Works (15)
Updated: December 18th, 2023 07:49
2022 article
Comparative Study of 6.5 kV 4H-SiC Discrete Packaged MOSFET, JBSFET, and Co-Pack (MOSFET and JBS Diode)
2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), pp. 249–252.
author keywords: Silicon Carbide; 4H-SiC; MOSFET; JBSFET; Co-Package; Medium Voltage; Double Pulse Test (DPT); Switching; Short Circuit Capability; Stress; Body Diode Degradation
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: September 26, 2022
2022 journal article
SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 10, 129–138.
author keywords: Silicon carbide; MOSFET; Integrated circuits; Semiconductor device modeling; SPICE; Integrated circuit modeling; Silicon; SiC MOSFETs; CMOS circuits; smart power IC; SPICE modeling; trapped interface charges
ieeexplore.ieee.org (publisher PDF)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: March 14, 2022
2021 article
Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry
2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 361–365.
author keywords: Silicon Carbide; 4H-SiC; MOSFET; Breakdown Voltage; High Voltage; Edge Termination; Implant Straggle; Fabrication; 6-inch Foundry; Package; Short Circuit Capability
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: May 10, 2022
2017 journal article
On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 64(10), 8206–8212.
author keywords: 4H-SiC; JBS diode; JBSFET; MOSFET; ohmic contact; power converter; schottky; silicon carbide
TL;DR:
The proposed single chip solution of MOSFET/JBS diode functionalities eliminates the parasitic inductance between separately packaged devices allowing a higher frequency operation in a power converter.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2017 journal article
Primary cilia are sensors of electrical field stimulation to induce osteogenesis of human adipose-derived stem cells
FASEB JOURNAL, 31(1), 346–355.
author keywords: polycystin-1; intraflagellar protein-88; siRNA knockdown; signal transduction; calcium oscillations
MeSH headings : Adipose Tissue / cytology; Biomarkers; Calcium / metabolism; Cell Survival; Cells, Cultured; Cilia / physiology; Electric Stimulation; Gene Expression Regulation / physiology; Humans; Osteogenesis / physiology; RNA Interference; RNA, Small Interfering; Stem Cells / physiology
TL;DR:
It is reported for the first time that the primary ciliumacts as a crucial sensor for electrical field stimulation (EFS)–enhanced osteogenic response in osteoprogenitor cells and that primary cilia seem to functionally modulate effects of EFS‐induced cellular calciumoscillations.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
3. Good Health and Well-being
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2016 journal article
Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices
IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(4), 1630–1636.
author keywords: 4H-SiC; bevel termination; dicing; edge termination; high voltage; junction termination extension (JTE); silicon carbide
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2015 journal article
Bevel Junction Termination Extension-A New Edge Termination Technique for 4H-SiC High-Voltage Devices
IEEE ELECTRON DEVICE LETTERS, 36(6), 594–596.
author keywords: Edge termination; bevel dicing; junction termination extension (JTE); PiN diode; 4H-SiC
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2015 conference paper
The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 257–260.
Event: 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: NC State University Libraries, NC State University Libraries, ORCID, Crossref
Added: August 6, 2018
2015 conference paper
Turn-on capability of 22 kV SiC Fmitter Turn-off (ETO) Thyristor
WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 192–195.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018
2012 journal article
A Comparative Study of Gate Structures for 9.4-kV4H-SiC Normally On Vertical JFETs
IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(9), 2417–2423.
author keywords: High voltage; JFET; normally on; silicon carbide; 4H-SiC
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2012 article
A Novel 4H-SiC Fault Isolation Device with Improved Trade-off between On-state Voltage Drop and Short Circuit SOA
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, Vol. 717-720, pp. 1045–1048.
author keywords: 4H-SiC; fault isolation device; power distribution system; field controlled diode; field controlled thyristor; gating technique; cascode circuit; short circuit safe operating area
Source: Web Of Science
Added: August 6, 2018
2011 journal article
A New Edge Termination Technique for High-Voltage Devices in 4H-SiC-Multiple-Floating-Zone Junction Termination Extension
IEEE ELECTRON DEVICE LETTERS, 32(7), 880–882.
author keywords: Edge termination; junction termination extension (JTE); PiN diode; 4H-SiC
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2010 conference paper
A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop
Proceedings of the international symposium on power semiconductor, 217–220.
Source: NC State University Libraries
Added: August 6, 2018
2009 article
Design and investigation of frequency capability of 15kV 4H-SiC IGBT
2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, pp. 271–274.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2009 journal article
Smart Grid Technologies
IEEE INDUSTRIAL ELECTRONICS MAGAZINE, 3(2), 16–23.
TL;DR:
Development of 15-kV SiC IGBTs and their impact on utility applications is discussed, and the need for power semiconductor devices with high-voltage, high- frequency, and high-temperature operation capability is growing.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018
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