Xing Huang Huang, X., Lee, D. Y., Bondarenko, V., Baker, A., Sheridan, D. C., Huang, A. Q., & Baliga, B. J. (2014). Experimental study of 650V AlGaN/GaN HEMT short-circuit safe operating area (SCSOA). Proceedings of the international symposium on power semiconductor, 273–276. Lee, M. C., Huang, X., Huang, A., & Brunt, E. (2013). An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs. 2013 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 44–47. https://doi.org/10.1109/wipda.2013.6695559 Huang, X., Wang, G. Y., Li, Y. S., Huang, A. Q., & Baliga, B. J. (2013). Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection. 2013 twenty-eighth annual ieee applied power electronics conference and exposition (apec 2013), 197–200. https://doi.org/10.1109/apec.2013.6520207 Huang, X., Baliga, B. J., Huang, A. Q., Suvorov, A., Capell, C., Cheng, L., & Agarwal, A. (2013). SiC Symmetric Blocking Terminations Using Orthogonal Positive Bevel Termination and Junction Termination Extension. Proceedings of the international symposium on power semiconductor, 179–182. https://doi.org/10.1109/ispsd.2013.6694475 Lee, M. C., Huang, X., & Huang, A. Q. (2012). An accurate prediction of two-dimensional carrier density profile in IGBT and its significances on steady-state and transient analysis. 2012 IEEE Energy Conversion Congress and Exposition (ECCE), 1496–1502. https://doi.org/10.1109/ecce.2012.6342637 Huang, X., Van Brunt, E., Baliga, B. J., & Huang, A. Q. (2012). Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices. IEEE ELECTRON DEVICE LETTERS, 33(11), 1592–1594. https://doi.org/10.1109/led.2012.2215003 Huang, X., Wang, G. Y., Lee, M. C., & Huang, A. Q. (2012). Reliability of 4H-SiC SBD/JBS diodes under repetitive surge current stress. 2012 IEEE Energy Conversion Congress and Exposition (ECCE), 2245–2248. https://doi.org/10.1109/ecce.2012.6342436 Huang, X., Wang, G. Y., Jiang, L., & Huang, A. Q. (2012). Ruggedness analysis of 600V 4H-SiC JBS diodes under repetitive avalanche conditions. 2012 twenty-seventh annual ieee applied power electronics conference and exposition (apec), 1688–1691. https://doi.org/10.1109/apec.2012.6166048