Works (13)

Updated: July 5th, 2023 15:49

2019 journal article

Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(1), 539–545.

By: X. Yang n, B. Lee n & V. Misra n

author keywords: Atomic layer deposition (ALD); forming gas anneal (FGA) lanthanum silicate (LaSiOx); mobility; SiC; threshold voltage
UN Sustainable Development Goal Categories
Sources: Web Of Science, ORCID
Added: January 14, 2019

2016 journal article

Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal

IEEE Transactions on Electron Devices, 63(7), 2826–2830.

By: X. Yang n, B. Lee n & V. Misra n

author keywords: Atomic layer deposition (ALD); charge; MOSFETs; SiC; SiO2; threshold voltage
UN Sustainable Development Goal Categories
Sources: Web Of Science, ORCID, Crossref
Added: August 6, 2018

2015 journal article

High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2

IEEE ELECTRON DEVICE LETTERS, 36(4), 312–314.

By: X. Yang n, B. Lee n & V. Misra n

author keywords: Atomic layer deposition; lanthanum silicate; mobility; SiC
UN Sustainable Development Goal Categories
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Investigation of Lanthanum Silicate Conditions on 4H-SiC MOSFET Characteristics

IEEE Transactions on Electron Devices, 62(11), 3781–3785.

By: X. Yang n, B. Lee n & V. Misra n

author keywords: Atomic layer deposition (ALD); ALD SiO2; lanthanum silicate (LaSiOx); mobility; silicon carbide (SiC)
UN Sustainable Development Goal Categories
Sources: Web Of Science, ORCID, Crossref
Added: August 6, 2018

2014 article

High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Vol. 778-780, pp. 557–561.

By: X. Yang n, B. Lee n & V. Misra n

author keywords: 4H-SiC; ALD; La2O3; MOS; Mobility
Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 journal article

Atomic Layer Deposition of SiO2 for AlGaN/GaN MOS-HFETs

IEEE ELECTRON DEVICE LETTERS, 33(9), 1240–1242.

By: C. Kirkpatrick n, B. Lee n, R. Suri n, X. Yang n & V. Misra n

author keywords: Atomic layer deposition (ALD); GaN; heterostructure field-effect transistor (HFET); metal-oxide-semiconductor heterojunction field-effect transistor (MOS-HFET); SiO2
Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 article

Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 868–870.

By: B. Lee n, C. Kirkpatrick n, Y. Choi n, X. Yang n, A. Huang n & V. Misra n

author keywords: enhancement mode; GaN-MOSHFET; normally-off; atomic layer deposition
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Investigation of the Origin of V-T/V-FB Modulation by La2O3 Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-k Layer, and Interface Properties

IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 3106–3115.

By: B. Lee n, S. Novak n, D. Lichtenwalner n, X. Yang n & V. Misra n

author keywords: Advanced gate stack; high-k dielectrics; V-T control; work-function modulation
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 article

Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

By: C. Kirkpatrick n, B. Lee n, X. Yang n, V. Misra n, C. Wetzel & A. Khan

author keywords: GaN; HFET; MOS-HFET; ALD
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 journal article

Low-Frequency Noise Measurements of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric

IEEE ELECTRON DEVICE LETTERS, 31(9), 1041–1043.

By: C. Kayis*, J. Leach*, C. Zhu*, M. Wu*, X. Li*, U. Oezguer, H. Morkoc*, X. Yang n, V. Misra n, P. Handel*

author keywords: Gate dielectric; generation-recombination (G-R); metal-oxide-semiconductor heterostructure field-effect transistor (MOS-HFET); noise measurement
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 journal article

Platinum Nanoparticles Grown by Atomic Layer Deposition for Charge Storage Memory Applications

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(6), H589–H592.

By: S. Novak n, B. Lee n, X. Yang n & V. Misra n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 journal article

Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures

APPLIED PHYSICS LETTERS, 96(9).

By: S. Jayanti n, X. Yang n, D. Lichtenwalner n & V. Misra n

author keywords: aluminium compounds; dielectric materials; flash memories; lanthanum compounds; silicon compounds; transmission electron microscopy
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 conference paper

Ultimate scalability of TaN metal floating gate with incorporation of High-K blocking dielectrics for flash memory applications

2010 international electron devices meeting - technical digest.

By: S. Jayanti n, X. Yang n, R. Suri n & V. Misra n

TL;DR: Results indicate that high-K based IPD in conjunction with ultra-thin TaN metal FG can enable further scaling of NAND Flash memory beyond conventional oxide-nitride-oxide (ONO) based I PD technology. (via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

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