Works (162)

Updated: March 2nd, 2024 02:58

2024 journal article

A Novel Monolithic MEMS Array for E-Nose Applications

IEEE Sensors Letters.

By: Y. Zhouโ€‰ n, J. Dieffenderfer n, M. Aleem n, B. Leeโ€‰* & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: ORCID
Added: February 2, 2024

2023 article

A Wearable System for Continuous Monitoring and Assessment of Speech, Gait, and Cognitive Decline for Early Diagnosis of ADRD

2023 45TH ANNUAL INTERNATIONAL CONFERENCE OF THE IEEE ENGINEERING IN MEDICINE & BIOLOGY SOCIETY, EMBC.

By: J. Dieffenderfer, A. Brewer, M. Noonan, M. Smith, E. Eichenlaub, K. Haley, A. Jacks, E. Lobatonโ€‰ ...

Sources: Web Of Science, ORCID
Added: February 26, 2024

2023 journal article

Healthful Connected Living: Vision and Challenges for the Case of Obesity

IEEE INTERNET COMPUTING, 27(3), 7โ€“14.

By: M. Singh nโ€‰, M. Chi n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Sensors; Obesity; Heart rate variability; Biomedical monitoring; Artificial intelligence; Temperature measurement; Psychology
Sources: ORCID, Web Of Science
Added: May 11, 2023

2023 article

Performance of A Monolithic E-Nose Array Integrating MEMS and ALD Processing

2023 IEEE SENSORS.

By: Y. Zhouโ€‰ n, J. Dieffenderfer n, E. Sennik n, M. Aleem n, J. Speight n, S. Vasisht n, O. Oralkan nโ€‰, B. Lee*, V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Gas Sensor; ALD; Metal Oxide; MOx; E-Nose; Monolithic Array; VOC; Nitrogen Dioxide; Carbon Monoxide; Ethanol; Mixture; MEMS; BEOL; Microheater; Dry Etching; SnO2
Sources: Web Of Science, ORCID
Added: February 12, 2024

2022 journal article

A Wearable Electrocardiography Armband Resilient Against Artifacts

IEEE SENSORS JOURNAL, 22(19), 18970โ€“18977.

By: Y. Zhou n, F. Mohaddes n, C. Lee n, S. Rao n, A. Mills nโ€‰, A. Curryโ€‰ n, B. Lee n, V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Biomedical monitoring; body sensor; electrocardiography (ECG); electrodes; electronic textiles (E-textiles); sensors; wearable sensor
Sources: Web Of Science, ORCID
Added: October 1, 2022

2022 article

Bias Temperature Instability on SiC n- and p-MOSFETs for High Temperature CMOS Applications

2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS).

By: E. Ashik n, S. Isukapatiโ€‰*, H. Zhangโ€‰*, T. Liuโ€‰*, U. Gupta*, A. Morgan*, V. Misra nโ€‰, W. Sungโ€‰* ...

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: CMOS; reliability; field-effect mobility; threshold voltage; transconductance
Sources: Web Of Science, ORCID
Added: February 27, 2023

2021 article

Evaluation of Environmental Enclosures for Effective Ambient Ozone Sensing in Wrist-worn Health and Exposure Trackers

2021 IEEE SENSORS.

By: T. Latif n, J. Dieffenderfer n, A. Tanneeru nโ€‰, B. Lee n, V. Misra nโ€‰ & A. Bozkurt n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: asthma; environmental sensing; ozone exposure; ozone sensor; wearables
Sources: Web Of Science, ORCID
Added: February 28, 2022

2021 journal article

Flexible thermoelectric generator with liquid metal interconnects and low thermal conductivity silicone filler

NPJ FLEXIBLE ELECTRONICS, 5(1).

By: V. Padmanabhan Rameshโ€‰, Y. Sargolzaeiaval n, T. Neumann n, V. Misra nโ€‰, D. Vashaee n, M. Dickey nโ€‰, M. Ozturk n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: April 5, 2021

2021 article

Wearable skin vapor sensing system for continuous monitoring of various health and lifestyles

2021 IEEE SENSORS.

By: B. Lee n, M. Lim n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: gas sensor; skin gas monitoring; VOC; wearable system; VOC from skin emission
Sources: Web Of Science, ORCID
Added: February 28, 2022

2020 journal article

Engineering a Unified Dielectric Solution for AlGaN/GaN MOS-HFET Gate and Access Regions

IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(3), 881โ€“887.

By: F. Azam n, A. Tanneeru nโ€‰, B. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: AlGaN/GaN; atomic layer deposition (ALD); current collapse; HfO2; high electron mobility transistor (HEMT); high-k; high-temperature reverse bias (HTRB); hydroxyl; interface; MOS; HFET; oxidant; reliability; traps
Sources: Web Of Science, ORCID
Added: April 14, 2020

2020 journal article

Flexible thermoelectric generators for body heat harvesting - Enhanced device performance using high thermal conductivity elastomer encapsulation on liquid metal interconnects

APPLIED ENERGY, 262.

By: Y. Sargolzaeiaval n, V. Rameshโ€‰ n, T. Neumann n, V. Misra nโ€‰, D. Vashaee n, M. Dickey nโ€‰, M. Ozturk n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Thermoelectric generators; Body heat harvesters; Flexible electronics; Thermally conductive polymers
Sources: Web Of Science, ORCID
Added: March 30, 2020

2019 conference paper

A novel monolithic array of multiple metal oxide sensors for E-Nose applications via selective on-chip annealing of nanolayered ALD stacks

2019 IEEE SENSORS. Presented at the 2019 IEEE SENSORS.

By: A. Tanneeru, F. Akbulutโ€‰*, B. Leeโ€‰ n & V. Misra nโ€‰

co-author countries: Tรผrkiye ๐Ÿ‡น๐Ÿ‡ท United States of America ๐Ÿ‡บ๐Ÿ‡ธ

Event: 2019 IEEE SENSORS

Sources: Crossref, ORCID
Added: July 7, 2020

2019 journal article

Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(1), 539โ€“545.

