2018 journal article
Electrical characteristics of 10-kV 4H-SiC MPS rectifiers with high Schottky barrier height
Journal of Electronic Materials, 47(2), 927–931.
By: Y. Jiang, W. Sung, J. Baliga, S. Wang, B. Lee & A. Huang
SiC trench MOSFET with integrated self-assembled three-level protection Schottky barrier diode
IEEE Transactions on Electron Devices, 65(1), 347–351.
By: X. Li, X. Tong, A. Huang, H. Tao, K. Zhou, Y. Jiang, J. Jiang, X. Deng ...and 4 other authors, X. She, B. Zhang, Y. Zhang & Q. Tian
2017 conference paper
Flexible epoxy resin substrate based 1.2 kV SiC half bridge module with ultra-low parasitics and high functionality
2017 ieee energy conversion congress and exposition (ecce), 4011–4018.
By: X. Zhao, B. Gao, Y. Jiang, L. Zhang, S. Wang, Y. Xu, K. Nishiguchi, Y. Fukawa, D. Hopkins
Novel polymer substrate-based 1.2 kV/40 a double-sided intelligent power module
2017 ieee 67th electronic components and technology conference (ectc 2017), 1461–1467.
By: X. Zhao, Y. Jiang, B. Gao, K. Nishiguchi, Y. Fukawa & D. Hopkins
2017 journal article
Primary cilia are sensors of electrical field stimulation to induce osteogenesis of human adipose-derived stem cells
FASEB Journal, 31(1), 346–355.
By: S. Cai, J. Bodle, P. Mathieu, A. Amos, M. Hamouda, S. Bernacki, G. McCarty, E. Loboa
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