2009 journal article

Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure

Journal of Applied Physics, 105(7).

By: J. Lu, X. Yu, Y. Park & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Proximity gettering of Cu at a (110)/(001) grain boundary interface formed by direct silicon bonding

Applied Physics Letters, 94(22).

By: X. Yu, J. Lu, K. Youssef & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Capacitance transient and current-/capacitance-voltage study of direct silicon bonded (110)/(100) interface

Applied Physics Letters, 92(26).

By: X. Yu, J. Lu & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Deep-level transient spectroscopy study on direct silicon bonded (110)/(100) interfacial grain boundary

Semiconductor Science and Technology, 23(12).

By: X. Yu, J. Lu & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Impact of Cu contamination on the electrical properties of a direct silicon bonded (110)/(100) interfacial grain boundary

Journal of Applied Physics, 104(11).

By: X. Yu, J. Lu & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

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