By: X. Yang n, B. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Atomic layer deposition (ALD); forming gas anneal (FGA) lanthanum silicate (LaSiOx); mobility; SiC; threshold voltage
Sources: Web Of Science, ORCID
Added: January 14, 2019

2019 journal article

Optimizing the energy balance to achieve autonomous self-powering for vigilant health and IoT applications

Journal of Physics: Conference Series, 1407, 012001.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Crossref, ORCID
Added: July 7, 2020

2019 report

Reconfigurable Sensor Systems Integrated with Artificial Intelligence and Data Harnessing to Enable Personalized Medicine

[NSF Workshop Report]. NSF Workshop Report presented at the NSF Workshop, Alexandria, VA. https://assistcenter.org/wp-content/uploads/2019/09/NSFWorkshop_Report-082119-v2.pdf

By: M. Daniele, E. Lobaton & V. Misra"

Event: NSF Workshop at Alexandria, VA on March 7-8, 2019

Source: NC State University Libraries
Added: November 30, 2020

2018 conference paper

Building Blocks of a New ALD E-Nose - A First Step: N-Type and P-Type ALD Sensors

2018 IEEE SENSORS. Presented at the 2018 IEEE Sensors.

By: A. Tanneeruโ€‰ n, B. Leeโ€‰ n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ

Event: 2018 IEEE Sensors

Sources: Crossref, ORCID
Added: July 7, 2020

2018 journal article

Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO2 Gate Dielectric

Materials Science Forum, 924, 482โ€“485.

By: M. Kangโ€‰ n, K. Lawless n, B. Leeโ€‰ n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Crossref, ORCID
Added: July 7, 2020

2018 conference paper

Estimation of Beat-to-Beat Interval from Wearable Photoplethysmography Sensor on Different Measurement Sites During Daily Activities

2018 IEEE SENSORS. Presented at the 2018 IEEE Sensors.

By: F. Akbulutโ€‰ n, K. Lawless n, A. Tanneeruโ€‰ n, S. Rao n, B. Leeโ€‰ n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ

Event: 2018 IEEE Sensors

Sources: Crossref, ORCID
Added: July 7, 2020

2018 conference paper

Highly Sensitive ALD SnO2 Sensors and the Role of its Thickness in Gas Sensing Capabilities

2018 IEEE SENSORS. Presented at the 2018 IEEE Sensors.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ

Event: 2018 IEEE Sensors

Sources: Crossref, ORCID
Added: July 7, 2020

2018 journal article

Improved Threshold Voltage Instability in 4H-SiC MOSFETs with Atomic Layer Deposited SiOโ‚‚

Materials Science Forum, 924, 498โ€“501.

By: M. Kangโ€‰ n, B. Leeโ€‰ n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Crossref, ORCID
Added: July 7, 2020

2018 journal article

Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs With Lanthanum Silicate by High Temperature Forming Gas Anneal

IEEE ELECTRON DEVICE LETTERS, 39(2), 244โ€“247.

By: X. Yangโ€‰ n, B. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: 4H-SiC; lanthanum silicate; forming gas anneal; electron mobility; atomic layer deposition; threshold voltage
Sources: Web Of Science, ORCID
Added: August 6, 2018

2018 journal article

Investigation of O-3 Adsorption on Ultra-Thin ALD SnO2 by QCM

IEEE SENSORS JOURNAL, 18(9), 3590โ€“3594.

By: M. Lim n, S. Mills n, B. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: ALD; O-3; ozone; QCM; quartz crystal microbalance; SnO2
Sources: Web Of Science, ORCID
Added: August 6, 2018

2018 journal article

On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process

JOURNAL OF ELECTRONIC MATERIALS, 47(2), 994โ€“997.

By: B. Sarkar n, S. Mills n, B. Lee n, W. Pitts n, V. Misra nโ€‰ & P. Franzon nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: RRAM; TiO2; synapse; neuromorphic systems; volatile memory
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 conference paper

Optimization of ALD high-k gate dielectric to improve AlGaN/GaN MOS-HFET DC characteristics and reliability

2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), 39โ€“43.

By: F. Azam n, B. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 report

Prototype to Patient Treatment: Dialogue on Safety, Regulation, Privacy, Security, and Acceptability for Wearable Medical Devices โ€” A Workshop Report

(National Science Foundation Grant Report No. 1160483).

By: R. Foley, P. Asare, J. Delborneโ€‰, J. Lach & V. Misraโ€‰

Sources: Crossref, ORCID, NC State University Libraries
Added: November 29, 2018

2017 conference paper

Room temperature ozone and humidity response evolution of atomic layer deposited SnO2 sensors

2017 IEEE SENSORS. Presented at the 2017 IEEE SENSORS.

By: S. Mills n, B. Leeโ€‰ n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ

Event: 2017 IEEE SENSORS

Sources: Crossref, ORCID
Added: July 7, 2020

2016 journal article

Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4Hโ€“SiC After Nitrous Oxide Anneal

IEEE Transactions on Electron Devices, 63(7), 2826โ€“2830.

By: X. Yang n, B. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Atomic layer deposition (ALD); charge; MOSFETs; SiC; SiO2; threshold voltage
Sources: Web Of Science, ORCID, Crossref
Added: August 6, 2018

2016 journal article

Low-Power Wearable Systems for Continuous Monitoring of Environment and Health for Chronic Respiratory Disease

IEEE Journal of Biomedical and Health Informatics, 20(5), 1251โ€“1264.

By: J. Dieffenderfer n, H. Goodell n, S. Mills n, M. McKnight n, S. Yao n, F. Lin n, E. Beppler n, B. Bentโ€‰ n ...

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Environmental and physiological sensing; wearable asthma monitoring
MeSH headings : Asthma / diagnosis; Chronic Disease; Electric Impedance; Electrocardiography; Equipment Design; Humans; Monitoring, Ambulatory / instrumentation; Monitoring, Ambulatory / methods; Photoplethysmography; Skin / physiopathology; Spirometry
Sources: Web Of Science, ORCID, Crossref
Added: August 6, 2018

2016 conference paper

Metal oxide gas sensing characterization by low frequency noise spectroscopy

2016 ieee sensors.

By: M. Lim n, A. Malhotra n, S. Mills n, J. Muth n, B. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 article

Mobile health: the power of wearables, sensors, and apps to transform clinical trials

SPECIAL ISSUE: ANNALS REPORTS, VOL 1375, Vol. 1375, pp. 3โ€“18.

By: B. Munos*, P. Baker*, B. Bot*, M. Crouthamelโ€‰*, G. Vries*, I. Ferguson*, J. Hixson*, L. Malek* ...

co-author countries: Canada ๐Ÿ‡จ๐Ÿ‡ฆ United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: biosensors; mobile technology; wireless; medical device; health care; data; clinical study
MeSH headings : Biosensing Techniques; Clinical Trials as Topic; Humans; Mobile Applications / legislation & jurisprudence; Public Health; Telemedicine / legislation & jurisprudence; Telemetry
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 31(3).

By: N. Ramanan n, B. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: heterojunctions; power transistors; semiconductor-insulator interfaces; semiconductor device reliability; high-k gate dielectrics; atomic layer deposition; AlGaN/GaN
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 conference paper

Room temperature sensing of VOCS by atomic layer deposition of metal oxide

2016 ieee sensors.

