Works (9)

Updated: July 5th, 2023 15:31

2022 journal article

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

By: P. Bagheri n, A. Klump n, S. Washiyama n, M. Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quinones-Garcia n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: June 20, 2022

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

By: P. Reddy*, W. Mecouch*, M. Breckenridge n, D. Khachariya n, P. Bagheri n, J. Kim n, Y. Guan n, S. Mita* ...

co-author countries: United States of America 🇺🇸
author keywords: AlGaN; APD; UVC
Sources: Web Of Science, ORCID
Added: March 11, 2022

2021 journal article

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2).

By: M. Breckenridge n, J. Tweedie*, P. Reddy*, Y. Guan n, P. Bagheri n, D. Szymanski n, S. Mita*, K. Sierakowski* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: January 14, 2021

2021 journal article

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

By: P. Bagheri n, P. Reddy*, S. Mita*, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 4, 2021

2021 journal article

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

By: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: March 29, 2021

2021 journal article

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, 119(18).

By: P. Reddy*, D. Khachariya n, W. Mecouch*, M. Breckenridge n, P. Bagheri n, Y. Guan n, J. Kim n, S. Pavlidis n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 3, 2021

2021 journal article

Weak localization and dimensional crossover in compositionally graded AlxGa1-xN

APPLIED PHYSICS LETTERS, 118(8).

By: A. Al-Tawhid n, A. Shafe n, P. Bagheri n, Y. Guan n, P. Reddy*, S. Mita*, B. Moody*, R. Collazo n, Z. Sitar n, K. Ahadi n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: February 25, 2021

2020 journal article

Recovery kinetics in high temperature annealed AlN heteroepitaxial films

JOURNAL OF APPLIED PHYSICS, 127(11).

By: S. Washiyama n, Y. Guan n, S. Mita*, R. Collazo n & Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 20, 2020

2019 journal article

The role of transient surface morphology on composition control in AlGaN layers and wells

APPLIED PHYSICS LETTERS, 114(3).

By: J. Dycus n, S. Washiyama n, T. Eldred n, Y. Guan n, R. Kirste*, S. Mita*, Z. Sitar n, R. Collazo n, J. LeBeau n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: February 11, 2019

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