Physics - 1999

Barnes, T., Black, N., Dean, D. J., & Swanson, E. S. (1999). BB intermeson potentials in the quark model - art. no. 045202. Physical Review. C, Nuclear Physics, 6004(4), 5202-.

Bechstedt, F., Pulci, O., & Schmidt, W. G. (1999). Theoretical aspects of the optical response of semiconductor surfaces. Physica Status Solidi. A, Applications and Materials Science, 175(1), 5–16. https://doi.org/10.1002/(sici)1521-396x(199909)175:1<5::aid-pssa5>3.0.co;2-9

Brown, J. D., Yu, Z. H., Matthews, J., Harney, S., Boney, J., Schetzina, J. F., … Krishnankutty, S. (1999). Visible-blind UV digital camera based on a 32 x 32 array of GaN/AlGaN p-i-n photodiodes. MRS Internet Journal of Nitride Semiconductor Research, 4(9), 1–10. https://doi.org/10.1557/s109257830000065x

Dietz, N., Woods, V., Ito, K., & Lauko, I. (1999). Real-time optical control of Ga1-xInxP film growth by p- polarized reflectance. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 1300–1306. https://doi.org/10.1116/1.581811

Guha, S., Bojarczuk, N. A., Johnson, M. A. L., & Schetzina, J. F. (1999). Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2. Applied Physics Letters, 75(4), 463–465. https://doi.org/10.1063/1.124409

Ha, Y., Shi, D. S., Small, G. W., Theil, E. C., & Allewell, N. M. (1999). Crystal structure of bullfrog M ferritin at 2.8 angstrom resolution: analysis of subunit interactions and the binuclear metal center. Journal of Biological Inorganic Chemistry, 4(3), 243–256. https://doi.org/10.1007/s007750050310

Keister, J. W., Rowe, J. E., Kolodziej, J. J., Niimi, H., Tao, H. S., Madey, T. E., & Lucovsky, G. (1999). Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 1250–1257. https://doi.org/10.1116/1.581805

King, S. W., Carlson, E. P., Therrien, R. J., Christman, J. A., Nemanich, R. J., & Davis, R. F. (1999). X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms. Journal of Applied Physics, 86(10), 5584–5593. https://doi.org/10.1063/1.371564

King, S. W., Davis, R. F., Ronning, C., & Nemanich, R. J. (1999). Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface. Journal of Electronic Materials, 28(12), L34–37. https://doi.org/10.1007/s11664-999-0145-4

King, S. W., Kern, R. S., Benjamin, M. C., Barnak, J. P., Nemanich, R. J., & Davis, R. F. (1999). Chemical vapor cleaning of 6H-SiC surfaces. Journal of the Electrochemical Society, 146(9), 3448–3454. https://doi.org/10.1149/1.1392494

Kiselev, A. A., Kim, K. W., & Stroscio, M. A. (1999). Calculational approach for the structure of electron and hole levels in quantum dots of varying shape. Physical Review. B, Condensed Matter and Materials Physics, 60(11), 7748–7751. https://doi.org/10.1103/physrevb.60.7748

Krim, J. (1999). Quartz microbalance studies of superconductivity-dependent sliding friction - Reply. Physical Review Letters, 83(6), 1262. https://doi.org/10.1103/PhysRevLett.83.1262

Lucovsky, G. (1999). Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide-nitride gate dielectrics with nitrided crystalline silicon-dielectric interfaces for application in advanced complementary metal-oxide-semiconductor devices. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 1340–1351. https://doi.org/10.1116/1.581818

Lucovsky, G. (1999). Silicon oxide/silicon nitride dual-layer films: A stacked gate dielectric for the 21st century. Journal of Non-Crystalline Solids, 254(1999 Sept. 1), 26–37. https://doi.org/10.1016/S0022-3093(99)00432-9

Mantese, L., Xue, Q. K., Sakurai, T., & Aspnes, D. E. (1999). Analysis of high-index Si(001) surfaces by reflectance difference spectroscopy. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 1652–1656. https://doi.org/10.1116/1.581867

Ramamoorthy, M., Briggs, E. L., & Bernholc, J. (1999). Defect energetics and impurity incorporation mechanisms at the arsenic-passivated Si(100) surface. Physical Review. B, Condensed Matter and Materials Physics, 60(11), 8178–8184. https://doi.org/10.1103/physrevb.60.8178

Smith, D. A., Bowman, J. D., Crawford, B. E., Grossmann, C. A., Haseyama, T., Masaike, A., … Yuan, V. (1999). Neutron resonance spectroscopy of Rh-103 from 30 eV to 2 keV - art. no. 045502. Physical Review. C, Nuclear Physics, 6004(4), 5502-. https://doi.org/10.1103/physrevc.60.045502

Smith, D. A., Bowman, J. D., Crawford, B. E., Grossmann, C. A., Haseyama, T., Masaike, A., … Yuan, V. W. (1999). Parity violation in neutron resonances of Rh-103 - art. no. 045503. Physical Review. C, Nuclear Physics, 6004(4), 5503-. https://doi.org/10.1103/physrevc.60.045503

Urquhart, S. G., Hitchcock, A. P., Smith, A. P., Ade, H., Lidy, W., Rightor, E. G., & Mitchell, G. E. (1999). NEXAFS spectromicroscopy of polymers: Overview and quantitative analysis of polyurethane polymers. Journal of Electron Spectroscopy and Related Phenomena, 100(1999 Oct.), 119–135. https://doi.org/10.1016/S0368-2048(99)00043-2

Young, A. P., Bandhu, R., Schafer, J., Niimi, H., & Lucovsky, G. (1999). Cathodoluminescence spectroscopy of nitrided SiO2-Si interfaces. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 1258–1262. https://doi.org/10.1116/1.581806