By: A. Tanneeru nโ€‰, S. Mills n, M. Lim n, M. Mahmud n, J. Dieffenderfer n, A. Bozkurt n, T. Nagleโ€‰ n, B. Lee n, V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2015 conference paper

A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application

WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 147โ€“149.

By: I. Ji n, B. Lee n, S. Wang n, V. Misra nโ€‰ & A. Huang n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2015 journal article

ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(12).

By: N. Ramanan n, B. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: power transistors; semiconductor-insulator interfaces; semiconductor device reliability; high-k gate dielectrics; atomic layer deposition (ALD); AlGaN/GaN; MOSHFET
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory

Applied Physics Letters, 106(24), 243503.

By: N. Ramanan n, B. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: NC State University Libraries, ORCID, Crossref
Added: August 6, 2018

2015 journal article

Application of AlGaN/GaN Heterostructures for Ultra-Low Power Nitrogen Dioxide Sensing

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 4(10), S3034โ€“S3037.

By: M. Lim n, S. Mills n, B. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Atomic Layer Deposition of SnO2 for Selective Room Temperature Low ppb Level O-3 Sensing

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 4(10), S3059โ€“S3061.

By: S. Mills n, M. Lim n, B. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(2), 546โ€“553.

By: N. Ramanan n, B. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Heterojunctions; millimeter wave transistors; power transistors; semiconductor device reliability; semiconductor-insulator interfaces
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Ferroelectric and magnetic properties of multiferroic BiFeO3-La0.7Sr0.3MnO3 heterostructures integrated with Si (100)

Journal of Applied Physics, 117(17), 17D908.

By: S. Singamaneniโ€‰ n, J. Prater n, S. Noriโ€‰ n, D. Kumarโ€‰*, B. Lee n, V. Misra nโ€‰, J. Narayan nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Crossref, ORCID
Added: November 21, 2020

2015 journal article

Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing

PROCEEDINGS OF THE IEEE, 103(4), 665โ€“681.

By: V. Misra nโ€‰, A. Bozkurt n, B. Calhounโ€‰*, T. Jacksonโ€‰*, J. Jur n, J. Lachโ€‰*, B. Lee n, J. Muth n ...

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Atomic layer deposition; CMUT; environmental monitoring; environmental sensor; flexible electrode; motion harvesting; physiological sensor; piezoelectric; PZT; self-powered; silver nanowire; TEG; thermoelectrics; ultra-low power; ultra-low power SOC; volatile organic compound sensor; wearable device
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2

IEEE ELECTRON DEVICE LETTERS, 36(4), 312โ€“314.

By: X. Yang n, B. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Atomic layer deposition; lanthanum silicate; mobility; SiC
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Investigation of Lanthanum Silicate Conditions on 4H-SiC MOSFET Characteristics

IEEE Transactions on Electron Devices, 62(11), 3781โ€“3785.

By: X. Yang n, B. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Atomic layer deposition (ALD); ALD SiO2; lanthanum silicate (LaSiOx); mobility; silicon carbide (SiC)
Sources: Web Of Science, ORCID, Crossref
Added: August 6, 2018

2015 conference paper

Self-powered wearable sensor platforms for wellness

2015 International Conference on Compilers, Architecture and Synthesis for Embedded Systems (CASES), 187โ€“187.

By: V. Misraโ€‰, J. Lach, A. Bozkurt, B. Calhoun, S. Datta & O. Oralkanโ€‰

Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

Ultra-low power sensing platform for personal health and personal environmental monitoring

2015 IEEE International Electron Devices Meeting (IEDM).

By: V. Misra nโ€‰, B. Lee n, P. Manickamโ€‰*, M. Lim n, S. Pasha*, S. Mills n, S. Bhansaliโ€‰*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2015 journal article

Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(10).

By: B. Sarkar*, B. Lee* & V. Misra*โ€‰

author keywords: RRAM; forming; set; reset; synapse; diffusion
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 conference paper

Understanding the influence of E-a and band-offset toward the conductance modulation in Al2O3 and HfO2 synaptic RRAM

2015 73rd Annual Device Research Conference (DRC), 149โ€“150.

By: B. Sarkar n, B. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 conference paper

A novel methodology using pulsed-IV for interface or border traps characterization on AlGaN/GaN MOSHFETs

Proceedings of the international symposium on power semiconductor, 366โ€“369.

By: N. Ramanan n, B. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 journal article

Device Modeling for Understanding AlGaN/GaN HEMT Gate-Lag

IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(6), 2012โ€“2018.

By: N. Ramanan n, B. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: AlGaN/GaN; current collapse; gate-lag; HEMT; high electron mobility transistor; passivation; reliability
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation

IEEE ELECTRON DEVICE LETTERS, 35(1), 48โ€“50.

By: B. Sarkar n, N. Ramanan n, S. Jayanti n, N. Di Spigna n, B. Lee n, P. Franzon nโ€‰, V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Flash memory; floating gate; dynamic memory; MOSFET; FN tunneling; direct tunneling
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 article

Flash MOS-HFET operational stability for power converter circuits

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 875โ€“878.

By: C. Kirkpatrick n, B. Lee n, N. Ramanan n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: MOSHFET; flash; ALD; power converter
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 article

High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Vol. 778-780, pp. 557โ€“561.

By: X. Yang n, B. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: 4H-SiC; ALD; La2O3; MOS; Mobility
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 conference paper

High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability

Proceedings of the international symposium on power semiconductor, 269โ€“272.

By: I. Ji n, B. Lee n, S. Wang n, V. Misra nโ€‰, A. Huang n & Y. Choi*

co-author countries: Korea (Republic of) ๐Ÿ‡ฐ๐Ÿ‡ท United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 conference paper

Implications of lower zero-field activation energy of dielectric in Al2O3/HfO2 bi-layer dielectric RRAM forming process

Nonvolatile memories 3, 64(14), 41โ€“46.

By: B. Sarkar, B. Lee & V. Misraโ€‰

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7).

By: B. Lee*, Y. Choi*, C. Kirkpatrick*, A. Huang* & V. Misra*โ€‰

Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 conference paper

Investigation of intermediate dielectric for dual floating gate MOSFET

2013 13th Non-Volatile Memory Technology Symposium (NVMTS).

By: B. Sarkar n, S. Jayanti n, N. Spigna n, B. Lee n, V. Misra nโ€‰ & P. Franzon nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2013 journal article

Molecular sentinel-on-chip for SERS-based biosensing

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 15(16), 6008โ€“6015.

