Physics

Stability of Si-O-F low-K dielectrics: attack by water molecules as function of near-neighbor Si-F bonding arrangements

Yang, H., & Lucovsky, G. (1999, September 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 254, pp. 128–133.

Reduction of the transition temperature of C54TiSi(2) through a Ta interlayer

Journal of the Korean Physical Society, 35(1999 Dec.), S769–773.

Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles

MATERIALS LETTERS, 41(5), 229–233.

Parity nonconservation in Pd-106 and Pd-108 neutron

PHYSICAL REVIEW C, 60(5).

Multifrequency studies of bright radio supernova remnants. III. X-ray and radio

ASTROPHYSICAL JOURNAL, 526(1), 365–384.

Iron regulatory element and internal loop/bulge structure for ferritin mRNA studied by cobalt(III) hexammine binding, molecular modeling, and NMR spectroscopy (vol 37, pg 1505, 1998)

Gdaniec, Z., Sierzputowska-Gracz, H., & Theil, E. C. (1999, April 27). BIOCHEMISTRY, Vol. 38, pp. 5676–5676.

Inhomogeneous fluids in an external field

In J. P. H. C. Caccamo & G. Stell (Eds.), New approaches to problems in liquid state theory: Inhomogeneities and phase separation in simple, complex, and quantum fluids (NATO Science Series; Series C, Vol. 529) (pp. 279–291).

Fluids with internal degrees of freedom

In J. P. H. C. Caccamo & G. Stell (Eds.), New approaches to problems in liquid state theory: Inhomogeneities and phase separation in simple, complex, and quantum fluids (NATO Science Series; Series C, Vol. 529) (pp. 91–105).

Double polarized neutron-proton scattering and meson-exchange nucleon-nucleon potential models

PHYSICAL REVIEW LETTERS, 83(14), 2711–2714.

Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces

Therrien, R., Lucovsky, G., & Davis, R. F. (1999, November 16). PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 176, pp. 793–796.

A simple model of nonlinear diffusive shock acceleration

ASTROPHYSICAL JOURNAL, 526(1), 385–399.

Visible-blind UV digital camera based on a 32 x 32 array of GaN/AlGaN p-i-n photodiodes

MRS Internet Journal of Nitride Semiconductor Research, 4(9), 1–10.

Theoretical aspects of the optical response of semiconductor surfaces

Bechstedt, F., Pulci, O., & Schmidt, W. G. (1999, September 16). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 175, pp. 5–16.

Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 17, pp. 1250–1257.

Silicon oxide/silicon nitride dual-layer films: a stacked gate dielectric for the 21st century

Lucovsky, G. (1999, September 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 254, pp. 26–37.

Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2

APPLIED PHYSICS LETTERS, 75(4), 463–465.

Real-time optical control of Ga1-xInxP film growth by p-polarized reflectance

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 17, pp. 1300–1306.

Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide-nitride gate dielectrics with nitrided crystalline silicon-dielectric interfaces for application in advanced complementary metal-oxide-semiconductor devices

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 17, pp. 1340–1351.

Parity violation in neutron resonances of Rh-103

PHYSICAL REVIEW C, 60(4).

Neutron resonance spectroscopy of Rh-103 from 30 eV to 2 keV

PHYSICAL REVIEW C, 60(4).