@article{lee_choi_kirkpatrick_huang_misra_2013, title={Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric}, volume={28}, ISSN={["1361-6641"]}, DOI={10.1088/0268-1242/28/7/074016}, number={7}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, author={Lee, B. and Choi, Y. H. and Kirkpatrick, C. and Huang, A. Q. and Misra, V.}, year={2013}, month={Jul} }
 @article{lee_kirkpatrick_choi_yang_huang_misra_2012, title={Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application}, volume={9}, ISSN={["1862-6351"]}, DOI={10.1002/pssc.201100422}, number={3-4}, journal={PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4}, author={Lee, Bongmook and Kirkpatrick, Casey and Choi, Young-hwan and Yang, Xiangyu and Huang, Alex Q. and Misra, Veena}, year={2012}, pages={868–870} }
 @article{kirkpatrick_lee_choi_huang_misra_2012, title={Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage}, volume={9}, ISSN={["1862-6351"]}, DOI={10.1002/pssc.201100421}, number={3-4}, journal={PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4}, author={Kirkpatrick, Casey and Lee, Bongmook and Choi, YoungHwan and Huang, Alex and Misra, Veena}, year={2012}, pages={864–867} }