By: H. Wang*, A. Dhawanโ€‰*, Y. Du n, D. Batchelor n, D. Leonard*, V. Misra nโ€‰, T. Vo-Dinhโ€‰*

co-author countries: India ๐Ÿ‡ฎ๐Ÿ‡ณ United States of America ๐Ÿ‡บ๐Ÿ‡ธ
MeSH headings : Biomarkers / analysis; Biosensing Techniques; Breast Neoplasms / diagnosis; Breast Neoplasms / metabolism; DNA / analysis; Female; Humans; Ki-67 Antigen / genetics; Nanowires / chemistry; Oligonucleotide Array Sequence Analysis; Oligonucleotide Probes / chemistry; Oligonucleotide Probes / metabolism; Silicon / chemistry; Spectrum Analysis, Raman
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7).

By: N. Ramanan n, B. Lee n, C. Kirkpatrick n, R. Suri n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 chapter

Simulation and Experimental Characterization of a Unified Memory Device with Two Floating-Gates

In VLSI-SoC: From Algorithms to Circuits and System-on-Chip Design (pp. 217โ€“233).

By: N. Di Spigna n, D. Schinke n, S. Jayanti n, V. Misra nโ€‰ & P. Franzon nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Crossref, ORCID
Added: September 6, 2020

2012 journal article

Atomic Layer Deposition of SiO2 for AlGaN/GaN MOS-HFETs

IEEE ELECTRON DEVICE LETTERS, 33(9), 1240โ€“1242.

By: C. Kirkpatrick n, B. Lee n, R. Suri n, X. Yang n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Atomic layer deposition (ALD); GaN; heterostructure field-effect transistor (HFET); metal-oxide-semiconductor heterojunction field-effect transistor (MOS-HFET); SiO2
Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 journal article

Effects of a High-k Dielectric on the Performance of III-V Ballistic Deflection Transistors

IEEE ELECTRON DEVICE LETTERS, 33(8), 1120โ€“1122.

co-author countries: Spain ๐Ÿ‡ช๐Ÿ‡ธ United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: High-k dielectric; III-V semiconductors; nanodevices
Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 article

Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 868โ€“870.

By: B. Lee n, C. Kirkpatrick n, Y. Choi n, X. Yang n, A. Huang n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: enhancement mode; GaN-MOSHFET; normally-off; atomic layer deposition
Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 article

Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 864โ€“867.

By: C. Kirkpatrick n, B. Lee n, Y. Choi n, A. Huang n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: GaN; MOS-HFET; ALD; enhancement mode
Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 journal article

Work function extraction of metal gates with alternate channel materials

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 30(2).

By: M. Coan*, D. Johnson*, J. Woo*, N. Biswas n, V. Misra nโ€‰, P. Majhi, H. Harris*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory

APPLIED PHYSICS LETTERS, 99(7).

By: R. Jeff*, M. Yunโ€‰*, B. Ramalingam*, B. Lee n, V. Misra nโ€‰, G. Triplettโ€‰*, S. Gangopadhyay*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Hybrid Top-Down and Bottom-Up Fabrication Approach for Wafer-Scale Plasmonic Nanoplatforms

SMALL, 7(6), 727โ€“731.

By: A. Dhawan*, Y. Du n, D. Batchelor n, H. Wang*, D. Leonard*, V. Misra nโ€‰, M. Ozturk n, M. Gerhold*, T. Vo-Dinhโ€‰*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
MeSH headings : Nanotechnology / methods; Nanowires
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-k PMOS Application

IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 2928โ€“2935.

By: B. Lee n, D. Lichtenwalner n, S. Novak n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Advanced gate stack; high-k dielectrics; V-T control; work-function modulation
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Impact of Gd dopants on current polarization and the resulting effect on spin transfer velocity in Permalloy wires

JOURNAL OF APPLIED PHYSICS, 110(3).

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Investigation of the Origin of V-T/V-FB Modulation by La2O3 Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-k Layer, and Interface Properties

IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 3106โ€“3115.

By: B. Lee n, S. Novak n, D. Lichtenwalner n, X. Yang n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Advanced gate stack; high-k dielectrics; V-T control; work-function modulation
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Measurements of generation-recombination effect by low-frequency phase-noise technique in AlGaN/GaN MOSHFETs

Physica Status Solidi (c), 8(5), 1539โ€“1543.

By: C. Kayis*, J. Leachโ€‰*, C. Zhu*, M. Wuโ€‰*, X. Li*, รœ. ร–zgรผr*, H. Morkoรง*, X. Yangโ€‰ n, V. Misra nโ€‰, P. Handel*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: low-frequency noise; GaN MOSHFET; generation-recombination; gate dielectric
Sources: Crossref, ORCID
Added: September 6, 2020

2011 journal article

Multivalued Logic Using a Novel Multichannel GaN MOS Structure

IEEE ELECTRON DEVICE LETTERS, 32(10), 1379โ€“1381.

By: N. Ramanan n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Gallium nitride; heterostructure; MOS device; multichannel; multivalued logic (MVL); quaternary logic
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 article

Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

By: C. Kirkpatrick n, B. Lee n, X. Yang n, V. Misra nโ€‰, C. Wetzel & A. Khan

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: GaN; HFET; MOS-HFET; ALD
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Suppression of dielectric crystallization on metal by introduction of SiO2 layer for metal floating gate memory blocking oxide

APPLIED PHYSICS LETTERS, 99(22).

By: S. Jayanti n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: aluminium compounds; amorphous state; crystallisation; flash memories; hafnium compounds; high-k dielectric thin films; MIM structures; permittivity; silicon compounds; thermal stability; X-ray diffraction
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 journal article

Encapsulation of organic solar cells with ultrathin barrier layers deposited by ozone-based atomic layer deposition

ORGANIC ELECTRONICS, 11(12), 1896โ€“1900.

By: S. Sarkar n, J. Culp n, J. Whyland n, M. Garvan n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Organic solar cell; Encapsulation; Atomic layer deposition; Ozone
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 journal article

Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4Hโ€“SiC

Applied Physics Letters, 96(4), 042903.

By: R. Suri n, C. Kirkpatrick n, D. Lichtenwalnerโ€‰ n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: alumina; atomic layer deposition; conduction bands; electric breakdown; energy gap; hafnium compounds; high-k dielectric thin films; permittivity; semiconductor-insulator boundaries; valence bands; X-ray photoelectron spectra
Sources: Crossref, ORCID
Added: September 6, 2020

2010 journal article

Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates

APPLIED PHYSICS LETTERS, 96(11).

