Veena Misra

Zhou, Y., Dieffenderfer, J., Aleem, M., Lee, B., & Misra, V. (2024). A Novel Monolithic MEMS Array for E-Nose Applications. IEEE SENSORS LETTERS, 8(2). https://doi.org/10.1109/LSENS.2024.3355902

Dieffenderfer, J., Brewer, A., Noonan, M. A., Smith, M., Eichenlaub, E., Haley, K. L., … Bozkurt, A. (2023). A Wearable System for Continuous Monitoring and Assessment of Speech, Gait, and Cognitive Decline for Early Diagnosis of ADRD. 2023 45TH ANNUAL INTERNATIONAL CONFERENCE OF THE IEEE ENGINEERING IN MEDICINE & BIOLOGY SOCIETY, EMBC. https://doi.org/10.1109/EMBC40787.2023.10339986

Singh, M. P., Chi, M., & Misra, V. (2023). Healthful Connected Living: Vision and Challenges for the Case of Obesity. IEEE INTERNET COMPUTING, 27(3), 7–14. https://doi.org/10.1109/MIC.2023.3257994

Zhou, Y., Dieffenderfer, J., Sennik, E., Aleem, M., Speight, J., Vasisht, S., … Misra, V. (2023). Performance of A Monolithic E-Nose Array Integrating MEMS and ALD Processing. 2023 IEEE SENSORS. https://doi.org/10.1109/SENSORS56945.2023.10325054

Zhou, Y., Mohaddes, F., Lee, C., Rao, S., Mills, A. C., Curry, A. C., … Misra, V. (2022). A Wearable Electrocardiography Armband Resilient Against Artifacts. IEEE SENSORS JOURNAL, 22(19), 18970–18977. https://doi.org/10.1109/JSEN.2022.3197060

Ashik, E. K., Isukapati, S. B., Zhang, H., Liu, T., Gupta, U., Morgan, A. J., … Lee, B. (2022). Bias Temperature Instability on SiC n- and p-MOSFETs for High Temperature CMOS Applications. 2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). https://doi.org/10.1109/IRPS48227.2022.9764565

Latif, T., Dieffenderfer, J., Tanneeru, A., Lee, B., Misra, V., & Bozkurt, A. (2021). Evaluation of Environmental Enclosures for Effective Ambient Ozone Sensing in Wrist-worn Health and Exposure Trackers. 2021 IEEE SENSORS. https://doi.org/10.1109/SENSORS47087.2021.9639530

Padmanabhan Ramesh, V., Sargolzaeiaval, Y., Neumann, T., Misra, V., Vashaee, D., Dickey, M. D., & Ozturk, M. C. (2021). Flexible thermoelectric generator with liquid metal interconnects and low thermal conductivity silicone filler. NPJ FLEXIBLE ELECTRONICS, 5(1). https://doi.org/10.1038/s41528-021-00101-3

Lee, B., Lim, M., & Misra, V. (2021). Wearable skin vapor sensing system for continuous monitoring of various health and lifestyles. 2021 IEEE SENSORS. https://doi.org/10.1109/SENSORS47087.2021.9639471

Azam, F., Tanneeru, A., Lee, B., & Misra, V. (2020). Engineering a Unified Dielectric Solution for AlGaN/GaN MOS-HFET Gate and Access Regions. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(3), 881–887. https://doi.org/10.1109/TED.2020.2969394

Sargolzaeiaval, Y., Ramesh, V. P., Neumann, T. V., Misra, V., Vashaee, D., Dickey, M. D., & Ozturk, M. C. (2020). Flexible thermoelectric generators for body heat harvesting - Enhanced device performance using high thermal conductivity elastomer encapsulation on liquid metal interconnects. APPLIED ENERGY, 262. https://doi.org/10.1016/j.apenergy.2019.114370

Tanneeru, A., Akbulut, F. P., Lee, B., & Misra, V. (2019). A novel monolithic array of multiple metal oxide sensors for E-Nose applications via selective on-chip annealing of nanolayered ALD stacks. 2019 IEEE SENSORS. Presented at the 2019 IEEE SENSORS. https://doi.org/10.1109/SENSORS43011.2019.8956877

Yang, X., Lee, B., & Misra, V. (2019). Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx. IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(1), 539–545. https://doi.org/10.1109/TED.2018.2875094

Misra, V., Bozkurt, A., Calhoun, B. H., Datta, S., Dickey, M., Kiani, M., … Werner, D. (2019). Optimizing the energy balance to achieve autonomous self-powering for vigilant health and IoT applications. Journal of Physics: Conference Series, 1407, 012001. https://doi.org/10.1088/1742-6596/1407/1/012001

Daniele, M., Lobaton, E., & Misra", V. (2019). Reconfigurable Sensor Systems Integrated with Artificial Intelligence and Data Harnessing to Enable Personalized Medicine [NSF Workshop Report]. NSF Workshop Report presented at the NSF Workshop, Alexandria, VA. Retrieved from National Science Foundation website: https://assistcenter.org/wp-content/uploads/2019/09/NSFWorkshop_Report-082119-v2.pdf

Tanneeru, A., Lee, B., & Misra, V. (2018). Building Blocks of a New ALD E-Nose - A First Step: N-Type and P-Type ALD Sensors. 2018 IEEE SENSORS. Presented at the 2018 IEEE Sensors. https://doi.org/10.1109/icsens.2018.8589752

