Works (3)

Updated: July 5th, 2023 15:45

2013 journal article

Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7).

By: B. Lee*, Y. Choi*, C. Kirkpatrick*, A. Huang* & V. Misra*

Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 article

Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 868–870.

By: B. Lee n, C. Kirkpatrick n, Y. Choi n, X. Yang n, A. Huang n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: enhancement mode; GaN-MOSHFET; normally-off; atomic layer deposition
Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 article

Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 864–867.

By: C. Kirkpatrick n, B. Lee n, Y. Choi n, A. Huang n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: GaN; MOS-HFET; ALD; enhancement mode
Sources: Web Of Science, ORCID
Added: August 6, 2018

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