2013 journal article

Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric

Semiconductor Science and Technology, 28(7).

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application

Physica status solidi c: current topics in solid state physics, vol 9, no 3-4, 9(3-4), 868–870.

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage

Physica status solidi c: current topics in solid state physics, vol 9, no 3-4, 9(3-4), 864–867.

Source: NC State University Libraries
Added: August 6, 2018