Kang, M. S., Lawless, K., Lee, B. M., & Misra, V. (2018). Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO<sub>2</sub> Gate Dielectric. Materials Science Forum, 924, 482–485. https://doi.org/10.4028/www.scientific.net/msf.924.482

Akbulut, F. P., Lawless, K., Tanneeru, A., Rao, S., Lee, B., & Misra, V. (2018). Estimation of Beat-to-Beat Interval from Wearable Photoplethysmography Sensor on Different Measurement Sites During Daily Activities. 2018 IEEE SENSORS. Presented at the 2018 IEEE Sensors. https://doi.org/10.1109/icsens.2018.8589611

Tanneeru, A., Taylor, Z., Lee, B., & Misra, V. (2018). Highly Sensitive ALD SnO2 Sensors and the Role of its Thickness in Gas Sensing Capabilities. 2018 IEEE SENSORS. Presented at the 2018 IEEE Sensors. https://doi.org/10.1109/icsens.2018.8589634

Kang, M. S., Lee, B. M., & Misra, V. (2018). Improved Threshold Voltage Instability in 4H-SiC MOSFETs with Atomic Layer Deposited SiO₂. Materials Science Forum, 924, 498–501. https://doi.org/10.4028/www.scientific.net/msf.924.498

Yang, X., Lee, B., & Misra, V. (2018). Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs With Lanthanum Silicate by High Temperature Forming Gas Anneal. IEEE ELECTRON DEVICE LETTERS, 39(2), 244–247. https://doi.org/10.1109/led.2017.2785851

Lim, M., Mills, S., Lee, B., & Misra, V. (2018). Investigation of O-3 Adsorption on Ultra-Thin ALD SnO2 by QCM. IEEE SENSORS JOURNAL, 18(9), 3590–3594. https://doi.org/10.1109/jsen.2018.2815698

Sarkar, B., Mills, S., Lee, B., Pitts, W. S., Misra, V., & Franzon, P. D. (2018). On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process. JOURNAL OF ELECTRONIC MATERIALS, 47(2), 994–997. https://doi.org/10.1007/s11664-017-5914-x

Azam, F., Lee, B., & Misra, V. (2017). Optimization of ALD high-k gate dielectric to improve AlGaN/GaN MOS-HFET DC characteristics and reliability. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), 39–43. https://doi.org/10.1109/wipda.2017.8170499

Foley, R., Asare, P., Delborne, J., Lach, J., & Misra, V. (2017). Prototype to Patient Treatment: Dialogue on Safety, Regulation, Privacy, Security, and Acceptability  for Wearable Medical Devices —  A Workshop Report (National Science Foundation Grant Report No. 1160483). https://doi.org/10.18130/V3804XJ4K

Mills, S., Lee, B., & Misra, V. (2017). Room temperature ozone and humidity response evolution of atomic layer deposited SnO<inf>2</inf> sensors. 2017 IEEE SENSORS. Presented at the 2017 IEEE SENSORS. https://doi.org/10.1109/icsens.2017.8234334

Yang, X., Lee, B., & Misra, V. (2016). Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal. IEEE Transactions on Electron Devices, 63(7), 2826–2830. https://doi.org/10.1109/ted.2016.2565665

Dieffenderfer, J., Goodell, H., Mills, S., McKnight, M., Yao, S., Lin, F., … Bozkurt, A. (2016). Low-Power Wearable Systems for Continuous Monitoring of Environment and Health for Chronic Respiratory Disease. IEEE Journal of Biomedical and Health Informatics, 20(5), 1251–1264. https://doi.org/10.1109/jbhi.2016.2573286

Lim, M., Malhotra, A., Mills, S., Muth, J., Lee, B., & Misra, V. (2016). Metal oxide gas sensing characterization by low frequency noise spectroscopy. 2016 ieee sensors. https://doi.org/10.1109/icsens.2016.7808835

Munos, B., Baker, P. C., Bot, B. M., Crouthamel, M., Vries, G., Ferguson, I., … Wang, P. (2016). Mobile health: the power of wearables, sensors, and apps to transform clinical trials. SPECIAL ISSUE: ANNALS REPORTS, VOL 1375, Vol. 1375, pp. 3–18. https://doi.org/10.1111/nyas.13117

Ramanan, N., Lee, B., & Misra, V. (2016). Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 31(3). https://doi.org/10.1088/0268-1242/31/3/035016

TANNEERU, A. K. H. I. L. E. S. H., Mills, S., Lim, M., Mahmud, M. M., Dieffenderfer, J., Bozkurt, A., … Misra, V. (2016). Room temperature sensing of VOCS by atomic layer deposition of metal oxide. 2016 ieee sensors. https://doi.org/10.1109/icsens.2016.7808786

Ji, I. H., Lee, B., Wang, S. Z., Misra, V., & Huang, A. Q. (2015). A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application. WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 147–149. https://doi.org/10.1109/wipda.2015.7369277

Ramanan, N., Lee, B., & Misra, V. (2015). ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(12). https://doi.org/10.1088/0268-1242/30/12/125017

Ramanan, N., Lee, B., & Misra, V. (2015). Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory. Applied Physics Letters, 106(24), 243503. https://doi.org/10.1063/1.4922799

Lim, M., Mills, S., Lee, B., & Misra, V. (2015). Application of AlGaN/GaN Heterostructures for Ultra-Low Power Nitrogen Dioxide Sensing. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 4(10), S3034–S3037. https://doi.org/10.1149/2.0101510jss

