Xiangyu Yang

Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(1), 539–545.

Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal

IEEE Transactions on Electron Devices, 63(7), 2826–2830.

High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2

IEEE ELECTRON DEVICE LETTERS, 36(4), 312–314.

Investigation of Lanthanum Silicate Conditions on 4H-SiC MOSFET Characteristics

IEEE Transactions on Electron Devices, 62(11), 3781–3785.

High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Vol. 778-780, pp. 557–561.

Atomic Layer Deposition of SiO2 for AlGaN/GaN MOS-HFETs

IEEE ELECTRON DEVICE LETTERS, 33(9), 1240–1242.

Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 868–870.

Investigation of the Origin of V-T/V-FB Modulation by La2O3 Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-k Layer, and Interface Properties

IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 3106–3115.

Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

Low-Frequency Noise Measurements of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric

IEEE ELECTRON DEVICE LETTERS, 31(9), 1041–1043.

Platinum Nanoparticles Grown by Atomic Layer Deposition for Charge Storage Memory Applications

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(6), H589–H592.

Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures

APPLIED PHYSICS LETTERS, 96(9).

Ultimate scalability of TaN metal floating gate with incorporation of High-K blocking dielectrics for flash memory applications

2010 international electron devices meeting - technical digest.