Works (136)

2019 | journal article

Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(1), 539–545.

By: X. Yang, B. Lee & V. Misra

Source: NC State University Libraries
Added: January 14, 2019

2018 | journal article

Improvement of threshold voltage reliability of 4H-SiC MOSFETs with lanthanum silicate by high temperature forming gas anneal

IEEE Electron Device Letters, 39(2), 244–247.

By: X. Yang, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2018 | journal article

Investigation of O-3 adsorption on ultra-thin ALD SnO2 by QCM

IEEE Sensors Journal, 18(9), 3590–3594.

By: M. Lim, S. Mills, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2018 | journal article

On using the volatile mem-capacitive effect of TiO2 resistive random access memory to mimic the synaptic forgetting process

Journal of Electronic Materials, 47(2), 994–997.

By: B. Sarkar, S. Mills, B. Lee, W. Pitts, V. Misra & P. Franzon

Source: NC State University Libraries
Added: August 6, 2018

2017 | conference paper

Optimization of ALD high-k gate dielectric to improve AlGaN/GaN MOS-HFET DC characteristics and reliability

In 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA) (pp. 39–43).

By: F. Azam, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2016 | journal article

Electrical characteristics of SiO2 deposited by atomic layer deposition on 4H-SiC after nitrous oxide anneal

IEEE Transactions on Electron Devices, 63(7), 2826–2830.

By: X. Yang, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2016 | journal article

Low-power wearable systems for continuous monitoring of environment and health for chronic respiratory disease

IEEE Journal of Biomedical and Health Informatics, 20(5).

By: J. Dieffenderfer, H. Goodell, S. Mills, M. McKnight, S. Yao, F. Lin, E. Beppler, B. Bent ...

Source: NC State University Libraries
Added: August 6, 2018

2016 | conference paper

Metal oxide gas sensing characterization by low frequency noise spectroscopy

In 2016 ieee sensors.

Source: NC State University Libraries
Added: August 6, 2018

2016 | journal article

Mobile health: The power of wearables, sensors, and apps to transform clinical trials

Special Issue: Annals Reports, Vol 1375, 1375, 3–18.

By: B. Munos, P. Baker, B. Bot, M. Crouthamel, G. Vries, I. Ferguson, J. Hixson, L. Malek ...

Source: NC State University Libraries
Added: August 6, 2018

2016 | journal article

Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

Semiconductor Science and Technology, 31(3).

By: N. Ramanan, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2016 | conference paper

Room temperature sensing of VOCS by atomic layer deposition of metal oxide

In 2016 ieee sensors.

Source: NC State University Libraries
Added: August 6, 2018

2015 | journal article

ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications

Semiconductor Science and Technology, 30(12).

By: N. Ramanan, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2015 | journal article

Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory

Applied Physics Letters, 106(24).

By: N. Ramanan, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2015 | journal article

Application of AlGaN/GaN heterostructures for ultra-low power nitrogen dioxide sensing

ECS Journal of Solid State Science and Technology, 4(10), S3034–3037.

By: M. Lim, S. Mills, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2015 | journal article

Atomic layer deposition of SnO2 for selective room temperature low ppb level O-3 sensing

ECS Journal of Solid State Science and Technology, 4(10), S3059–3061.

By: S. Mills, M. Lim, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2015 | journal article

Comparison of methods for accurate characterization of interface traps in GaN MOS-HFET devices

IEEE Transactions on Electron Devices, 62(2), 546–553.

By: N. Ramanan, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2015 | journal article

Flexible technologies for self-powered wearable health and environmental sensing

Proceedings of the IEEE, 103(4), 665–681.

By: V. Misra, A. Bozkurt, B. Calhoun, T. Jackson, J. Jur, J. Lach, B. Lee, J. Muth ...

Source: NC State University Libraries
Added: August 6, 2018

2015 | journal article

High mobility 4H-SiC lateral MOSFETs using lanthanum silicate and atomic layer deposited SiO2

IEEE Electron Device Letters, 36(4), 312–314.

By: X. Yang, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2015 | journal article

Investigation of lanthanum silicate conditions on 4H-SiC MOSFET characteristics

IEEE Transactions on Electron Devices, 62(11), 3781–3785.

