Works (12)

2017 journal article

On developing one-chip integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)

IEEE Transactions on Industrial Electronics, 64(10), 8206–8212.

By: W. Sung & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2017 journal article

Primary cilia are sensors of electrical field stimulation to induce osteogenesis of human adipose-derived stem cells

FASEB Journal, 31(1), 346–355.

By: S. Cai, J. Bodle, P. Mathieu, A. Amos, M. Hamouda, S. Bernacki, G. McCarty, E. Loboa

Source: NC State University Libraries
Added: August 6, 2018

2016 journal article

Area-efficient bevel-edge termination techniques for SiC high-voltage devices

IEEE Transactions on Electron Devices, 63(4), 1630–1636.

By: W. Sung, B. Baliga & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Bevel junction termination extension-A new edge termination technique for 4H-SiC high-voltage devices

IEEE Electron Device Letters, 36(6), 594–596.

By: W. Sung, A. Huang & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor

Proceedings of the international symposium on power semiconductor, 257–260.

By: W. Sung, A. Huang, B. Baliga, I. Ji, H. Ke & D. Hopkins

Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

Turn-on capability of 22 kV SiC Fmitter Turn-off (ETO) Thyristor

WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 192–195.

By: L. Liang, A. Huang, W. Sung, M. Lee, X. Song, C. Peng, L. Cheng, J. Palmour, C. Scozzie

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

A Comparative study of gate structures for 9.4-kV4H-SiC normally on vertical JFETs

IEEE Transactions on Electron Devices, 59(9), 2417–2423.

By: W. Sung, E. Van Brunt, B. Baliga & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

A Novel 4H-SiC fault isolation device with improved trade-off between on-state voltage drop and short circuit SOA

Silicon carbide and related materials 2011, pts 1 and 2, 717-720, 1045–1048.

By: W. Sung, B. Baliga & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

A new edge termination technique for high-voltage devices in 4H-SiC-multiple-floating-zone junction termination extension

IEEE Electron Device Letters, 32(7), 880–882.

By: W. Sung, E. Van Brunt, B. Baliga & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2010 conference paper

A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop

Proceedings of the international symposium on power semiconductor, 217–220.

By: W. Sung, A. Huang & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2009 conference paper

Design and investigation of frequency capability of 15kV 4H-SiC IGBT

Proceedings of the international symposium on power semiconductor, 271–274.

By: W. Sung, J. Wang, A. Huang & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Smart grid technologies

IEEE Industrial Electronics Magazine, 3(2), 16–23.

Source: NC State University Libraries
Added: August 6, 2018