Mills, S., Lim, M., Lee, B., & Misra, V. (2015). Atomic Layer Deposition of SnO2 for Selective Room Temperature Low ppb Level O-3 Sensing. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 4(10), S3059–S3061. https://doi.org/10.1149/2.0111510jss

Ramanan, N., Lee, B., & Misra, V. (2015). Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices. IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(2), 546–553. https://doi.org/10.1109/ted.2014.2382677

Singamaneni, S. R., Prater, J. T., Nori, S., Kumar, D., Lee, B., Misra, V., & Narayan, J. (2015). Ferroelectric and magnetic properties of multiferroic BiFeO3-La0.7Sr0.3MnO3 heterostructures integrated with Si (100). Journal of Applied Physics, 117(17), 17D908. https://doi.org/10.1063/1.4913811

Misra, V., Bozkurt, A., Calhoun, B., Jackson, T. N., Jur, J. S., Lach, J., … Zhu, Y. (2015). Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing. PROCEEDINGS OF THE IEEE, 103(4), 665–681. https://doi.org/10.1109/jproc.2015.2412493

Yang, X., Lee, B., & Misra, V. (2015). High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2. IEEE ELECTRON DEVICE LETTERS, 36(4), 312–314. https://doi.org/10.1109/led.2015.2399891

Yang, X., Lee, B., & Misra, V. (2015). Investigation of Lanthanum Silicate Conditions on 4H-SiC MOSFET Characteristics. IEEE Transactions on Electron Devices, 62(11), 3781–3785. https://doi.org/10.1109/ted.2015.2480047

Misra, V., Lach, J., Bozkurt, A., Calhoun, B., Datta, S., & Oralkan, O. (2015). Self-powered wearable sensor platforms for wellness. 2015 International Conference on Compilers, Architecture and Synthesis for Embedded Systems (CASES), 187–187.

Misra, V., Lee, B., Manickam, P., Lim, M., Pasha, S. K., Mills, S., & Bhansali, S. (2015). Ultra-low power sensing platform for personal health and personal environmental monitoring. 2015 IEEE International Electron Devices Meeting (IEDM). https://doi.org/10.1109/iedm.2015.7409687

Sarkar, B., Lee, B., & Misra, V. (2015). Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(10). https://doi.org/10.1088/0268-1242/30/10/105014

Sarkar, B., Lee, B., & Misra, V. (2015). Understanding the influence of E-a and band-offset toward the conductance modulation in Al2O3 and HfO2 synaptic RRAM. 2015 73rd Annual Device Research Conference (DRC), 149–150. https://doi.org/10.1109/drc.2015.7175599

Ramanan, N., Lee, B., & Misra, V. (2014). A novel methodology using pulsed-IV for interface or border traps characterization on AlGaN/GaN MOSHFETs. Proceedings of the international symposium on power semiconductor, 366–369. https://doi.org/10.1109/ispsd.2014.6856052

Ramanan, N., Lee, B., & Misra, V. (2014). Device Modeling for Understanding AlGaN/GaN HEMT Gate-Lag. IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(6), 2012–2018. https://doi.org/10.1109/ted.2014.2313814

Sarkar, B., Ramanan, N., Jayanti, S., Di Spigna, N., Lee, B., Franzon, P., & Misra, V. (2014). Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation. IEEE ELECTRON DEVICE LETTERS, 35(1), 48–50. https://doi.org/10.1109/led.2013.2289751

Kirkpatrick, C., Lee, B., Ramanan, N., & Misra, V. (2014). Flash MOS-HFET operational stability for power converter circuits. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 875–878. https://doi.org/10.1002/pssc.201300547

Yang, X., Lee, B., & Misra, V. (2014). High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2. SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Vol. 778-780, pp. 557–561. https://doi.org/10.4028/www.scientific.net/msf.778-780.557

Ji, I. H., Lee, B. M., Wang, S. Z., Misra, V., Huang, A. Q., & Choi, Y. H. (2014). High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability. Proceedings of the international symposium on power semiconductor, 269–272. https://doi.org/10.1109/ispsd.2014.6856028

Sarkar, B., Lee, B., & Misra, V. (2014). Implications of lower zero-field activation energy of dielectric in Al2O3/HfO2 bi-layer dielectric RRAM forming process. Nonvolatile memories 3, 64(14), 41–46.

Lee, B., Choi, Y. H., Kirkpatrick, C., Huang, A. Q., & Misra, V. (2013). Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7). https://doi.org/10.1088/0268-1242/28/7/074016

Sarkar, B., Jayanti, S., Spigna, N. D., Lee, B., Misra, V., & Franzon, P. (2013). Investigation of intermediate dielectric for dual floating gate MOSFET. 2013 13th Non-Volatile Memory Technology Symposium (NVMTS). https://doi.org/10.1109/nvmts.2013.6851052

Wang, H.-N., Dhawan, A., Du, Y., Batchelor, D., Leonard, D. N., Misra, V., & Vo-Dinh, T. (2013). Molecular sentinel-on-chip for SERS-based biosensing. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 15(16), 6008–6015. https://doi.org/10.1039/c3cp00076a

Ramanan, N., Lee, B., Kirkpatrick, C., Suri, R., & Misra, V. (2013). Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7). https://doi.org/10.1088/0268-1242/28/7/074004

Di Spigna, N., Schinke, D., Jayanti, S., Misra, V., & Franzon, P. (2013). Simulation and Experimental Characterization of a Unified Memory Device with Two Floating-Gates. In VLSI-SoC: From Algorithms to Circuits and System-on-Chip Design (pp. 217–233). https://doi.org/10.1007/978-3-642-45073-0_12

