Woongje Sung

Comparative Study of 6.5 kV 4H-SiC Discrete Packaged MOSFET, JBSFET, and Co-Pack (MOSFET and JBS Diode)

2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), pp. 249–252.

SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 10, 129–138.

Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 361–365.

On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 64(10), 8206–8212.

Primary cilia are sensors of electrical field stimulation to induce osteogenesis of human adipose-derived stem cells

FASEB JOURNAL, 31(1), 346–355.

Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices

IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(4), 1630–1636.

Bevel Junction Termination Extension-A New Edge Termination Technique for 4H-SiC High-Voltage Devices

IEEE ELECTRON DEVICE LETTERS, 36(6), 594–596.

The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 257–260.

Turn-on capability of 22 kV SiC Fmitter Turn-off (ETO) Thyristor

WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 192–195.

A Comparative Study of Gate Structures for 9.4-kV4H-SiC Normally On Vertical JFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(9), 2417–2423.

A Novel 4H-SiC Fault Isolation Device with Improved Trade-off between On-state Voltage Drop and Short Circuit SOA

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, Vol. 717-720, pp. 1045–1048.

A New Edge Termination Technique for High-Voltage Devices in 4H-SiC-Multiple-Floating-Zone Junction Termination Extension

IEEE ELECTRON DEVICE LETTERS, 32(7), 880–882.

A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop

Proceedings of the international symposium on power semiconductor, 217–220.

Design and investigation of frequency capability of 15kV 4H-SiC IGBT

2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, pp. 271–274.

Smart Grid Technologies

IEEE INDUSTRIAL ELECTRONICS MAGAZINE, 3(2), 16–23.