Young-Hwan Choi

Works (3)

Updated: July 5th, 2023 15:45

2013 article

Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-kdielectric

Lee, B., Choi, Y. H., Kirkpatrick, C., Huang, A. Q., & Misra, V. (2013, June 21). Semiconductor Science and Technology, Vol. 28.

By: B. Lee*, Y. Choi*, C. Kirkpatrick*, A. Huang* & V. Misra* 

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Silicon Carbide Semiconductor Technologies
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2012 article

Normally‐off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application

Lee, B., Kirkpatrick, C., Choi, Y., Yang, X., Huang, A. Q., & Misra, V. (2012, February 29). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 9, pp. 868–870.

By: B. Lee n, C. Kirkpatrick n, Y. Choi n, X. Yang n, A. Huang n & V. Misra n 

author keywords: enhancement mode; GaN-MOSHFET; normally-off; atomic layer deposition
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2011 article

Threshold voltage stability comparison in AlGaN/GaN FLASH MOS‐HFETs utilizing charge trap or floating gate charge storage

Kirkpatrick, C., Lee, B., Choi, Y. H., Huang, A., & Misra, V. (2011, November 21). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 9, pp. 864–867.

By: C. Kirkpatrick n, B. Lee n, Y. Choi n, A. Huang n & V. Misra n 

author keywords: GaN; MOS-HFET; ALD; enhancement mode
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Silicon Carbide Semiconductor Technologies
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2026) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.