By: X. Yang, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2015 | conference paper

Self-powered wearable sensor platforms for wellness

In 2015 International Conference on Compilers, Architecture and Synthesis for Embedded Systems (CASES) (pp. 187–187).

By: V. Misra, J. Lach, A. Bozkurt, B. Calhoun, S. Datta & O. Oralkan

Source: NC State University Libraries
Added: August 6, 2018

2015 | conference paper

Ultra-low power sensing platform for personal health and personal environmental monitoring

In 2015 IEEE International Electron Devices Meeting (IEDM).

By: V. Misra, B. Lee, P. Manickam, M. Lim, S. Pasha, S. Mills, S. Bhansali

Source: NC State University Libraries
Added: August 6, 2018

2015 | journal article

Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications

Semiconductor Science and Technology, 30(10).

By: B. Sarkar, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2015 | conference paper

Understanding the influence of E-a and band-offset toward the conductance modulation in Al2O3 and HfO2 synaptic RRAM

In 2015 73rd Annual Device Research Conference (DRC) (pp. 149–150).

By: B. Sarkar, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2015 | conference paper

A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application

In WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (pp. 147–149).

By: I. Ji, B. Lee, S. Wang, V. Misra & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2014 | journal article

Device modeling for understanding AlGaN/GaN HEMT gate-lag

IEEE Transactions on Electron Devices, 61(6), 2012–2018.

By: N. Ramanan, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2014 | journal article

Dual floating gate unified memory MOSFET with simultaneous dynamic and non-volatile operation

IEEE Electron Device Letters, 35(1), 48–50.

Source: NC State University Libraries
Added: August 6, 2018

2014 | conference paper

Flash MOS-HFET operational stability for power converter circuits

In Physica status solidi c: current topics in solid state physics, vol 11, no 3-4 (Vol. 11, pp. 875–878).

By: C. Kirkpatrick, B. Lee, N. Ramanan & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2014 | conference paper

High mobility 4H-SiC MOSFETs using lanthanum silicate interface engineering and ALD deposited SiO2

In Silicon carbide and related materials 2013, pts 1 and 2 (Vol. 778-780, pp. 557–561).

By: X. Yang, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2014 | conference paper

High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability

In Proceedings of the international symposium on power semiconductor (pp. 269–272).

By: I. Ji, B. Lee, S. Wang, V. Misra, A. Huang & Y. Choi

Source: NC State University Libraries
Added: August 6, 2018

2014 | conference paper

Implications of lower zero-field activation energy of dielectric in Al2O3/HfO2 bi-layer dielectric RRAM forming process

In Nonvolatile memories 3 (Vol. 64, pp. 41–46).

By: B. Sarkar, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2014 | conference paper

A novel methodology using pulsed-IV for interface or border traps characterization on AlGaN/GaN MOSHFETs

In Proceedings of the international symposium on power semiconductor (pp. 366–369).

By: N. Ramanan, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric

Semiconductor Science and Technology, 28(7).

Source: NC State University Libraries
Added: August 6, 2018

2013 | conference paper

Investigation of intermediate dielectric for dual floating gate MOSFET

In 2013 13th Non-Volatile Memory Technology Symposium (NVMTS).

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

Molecular sentinel-on-chip for SERS-based biosensing

Physical Chemistry Chemical Physics, 15(16), 6008–6015.

By: H. Wang, A. Dhawan, Y. Du, D. Batchelor, D. Leonard, V. Misra, T. Vo-Dinh

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation

Semiconductor Science and Technology, 28(7).

Source: NC State University Libraries
Added: August 6, 2018

2012 | journal article

Atomic layer deposition of SiO2 for AlGaN/GaN MOS-HFETs

IEEE Electron Device Letters, 33(9), 1240–1242.

By: C. Kirkpatrick, B. Lee, R. Suri, X. Yang & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2012 | journal article

Effects of a high-k dielectric on the performance of III-V ballistic deflection transistors

IEEE Electron Device Letters, 33(8), 1120–1122.

