTRONIC MATERIALS, 47(2), 994–997.

Optimization of ALD high-k gate dielectric to improve AlGaN/GaN MOS-HFET DC characteristics and reliability

2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), 39–43.

Prototype to Patient Treatment: Dialogue on Safety, Regulation, Privacy, Security, and Acceptability for Wearable Medical Devices — A Workshop Report

(National Science Foundation Grant Report No. 1160483).

Room temperature ozone and humidity response evolution of atomic layer deposited SnO<inf>2</inf> sensors

2017 IEEE SENSORS. Presented at the 2017 IEEE SENSORS.

Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal

IEEE Transactions on Electron Devices, 63(7), 2826–2830.

Low-Power Wearable Systems for Continuous Monitoring of Environment and Health for Chronic Respiratory Disease

IEEE Journal of Biomedical and Health Informatics, 20(5), 1251–1264.

Metal oxide gas sensing characterization by low frequency noise spectroscopy

2016 ieee sensors.

Mobile health: the power of wearables, sensors, and apps to transform clinical trials

SPECIAL ISSUE: ANNALS REPORTS, VOL 1375, Vol. 1375, pp. 3–18.

Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 31(3).

Room temperature sensing of VOCS by atomic layer deposition of metal oxide

2016 ieee sensors.

A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application

WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 147–149.

ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(12).

Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory

Applied Physics Letters, 106(24), 243503.

Application of AlGaN/GaN Heterostructures for Ultra-Low Power Nitrogen Dioxide Sensing

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 4(10), S3034–S3037.

Atomic Layer Deposition of SnO2 for Selective Room Temperature Low ppb Level O-3 Sensing

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 4(10), S3059–S3061.

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(2), 546–553.

Ferroelectric and magnetic properties of multiferroic BiFeO3-La0.7Sr0.3MnO3 heterostructures integrated with Si (100)

Journal of Applied Physics, 117(17), 17D908.

Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing

PROCEEDINGS OF THE IEEE, 103(4), 665–681.

High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2

IEEE ELECTRON DEVICE LETTERS, 36(4), 312–314.

Investigation of Lanthanum Silicate Conditions on 4H-SiC MOSFET Characteristics

IEEE Transactions on Electron Devices, 62(11), 3781–3785.

Self-powered wearable sensor platforms for wellness

2015 International Conference on Compilers, Architecture and Synthesis for Embedded Systems (CASES), 187–187.

Ultra-low power sensing platform for personal health and personal environmental monitoring

2015 IEEE International Electron Devices Meeting (IEDM).

Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(10).

Understanding the influence of E-a and band-offset toward the conductance modulation in Al2O3 and HfO2 synaptic RRAM

2015 73rd Annual Device Research Conference (DRC), 149–150.

A novel methodology using pulsed-IV for interface or border traps characterization on AlGaN/GaN MOSHFETs

Proceedings of the international symposium on power semiconductor, 366–369.

Device Modeling for Understanding AlGaN/GaN HEMT Gate-Lag

IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(6), 2012–2018.

Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation

IEEE ELECTRON DEVICE LETTERS, 35(1), 48–50.

Flash MOS-HFET operational stability for power converter circuits

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 875–878.

High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Vol. 778-780, pp. 557–561.

High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability

Proceedings of the international symposium on power semiconductor, 269–272.

Implications of lower zero-field activation energy of dielectric in Al2O3/HfO2 bi-layer dielectric RRAM forming process

Nonvolatile memories 3, 64(14), 41–46.

Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7).

Investigation of intermediate dielectric for dual floating gate MOSFET

2013 13th Non-Volatile Memory Technology Symposium (NVMTS).

Molecular sentinel-on-chip for SERS-based biosensing

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 15(16), 6008–6015.

Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7).

Simulation and Experimental Characterization of a Unified Memory Device with Two Floating-Gates

In VLSI-SoC: From Algorithms to Circuits and System-on-Chip Design (pp. 217–233).

Atomic Layer Deposition of SiO2 for AlGaN/GaN MOS-HFETs

IEEE ELECTRON DEVICE LETTERS, 33(9), 1240–1242.

Effects of a High-k Dielectric on the Performance of III-V Ballistic Deflection Transistors

IEEE ELECTRON DEVICE LETTERS, 33(8), 1120–1122.

Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 868–870.

Work function extraction of metal gates with alternate channel materials

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 30(2).

Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory

APPLIED PHYSICS LETTERS, 99(7).

Hybrid Top-Down and Bottom-Up Fabrication Approach for Wafer-Scale Plasmonic Nanoplatforms

SMALL, 7(6), 727–731.

Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-k PMOS Application

IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 2928–2935.

Impact of Gd dopants on current polarization and the resulting effect on spin transfer velocity in Permalloy wires

JOURNAL OF APPLIED PHYSICS, 110(3).

Investigation of the Origin of V-T/V-FB Modulation by La2O3 Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-k Layer, and Interface Properties

IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 3106–3115.

Measurements of generation-recombination effect by low-frequency phase-noise technique in AlGaN/GaN MOSHFETs

Physica Status Solidi (c), 8(5), 1539–1543.

Multivalued Logic Using a Novel Multichannel GaN MOS Structure

IEEE ELECTRON DEVICE LETTERS, 32(10), 1379–1381.

Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

Suppression of dielectric crystallization on metal by introduction of SiO2 layer for metal floating gate memory blocking oxide

APPLIED PHYSICS LETTERS, 99(22).

Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 864–867.

Encapsulation of organic solar cells with ultrathin barrier layers deposited by ozone-based atomic layer deposition

ORGANIC ELECTRONICS, 11(12), 1896–1900.

Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC

Applied Physics Letters, 96(4), 042903.

Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates

APPLIED PHYSICS LETTERS, 96(11).

Introduction to the Special Section on Electronic and Ionic Interfaces to Biomolecules and Cells

Bartic, C., Chan, M., Fromherz, P., Judy, J. W., Kan, E. C., Leburton, J.-P., … Timp, G. L. (2010, May). IEEE TRANSACTIONS ON NANOTECHNOLOGY, Vol. 9, pp. 268–268.

Low-Frequency Noise Measurements of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric

IEEE ELECTRON DEVICE LETTERS, 31(9), 1041–1043.

Methodologies for Developing Surface-Enhanced Raman Scattering (SERS) Substrates for Detection of Chemical and Biological Molecules

IEEE SENSORS JOURNAL, 10(3), 608–616.

Molecular memory devices including solid-state dielectric layers and related methods

Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics

2010 international electron devices meeting - technical digest.

Plasmonic Nanoparticles and Nanowires: Design, Fabrication and Application in Sensing

JOURNAL OF PHYSICAL CHEMISTRY C, 114(16), 7480–7488.

Platinum Nanoparticles Grown by Atomic Layer Deposition for Charge Storage Memory Applications

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(6), H589–H592.

Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures

APPLIED PHYSICS LETTERS, 96(9).

Ultimate scalability of TaN metal floating gate with incorporation of High-K blocking dielectrics for flash memory applications

2010 international electron devices meeting - technical digest.

Atomic Layer Deposition of Hafnium Dioxide on TiN and Self-Assembled Monolayer Molecular Film

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(7), H561–H566.

Erbium Silicide Formation on Si1-xCx Epitaxial Layers

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(5), H378–H383.

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

APPLIED PHYSICS LETTERS, 95(15).

Platinum Germanosilicide Contacts Formed on Strained and Relaxed Si1-xGex Layers

IEEE TRANSACTIONS ON ELECTRON DEVICES, 56(6), 1220–1227.

Schottky Barrier Height of Erbium Silicide on Si1-xCx

IEEE ELECTRON DEVICE LETTERS, 30(9), 949–951.

Sub-2 nm Size-Tunable High-Density Pt Nanoparticle Embedded Nonvolatile Memory

IEEE ELECTRON DEVICE LETTERS, 30(12), 1362–1364.

Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric

APPLIED PHYSICS LETTERS, 94(12).

Tuning of the Platinum Silicide Schottky Barrier Height on n-Type Silicon by Sulfur Segregation

IEEE ELECTRON DEVICE LETTERS, 30(4), 331–333.

Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

APPLIED PHYSICS LETTERS, 93(19).

Fabrication of large area nano-rings for MRAM application

MICROELECTRONIC ENGINEERING, 85(7), 1555–1560.

Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric

APPLIED PHYSICS LETTERS, 92(24).

Large area nanorings fabricated using an atomic layer deposition Al(2)O(3) spacer for magnetic random access memory application

NANOTECHNOLOGY, 19(26).

Modulating indium gallium zinc oxide transistor characteristics with discrete redox states of molecules embedded in the gate dielectric

APPLIED PHYSICS LETTERS, 92(22).

A molecular memory device formed by HfO2 encapsulation of redox-active molecules

APPLIED PHYSICS LETTERS, 91(17).

Characteristics of Ni/Gd FUSI for NMOS gate electrode applications

IEEE ELECTRON DEVICE LETTERS, 28(7), 555–557.

Crossbar array microelectronic electrochemical cells

Washington, DC: U.S. Patent and Trademark Office.

High temperature attachment of organic molecules to substrates

Washington, DC: U.S. Patent and Trademark Office.

Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study

JOURNAL OF APPLIED PHYSICS, 102(11).

In situ patterning of electrolyte for molecular information storage devices

Washington, DC: U.S. Patent and Trademark Office.

Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices

Washington, DC: U.S. Patent and Trademark Office.

Optoelectonic devices having arrays of quantum-dot compound semiconductor superlattices therein

Washington, DC: U.S. Patent and Trademark Office.

The effects of nickel germanosilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon

APPLIED PHYSICS LETTERS, 91(14).

Valence band tunneling model for charge transfer of redox-active molecules attached to n- and p-silicon substrates

APPLIED PHYSICS LETTERS, 90(14).

Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy

APPLIED PHYSICS LETTERS, 88(20).

Critical thickness of heavily boron-doped silicon-germanium alloys

APPLIED PHYSICS LETTERS, 89(20).

Electrical and physical analysis of MoTa alloy for gate electrode applications

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(5), G417–G419.

High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(9), F210–F214.

Hybrid silicon/molecular FETs: A study of the interaction of redox-active molecules with silicon MOSFETs

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 5(3), 258–264.

Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

IEEE ELECTRON DEVICE LETTERS, 27(4), 228–230.