Wei Guo

Works (15)

Updated: July 5th, 2023 15:45

2016 journal article

Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers

ACS NANO, 10(8), 7493–7499.

By: L. Huang n, G. Li n, A. Gurarslan n, Y. Yu n, R. Kirste n, W. Guo n, J. Zhao n, R. Collazo n  ...

Contributors: L. Huang n, G. Li n, A. Gurarslan n, Y. Yu n, R. Kirste n, W. Guo n, J. Zhao n, R. Collazo n  ...

author keywords: MoS2; two-dimensional materials; light absorption; leaky mode; resonant photonics
topics (OpenAlex): 2D Materials and Applications; Plasmonic and Surface Plasmon Research; Perovskite Materials and Applications
TL;DR: A combined theoretical and experimental effort to enable strong light absorption in atomically thin MoS2 films by integrating the films with resonant photonic structures that are deterministically designed using a unique reverse design approach based on leaky mode coupling. (via Semantic Scholar)
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7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

APPLIED PHYSICS LETTERS, 108(26).

By: D. Alden n, W. Guo n, R. Kirste  n, F. Kaess n, I. Bryan n, T. Troha  n, A. Bagal n, P. Reddy n  ...

Contributors: D. Alden n, W. Guo n, R. Kirste  n, F. Kaess n, I. Bryan n, T. Troha  n, A. Bagal n, P. Reddy n  ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Acoustic Wave Resonator Technologies
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2016 journal article

UV second harmonic generation in AlN waveguides with modal phase matching

OPTICAL MATERIALS EXPRESS, 6(6), 2014–2023.

By: T. Troha *, M. Rigler *, D. Alden n, I. Bryan n, W. Guo n, R. Kirste *, S. Mita *, M. Gerhold* ...

topics (OpenAlex): Advanced Fiber Laser Technologies; GaN-based semiconductor devices and materials; Photonic and Optical Devices
Source: Web Of Science
Added: August 6, 2018

2015 article

Growth and characterization of AlxGa1-xN lateral polarity structures

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2015, May). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, pp. 1039–1042.

By: M. Hoffmann n, R. Kirste n, S. Mita *, W. Guo n, J. Tweedie n, M. Bobea n, I. Bryan n, Z. Bryan n ...

author keywords: AlGaN; growth; lateral polarity structures; optical phase matching
topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2015 journal article

KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

APPLIED PHYSICS LETTERS, 106(8).

By: W. Guo n, R. Kirste n, I. Bryan n, Z. Bryan n, L. Hussey n, P. Reddy n , J. Tweedie, R. Collazo n , Z. Sitar n

Contributors: W. Guo n, R. Kirste n, I. Bryan n, Z. Bryan n, L. Hussey n, P. Reddy n , J. Tweedie, R. Collazo n , Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2014 journal article

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

APPLIED PHYSICS LETTERS, 105(22).

By: Z. Bryan n, I. Bryan n, B. Gaddy n, P. Reddy n , L. Hussey n, M. Bobea n, W. Guo n, M. Hoffmann n ...

Contributors: Z. Bryan n, I. Bryan n, B. Gaddy n, P. Reddy n , L. Hussey n, M. Bobea n, W. Guo n, M. Hoffmann n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2014 article

Properties of AlN based lateral polarity structures

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, Vol. 11, pp. 261–264.

By: R. Kirste n, S. Mita *, M. Hoffmann n, L. Hussey n, W. Guo n, I. Bryan n, Z. Bryan n, J. Tweedie n ...

author keywords: lateral polarity structures; quasi-phase matching; N-polar; columnar growth
topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 journal article

Sapphire decomposition and inversion domains in N-polar aluminum nitride

APPLIED PHYSICS LETTERS, 104(3).

By: L. Hussey n, R. White n, R. Kirste n, S. Mita *, I. Bryan n, W. Guo n, K. Osterman n, B. Haidet n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Metal and Thin Film Mechanics
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 journal article

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

JOURNAL OF APPLIED PHYSICS, 115(10).

By: W. Guo n, Z. Bryan n, J. Xie *, R. Kirste n, S. Mita *, I. Bryan n, L. Hussey n, M. Bobea n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Semiconductor Quantum Structures and Devices
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UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 journal article

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

JOURNAL OF APPLIED PHYSICS, 116(12).

By: P. Reddy n , I. Bryan n, Z. Bryan n, W. Guo n, L. Hussey n, R. Collazo n , Z. Sitar n

Contributors: P. Reddy n , I. Bryan n, Z. Bryan n, W. Guo n, L. Hussey n, R. Collazo n , Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Photocathodes and Microchannel Plates
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2013 journal article

Antireflection effects at nanostructured material interfaces and the suppression of thin-film interference

NANOTECHNOLOGY, 24(23).

By: Q. Yang n, X. Zhang  n, A. Bagal n, W. Guo n & C. Chang n

MeSH headings : Animals; Nanostructures / chemistry; Nanostructures / ultrastructure; Optical Phenomena; Polymers / chemistry; Silicon / chemistry
topics (OpenAlex): Optical Coatings and Gratings; Photonic Crystals and Applications; Thin-Film Transistor Technologies
TL;DR: This work describes the use of interfacial nanostructures to eliminate interference effects in thin films using the same principle inspired by moth-eye structures, and creates an effective medium where the index is gradually varying between the neighboring materials. (via Semantic Scholar)
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Source: Web Of Science
Added: August 6, 2018

2013 journal article

Comparative study of etching high crystalline quality AlN and GaN

JOURNAL OF CRYSTAL GROWTH, 366, 20–25.

By: W. Guo n, J. Xie *, C. Akouala n, S. Mita *, A. Rice n, J. Tweedie n, I. Bryan n, R. Collazo n , Z. Sitar n

author keywords: Etching; Surfaces; Nitrides; Semiconducting III-V materials; Light emitting diodes
topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 journal article

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

APPLIED PHYSICS LETTERS, 102(17).

By: J. Xie *, S. Mita *, Z. Bryan n, W. Guo n, L. Hussey n, B. Moody *, R. Schlesser*, R. Kirste n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2012 journal article

Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 112(11).

By: L. Hussey n, S. Mita *, J. Xie *, W. Guo n, C. Akouala n, J. Rajan n, I. Bryan n, R. Collazo n , Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

journal article

Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes

Guo, W., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., Collazo, R., & Sitar, Z. Journal of Applied Physics, 117(11).

By: W. Guo, R. Kirste, Z. Bryan, I. Bryan, M. Gerhold, R. Collazo , Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

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