Works (5)

2018 journal article

Electrical characteristics of 10-kV 4H-SiC MPS rectifiers with high Schottky barrier height

Journal of Electronic Materials, 47(2), 927–931.

Source: NC State University Libraries
Added: August 6, 2018

2018 journal article

SiC trench MOSFET with integrated self-assembled three-level protection Schottky barrier diode

IEEE Transactions on Electron Devices, 65(1), 347–351.

Source: NC State University Libraries
Added: August 6, 2018

2017 conference paper

Flexible epoxy resin substrate based 1.2 kV SiC half bridge module with ultra-low parasitics and high functionality

2017 ieee energy conversion congress and exposition (ecce), 4011–4018.

By: X. Zhao n, B. Gao, Y. Jiang, L. Zhang n, S. Wang n, Y. Xu n, K. Nishiguchi*, Y. Fukawa*, D. Hopkins

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 conference paper

Novel polymer substrate-based 1.2 kV/40 a double-sided intelligent power module

2017 ieee 67th electronic components and technology conference (ectc 2017), 1461–1467.

By: X. Zhao n, Y. Jiang, B. Gao, K. Nishiguchi, Y. Fukawa & D. Hopkins

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

Primary cilia are sensors of electrical field stimulation to induce osteogenesis of human adipose-derived stem cells

FASEB Journal, 31(1), 346–355.

By: S. Cai n, J. Bodle*, P. Mathieu*, A. Amos*, M. Hamouda*, S. Bernacki*, G. McCarty*, E. Loboa n

Source: NC State University Libraries
Added: August 6, 2018