By: V. Kaushal, I. Iniguez-de-la-Torre, T. Gonzalez, J. Mateos, B. Lee, V. Misra, M. Margala

Source: NC State University Libraries
Added: August 6, 2018

2012 | conference paper

Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application

In Physica status solidi c: current topics in solid state physics, vol 9, no 3-4 (Vol. 9, pp. 868–870).

Source: NC State University Libraries
Added: August 6, 2018

2012 | conference paper

Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage

In Physica status solidi c: current topics in solid state physics, vol 9, no 3-4 (Vol. 9, pp. 864–867).

Source: NC State University Libraries
Added: August 6, 2018

2012 | journal article

Work function extraction of metal gates with alternate channel materials

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 30(2).

By: M. Coan, D. Johnson, J. Woo, N. Biswas, V. Misra, P. Majhi, H. Harris

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory

Applied Physics Letters, 99(7).

By: R. Jeff, M. Yun, B. Ramalingam, B. Lee, V. Misra, G. Triplett, S. Gangopadhyay

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Hybrid top-down and bottom-up fabrication approach for wafer-scale plasmonic nanoplatforms

Small (Weinheim An Der Bergstrasse, Germany), 7(6), 727–731.

By: A. Dhawan, Y. Du, D. Batchelor, H. Wang, D. Leonard, V. Misra, M. Ozturk, M. Gerhold, V. Tuan

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Impact of AlTaO dielectric capping on device performance and reliability for advanced metal gate/high-k PMOS application

IEEE Transactions on Electron Devices, 58(9), 2928–2935.

By: B. Lee, D. Lichtenwalner, S. Novak & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Impact of Gd dopants on current polarization and the resulting effect on spin transfer velocity in Permalloy wires

Journal of Applied Physics, 110(3).

By: R. Thomas, M. Zhu, C. Dennis, V. Misra & R. McMichael

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Investigation of the origin of V(T)/V(FB) modulation by La(2)O(3) capping layer approaches for NMOS application: Role of la diffusion, effect of host high-k layer, and interface properties

IEEE Transactions on Electron Devices, 58(9), 3106–3115.

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Multivalued logic using a novel multichannel GaN MOS structure

IEEE Electron Device Letters, 32(10), 1379–1381.

By: N. Ramanan & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2011 | conference paper

Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics

In Physica status solidi c: current topics in solid state physics, vol 8, no 7-8 (Vol. 8).

By: C. Kirkpatrick, B. Lee, X. Yang & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Suppression of dielectric crystallization on metal by introduction of SiO(2) layer for metal floating gate memory blocking oxide

Applied Physics Letters, 99(22).

By: S. Jayanti & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

Encapsulation of organic solar cells with ultrathin barrier layers deposited by ozone-based atomic layer deposition

Organic Electronics, 11(12), 1896–1900.

By: S. Sarkar, J. Culp, J. Whyland, M. Garvan & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates

Applied Physics Letters, 96(11).

By: R. Suri, D. Lichtenwalner & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

Introduction to the special section on electronic and ionic interfaces to biomolecules and cells

IEEE Transactions on Nanotechnology, 9(3), 268–268.

By: C. Bartic, M. Chan, P. Fromherz, J. Judy, E. Kan, J. Leburton, J. Li, V. Misra, M. Reed, G. Timp

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

Methodologies for developing surface-enhanced Raman scattering (SERS) substrates for detection of chemical and biological molecules

IEEE Sensors Journal, 10(3), 608–616.

By: A. Dhawan, Y. Du, F. Yan, M. Gerhold, V. Misra & T. Vo-Dinh

Source: NC State University Libraries
Added: August 6, 2018

2010 | patent

Molecular memory devices including solid-state dielectric layers and related methods

By: V. Misra, R. Shrivastava, Z. Chen & G. Mathur

Source: NC State University Libraries
Added: August 6, 2018

2010 | conference paper

Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics

In 2010 international electron devices meeting - technical digest.

By: B. Lee, C. Kirkpatrick, X. Yang, S. Jayanti, R. Suri, J. Roberts, V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

Plasmonic nanoparticles and nanowires: Design, fabrication and application in sensing

Journal of Physical Chemistry. C, 114(16), 7480–7488.

