2016 conference paper
Design and application of a 1200V ultra-fast integrated silicon carbide MOSFET module
Apec 2016 31st annual ieee applied power electronics conference and exposition, 2063–2070.
By: S. Guo, L. Zhang, Y. Lei, X. Li, W. Yu & A. Huang
High bandwidth current sensing of sic mosfet with a si current mirror
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (wipda), 200–203.
By: P. Liu, L. Zhang, A. Huang, S. Guo & Y. Lei
2015 conference paper
3.38 Mhz operation of 1.2kV SiC MOSFET with integrated ultra-fast gate drive
WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 390–395.
By: S. Guo, L. Zhang, Y. Lei, X. Li, F. Xue, W. Yu, A. Huang