Kirkpatrick, C. J., Lee, B., Suri, R., Yang, X., & Misra, V. (2012). Atomic Layer Deposition of SiO2 for AlGaN/GaN MOS-HFETs. IEEE ELECTRON DEVICE LETTERS, 33(9), 1240–1242. https://doi.org/10.1109/led.2012.2203782

Kaushal, V., Iniguez-de-la-Torre, I., Gonzalez, T., Mateos, J., Lee, B., Misra, V., & Margala, M. (2012). Effects of a High-k Dielectric on the Performance of III-V Ballistic Deflection Transistors. IEEE ELECTRON DEVICE LETTERS, 33(8), 1120–1122. https://doi.org/10.1109/led.2012.2197669

Lee, B., Kirkpatrick, C., Choi, Y.-hwan, Yang, X., Huang, A. Q., & Misra, V. (2012). Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 868–870. https://doi.org/10.1002/pssc.201100422

Kirkpatrick, C., Lee, B., Choi, Y. H., Huang, A., & Misra, V. (2012). Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 864–867. https://doi.org/10.1002/pssc.201100421

Coan, M., Johnson, D., Woo, J. H., Biswas, N., Misra, V., Majhi, P., & Harris, H. R. (2012). Work function extraction of metal gates with alternate channel materials. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 30(2). https://doi.org/10.1116/1.3679412

Jeff, R. C., Jr., Yun, M., Ramalingam, B., Lee, B., Misra, V., Triplett, G., & Gangopadhyay, S. (2011). Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory. APPLIED PHYSICS LETTERS, 99(7). https://doi.org/10.1063/1.3625426

Dhawan, A., Du, Y., Batchelor, D., Wang, H.-N., Leonard, D., Misra, V., … Vo-Dinh, T. (2011). Hybrid Top-Down and Bottom-Up Fabrication Approach for Wafer-Scale Plasmonic Nanoplatforms. SMALL, 7(6), 727–731. https://doi.org/10.1002/smll.201002186

Lee, B., Lichtenwalner, D. J., Novak, S. R., & Misra, V. (2011). Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-k PMOS Application. IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 2928–2935. https://doi.org/10.1109/ted.2011.2160064

Thomas, R. L., Zhu, M., Dennis, C. L., Misra, V., & McMichael, R. D. (2011). Impact of Gd dopants on current polarization and the resulting effect on spin transfer velocity in Permalloy wires. JOURNAL OF APPLIED PHYSICS, 110(3). https://doi.org/10.1063/1.3610517

Lee, B., Novak, S. R., Lichtenwalner, D. J., Yang, X., & Misra, V. (2011). Investigation of the Origin of V-T/V-FB Modulation by La2O3 Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-k Layer, and Interface Properties. IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 3106–3115. https://doi.org/10.1109/ted.2011.2159306

Kayis, C., Leach, J. H., Zhu, C. Y., Wu, M., Li, X., Özgür, Ü., … Handel, P. H. (2011). Measurements of generation-recombination effect by low-frequency phase-noise technique in AlGaN/GaN MOSHFETs. Physica Status Solidi (c), 8(5), 1539–1543. https://doi.org/10.1002/pssc.201000873

Ramanan, N., & Misra, V. (2011). Multivalued Logic Using a Novel Multichannel GaN MOS Structure. IEEE ELECTRON DEVICE LETTERS, 32(10), 1379–1381. https://doi.org/10.1109/led.2011.2163149

Kirkpatrick, C., Lee, B., Yang, X., Misra, V., Wetzel, C., & Khan, A. (2011). Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8. https://doi.org/10.1002/pssc.201001064

Jayanti, S., & Misra, V. (2011). Suppression of dielectric crystallization on metal by introduction of SiO2 layer for metal floating gate memory blocking oxide. APPLIED PHYSICS LETTERS, 99(22). https://doi.org/10.1063/1.3661173

Sarkar, S., Culp, J. H., Whyland, J. T., Garvan, M., & Misra, V. (2010). Encapsulation of organic solar cells with ultrathin barrier layers deposited by ozone-based atomic layer deposition. ORGANIC ELECTRONICS, 11(12), 1896–1900. https://doi.org/10.1016/j.orgel.2010.08.020

Suri, R., Kirkpatrick, C. J., Lichtenwalner, D. J., & Misra, V. (2010). Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC. Applied Physics Letters, 96(4), 042903. https://doi.org/10.1063/1.3291620

Suri, R., Lichtenwalner, D. J., & Misra, V. (2010). Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates. APPLIED PHYSICS LETTERS, 96(11). https://doi.org/10.1063/1.3357422

Bartic, C., Chan, M., Fromherz, P., Judy, J. W., Kan, E. C., Leburton, J.-P., … Timp, G. L. (2010, May). Introduction to the Special Section on Electronic and Ionic Interfaces to Biomolecules and Cells. IEEE TRANSACTIONS ON NANOTECHNOLOGY, Vol. 9, pp. 268–268. https://doi.org/10.1109/tnano.2010.2049699

Kayis, C., Leach, J. H., Zhu, C. Y., Wu, M., Li, X., Oezguer, U., … Handel, P. H. (2010). Low-Frequency Noise Measurements of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric. IEEE ELECTRON DEVICE LETTERS, 31(9), 1041–1043. https://doi.org/10.1109/led.2010.2055823

Dhawan, A., Du, Y., Yan, F., Gerhold, M. D., Misra, V., & Vo-Dinh, T. (2010). Methodologies for Developing Surface-Enhanced Raman Scattering (SERS) Substrates for Detection of Chemical and Biological Molecules. IEEE SENSORS JOURNAL, 10(3), 608–616. https://doi.org/10.1109/jsen.2009.2038634

Misra, V., Shrivastava, R., Chen, Z., & Mathur, G. (2010). Molecular memory devices including solid-state dielectric layers and related methods.