By: R. Suri n, D. Lichtenwalner n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: annealing; atomic layer deposition; gallium arsenide; high-k dielectric thin films; III-V semiconductors; interface phenomena; surface cleaning; X-ray photoelectron spectra
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 article

Introduction to the Special Section on Electronic and Ionic Interfaces to Biomolecules and Cells

Bartic, C., Chan, M., Fromherz, P., Judy, J. W., Kan, E. C., Leburton, J.-P., โ€ฆ Timp, G. L. (2010, May). IEEE TRANSACTIONS ON NANOTECHNOLOGY, Vol. 9, pp. 268โ€“268.

By: C. Barticโ€‰*, M. Chanโ€‰*, P. Fromherz*, J. Judy*, E. Kanโ€‰*, J. Leburtonโ€‰*, J. Liโ€‰*, V. Misra nโ€‰, M. Reedโ€‰*, G. Timp*

co-author countries: Belgium ๐Ÿ‡ง๐Ÿ‡ช China ๐Ÿ‡จ๐Ÿ‡ณ Germany ๐Ÿ‡ฉ๐Ÿ‡ช Hong Kong ๐Ÿ‡ญ๐Ÿ‡ฐ United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 journal article

Low-Frequency Noise Measurements of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric

IEEE ELECTRON DEVICE LETTERS, 31(9), 1041โ€“1043.

By: C. Kayis*, J. Leachโ€‰*, C. Zhu*, M. Wuโ€‰*, X. Li*, U. Oezguer, H. Morkoc*, X. Yang n, V. Misra nโ€‰, P. Handel*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Gate dielectric; generation-recombination (G-R); metal-oxide-semiconductor heterostructure field-effect transistor (MOS-HFET); noise measurement
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 journal article

Methodologies for Developing Surface-Enhanced Raman Scattering (SERS) Substrates for Detection of Chemical and Biological Molecules

IEEE SENSORS JOURNAL, 10(3), 608โ€“616.

By: A. Dhawanโ€‰*, Y. Du n, F. Yanโ€‰*, M. Gerhold*, V. Misra nโ€‰ & T. Vo-Dinhโ€‰*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Annealing; focused ion beam; nanoislands; nanopillars; nanowires; surface-enhanced Raman scattering (SERS); surface plasmons
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 patent

Molecular memory devices including solid-state dielectric layers and related methods

By: V. Misraโ€‰, R. Shrivastava, Z. Chen & G. Mathur

Source: NC State University Libraries
Added: August 6, 2018

2010 conference paper

Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics

2010 international electron devices meeting - technical digest.

By: B. Lee n, C. Kirkpatrick n, X. Yangโ€‰ n, S. Jayanti n, R. Suri n, J. Roberts n, V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2010 journal article

Plasmonic Nanoparticles and Nanowires: Design, Fabrication and Application in Sensing

JOURNAL OF PHYSICAL CHEMISTRY C, 114(16), 7480โ€“7488.

By: T. Vo-Dinhโ€‰ n, A. Dhawan n, S. Nortonโ€‰ n, C. Khoury n, H. Wang n, V. Misra nโ€‰, M. Gerhold n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 journal article

Platinum Nanoparticles Grown by Atomic Layer Deposition for Charge Storage Memory Applications

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(6), H589โ€“H592.

By: S. Novak n, B. Lee n, X. Yang n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 journal article

Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures

APPLIED PHYSICS LETTERS, 96(9).

By: S. Jayanti n, X. Yang n, D. Lichtenwalner n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: aluminium compounds; dielectric materials; flash memories; lanthanum compounds; silicon compounds; transmission electron microscopy
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 conference paper

Ultimate scalability of TaN metal floating gate with incorporation of High-K blocking dielectrics for flash memory applications

2010 international electron devices meeting - technical digest.

By: S. Jayanti n, X. Yang n, R. Suri n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2009 journal article

Atomic Layer Deposition of Hafnium Dioxide on TiN and Self-Assembled Monolayer Molecular Film

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(7), H561โ€“H566.

By: Z. Chen n, S. Sarkar n, N. Biswas n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2009 journal article

Erbium Silicide Formation on Si1-xCx Epitaxial Layers

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(5), H378โ€“H383.

By: E. Alptekin n, M. Ozturk n, V. Misra nโ€‰, Y. Cho*, Y. Kim* & S. Chopra*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2009 journal article

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

APPLIED PHYSICS LETTERS, 95(15).

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2009 journal article

Platinum Germanosilicide Contacts Formed on Strained and Relaxed Si1-xGex Layers

IEEE TRANSACTIONS ON ELECTRON DEVICES, 56(6), 1220โ€“1227.

By: E. Alptekin n, C. Kirkpatrick n, V. Misra nโ€‰ & M. Ozturk n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Platinum germanide; platinum germanosilicide; platinum silicide; PtGe; PtSiGe; Schottky barrier height; SiGe
Sources: Web Of Science, ORCID
Added: August 6, 2018

2009 journal article

Schottky Barrier Height of Erbium Silicide on Si1-xCx

IEEE ELECTRON DEVICE LETTERS, 30(9), 949โ€“951.

By: E. Alptekin n, M. Ozturk n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Erbium; Schottky barrier; Si:C; Si1-xCx silicide
Sources: Web Of Science, ORCID
Added: August 6, 2018

2009 journal article

Sub-2 nm Size-Tunable High-Density Pt Nanoparticle Embedded Nonvolatile Memory

IEEE ELECTRON DEVICE LETTERS, 30(12), 1362โ€“1364.

By: M. Yunโ€‰*, D. Mueller*, M. Hossainโ€‰*, V. Misra nโ€‰ & S. Gangopadhyay*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Nanoparticle (NP); nonvolatile memory (NVM); size-tunable platinum
Sources: Web Of Science, ORCID
Added: August 6, 2018

2009 journal article

Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric

APPLIED PHYSICS LETTERS, 94(12).

By: A. Suresh n, S. Novak n, P. Wellenius n, V. Misra nโ€‰ & J. Muth n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: electron traps; gallium compounds; indium compounds; platinum; random-access storage; semiconductor materials; semiconductor thin films; thin film transistors
Sources: Web Of Science, ORCID
Added: August 6, 2018

2009 journal article

Tuning of the Platinum Silicide Schottky Barrier Height on n-Type Silicon by Sulfur Segregation

IEEE ELECTRON DEVICE LETTERS, 30(4), 331โ€“333.

By: E. Alptekin n, M. Ozturk n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Contact resistance; platinum; Schottky barriers; sulfur
Sources: Web Of Science, ORCID
Added: August 6, 2018

2008 journal article

Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

APPLIED PHYSICS LETTERS, 93(19).

By: R. Suri n, B. Lee n, D. Lichtenwalnerโ€‰ n, N. Biswas n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: annealing; atomic layer deposition; capacitance; dielectric thin films; gallium arsenide; hafnium compounds; III-V semiconductors; MOS capacitors; passivation; semiconductor-insulator boundaries; X-ray photoelectron spectra
Sources: Web Of Science, ORCID
Added: August 6, 2018

2008 journal article

Fabrication of large area nano-rings for MRAM application

MICROELECTRONIC ENGINEERING, 85(7), 1555โ€“1560.

