Physics

Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction

JOURNAL OF APPLIED PHYSICS, 84(4), 2086–2090.

A free electron laser-photoemission electron microscope system (FEL-PEEM)

SURFACE REVIEW AND LETTERS, 5(6), 1257–1268.

A cosmic-ray composition controlled by volatility and A/Q ratio. SNR shock acceleration of gas and dust

[Review of ]. SPACE SCIENCE REVIEWS, 86(1-4), 179–201.

The interplay between proto-neutron star convection and neutrino transport in core-collapse supernovae

ASTROPHYSICAL JOURNAL, 493(2), 848-+.

Systematic differences among nominal reference dielectric function spectra for crystalline Si as determined by spectroscopic ellipsometry

Bell, K. A., Mantese, L., Rossow, U., & Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 161–166.

Statistical distribution of reduced transition probabilities in Al-26

PHYSICS LETTERS B, 422(1-4), 13–18.

Stability of Si-O-F low-K dielectrics: Attack by water molecules as function of near-neighbor Si-F bonding arrangements

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 16, pp. 1525–1528.

Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films

Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 187–192.

Real-time optical characterization of GaP heterostructures by p-polarized reflectance

Dietz, N., & Ito, K. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 614–619.

Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 1721–1729.

Lip-lip interactions and the growth of multiwalled carbon nanotubes

Physical Review Letters, 80(2), 313–316.

Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 1757–1761.

Geometry and electronic structure of InP(001)(2 x 4) reconstructions

SURFACE SCIENCE, 409(3), 474–484.

Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 84(9), 5238–5242.

Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO(2) and silicon

APPLIED PHYSICS LETTERS, 73(6), 791–793.

Characterization of copper-diamond (100), (111), and (110) interfaces: Electron affinity and Schottky barrier

PHYSICAL REVIEW B, 58(3), 1643–1654.

Analysis of optical spectra by Fourier methods

Yoo, S. D., Edwards, N. V., & Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 143–148.

Ultrathin oxide gate dielectrics prepared by low temperature remote plasma-assisted oxidation

Niimi, H., & Lucovsky, G. (1998, January). SURFACE & COATINGS TECHNOLOGY, Vol. 98, pp. 1529–1533.

Ultrathin nitride/oxide (N/O) gate dielectrics for p(+)-polysilicon gated PMOSFET's prepared by a combined remote plasma enhanced CVD thermal oxidation process

IEEE ELECTRON DEVICE LETTERS, 19(10), 367–369.

The influence of time stress and location on behavioral warning compliance

SAFETY SCIENCE, 29(2), 143–158.