Young-Hwan Choi

Lee, B., Choi, Y. H., Kirkpatrick, C., Huang, A. Q., & Misra, V. (2013). Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7). https://doi.org/10.1088/0268-1242/28/7/074016

Lee, B., Kirkpatrick, C., Choi, Y.-hwan, Yang, X., Huang, A. Q., & Misra, V. (2012). Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 868–870. https://doi.org/10.1002/pssc.201100422

Kirkpatrick, C., Lee, B., Choi, Y. H., Huang, A., & Misra, V. (2012). Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 864–867. https://doi.org/10.1002/pssc.201100421