Works (15)

Updated: May 7th, 2024 09:10

2022 article

Comparative Study of 6.5 kV 4H-SiC Discrete Packaged MOSFET, JBSFET, and Co-Pack (MOSFET and JBS Diode)

2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), pp. 249–252.

By: N. Yun*, J. Lynch*, A. Morgan*, D. Xing*, M. Jin*, J. Qianb, M. Kang*, V. Amarasinghe* ...

author keywords: Silicon Carbide; 4H-SiC; MOSFET; JBSFET; Co-Package; Medium Voltage; Double Pulse Test (DPT); Switching; Short Circuit Capability; Stress; Body Diode Degradation
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: September 26, 2022

2022 journal article

SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 10, 129–138.

By: T. Liu*, H. Zhang*, S. Isukapati*, E. Ashik n, A. Morgan*, B. Lee n, W. Sung*, A. Fayed*, M. White*, A. Agarwal*

author keywords: Silicon carbide; MOSFET; Integrated circuits; Semiconductor device modeling; SPICE; Integrated circuit modeling; Silicon; SiC MOSFETs; CMOS circuits; smart power IC; SPICE modeling; trapped interface charges
Source: Web Of Science
Added: March 14, 2022

2021 article

Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 361–365.

By: N. Yun*, J. Lynch*, S. DeBoer*, A. Morgan*, W. Sung*, D. Xing*, M. Kang*, A. Agarwal* ...

author keywords: Silicon Carbide; 4H-SiC; MOSFET; Breakdown Voltage; High Voltage; Edge Termination; Implant Straggle; Fabrication; 6-inch Foundry; Package; Short Circuit Capability
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: May 10, 2022

2017 journal article

On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 64(10), 8206–8212.

By: W. Sung* & B. Baliga n

author keywords: 4H-SiC; JBS diode; JBSFET; MOSFET; ohmic contact; power converter; schottky; silicon carbide
TL;DR: The proposed single chip solution of MOSFET/JBS diode functionalities eliminates the parasitic inductance between separately packaged devices allowing a higher frequency operation in a power converter. (via Semantic Scholar)
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2017 journal article

Primary cilia are sensors of electrical field stimulation to induce osteogenesis of human adipose-derived stem cells

FASEB JOURNAL, 31(1), 346–355.

By: S. Cai n, J. Bodle n, P. Mathieu n, A. Amos n, M. Hamouda n, S. Bernacki n, G. McCarty n, E. Loboa n

author keywords: polycystin-1; intraflagellar protein-88; siRNA knockdown; signal transduction; calcium oscillations
MeSH headings : Adipose Tissue / cytology; Biomarkers; Calcium / metabolism; Cell Survival; Cells, Cultured; Cilia / physiology; Electric Stimulation; Gene Expression Regulation / physiology; Humans; Osteogenesis / physiology; RNA Interference; RNA, Small Interfering; Stem Cells / physiology
TL;DR: It is reported for the first time that the primary ciliumacts as a crucial sensor for electrical field stimulation (EFS)–enhanced osteogenic response in osteoprogenitor cells and that primary cilia seem to functionally modulate effects of EFS‐induced cellular calciumoscillations. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

2016 journal article

Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices

IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(4), 1630–1636.

By: W. Sung n, B. Baliga n & A. Huang n

author keywords: 4H-SiC; bevel termination; dicing; edge termination; high voltage; junction termination extension (JTE); silicon carbide
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2015 journal article

Bevel Junction Termination Extension-A New Edge Termination Technique for 4H-SiC High-Voltage Devices

IEEE ELECTRON DEVICE LETTERS, 36(6), 594–596.

By: W. Sung n, A. Huang n & B. Baliga n

author keywords: Edge termination; bevel dicing; junction termination extension (JTE); PiN diode; 4H-SiC
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2015 conference paper

The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 257–260.

By: W. Sung n, A. Huang n, B. Baliga n, I. Ji n, H. Ke n & D. Hopkins n

Event: 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: NC State University Libraries, NC State University Libraries, ORCID, Crossref
Added: August 6, 2018

2015 conference paper

Turn-on capability of 22 kV SiC Fmitter Turn-off (ETO) Thyristor

WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 192–195.

By: L. Liang n, A. Huang n, W. Sung n, M. Lee n, X. Song n, C. Peng n, L. Cheng*, J. Palmour*, C. Scozzie

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

A Comparative Study of Gate Structures for 9.4-kV4H-SiC Normally On Vertical JFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(9), 2417–2423.

By: W. Sung n, E. Van Brunt n, B. Baliga n & A. Huang n

author keywords: High voltage; JFET; normally on; silicon carbide; 4H-SiC
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2012 article

A Novel 4H-SiC Fault Isolation Device with Improved Trade-off between On-state Voltage Drop and Short Circuit SOA

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, Vol. 717-720, pp. 1045–1048.

By: W. Sung n, B. Baliga n & A. Huang n

author keywords: 4H-SiC; fault isolation device; power distribution system; field controlled diode; field controlled thyristor; gating technique; cascode circuit; short circuit safe operating area
Source: Web Of Science
Added: August 6, 2018

2011 journal article

A New Edge Termination Technique for High-Voltage Devices in 4H-SiC-Multiple-Floating-Zone Junction Termination Extension

IEEE ELECTRON DEVICE LETTERS, 32(7), 880–882.

By: W. Sung n, E. Van Brunt n, B. Baliga n & A. Huang n

author keywords: Edge termination; junction termination extension (JTE); PiN diode; 4H-SiC
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2010 conference paper

A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop

Proceedings of the international symposium on power semiconductor, 217–220.

By: W. Sung, A. Huang & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2009 article

Design and investigation of frequency capability of 15kV 4H-SiC IGBT

2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, pp. 271–274.

By: W. Sung n, J. Wang n, A. Huang n & B. Baliga n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Smart Grid Technologies

IEEE INDUSTRIAL ELECTRONICS MAGAZINE, 3(2), 16–23.

By: J. Wang n, A. Huang n, W. Sung n, Y. Liu n & B. Baliga

TL;DR: Development of 15-kV SiC IGBTs and their impact on utility applications is discussed, and the need for power semiconductor devices with high-voltage, high- frequency, and high-temperature operation capability is growing. (via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

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