Wei Guo

Atomically Thin MoS₂ Narrowband and Broadband Light Superabsorbers

Huang, L., Li, G., Gurarslan, A., Yu, Y., Kirste, R., Guo, W., … Cao, L. (2016, August 2). ACS Nano, Vol. 10, pp. 7493–7499.

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

Alden, D., Guo, W., Kirste, R., Kaess, F., Bryan, I., Troha, T., … Sitar, Z. (2016, June 27). Applied Physics Letters, Vol. 108, p. 261106.

UV second harmonic generation in AlN waveguides with modal phase matching

Troha, T., Rigler, M., Alden, D., Bryan, I., Guo, W., Kirste, R., … Zgonik, M. (2016, May 20). Optical Materials Express.

KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

Guo, W., Kirste, R., Bryan, I., Bryan, Z., Hussey, L., Reddy, P., … Sitar, Z. (2015, February 23). Applied Physics Letters, Vol. 106, p. 082110.

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., … Collazo, R. (2014, December 1). Applied Physics Letters, Vol. 105, p. 222101.

Growth and characterization of Al_xGa_1−xN lateral polarity structures

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2014, November 18). Physica Status Solidi (a), Vol. 212, pp. 1039–1042.

Properties of AlN based lateral polarity structures

Kirste, R., Mita, S., Hoffmann, M. P., Hussey, L., Guo, W., Bryan, I., … Sitar, Z. (2014, January 20). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 11, pp. 261–264.

Sapphire decomposition and inversion domains in N-polar aluminum nitride

Hussey, L., White, R. M., Kirste, R., Mita, S., Bryan, I., Guo, W., … Sitar, Z. (2014, January 20). Applied Physics Letters, Vol. 104.

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

Guo, W., Bryan, Z., Xie, J., Kirste, R., Mita, S., Bryan, I., … Sitar, Z. (2014, March 14). Journal of Applied Physics, Vol. 115.

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Reddy, P., Bryan, I., Bryan, Z., Guo, W., Hussey, L., Collazo, R., & Sitar, Z. (2014, September 22). Journal of Applied Physics, Vol. 116.

Antireflection effects at nanostructured material interfaces and the suppression of thin-film interference

Yang, Q., Zhang, X. A., Bagal, A., Guo, W., & Chang, C.-H. (2013, May 15). Nanotechnology.

Comparative study of etching high crystalline quality AlN and GaN

Guo, W., Xie, J., Akouala, C., Mita, S., Rice, A., Tweedie, J., … Sitar, Z. (2013, January 4). Journal of Crystal Growth, Vol. 366, pp. 20–25.

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

Xie, J., Mita, S., Bryan, Z., Guo, W., Hussey, L., Moody, B., … Sitar, Z. (2013, April 29). Applied Physics Letters, Vol. 102.

Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition

Hussey, L., Mita, S., Xie, J., Guo, W., Akouala, C.-R., Rajan, J., … Sitar, Z. (2012, December 1). Journal of Applied Physics, Vol. 112.

Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes

Guo, W., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., Collazo, R., & Sitar, Z. Journal of Applied Physics, 117(11).