Lee, B., Kirkpatrick, C., Yang, X. Y., Jayanti, S., Suri, R., Roberts, J., & Misra, V. (2010). Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics. 2010 international electron devices meeting - technical digest. https://doi.org/10.1109/iedm.2010.5703401

Vo-Dinh, T., Dhawan, A., Norton, S. J., Khoury, C. G., Wang, H.-N., Misra, V., & Gerhold, M. D. (2010). Plasmonic Nanoparticles and Nanowires: Design, Fabrication and Application in Sensing. JOURNAL OF PHYSICAL CHEMISTRY C, 114(16), 7480–7488. https://doi.org/10.1021/jp911355q

Novak, S., Lee, B., Yang, X., & Misra, V. (2010). Platinum Nanoparticles Grown by Atomic Layer Deposition for Charge Storage Memory Applications. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(6), H589–H592. https://doi.org/10.1149/1.3365031

Jayanti, S., Yang, X., Lichtenwalner, D. J., & Misra, V. (2010). Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures. APPLIED PHYSICS LETTERS, 96(9). https://doi.org/10.1063/1.3355547

Jayanti, S., Yang, X. Y., Suri, R., & Misra, V. (2010). Ultimate scalability of TaN metal floating gate with incorporation of High-K blocking dielectrics for flash memory applications. 2010 international electron devices meeting - technical digest. https://doi.org/10.1109/iedm.2010.5703301

Chen, Z., Sarkar, S., Biswas, N., & Misra, V. (2009). Atomic Layer Deposition of Hafnium Dioxide on TiN and Self-Assembled Monolayer Molecular Film. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(7), H561–H566. https://doi.org/10.1149/1.3125722

Alptekin, E., Ozturk, M. C., Misra, V., Cho, Y., Kim, Y., & Chopra, S. (2009). Erbium Silicide Formation on Si1-xCx Epitaxial Layers. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(5), H378–H383. https://doi.org/10.1149/1.3097189

Lichtenwalner, D. J., Misra, V., Dhar, S., Ryu, S.-H., & Agarwal, A. (2009). High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric. APPLIED PHYSICS LETTERS, 95(15). https://doi.org/10.1063/1.3251076

Alptekin, E., Kirkpatrick, C. J., Misra, V., & Ozturk, M. C. (2009). Platinum Germanosilicide Contacts Formed on Strained and Relaxed Si1-xGex Layers. IEEE TRANSACTIONS ON ELECTRON DEVICES, 56(6), 1220–1227. https://doi.org/10.1109/TED.2009.2018159

Alptekin, E., Ozturk, M. C., & Misra, V. (2009). Schottky Barrier Height of Erbium Silicide on Si1-xCx. IEEE ELECTRON DEVICE LETTERS, 30(9), 949–951. https://doi.org/10.1109/LED.2009.2026297

Yun, M., Mueller, D. W., Hossain, M., Misra, V., & Gangopadhyay, S. (2009). Sub-2 nm Size-Tunable High-Density Pt Nanoparticle Embedded Nonvolatile Memory. IEEE ELECTRON DEVICE LETTERS, 30(12), 1362–1364. https://doi.org/10.1109/LED.2009.2033618

Suresh, A., Novak, S., Wellenius, P., Misra, V., & Muth, J. F. (2009). Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric. APPLIED PHYSICS LETTERS, 94(12). https://doi.org/10.1063/1.3106629

Alptekin, E., Ozturk, M. C., & Misra, V. (2009). Tuning of the Platinum Silicide Schottky Barrier Height on n-Type Silicon by Sulfur Segregation. IEEE ELECTRON DEVICE LETTERS, 30(4), 331–333. https://doi.org/10.1109/LED.2009.2014182

Suri, R., Lee, B., Lichtenwalner, D. J., Biswas, N., & Misra, V. (2008). Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric. APPLIED PHYSICS LETTERS, 93(19). https://doi.org/10.1063/1.3007978

Luo, Y., & Misra, V. (2008). Fabrication of large area nano-rings for MRAM application. MICROELECTRONIC ENGINEERING, 85(7), 1555–1560. https://doi.org/10.1016/j.mee.2008.03.004

Suri, R., Lichtenwalner, D. J., & Misra, V. (2008). Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric. APPLIED PHYSICS LETTERS, 92(24). https://doi.org/10.1063/1.2949079

Luo, Y., Du, Y., & Misra, V. (2008). Large area nanorings fabricated using an atomic layer deposition Al(2)O(3) spacer for magnetic random access memory application. NANOTECHNOLOGY, 19(26). https://doi.org/10.1088/0957-4484/19/26/265301

Sarkar, S., Suresh, A., Myers, F. B., Muth, J. F., & Misra, V. (2008). Modulating indium gallium zinc oxide transistor characteristics with discrete redox states of molecules embedded in the gate dielectric. APPLIED PHYSICS LETTERS, 92(22). https://doi.org/10.1063/1.2918981

Chen, Z., Lee, B., Sarkar, S., Gowda, S., & Misra, V. (2007). A molecular memory device formed by HfO2 encapsulation of redox-active molecules. APPLIED PHYSICS LETTERS, 91(17). https://doi.org/10.1063/1.2800824

Lee, B., Biswas, N., Novak, S. R., & Misra, V. (2007). Characteristics of Ni/Gd FUSI for NMOS gate electrode applications. IEEE ELECTRON DEVICE LETTERS, 28(7), 555–557. https://doi.org/10.1109/LED.2007.897889

Misra, V., & Damiano, J., Jr. (2007). Crossbar array microelectronic electrochemical cells. Washington, DC: U.S. Patent and Trademark Office.

