@article{chen_tang_fang_sun_zhang_xiao_mohajerani_liu_zhang_sarkar_et al._2025, title={Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to-Spin Conversion}, volume={2}, ISSN={["1616-3028"]}, DOI={10.1002/adfm.202418647}, abstractNote={Abstract The integration of 2D van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next‐generation spintronic memory devices. However, achieving high‐efficiency spin–orbit torque (SOT) switching of monolayer vdW magnets at room temperature poses a significant challenge, particularly without an external magnetic field. Here, it is shown field‐free, deterministic, and nonvolatile SOT switching of perpendicular magnetization in the monolayer, diluted magnetic semiconductor (DMS), Fe‐doped MoS 2 (Fe:MoS 2 ) at up to 380 K with a current density of ≈7 × 10 4 A cm −2 . The in situ doping of Fe into monolayer MoS 2 via chemical vapor deposition and the geometry‐induced strain in the crystal break the rotational switching symmetry in Fe:MoS 2 , promoting field‐free SOT switching by generating out‐of‐plane spins via spin‐to‐spin conversion. An apparent anomalous Hall effect (AHE) loop shift at a zero in‐plane magnetic field verifies the existence of z spins in Fe:MoS 2 , inducing an antidamping‐like torque that facilitates field‐free SOT switching. This field‐free SOT application using a 2D ferromagnetic monolayer provides a new pathway for developing highly power‐efficient spintronic memory devices.}, journal={ADVANCED FUNCTIONAL MATERIALS}, author={Chen, Siwei and Tang, Zitao and Fang, Mengqi and Sun, Rui and Zhang, Xiaotong and Xiao, Licheng and Mohajerani, Seyed Sepehr and Liu, Na and Zhang, Yuze and Sarkar, Abdus Salam and et al.}, year={2025}, month={Feb} }