By: Y. Luo* & V. Misra*โ€‰

author keywords: magnetic ring; lateral etch; de-centered ring
Sources: Web Of Science, ORCID
Added: August 6, 2018

2008 journal article

Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric

APPLIED PHYSICS LETTERS, 92(24).

By: R. Suri n, D. Lichtenwalner n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2008 journal article

Large area nanorings fabricated using an atomic layer deposition Al(2)O(3) spacer for magnetic random access memory application

NANOTECHNOLOGY, 19(26).

By: Y. Luo*, Y. Du* & V. Misra*โ€‰

Sources: Web Of Science, ORCID
Added: August 6, 2018

2008 journal article

Modulating indium gallium zinc oxide transistor characteristics with discrete redox states of molecules embedded in the gate dielectric

APPLIED PHYSICS LETTERS, 92(22).

By: S. Sarkar n, A. Suresh n, F. Myersโ€‰ n, J. Muth n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2007 journal article

A molecular memory device formed by HfO2 encapsulation of redox-active molecules

APPLIED PHYSICS LETTERS, 91(17).

By: Z. Chen n, B. Lee n, S. Sarkar n, S. Gowda n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2007 journal article

Characteristics of Ni/Gd FUSI for NMOS gate electrode applications

IEEE ELECTRON DEVICE LETTERS, 28(7), 555โ€“557.

By: B. Lee n, N. Biswas n, S. Novak n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: band edge work function; fully silicided (FUSI) gate; metal gate electrodes; n-MOSFET; nickel/gadolinium (Ni/Gd); Ni-FUSI; work function extraction
Sources: Web Of Science, ORCID
Added: August 6, 2018

2007 patent

Crossbar array microelectronic electrochemical cells

Washington, DC: U.S. Patent and Trademark Office.

By: V. Misraโ€‰ & J. Damiano

Source: NC State University Libraries
Added: August 6, 2018

2007 patent

High temperature attachment of organic molecules to substrates

Washington, DC: U.S. Patent and Trademark Office.

By: D. Bocian, J. Lindseyโ€‰, Z. Liu, A. Yesseri, V. Misraโ€‰, Q. Zhao, Q. Li, S. Surthi, R. Loewe

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study

JOURNAL OF APPLIED PHYSICS, 102(11).

By: K. Maitra n, M. Frankโ€‰*, V. Narayananโ€‰*, V. Misra nโ€‰ & E. Cartier*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2007 patent

In situ patterning of electrolyte for molecular information storage devices

Washington, DC: U.S. Patent and Trademark Office.

By: V. Misraโ€‰, D. Bocian, W. Kuhr & J. Lindseyโ€‰

Source: NC State University Libraries
Added: August 6, 2018

2007 patent

Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk, V. Misraโ€‰ & S. Chopra

Source: NC State University Libraries
Added: August 6, 2018

2007 patent

Optoelectonic devices having arrays of quantum-dot compound semiconductor superlattices therein

Washington, DC: U.S. Patent and Trademark Office.

By: Z. Zhang, V. Misraโ€‰, S. Bedair & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

The effects of nickel germanosilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon

APPLIED PHYSICS LETTERS, 91(14).

By: S. Chopra n, M. Ozturk n, V. Misra nโ€‰, Z. Ren* & L. McNeilโ€‰*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2007 journal article

Valence band tunneling model for charge transfer of redox-active molecules attached to n- and p-silicon substrates

APPLIED PHYSICS LETTERS, 90(14).

By: S. Gowda n, G. Mathur n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy

APPLIED PHYSICS LETTERS, 88(20).

By: S. Chopra n, M. Ozturk n, V. Misra nโ€‰, K. McGuire* & L. McNeilโ€‰*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

Critical thickness of heavily boron-doped silicon-germanium alloys

APPLIED PHYSICS LETTERS, 89(20).

By: S. Chopra n, M. Ozturk n, V. Misra nโ€‰, K. McGuire* & L. McNeilโ€‰*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

Electrical and physical analysis of MoTa alloy for gate electrode applications

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(5), G417โ€“G419.

By: B. Chen n, N. Biswas n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(9), F210โ€“F214.

By: D. Lichtenwalner*, J. Jur*, R. Jha n, N. Inoue*, B. Chen n, V. Misra nโ€‰, A. Kingon*

co-author countries: Australia ๐Ÿ‡ฆ๐Ÿ‡บ United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

Hybrid silicon/molecular FETs: A study of the interaction of redox-active molecules with silicon MOSFETs

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 5(3), 258โ€“264.

By: S. Gowda n, G. Mathur n, Q. Li n, S. Surthi n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: charge storage molecules; hybrid silicon/molecular devices; molecular electronics; monolayer; MOSFETs; redox-active molecules
Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

IEEE ELECTRON DEVICE LETTERS, 27(4), 228โ€“230.

By: B. Chen n, R. Jha n, H. Lazar n, N. Biswas n, J. Lee n, B. Lee n, L. Wielunski*, E. Garfunkel*, V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: alloy; capping; effective work function; metal gate; MoTa; oxygen diffusion
Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

Large-area long-range ordered anisotropic magnetic nanostructure fabrication by photolithography

NANOTECHNOLOGY, 17(19), 4909โ€“4911.

By: Y. Luo* & V. Misra*โ€‰

Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

Work function tuning via interface dipole by ultrathin reaction layers using AlTa and AlTaN alloys

IEEE ELECTRON DEVICE LETTERS, 27(9), 731โ€“733.

By: B. Chen n, R. Jha n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: AlTa; AlTaN; dipole; effective work function; metal gate
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 journal article

Approach for investigating lateral conduction in self-assembled monolayers

APPLIED PHYSICS LETTERS, 87(26).

By: S. Gowda n, G. Mathur n, Q. Li n, S. Surthi n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 journal article

Electrical characteristics of HfO2 dielectrics with Ru metal gate electrodes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 152(9), F138โ€“F141.

By: Y. Suh n, H. Lazar n, B. Chenโ€‰ n, J. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 journal article

Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application

APPLIED PHYSICS LETTERS, 86(2).

By: N. Biswas n, J. Gurganus n, V. Misra nโ€‰, Y. Yangโ€‰* & S. Stemmerโ€‰*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 patent

High/low work function metal alloys for integrated circuit electrodes

Washington, DC: U.S. Patent and Trademark Office.