By: T. Vo-Dinh, A. Dhawan, S. Norton, C. Khoury, H. Wang, V. Misra, M. Gerhold

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

Platinum nanoparticles grown by atomic layer deposition for charge storage memory applications

Journal of the Electrochemical Society, 157(6), H589–592.

By: S. Novak, B. Lee, X. Yang & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures

Applied Physics Letters, 96(9).

Source: NC State University Libraries
Added: August 6, 2018

2010 | conference paper

Ultimate scalability of TaN metal floating gate with incorporation of High-K blocking dielectrics for flash memory applications

In 2010 international electron devices meeting - technical digest.

By: S. Jayanti, X. Yang, R. Suri & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

low-frequency noise measurements of algan/gan metal-oxide-semiconductor heterostructure field-effect transistors with hfalo gate dielectric

IEEE Electron Device Letters, 31(9), 1041–1043.

By: C. Kayis, J. Leach, C. Zhu, M. Wu, X. Li, U. Ozgur, H. Morkoc, X. Yang, V. Misra, P. Handel

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Atomic layer deposition of hafnium dioxide on TiN and self-Assembled Monolayer Molecular Film

Journal of the Electrochemical Society, 156(7), H561–566.

By: Z. Chen, S. Sarkar, N. Biswas & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Erbium silicide formation on Si1-xCx epitaxial layers

Journal of the Electrochemical Society, 156(5), H378–383.

By: E. Alptekin, M. Ozturk, V. Misra, Y. Cho, Y. Kim & S. Chopra

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

Applied Physics Letters, 95(15).

By: D. Lichtenwalner, V. Misra, S. Dhar, S. Ryu & A. Agarwal

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Platinum germanosilicide contacts formed on strained and relaxed Si1-xGex layers

IEEE Transactions on Electron Devices, 56(6), 1220–1227.

By: E. Alptekin, C. Kirkpatrick, V. Misra & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Schottky barrier height of erbium silicide on Si1-xCx

IEEE Electron Device Letters, 30(9), 949–951.

By: E. Alptekin, M. Ozturk & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Sub-2 nm Size-tunable high-density Pt nanoparticle embedded nonvolatile memory

IEEE Electron Device Letters, 30(12), 1362–1364.

By: M. Yun, D. Mueller, M. Hossain, V. Misra & S. Gangopadhyay

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric

Applied Physics Letters, 94(12).

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Tuning of the platinum silicide schottky barrier height on n-type silicon by sulfur segregation

IEEE Electron Device Letters, 30(4), 331–333.

By: E. Alptekin, M. Ozturk & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2008 | journal article

Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

Applied Physics Letters, 93(19).

By: R. Suri, B. Lee, D. Lichtenwalner, N. Biswas & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2008 | journal article

Fabrication of large area nano-rings for MRAM application

Microelectronic Engineering, 85(7), 1555–1560.

By: Y. Luo & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2008 | journal article

Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric

Applied Physics Letters, 92(24).

By: R. Suri, D. Lichtenwalner & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2008 | journal article

Large area nanorings fabricated using an atomic layer deposition Al2O3 spacer for magnetic random access memory application

Nanotechnology, 19(26).

By: Y. Luo, Y. Du & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2008 | journal article

Modulating indium gallium zinc oxide transistor characteristics with discrete redox states of molecules embedded in the gate dielectric

Applied Physics Letters, 92(22).

By: S. Sarkar, A. Suresh, F. Myers, J. Muth & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Characteristics of Ni/Gd FUSI for NMOS gate electrode applications

IEEE Electron Device Letters, 28(7), 555–557.

By: B. Lee, N. Biswas, S. Novak & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2007 | patent

Crossbar array microelectronic electrochemical cells

Washington, DC: U.S. Patent and Trademark Office.

By: V. Misra & J. Damiano

Source: NC State University Libraries
Added: August 6, 2018

2007 | patent

High temperature attachment of organic molecules to substrates

Washington, DC: U.S. Patent and Trademark Office.

By: D. Bocian, J. Lindsey, Z. Liu, A. Yesseri, V. Misra, Q. Zhao, Q. Li, S. Surthi, R. Loewe

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study

Journal of Applied Physics, 102(11).

