Works (13)

2019 journal article

Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(1), 539–545.

By: X. Yang, B. Lee & V. Misra

Source: NC State University Libraries
Added: January 14, 2019

2016 journal article

Electrical characteristics of SiO2 deposited by atomic layer deposition on 4H-SiC after nitrous oxide anneal

IEEE Transactions on Electron Devices, 63(7), 2826–2830.

By: X. Yang, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

High mobility 4H-SiC lateral MOSFETs using lanthanum silicate and atomic layer deposited SiO2

IEEE Electron Device Letters, 36(4), 312–314.

By: X. Yang, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Investigation of lanthanum silicate conditions on 4H-SiC MOSFET characteristics

IEEE Transactions on Electron Devices, 62(11), 3781–3785.

By: X. Yang, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2014 conference paper

High mobility 4H-SiC MOSFETs using lanthanum silicate interface engineering and ALD deposited SiO2

In Silicon carbide and related materials 2013, pts 1 and 2 (Vol. 778-780, pp. 557–561).

By: X. Yang, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

Atomic layer deposition of SiO2 for AlGaN/GaN MOS-HFETs

IEEE Electron Device Letters, 33(9), 1240–1242.

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application

In Physica status solidi c: current topics in solid state physics, vol 9, no 3-4 (Vol. 9, pp. 868–870).

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Investigation of the origin of V(T)/V(FB) modulation by La(2)O(3) capping layer approaches for NMOS application: Role of la diffusion, effect of host high-k layer, and interface properties

IEEE Transactions on Electron Devices, 58(9), 3106–3115.

Source: NC State University Libraries
Added: August 6, 2018

2011 conference paper

Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics

In Physica status solidi c: current topics in solid state physics, vol 8, no 7-8 (Vol. 8).

By: C. Kirkpatrick, B. Lee, X. Yang & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

Platinum nanoparticles grown by atomic layer deposition for charge storage memory applications

Journal of the Electrochemical Society, 157(6), H589–592.

By: S. Novak, B. Lee, X. Yang & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures

Applied Physics Letters, 96(9).

Source: NC State University Libraries
Added: August 6, 2018

2010 conference paper

Ultimate scalability of TaN metal floating gate with incorporation of High-K blocking dielectrics for flash memory applications

In 2010 international electron devices meeting - technical digest.

By: S. Jayanti, X. Yang, R. Suri & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

low-frequency noise measurements of algan/gan metal-oxide-semiconductor heterostructure field-effect transistors with hfalo gate dielectric

IEEE Electron Device Letters, 31(9), 1041–1043.

By: C. Kayis, J. Leach, C. Zhu, M. Wu, X. Li, U. Ozgur, H. Morkoc, X. Yang, V. Misra, P. Handel

Source: NC State University Libraries
Added: August 6, 2018