By: V. Misraโ€‰, H. Zhong & S. Hong

Source: NC State University Libraries
Added: August 6, 2018

2005 patent

Hybrid molecular memory devices and methods of use thereof

Washington, DC: U.S. Patent and Trademark Office.

By: V. Misraโ€‰, S. Gowda & G. Mathur

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Impact of Ge on integration of HfO2 and metal gate electrodes on strained Si channels

APPLIED PHYSICS LETTERS, 87(7).

By: Y. Lin n, M. Ozturk n, B. Chen n, S. Rhee*, J. Leeโ€‰* & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 journal article

Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applications

APPLIED PHYSICS LETTERS, 87(22).

By: R. Jha n, J. Leeโ€‰ n, P. Majhi & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 patent

Methods of fabricating crossbar array microelectronic electrochemical cells

Washington, DC: U.S. Patent and Trademark Office.

John Damiano; Veena Misra

Source: NC State University Libraries
Added: August 6, 2018

2005 patent

Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein

Washington, DC: U.S. Patent and Trademark Office.

By: Z. Zhang, V. Misraโ€‰, S. Bedair & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Physical and electrical analysis of RuxYy alloys for gate electrode applications

APPLIED PHYSICS LETTERS, 86(5).

By: B. Chen n, Y. Suh n, J. Lee n, J. Gurganus n, V. Misra nโ€‰ & C. Cabral*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 journal article

Properties of Ta-Mo alloy gate electrode for n-MOSFET

JOURNAL OF MATERIALS SCIENCE, 40(9-10), 2693โ€“2695.

By: C. Lee*, J. Kim*, S. Hong*, H. Zhong*, B. Chen n & V. Misra nโ€‰

co-author countries: Korea (Republic of) ๐Ÿ‡ฐ๐Ÿ‡ท United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 journal article

Properties of functionalized redox-active monolayers on thin silicon dioxide - A study of the. dependence of retention time on oxide thickness

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 4(2), 278โ€“283.

By: G. Mathur n, S. Gowda n, Q. Li n, S. Surthi n, Q. Zhao n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: charge retention; molecular memories; monolayer; redox-active molecules
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 journal article

Redox-active monolayers on nano-scale silicon electrodes

NANOTECHNOLOGY, 16(2), 257โ€“261.

By: Q. Zhao n, Y. Luoโ€‰ n, S. Surthi n, Q. Li n, G. Mathur n, S. Gowda n, P. Larson*, M. Johnsonโ€‰*, V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 journal article

Synthesis and Film-Forming Properties of Ethynylporphyrins

Chemistry of Materials, 17(14), 3728โ€“3742.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Crossref, ORCID, Web Of Science
Added: August 6, 2018

2005 journal article

Work function tuning of nickel silicide by co-sputtering nickel and silicon

APPLIED PHYSICS LETTERS, 87(17).

By: N. Biswas n, J. Gurganus n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 journal article

A capacitance-based methodology for work function extraction of metals on high-kappa

IEEE ELECTRON DEVICE LETTERS, 25(6), 420โ€“423.

By: R. Jhaโ€‰ n, J. Gurganos n, Y. Kim*, R. Choiโ€‰*, J. Lee* & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: dual-gate CMOS; Fermi-level pinning; gate electrodes; HfO2; high-kappa charges; metal gates; workfunction extraction
Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 journal article

Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 22(1), 175โ€“179.

By: Y. Suh n, G. Heuss n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 patent

Method and system for molecular charge storage field effect transistor

Washington, DC: U.S. Patent and Trademark Office.

By: V. Misraโ€‰, D. Bocian, W. Kuhr & J. Lindseyโ€‰

Source: NC State University Libraries
Added: August 6, 2018

2004 patent

Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates

Washington, DC: U.S. Patent and Trademark Office.

By: Z. Zhang, V. Misraโ€‰, S. Bedair & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Multibit memory using self-assembly of mixed ferrocene/porphyrin monolayers on silicon

ADVANCED MATERIALS, 16(2), 133-+.

By: Q. Li n, G. Mathur n, S. Gowda n, S. Surthi n, Q. Zhao n, L. Yu n, J. Lindsey nโ€‰, D. Bocianโ€‰*, V. Misra*โ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 journal article

Multiple-bit storage properties of porphyrin monolayers on SiO2

APPLIED PHYSICS LETTERS, 85(10), 1829โ€“1831.

By: Q. Li n, S. Surthi n, G. Mathur n, S. Gowda n, Q. Zhao n, T. Sorenson, R. Tenent, K. Muthukumaran n, J. Lindsey nโ€‰, V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 journal article

Porphyrin architectures tailored for studies of molecular information storage

JOURNAL OF ORGANIC CHEMISTRY, 69(20), 6739โ€“6750.

By: C. Carcel n, J. Laha n, R. Loewe n, P. Thamyongkit n, K. Schweikart n, V. Misra nโ€‰, D. Bocianโ€‰ n, J. Lindsey nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 journal article

Porphyrins bearing arylphosphonic acid tethers for attachment to oxide surfaces

JOURNAL OF ORGANIC CHEMISTRY, 69(5), 1444โ€“1452.

By: K. Muthukumaran n, R. Loewe n, A. Ambroise n, S. Tamaru n, Q. Li n, G. Mathur n, D. Bocianโ€‰ n, V. Misra nโ€‰, J. Lindsey nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 journal article

Porphyrins bearing mono or tripodal benzylphosphonic acid tethers for attachment to oxide surfaces

JOURNAL OF ORGANIC CHEMISTRY, 69(5), 1453โ€“1460.

By: R. Loewe n, A. Ambroise n, K. Muthukumaran n, K. Padmaja n, A. Lysenko n, G. Mathur n, Q. Li n, D. Bocianโ€‰ n, V. Misra nโ€‰, J. Lindsey nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 article

Reliability of high-k dielectrics and its dependence on gate electrode and interfacial high-k bi-layer structure

MICROELECTRONICS RELIABILITY, Vol. 44, pp. 1513โ€“1518.

By: Y. Kim, R. Choi, R. Jha, J. Lee, V. Misraโ€‰ & J. Lee

Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 article

Stability of Ru- and Ta-based metal gate electrodes in contact with dielectrics for Si-CMOS

Chen, Z. Q., Misra, V., Haggerty, R. P., & Stemmer, S. (2004, August). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 241, pp. 2253โ€“2267.

By: Z. Chenโ€‰*, V. Misra nโ€‰, R. Haggerty* & S. Stemmerโ€‰*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 journal article

Synthesis of porphyrins bearing hydrocarbon tethers and facile covalent attachment to Si(100)

JOURNAL OF ORGANIC CHEMISTRY, 69(17), 5568โ€“5577.

