Xiangyu Yang

Effects of LaSiO_{<italic>x</italic>} Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiO_{<italic>x</italic>}

Yang, X., Lee, B., & Misra, V. (2018, November 6). IEEE Transactions on Electron Devices, Vol. 66, pp. 539–545.

Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal

IEEE Transactions on Electron Devices, 63(7), 2826–2830.

High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO₂

Yang, X., Lee, B., & Misra, V. (2015, February 3). IEEE Electron Device Letters, Vol. 36, pp. 312–314.

Investigation of Lanthanum Silicate Conditions on 4H-SiC MOSFET Characteristics

IEEE Transactions on Electron Devices, 62(11), 3781–3785.

High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO₂

Yang, X. Y., Lee, B. M., & Misra, V. (2014, February 26). Materials Science Forum, Vol. 778-780, pp. 557–561.

Atomic Layer Deposition of $\hbox{SiO}_{2}$ for AlGaN/GaN MOS-HFETs

Kirkpatrick, C. J., Lee, B., Suri, R., Yang, X., & Misra, V. (2012, July 19). IEEE Electron Device Letters, Vol. 33, pp. 1240–1242.

Normally‐off AlGaN/GaN MOSHFET using ALD SiO₂ tunnel dielectric and ALD HfO₂ charge storage layer for power device application

Lee, B., Kirkpatrick, C., Choi, Y., Yang, X., Huang, A. Q., & Misra, V. (2012, February 29). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 9, pp. 868–870.

Investigation of the Origin of $V_{T}/V_{\rm FB}$ Modulation by $\hbox{La}_{2}\hbox{O}_{3}$ Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High- $k$ Layer, and Interface Properties

Lee, B., Novak, S. R., Lichtenwalner, D. J., Yang, X., & Misra, V. (2011, July 26). IEEE Transactions on Electron Devices, Vol. 58, pp. 3106–3115.

Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO₂ and HfAlO dielectrics

Kirkpatrick, C., Lee, B., Yang, X., & Misra, V. (2011, June 20). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 8.

Low-Frequency Noise Measurements of AlGaN/GaN Metal&#x2013;Oxide&#x2013;Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric

Kayis, C., Leach, J. H., Zhu, C. Y., Wu, M., Li, X., Ozgur, Ü., … Handel, P. H. (2010, August 10). IEEE Electron Device Letters, Vol. 31, pp. 1041–1043.

Platinum Nanoparticles Grown by Atomic Layer Deposition for Charge Storage Memory Applications

Novak, S., Lee, B., Yang, X., & Misra, V. (2010, January 1). Journal of The Electrochemical Society, Vol. 157, pp. H589–592.

Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures

Jayanti, S., Yang, X., Lichtenwalner, D. J., & Misra, V. (2010, March 1). Applied Physics Letters, Vol. 96.

Ultimate scalability of TaN metal floating gate with incorporation of high-K blocking dielectrics for Flash memory applications

Jayanti, S., Yang, N. X., Suri, R., & Misra, V. (2010, December 1). 2010 International Electron Devices Meeting - Technical Digest.