By: K. Maitra, M. Frank, V. Narayanan, V. Misra & E. Cartier

Source: NC State University Libraries
Added: August 6, 2018

2007 | patent

In situ patterning of electrolyte for molecular information storage devices

Washington, DC: U.S. Patent and Trademark Office.

By: V. Misra, D. Bocian, W. Kuhr & J. Lindsey

Source: NC State University Libraries
Added: August 6, 2018

2007 | patent

Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk, V. Misra & S. Chopra

Source: NC State University Libraries
Added: August 6, 2018

2007 | patent

Optoelectonic devices having arrays of quantum-dot compound semiconductor superlattices therein

Washington, DC: U.S. Patent and Trademark Office.

By: Z. Zhang, V. Misra, S. Bedair & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Valence band tunneling model for charge transfer of redox-active molecules attached to n- and p-silicon substrates

Applied Physics Letters, 90(14).

By: S. Gowda, G. Mathur & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

The effects of nickel germanosilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon

Applied Physics Letters, 91(14).

By: S. Chopra, M. Ozturk, V. Misra, Z. Ren & L. McNeil

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

A molecular memory device formed by HfO2 encapsulation of redox-active molecules

Applied Physics Letters, 91(17).

By: Z. Chen, B. Lee, S. Sarkar, S. Gowda & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy

Applied Physics Letters, 88(20).

By: S. Chopra, M. Ozturk, V. Misra, K. McGuire & L. McNeil

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Critical thickness of heavily boron-doped silicon-germanium alloys

Applied Physics Letters, 89(20).

By: S. Chopra, M. Ozturk, V. Misra, K. McGuire & L. McNeil

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Electrical and physical analysis of MoTa alloy for gate electrode applications

Journal of the Electrochemical Society, 153(5), G417–419.

By: B. Chen, N. Biswas & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes

Journal of the Electrochemical Society, 153(9), F210–214.

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Hybrid silicon/molecular FETs: A study of the interaction of redox-active molecules with silicon MOSFETs

IEEE Transactions on Nanotechnology, 5(3), 258–264.

By: S. Gowda, G. Mathur, Q. Li, S. Surthi & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

IEEE Electron Device Letters, 27(4), 228–230.

By: B. Chen, R. Jha, H. Lazar, N. Biswas, J. Lee, B. Lee, L. Wielunski, E. Garfunkel, V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Large-area long-range ordered anisotropic magnetic nanostructure fabrication by photolithography

Nanotechnology, 17(19), 4909–4911.

By: Y. Luo & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Work function tuning via interface dipole by ultrathin reaction layers using AlTa and AlTaN alloys

IEEE Electron Device Letters, 27(9), 731–733.

By: B. Chen, R. Jha & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2005 | journal article

Approach for investigating lateral conduction in self-assembled monolayers

Applied Physics Letters, 87(26).

By: S. Gowda, G. Mathur, Q. Li, S. Surthi & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2005 | journal article

Electrical characteristics of HfO2 dielectrics with Ru metal gate electrodes

Journal of the Electrochemical Society, 152(9), F138–141.

By: Y. Suh, H. Lazar, B. Chen, J. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2005 | journal article

Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application

Applied Physics Letters, 86(2).

By: N. Biswas, J. Gurganus, V. Misra, Y. Yang & S. Stemmer

Source: NC State University Libraries
Added: August 6, 2018

2005 | patent

High/low work function metal alloys for integrated circuit electrodes

Washington, DC: U.S. Patent and Trademark Office.

By: V. Misra, H. Zhong & S. Hong

Source: NC State University Libraries
Added: August 6, 2018

2005 | patent

Hybrid molecular memory devices and methods of use thereof

Washington, DC: U.S. Patent and Trademark Office.

By: V. Misra, S. Gowda & G. Mathur

Source: NC State University Libraries
Added: August 6, 2018

2005 | journal article

Impact of Ge on integration of HfO2 and metal gate electrodes on strained Si channels

Applied Physics Letters, 87(7).

By: Y. Lin, M. Ozturk, B. Chen, S. Rhee, J. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2005 | journal article

Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applications

Applied Physics Letters, 87(22).

