Yuriy Semenov

Voltage control of electromagnetic properties in antiferromagnetic materials

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 57(24).

Electrical control of Dzyaloshinskii-Moriya interactions in magnetic Weyl semimetals

PHYSICAL REVIEW B, 108(13).

Electrical control of antiferromagnetic domain walls in Weyl semimetals

PHYSICAL REVIEW B, 107(9).

Carrier-induced ferromagnetism in two-dimensional magnetically doped semiconductor structures

PHYSICAL REVIEW B, 104(9).

Spin-transfer and fieldlike torques in antiferromagnets

PHYSICAL REVIEW B, 104(17).

Efficient Control of Stochastic Switching via Spin Pumping in Antiferromagnetic Structures

PHYSICAL REVIEW APPLIED, 13(6).

Optical bistability and self-opacity in magnetically doped monolayer transition metal dichalcogenides

PHYSICAL REVIEW B, 102(21).

Spin wave generation via localized spin-orbit torque in an antiferromagnet-topological insulator heterostructure

JOURNAL OF APPLIED PHYSICS, 128(4).

Controllable Dispersion of Domain-Wall Movement in Antiferromagnetic Thin Films at Finite Temperatures

PHYSICAL REVIEW APPLIED, 11(6).

Creation and Destruction of Skyrmions via Electrical Modulation of Local Magnetic Anisotropy in Magnetic Thin Films

PHYSICAL REVIEW APPLIED, 11(2).

Electrical generation and propagation of spin waves in antiferromagnetic thin-film nanostrips

APPLIED PHYSICS LETTERS, 114(23).

Thermal fluctuations in antiferromagnetic nanostructures

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 489.

Conductance nonreciprocity on the surface of a topological insulator with magnetic electrodes

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 128, 196–201.

Currentless reversal of Néel vector in antiferromagnets

Physical Review B, 95(1).

Bias-driven spontaneous spin-valley polarization in monolayer transition-metal dichalcogenides

Physical Review B, 93(4).

Resonantly enhanced spin-lattice relaxation of Mn2+ ions in diluted magnetic (Zn,Mn)Se/(Zn,Be) Se quantum wells

PHYSICAL REVIEW B, 93(19).

Highly efficient conductance control in a topological insulator based magnetoelectric transistor

Journal of Applied Physics, 118(22), 224502.

Nonlinear magnetic dynamics in a nanomagnet–topological insulator heterostructure

Physical Review B, 92(11).

Exciton valley relaxation in a single layer ofWS2measured by ultrafast spectroscopy

Physical Review B, 90(4).

Proposal of a topological insulator based magnetoelectric transistor

2014 72nd annual device research conference (drc), 149–150.

Quasi-optical electron transport across a magnetically induced junction on a topological insulator surface

Journal of Applied Physics, 116(22), 224301.

Spin Logic via Controlled Correlation in Nanomagnet–Dirac-Fermion Heterostructures

Physical Review Applied, 2(4).

Thin-film topological insulator-ferromagnet heterostructures for terahertz detection

Applied Physics Letters, 104(6), 061116.

Voltage-driven magnetic bifurcations in nanomagnet–topological insulator heterostructures

Physical Review B, 89(20).

Many-Body Effects in Valleytronics: Direct Measurement of Valley Lifetimes in Single-Layer MoS2

Nano Letters, 14(1), 202–206.

Electrically controlled magnetization in ferromagnet-topological insulator heterostructures

Physical Review B, 86(16).

Magnetic domain wall transfer via graphene mediated electrostatic control

Applied Physics Letters, 101(1), 013103.

Tunable photogalvanic effect on topological insulator surfaces via proximity interactions

Physical Review B, 86(20).

Electron-phonon interactions in bilayer graphene

Physical Review B, 83(16).

Unusual magnetoresistance in a topological insulator with a single ferromagnetic barrier

Applied Physics Letters, 98(24), 243112.

Weak ferromagnetism of antiferromagnetic domains in graphene with defects

Physical Review B, 84(16).

Electrically controlled magnetic switching based on graphene-magnet composite structures

Journal of Applied Physics, 107(6), 064507.

Electron spin relaxation in carbon nanotubes

Physical Review B, 82(15).

First-principles analysis of electron-phonon interactions in graphene

Physical Review B, 81(12).

Graphene spin capacitor for magnetic field sensing

Applied Physics Letters, 97(1), 013106.

Electrical Control of Exchange Bias Mediated by Graphene

Physical Review Letters, 101(14).

Electron spin relaxation via flexural phonon modes in semiconducting carbon nanotubes

Physical Review B, 77(20).

Magnetic polaron for a spin memory application

Journal of Applied Physics, 104(8), 084306.

Magnetoresistance in bilayer graphene via ferromagnet proximity effects

Physical Review B, 77(23).

Nonvolatile Memory via Spin Polaron Formation

IEEE Transactions on Nanotechnology, 7(4), 480–483.

Elastic spin-relaxation processes in semiconductor quantum dots

Physical Review B, 75(19).

Electrical Manipulation of Nonvolatile Spin Cell Based on Diluted Magnetic Semiconductor Quantum Dots

IEEE Transactions on Electron Devices, 54(5), 1032–1039.

Electron spin relaxation in semiconducting carbon nanotubes: The role of hyperfine interaction

Physical Review B, 75(4).

Spin field effect transistor with a graphene channel

Applied Physics Letters, 91(15), 153105.

Bistability in a magnetic and nonmagnetic double-quantum-well structure mediated by the magnetic phase transition

Applied Physics Letters, 86(7), 073107.

Correlation of phonon decay with localized electron spin-phase diffusion

Physical Review B, 70(8).

Phonon-Mediated Electron-Spin Phase Diffusion in a Quantum Dot

Physical Review Letters, 92(2).

Spin polaron and bistability in ferromagnetic semiconductor quantum structures

Physical Review B, 70(12).