Xuegong Yu

Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure

Journal of Applied Physics, 105(7).

Proximity gettering of Cu at a (110)/(001) grain boundary interface formed by direct silicon bonding

Applied Physics Letters, 94(22).

Capacitance transient and current-/capacitance-voltage study of direct silicon bonded (110)/(100) interface

Applied Physics Letters, 92(26).

Deep-level transient spectroscopy study on direct silicon bonded (110)/(100) interfacial grain boundary

Semiconductor Science and Technology, 23(12).

Impact of Cu contamination on the electrical properties of a direct silicon bonded (110)/(100) interfacial grain boundary

Journal of Applied Physics, 104(11).