By: R. Jha, J. Lee, P. Majhi & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2005 | patent

Methods of fabricating crossbar array microelectronic electrochemical cells

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2005 | patent

Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein

Washington, DC: U.S. Patent and Trademark Office.

By: Z. Zhang, V. Misra, S. Bedair & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2005 | journal article

Physical and electrical analysis of RuxYy alloys for gate electrode applications

Applied Physics Letters, 86(5).

By: B. Chen, Y. Suh, J. Lee, J. Gurganus, V. Misra & C. Cabral

Source: NC State University Libraries
Added: August 6, 2018

2019 | journal article

Properties of Ta-Mo alloy gate electrode for n-MOSFET

Journal of Materials Science, 40(10-Sep), 2693–2695.

By: C. Lee, J. Kim, S. Hong, H. Zhong, B. Chen & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2019 | journal article

Properties of functionalized redox-active monolayers on thin silicon dioxide - A study of the. dependence of retention time on oxide thickness

IEEE Transactions on Nanotechnology, 4(2), 278–283.

Source: NC State University Libraries
Added: August 6, 2018

2019 | journal article

Redox-active monolayers on nano-scale silicon electrodes

Nanotechnology, 16(2), 257–261.

By: Q. Zhao, Y. Luo, S. Surthi, Q. Li, G. Mathur, S. Gowda, P. Larson, M. Johnson, V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2005 | journal article

Work function tuning of nickel silicide by co-sputtering nickel and silicon

Applied Physics Letters, 87(17).

By: N. Biswas, J. Gurganus & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(1), 175–179.

By: Y. Suh, G. Heuss & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2004 | patent

Method and system for molecular charge storage field effect transistor

Washington, DC: U.S. Patent and Trademark Office.

By: V. Misra, D. Bocian, W. Kuhr & J. Lindsey

Source: NC State University Libraries
Added: August 6, 2018

2004 | patent

Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates

Zhang, Z., Misra, V., Bedair, S. M. A., & Ozturk, M. (2004, March 23). Washington, DC: U.S. Patent and Trademark Office.

By: Z. Zhang, V. Misra, S. Bedair & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Multibit memory using self-assembly of mixed ferrocene/porphyrin monolayers on silicon

Advanced Materials, 16(2), 133-.

By: Q. Li, G. Mathur, S. Gowda, S. Surthi, Q. Zhao, L. Yu, J. Lindsey, D. Bocian, V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Multiple-bit storage properties of porphyrin monolayers on SiO2

Applied Physics Letters, 85(10), 1829–1831.

By: Q. Li, S. Surthi, G. Mathur, S. Gowda, Q. Zhao, T. Sorenson, R. Tenent, K. Muthukumaran, J. Lindsey, V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Porphyrin architectures tailored for studies of molecular information storage

Journal of Organic Chemistry, 69(20), 6739–6750.

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Porphyrins bearing arylphosphonic acid tethers for attachment to oxide surfaces

Journal of Organic Chemistry, 69(5), 1444–1452.

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Porphyrins bearing mono or tripodal benzylphosphonic acid tethers for attachment to oxide surfaces

Journal of Organic Chemistry, 69(5), 1453–1460.

By: R. Loewe, A. Ambroise, K. Muthukumaran, K. Padmaja, A. Lysenko, G. Mathur, Q. Li, D. Bocian, V. Misra, J. Lindsey

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Reliability of high-k dielectrics and its dependence on gate electrode and interfacial high-k bi-layer structure

Microelectronics Reliability, 44(11-Sep), 1513–1518.

By: Y. Kim, R. Choi, R. Jha, J. Lee, V. Misra & J. Lee

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Stability of Ru- and Ta-based metal gate electrodes in contact with dielectrics for Si-CMOS

Chen, Z. Q., Misra, V., Haggerty, R. P., & Stemmer, S. Physica Status Solidi. B, Basic Solid State Physics, 241(10), 2253–2267.

By: Z. Chen, V. Misra, R. Haggerty & S. Stemmer

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Synthesis of porphyrins bearing hydrocarbon tethers and facile covalent attachment to Si(100)

Journal of Organic Chemistry, 69(17), 5568–5577.