Bocian, D. F., Lindsey, J., Liu, Z., Yesseri, A. A., Misra, V., Zhao, Q., … Loewe, R. S. (2007). High temperature attachment of organic molecules to substrates. Washington, DC: U.S. Patent and Trademark Office.

Maitra, K., Frank, M. M., Narayanan, V., Misra, V., & Cartier, E. A. (2007). Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study. JOURNAL OF APPLIED PHYSICS, 102(11). https://doi.org/10.1063/1.2821712

Misra, V., Bocian, D., Kuhr, W., & Lindsey, J. (2007). In situ patterning of electrolyte for molecular information storage devices. Washington, DC: U.S. Patent and Trademark Office.

Ozturk, M., Misra, V., & Chopra, S. (2007). Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices. Washington, DC: U.S. Patent and Trademark Office.

Zhang, Z.-B., Misra, V., Bedair, S. M. A., & Ozturk, M. (2007). Optoelectonic devices having arrays of quantum-dot compound semiconductor superlattices therein. Washington, DC: U.S. Patent and Trademark Office.

Chopra, S., Ozturk, M. C., Misra, V., Ren, Z., & McNeil, L. E. (2007). The effects of nickel germanosilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon. APPLIED PHYSICS LETTERS, 91(14). https://doi.org/10.1063/1.2795346

Gowda, S., Mathur, G., & Misra, V. (2007). Valence band tunneling model for charge transfer of redox-active molecules attached to n- and p-silicon substrates. APPLIED PHYSICS LETTERS, 90(14). https://doi.org/10.1063/1.2720337

Chopra, S., Ozturk, M. C., Misra, V., McGuire, K., & McNeil, L. E. (2006). Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy. APPLIED PHYSICS LETTERS, 88(20). https://doi.org/10.1063/1.2205752

Chopra, S., Ozturk, M. C., Misra, V., McGuire, K., & McNeil, L. E. (2006). Critical thickness of heavily boron-doped silicon-germanium alloys. APPLIED PHYSICS LETTERS, 89(20). https://doi.org/10.1063/1.2374870

Chen, B., Biswas, N., & Misra, V. (2006). Electrical and physical analysis of MoTa alloy for gate electrode applications. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(5), G417–G419. https://doi.org/10.1149/1.2180710

Lichtenwalner, D. J., Jur, J. S., Jha, R., Inoue, N., Chen, B., Misra, V., & Kingon, A. I. (2006). High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(9), F210–F214. https://doi.org/10.1149/1.2218757

Gowda, S., Mathur, G., Li, Q., Surthi, S., & Misra, V. (2006). Hybrid silicon/molecular FETs: A study of the interaction of redox-active molecules with silicon MOSFETs. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 5(3), 258–264. https://doi.org/10.1109/TNANO.2006.874046

Chen, B., Jha, R., Lazar, H., Biswas, N., Lee, J., Lee, B., … Misra, V. (2006). Influence of oxygen diffusion through capping layers of low work function metal gate electrodes. IEEE ELECTRON DEVICE LETTERS, 27(4), 228–230. https://doi.org/10.1109/LED.2006.871184

Luo, Y., & Misra, V. (2006). Large-area long-range ordered anisotropic magnetic nanostructure fabrication by photolithography. NANOTECHNOLOGY, 17(19), 4909–4911. https://doi.org/10.1088/0957-4484/17/19/021

Chen, B., Jha, R., & Misra, V. (2006). Work function tuning via interface dipole by ultrathin reaction layers using AlTa and AlTaN alloys. IEEE ELECTRON DEVICE LETTERS, 27(9), 731–733. https://doi.org/10.1109/LED.2006.880643

Gowda, S., Mathur, G., Li, Q., Surthi, S., & Misra, V. (2005). Approach for investigating lateral conduction in self-assembled monolayers. APPLIED PHYSICS LETTERS, 87(26). https://doi.org/10.1063/1.2152112

Suh, Y. S., Lazar, H., Chen, B., Lee, J. H., & Misra, V. (2005). Electrical characteristics of HfO2 dielectrics with Ru metal gate electrodes. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 152(9), F138–F141. https://doi.org/10.1149/1.1992467

Biswas, N., Gurganus, J., Misra, V., Yang, Y., & Stemmer, S. (2005). Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application. APPLIED PHYSICS LETTERS, 86(2). https://doi.org/10.1063/1.1849850

Misra, V., Zhong, H., & Hong, S. (2005). High/low work function metal alloys for integrated circuit electrodes. Washington, DC: U.S. Patent and Trademark Office.

Misra, V., Gowda, S., & Mathur, G. (2005). Hybrid molecular memory devices and methods of use thereof. Washington, DC: U.S. Patent and Trademark Office.

