Wei Guo

Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers

ACS NANO, 10(8), 7493–7499.

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

APPLIED PHYSICS LETTERS, 108(26).

UV second harmonic generation in AlN waveguides with modal phase matching

OPTICAL MATERIALS EXPRESS, 6(6), 2014–2023.

Growth and characterization of AlxGa1-xN lateral polarity structures

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2015, May). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, pp. 1039–1042.

KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

APPLIED PHYSICS LETTERS, 106(8).

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

APPLIED PHYSICS LETTERS, 105(22).

Properties of AlN based lateral polarity structures

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, Vol. 11, pp. 261–264.

Sapphire decomposition and inversion domains in N-polar aluminum nitride

APPLIED PHYSICS LETTERS, 104(3).

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

JOURNAL OF APPLIED PHYSICS, 115(10).

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

JOURNAL OF APPLIED PHYSICS, 116(12).

Antireflection effects at nanostructured material interfaces and the suppression of thin-film interference

NANOTECHNOLOGY, 24(23).

Comparative study of etching high crystalline quality AlN and GaN

JOURNAL OF CRYSTAL GROWTH, 366, 20–25.

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

APPLIED PHYSICS LETTERS, 102(17).

Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 112(11).

Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes

Guo, W., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., Collazo, R., & Sitar, Z. Journal of Applied Physics, 117(11).