By: Z. Liuโ€‰ n, A. Yasseri n, R. Loewe n, A. Lysenko n, V. Malinovskii n, Q. Zhao n, S. Surthi n, Q. Li n ...

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

A simulation study to evaluate the feasibility of midgap workfunction metal gates in 25 nm bulk CMOS

IEEE ELECTRON DEVICE LETTERS, 24(11), 707โ€“709.

By: K. Maitra n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: bandedge; bulk; CMOS; DIBL; metal gates; midgap; NMOSFETs; PMOSFETs; simulation; workfunction
Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Effect of the composition on the electrical properties of TaSixNy metal gate electrodes

IEEE ELECTRON DEVICE LETTERS, 24(7), 439โ€“441.

By: Y. Suh n, G. Heuss n, J. Lee n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: dual metal gates; gate Electrodes; low work function; MOS capacitors; N diffusion; TaSiN
Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Electrical characterization of redox-active molecular monolayers on SiO2 for memory applications

APPLIED PHYSICS LETTERS, 83(1), 198โ€“200.

By: Q. Li n, S. Surthi n, G. Mathur n, S. Gowda n, V. Misra nโ€‰, T. Sorenson, R. Tenent, W. Kuhr ...

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Thermal stability of TaSixNy films deposited by reactive sputtering on SiO2

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(5), F79โ€“F82.

By: Y. Suh n, G. Heuss n, V. Misra nโ€‰, D. Park & K. Limb

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2002 journal article

Capacitance and conductance characterization of ferrocene-containing self-assembled monolayers on silicon surfaces for memory applications

APPLIED PHYSICS LETTERS, 81(8), 1494โ€“1496.

By: Q. Li n, G. Mathur n, M. Homsi n, S. Surthi n, V. Misra nโ€‰, V. Malinovskii n, K. Schweikart n, L. Yuโ€‰ n ...

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2002 journal article

Electrical characteristics of TaSixNy/SO2/Si structures by Fowler-Nordheim current analysis

APPLIED PHYSICS LETTERS, 80(8), 1403โ€“1405.

By: Y. Suh n, G. Heuss n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2002 journal article

Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS

IEEE ELECTRON DEVICE LETTERS, 23(6), 354โ€“356.

By: V. Misra nโ€‰, H. Zhong n & H. Lazar n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: advanced gatestacks; CMOS; gate electrodes; metal alloy; metal gates; MOS transistors; Ru, Ru-Ta, Ta
Sources: Web Of Science, ORCID
Added: August 6, 2018

2002 journal article

Issues in high-kappa gate stack interfaces

MRS BULLETIN, 27(3), 212โ€“216.

By: V. Misra*โ€‰, G. Lucovsky* & G. Parsons*โ€‰

Contributors: V. Misra*โ€‰, G. Lucovsky* & G. Parsons*โ€‰

author keywords: gate stacks; high-dielectric-constant materials; high-kappa dielectrics; interface reactions; metal gates
Sources: Web Of Science, ORCID
Added: August 6, 2018

2001 journal article

Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices

APPLIED PHYSICS LETTERS, 79(7), 973โ€“975.

By: H. Lazar n, V. Misra nโ€‰, R. Johnson n & G. Lucovsky n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2001 journal article

Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics

APPLIED PHYSICS LETTERS, 78(8), 1134โ€“1136.

By: H. Zhong n, G. Heuss n, V. Misra nโ€‰, H. Luanโ€‰*, C. Leeโ€‰* & D. Kwong*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2001 article

Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics

Zhong, H. C., Heuss, G., Suh, Y. S., Misra, V., & Hong, S. N. (2001, December). JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 1493โ€“1498.

By: H. Zhong n, G. Heuss n, Y. Suh n, V. Misra nโ€‰ & S. Hong*

co-author countries: Korea (Republic of) ๐Ÿ‡ฐ๐Ÿ‡ท United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Ru; RuO2; ZrO2; Zr-silicate; MOS; dielectrics; gate electrodes
Sources: Web Of Science, ORCID
Added: August 6, 2018

2001 article

N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics

Misra, V., Kulkarni, M., & Zhong, H. C. (2001, December). JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 1499โ€“1505.

By: V. Misra nโ€‰, M. Kulkarni n & H. Zhong n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: hafnium-doped SiO2 films; interfacial properties; NMOS; PMOS; MOS-capacitor
Sources: Web Of Science, ORCID
Added: August 6, 2018

2001 journal article

Study of low-frequency charge pumping on thin stacked dielectrics

IEEE TRANSACTIONS ON ELECTRON DEVICES, 48(12), 2754โ€“2762.

By: C. Weintraub n, E. Vogel*, . Hauserโ€‰ n, N. Yangโ€‰*, V. Misra nโ€‰, J. Wortman n, J. Ganem*, P. Massonโ€‰*

co-author countries: France ๐Ÿ‡ซ๐Ÿ‡ท United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: bulk traps; charge pumping; interface traps; low frequency; near-interface traps; nitrides; oxynitrides
Sources: Web Of Science, ORCID
Added: August 6, 2018

2001 journal article

Use of metal-oxide-semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2

Applied Physics Letters, 78(26), 4166โ€“4168.

By: V. Misra nโ€‰, G. Heuss n & H. Zhong n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2000 journal article

Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS

IEEE ELECTRON DEVICE LETTERS, 21(12), 593โ€“595.

By: H. Zhong n, G. Heuss n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: advanced gatestacks; CMOS; conducting oxides; gate electrodes; metal gates; MOS capacitors; RuO2
Sources: Web Of Science, ORCID
Added: August 6, 2018

1999 journal article

A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1189โ€“1196.

By: I. Ban*, M. Ozturk*, V. Misra*โ€‰, J. Wortman*, D. Venables n & D. Maher n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

1999 journal article

Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1806โ€“1812.

By: G. Lucovsky, Y. Wu, H. Niimi, V. Misraโ€‰ & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

APPLIED PHYSICS LETTERS, 74(14), 2005โ€“2007.

By: G. Lucovsky n, Y. Wu n, H. Niimi n, V. Misra nโ€‰ & J. Phillips

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

1999 journal article

Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836โ€“1839.

By: V. Misraโ€‰, H. Lazar, Z. Wang, Y. Wu, H. Niimi, G. Lucovsky, J. Wortman, J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition

SOLID-STATE ELECTRONICS, 41(7), 1051โ€“1055.

By: P. Morfouli, G. Ghibaudo, E. Vogel n, W. Hill n, V. Misra nโ€‰, P. McLarty n, J. Wortman n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

Employment

Updated: February 27th, 2019 20:59

1998 - present

North Carolina State University Raleigh, NC, US
Distinguished Professor Electrical and Computer Engineering

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