Lin, Y. X., Ozturk, M. C., Chen, B., Rhee, S. J., Lee, J. C., & Misra, V. (2005). Impact of Ge on integration of HfO2 and metal gate electrodes on strained Si channels. APPLIED PHYSICS LETTERS, 87(7). https://doi.org/10.1063/1.2009809

Jha, R., Lee, J., Majhi, P., & Misra, V. (2005). Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applications. APPLIED PHYSICS LETTERS, 87(22). https://doi.org/10.1063/1.2136425

Methods of fabricating crossbar array microelectronic electrochemical cells. (2005). Washington, DC: U.S. Patent and Trademark Office.

Zhang, Z., Misra, V., Bedair, S. M. A., & Ozturk, M. (2005). Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein. Washington, DC: U.S. Patent and Trademark Office.

Chen, B., Suh, Y., Lee, J., Gurganus, J., Misra, V., & Cabral, C. (2005). Physical and electrical analysis of RuxYy alloys for gate electrode applications. APPLIED PHYSICS LETTERS, 86(5). https://doi.org/10.1063/1.1857093

Lee, C. K., Kim, J. Y., Hong, S. N., Zhong, H. C., Chen, B., & Misra, V. (2005). Properties of Ta-Mo alloy gate electrode for n-MOSFET. JOURNAL OF MATERIALS SCIENCE, 40(9-10), 2693–2695. https://doi.org/10.1007/s10853-005-2108-3

Mathur, G., Gowda, S., Li, Q. L., Surthi, S., Zhao, Q., & Misra, V. (2005). Properties of functionalized redox-active monolayers on thin silicon dioxide - A study of the. dependence of retention time on oxide thickness. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 4(2), 278–283. https://doi.org/10.1109/TNANO.2004.842056

Zhao, Q., Luo, Y., Surthi, S., Li, Q. L., Mathur, G., Gowda, S., … Misra, V. (2005). Redox-active monolayers on nano-scale silicon electrodes. NANOTECHNOLOGY, 16(2), 257–261. https://doi.org/10.1088/0957-4484/16/2/013

Liu, Z., Schmidt, I., Thamyongkit, P., Loewe, R. S., Syomin, D., Diers, J. R., … Bocian, D. F. (2005). Synthesis and Film-Forming Properties of Ethynylporphyrins. Chemistry of Materials, 17(14), 3728–3742. https://doi.org/10.1021/cm047858y

Biswas, N., Gurganus, J., & Misra, V. (2005). Work function tuning of nickel silicide by co-sputtering nickel and silicon. APPLIED PHYSICS LETTERS, 87(17). https://doi.org/10.1063/1.2115072

Jha, R., Gurganos, J., Kim, Y. H., Choi, R., Lee, J., & Misra, V. (2004). A capacitance-based methodology for work function extraction of metals on high-kappa. IEEE ELECTRON DEVICE LETTERS, 25(6), 420–423. https://doi.org/10.1109/LED.2004.829032

Suh, Y. S., Heuss, G., & Misra, V. (2004). Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 22(1), 175–179. https://doi.org/10.1116/1.1640398

Misra, V., Bocian, D., Kuhr, W., & Lindsey, J. (2004). Method and system for molecular charge storage field effect transistor. Washington, DC: U.S. Patent and Trademark Office.

Zhang, Z., Misra, V., Bedair, S. M. A., & Ozturk, M. (2004). Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates. Washington, DC: U.S. Patent and Trademark Office.

Li, Q. L., Mathur, G., Gowda, S., Surthi, S., Zhao, Q., Yu, L. H., … Misra, V. (2004). Multibit memory using self-assembly of mixed ferrocene/porphyrin monolayers on silicon. ADVANCED MATERIALS, 16(2), 133-+. https://doi.org/10.1002/adma.200305680

Li, Q. L., Surthi, S., Mathur, G., Gowda, S., Zhao, Q., Sorenson, T. A., … Misra, V. (2004). Multiple-bit storage properties of porphyrin monolayers on SiO2. APPLIED PHYSICS LETTERS, 85(10), 1829–1831. https://doi.org/10.1063/1.1782254

Carcel, C. M., Laha, J. K., Loewe, R. S., Thamyongkit, P., Schweikart, K. H., Misra, V., … Lindsey, J. S. (2004). Porphyrin architectures tailored for studies of molecular information storage. JOURNAL OF ORGANIC CHEMISTRY, 69(20), 6739–6750. https://doi.org/10.1021/jo0498260

Muthukumaran, K., Loewe, R. S., Ambroise, A., Tamaru, S. I., Li, Q. L., Mathur, G., … Lindsey, J. S. (2004). Porphyrins bearing arylphosphonic acid tethers for attachment to oxide surfaces. JOURNAL OF ORGANIC CHEMISTRY, 69(5), 1444–1452. https://doi.org/10.1021/jo034945l

Loewe, R. S., Ambroise, A., Muthukumaran, K., Padmaja, K., Lysenko, A. B., Mathur, G., … Lindsey, J. S. (2004). Porphyrins bearing mono or tripodal benzylphosphonic acid tethers for attachment to oxide surfaces. JOURNAL OF ORGANIC CHEMISTRY, 69(5), 1453–1460. https://doi.org/10.1021/jo034946d

Kim, Y. H., Choi, R., Jha, R., Lee, J. H., Misra, V., & Lee, J. C. (2004). Reliability of high-k dielectrics and its dependence on gate electrode and interfacial high-k bi-layer structure. MICROELECTRONICS RELIABILITY, Vol. 44, pp. 1513–1518. https://doi.org/10.1016/j.microrel.2004.07.049

