2012 conference paper
A Novel 4H-SiC fault isolation device with improved trade-off between on-state voltage drop and short circuit SOA
Silicon carbide and related materials 2011, pts 1 and 2, 717-720, 1045–1048.
2010 conference paper
A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop
Proceedings of the international symposium on power semiconductor, 217–220.