Works (15)
Updated: July 5th, 2023 15:45
2016 journal article
Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers
ACS NANO, 10(8), 7493–7499.
Contributors: L. Huang n, G. Li n, A. Gurarslan n, Y. Yu n, R. Kirste n, n, J. Zhao n, R. Collazo n
author keywords: MoS2; two-dimensional materials; light absorption; leaky mode; resonant photonics
TL;DR:
A combined theoretical and experimental effort to enable strong light absorption in atomically thin MoS2 films by integrating the films with resonant photonic structures that are deterministically designed using a unique reverse design approach based on leaky mode coupling.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018
2016 journal article
Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications
APPLIED PHYSICS LETTERS, 108(26).
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2016 journal article
UV second harmonic generation in AlN waveguides with modal phase matching
OPTICAL MATERIALS EXPRESS, 6(6), 2014–2023.
Source: Web Of Science
Added: August 6, 2018
2015 article
Growth and characterization of AlxGa1-xN lateral polarity structures
Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2015, May). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, pp. 1039–1042.
author keywords: AlGaN; growth; lateral polarity structures; optical phase matching
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2015 journal article
KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
APPLIED PHYSICS LETTERS, 106(8).
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2014 journal article
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
APPLIED PHYSICS LETTERS, 105(22).
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2014 article
Properties of AlN based lateral polarity structures
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, Vol. 11, pp. 261–264.
author keywords: lateral polarity structures; quasi-phase matching; N-polar; columnar growth
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2014 journal article
Sapphire decomposition and inversion domains in N-polar aluminum nitride
APPLIED PHYSICS LETTERS, 104(3).
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2014 journal article
Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates
JOURNAL OF APPLIED PHYSICS, 115(10).
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2014 journal article
The effect of polarity and surface states on the Fermi level at III-nitride surfaces
JOURNAL OF APPLIED PHYSICS, 116(12).
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2013 journal article
Antireflection effects at nanostructured material interfaces and the suppression of thin-film interference
NANOTECHNOLOGY, 24(23).
MeSH headings : Animals; Nanostructures / chemistry; Nanostructures / ultrastructure; Optical Phenomena; Polymers / chemistry; Silicon / chemistry
TL;DR:
This work describes the use of interfacial nanostructures to eliminate interference effects in thin films using the same principle inspired by moth-eye structures, and creates an effective medium where the index is gradually varying between the neighboring materials.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2013 journal article
Comparative study of etching high crystalline quality AlN and GaN
JOURNAL OF CRYSTAL GROWTH, 366, 20–25.
author keywords: Etching; Surfaces; Nitrides; Semiconducting III-V materials; Light emitting diodes
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2013 journal article
Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
APPLIED PHYSICS LETTERS, 102(17).
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2012 journal article
Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition
JOURNAL OF APPLIED PHYSICS, 112(11).
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
journal article
Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes
Guo, W., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., Collazo, R., & Sitar, Z. Journal of Applied Physics, 117(11).
Source: NC State University Libraries
Added: August 6, 2018
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