Chen, Z. Q., Misra, V., Haggerty, R. P., & Stemmer, S. (2004, August). Stability of Ru- and Ta-based metal gate electrodes in contact with dielectrics for Si-CMOS. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 241, pp. 2253–2267. https://doi.org/10.1002/pssb.200404933

Liu, Z. M., Yasseri, A. A., Loewe, R. S., Lysenko, A. B., Malinovskii, V. L., Zhao, Q., … Bocian, D. F. (2004). Synthesis of porphyrins bearing hydrocarbon tethers and facile covalent attachment to Si(100). JOURNAL OF ORGANIC CHEMISTRY, 69(17), 5568–5577. https://doi.org/10.1021/jo049439q

Maitra, K., & Misra, V. (2003). A simulation study to evaluate the feasibility of midgap workfunction metal gates in 25 nm bulk CMOS. IEEE ELECTRON DEVICE LETTERS, 24(11), 707–709. https://doi.org/10.1109/LED.2003.819267

Suh, Y. S., Heuss, G. P., Lee, J. H., & Misra, V. (2003). Effect of the composition on the electrical properties of TaSixNy metal gate electrodes. IEEE ELECTRON DEVICE LETTERS, 24(7), 439–441. https://doi.org/10.1109/LED.2003.814009

Li, Q. L., Surthi, S., Mathur, G., Gowda, S., Misra, V., Sorenson, T. A., … Bocian, D. F. (2003). Electrical characterization of redox-active molecular monolayers on SiO2 for memory applications. APPLIED PHYSICS LETTERS, 83(1), 198–200. https://doi.org/10.1063/1.1584088

Suh, Y. S., Heuss, G. P., Misra, V., Park, D. G., & Limb, K. Y. (2003). Thermal stability of TaSixNy films deposited by reactive sputtering on SiO2. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(5), F79–F82. https://doi.org/10.1149/1.1562599

Li, Q. L., Mathur, G., Homsi, M., Surthi, S., Misra, V., Malinovskii, V., … Kuhr, W. G. (2002). Capacitance and conductance characterization of ferrocene-containing self-assembled monolayers on silicon surfaces for memory applications. APPLIED PHYSICS LETTERS, 81(8), 1494–1496. https://doi.org/10.1063/1.1500781

Suh, Y. S., Heuss, G. P., & Misra, V. (2002). Electrical characteristics of TaSixNy/SO2/Si structures by Fowler-Nordheim current analysis. APPLIED PHYSICS LETTERS, 80(8), 1403–1405. https://doi.org/10.1063/1.1453478

Misra, V., Zhong, H. C., & Lazar, H. (2002). Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS. IEEE ELECTRON DEVICE LETTERS, 23(6), 354–356. https://doi.org/10.1109/LED.2002.1004233

Misra, V., Lucovsky, G., & Parsons, G. N. (2002). Issues in high-kappa gate stack interfaces. MRS BULLETIN, 27(3), 212–216. https://doi.org/10.1557/mrs2002.73

Lazar, H. R., Misra, V., Johnson, R. S., & Lucovsky, G. (2001). Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices. APPLIED PHYSICS LETTERS, 79(7), 973–975. https://doi.org/10.1063/1.1392973

Zhong, H. C., Heuss, G., Misra, V., Luan, H. F., Lee, C. H., & Kwong, D. L. (2001). Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics. APPLIED PHYSICS LETTERS, 78(8), 1134–1136. https://doi.org/10.1063/1.1347402

Zhong, H. C., Heuss, G., Suh, Y. S., Misra, V., & Hong, S. N. (2001, December). Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics. JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 1493–1498. https://doi.org/10.1007/s11664-001-0164-2

Misra, V., Kulkarni, M., & Zhong, H. C. (2001, December). N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics. JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 1499–1505. https://doi.org/10.1007/s11664-001-0165-1

Weintraub, C. E., Vogel, E., Hauser, JR, Yang, N., Misra, V., Wortman, J. J., … Masson, P. (2001). Study of low-frequency charge pumping on thin stacked dielectrics. IEEE TRANSACTIONS ON ELECTRON DEVICES, 48(12), 2754–2762. https://doi.org/10.1109/16.974700

Misra, V., Heuss, G. P., & Zhong, H. (2001). Use of metal-oxide-semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2. Applied Physics Letters, 78(26), 4166–4168. https://doi.org/10.1063/1.1380240

Zhong, H. C., Heuss, G., & Misra, V. (2000). Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS. IEEE ELECTRON DEVICE LETTERS, 21(12), 593–595. https://doi.org/10.1109/55.887476

Ban, I., Ozturk, M. C., Misra, V., Wortman, J. J., Venables, D., & Maher, D. M. (1999). A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1189–1196. https://doi.org/10.1149/1.1391744

Lucovsky, G., Wu, Y., Niimi, H., Misra, V., & Phillips, J. C. (1999). Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1806–1812.

Lucovsky, G., Wu, Y., Niimi, H., Misra, V., & Phillips, J. C. (1999). Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics. APPLIED PHYSICS LETTERS, 74(14), 2005–2007. https://doi.org/10.1063/1.123728

Misra, V., Lazar, H., Wang, Z., Wu, Y., Niimi, H., Lucovsky, G., … Hauser, J. R. (1999). Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836–1839.

Morfouli, P., Ghibaudo, G., Vogel, E. M., Hill, W. L., Misra, V., McLarty, P. K., & Wortman, J. J. (1997). Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition. SOLID-STATE ELECTRONICS, 41(7), 1051–1055. https://doi.org/10.1016/S0038-1101(97)00019-1