2019 journal article
Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx
IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(1), 539–545.
2014 conference paper
High mobility 4H-SiC MOSFETs using lanthanum silicate interface engineering and ALD deposited SiO2
Silicon carbide and related materials 2013, pts 1 and 2, 778-780, 557–561.
2012 conference paper
Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application
Physica status solidi c: current topics in solid state physics, vol 9, no 3-4, 9(3-4), 868–870.
2011 journal article
Investigation of the origin of V(T)/V(FB) modulation by La(2)O(3) capping layer approaches for NMOS application: Role of la diffusion, effect of host high-k layer, and interface properties
IEEE Transactions on Electron Devices, 58(9), 3106–3115.
2011 conference paper
Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics
Physica status solidi c: current topics in solid state physics, vol 8, no 7-8, 8(7-8).
2010 conference paper
Ultimate scalability of TaN metal floating gate with incorporation of High-K blocking dielectrics for flash memory applications
2010 international electron devices meeting - technical digest.
2010 journal article
low-frequency noise measurements of algan/gan metal-oxide-semiconductor heterostructure field-effect transistors with hfalo gate dielectric
IEEE Electron Device Letters, 31(9), 1041–1043.