By: Z. Liu, A. Yasseri, R. Loewe, A. Lysenko, V. Malinovskii, Q. Zhao, S. Surthi, Q. Li ...

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

A capacitance-based methodology for work function extraction of metals on high-kappa

IEEE Electron Device Letters, 25(6), 420–423.

By: R. Jha, J. Gurganos, Y. Kim, R. Choi, J. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Effect of the composition on the electrical properties of TaSixNy metal gate electrodes

IEEE Electron Device Letters, 24(7), 439–441.

By: Y. Suh, G. Heuss, J. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Electrical characterization of redox-active molecular monolayers on SiO2 for memory applications

Applied Physics Letters, 83(1), 198–200.

By: Q. Li, S. Surthi, G. Mathur, S. Gowda, V. Misra, T. Sorenson, R. Tenent, W. Kuhr ...

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Thermal stability of TaSixNy films deposited by reactive sputtering on SiO2

Journal of the Electrochemical Society, 150(5), F79–82.

By: Y. Suh, G. Heuss, V. Misra, D. Park & K. Limb

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

A simulation study to evaluate the feasibility of midgap workfunction metal gates in 25 nm bulk CMOS

IEEE Electron Device Letters, 24(11), 707–709.

By: K. Maitra & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Capacitance and conductance characterization of ferrocene- containing self-assembled monolayers on silicon surfaces for memory applications

Applied Physics Letters, 81(8), 1494–1496.

By: Q. Li, G. Mathur, M. Homsi, S. Surthi, V. Misra, V. Malinovskii, K. Schweikart, L. Yu ...

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Electrical characteristics of TaSixNy/SO2/Si structures by Fowler-Nordheim current analysis

Applied Physics Letters, 80(8), 1403–1405.

By: Y. Suh, G. Heuss & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS

IEEE Electron Device Letters, 23(6), 354–356.

By: V. Misra, H. Zhong & H. Lazar

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Issues in high-kappa gate stack interfaces

MRS Bulletin, 27(3), 212–216.

By: V. Misra, G. Lucovsky & G. Parsons

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices

Applied Physics Letters, 79(7), 973–975.

By: H. Lazar, V. Misra, R. Johnson & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics

Applied Physics Letters, 78(8), 1134–1136.

By: H. Zhong, G. Heuss, V. Misra, H. Luan, C. Lee & D. Kwong

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Electrical properties of Ru and RuO2 gate electrodes for Si- PMOSFET with ZrO2 and Zr-silicate dielectrics

Journal of Electronic Materials, 30(12), 1493–1498.

By: H. Zhong, G. Heuss, Y. Suh, V. Misra & S. Hong

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics

Journal of Electronic Materials, 30(12), 1499–1505.

By: V. Misra, M. Kulkarni & H. Zhong

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Study of low-frequency charge pumping on thin stacked dielectrics

IEEE Transactions on Electron Devices, 48(12), 2754–2762.

By: C. Weintraub, E. Vogel, J. Hauser, N. Yang, V. Misra, J. Wortman, J. Ganem, P. Masson

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Use of metal-oxide-semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2

Applied Physics Letters, 78(26), 4166–4168.

By: V. Misra, G. Heuss & H. Zhong

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS

IEEE Electron Device Letters, 21(12), 593–595.

By: H. Zhong, G. Heuss & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1806–1812.

By: G. Lucovsky, Y. Wu, H. Niimi, V. Misra & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

Applied Physics Letters, 74(14), 2005–2007.

By: G. Lucovsky, Y. Wu, H. Niimi, V. Misra & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836–1839.

By: V. Misra, H. Lazar, Z. Wang, Y. Wu, H. Niimi, G. Lucovsky, J. Wortman, J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering

Journal of the Electrochemical Society, 146(3), 1189–1196.

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition

Solid-State Electronics, 41(7), 1051–1055.

By: P. Morfouli, G. Ghibaudo, E. Vogel, W. Hill, V. Misra, P. McLarty, J. Wortman

Source: NC State University Libraries
Added: August 6, 2018