2013 journal article
Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric
Semiconductor Science and Technology, 28(7).
2012 conference paper
Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application
In Physica status solidi c: current topics in solid state physics, vol 9, no 3-4 (Vol. 9, pp. 868–870).
2012 conference paper
Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage
In Physica status solidi c: current topics in solid state physics, vol 9, no 3-4 (Vol. 9, pp. 864–867).
