@article{lu_yu_park_rozgonyi_2009, title={Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure}, volume={105}, number={7}, journal={Journal of Applied Physics}, author={Lu, J. G. and Yu, X. G. and Park, Y. and Rozgonyi, G.}, year={2009} }
 @article{yu_lu_youssef_rozgonyi_2009, title={Proximity gettering of Cu at a (110)/(001) grain boundary interface formed by direct silicon bonding}, volume={94}, number={22}, journal={Applied Physics Letters}, author={Yu, X. and Lu, J. and Youssef, K. and Rozgonyi, G.}, year={2009} }
 @article{yu_lu_rozgonyi_2008, title={Capacitance transient and current-/capacitance-voltage study of direct silicon bonded (110)/(100) interface}, volume={92}, number={26}, journal={Applied Physics Letters}, author={Yu, X. G. and Lu, J. G. and Rozgonyi, G.}, year={2008} }
 @article{yu_lu_rozgonyi_2008, title={Deep-level transient spectroscopy study on direct silicon bonded (110)/(100) interfacial grain boundary}, volume={23}, number={12}, journal={Semiconductor Science and Technology}, author={Yu, X. G. and Lu, J. G. and Rozgonyi, G.}, year={2008} }
 @article{yu_lu_rozgonyi_2008, title={Impact of Cu contamination on the electrical properties of a direct silicon bonded (110)/(100) interfacial grain boundary}, volume={104}, number={11}, journal={Journal of Applied Physics}, author={Yu, X. G. and Lu, J. G. and Rozgonyi, G.}, year={2008} }