Physics

Stability of Si-O-F low-K dielectrics: Attack by water molecules as function of near-neighbor Si-F bonding arrangements

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 16, pp. 1525–1528.

Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films

Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 187–192.

Real-time optical characterization of GaP heterostructures by p-polarized reflectance

Dietz, N., & Ito, K. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 614–619.

Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 1721–1729.

Lip-lip interactions and the growth of multiwalled carbon nanotubes

Physical Review Letters, 80(2), 313–316.

Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 1757–1761.

Geometry and electronic structure of InP(001)(2 x 4) reconstructions

SURFACE SCIENCE, 409(3), 474–484.

Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 84(9), 5238–5242.

Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO(2) and silicon

APPLIED PHYSICS LETTERS, 73(6), 791–793.

Characterization of copper-diamond (100), (111), and (110) interfaces: Electron affinity and Schottky barrier

PHYSICAL REVIEW B, 58(3), 1643–1654.

Analysis of optical spectra by Fourier methods

Yoo, S. D., Edwards, N. V., & Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 143–148.

Ultrathin oxide gate dielectrics prepared by low temperature remote plasma-assisted oxidation

Niimi, H., & Lucovsky, G. (1998, January). SURFACE & COATINGS TECHNOLOGY, Vol. 98, pp. 1529–1533.

Ultrathin nitride/oxide (N/O) gate dielectrics for p(+)-polysilicon gated PMOSFET's prepared by a combined remote plasma enhanced CVD thermal oxidation process

IEEE ELECTRON DEVICE LETTERS, 19(10), 367–369.

The influence of time stress and location on behavioral warning compliance

SAFETY SCIENCE, 29(2), 143–158.

Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix

Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 507–512.

Reaction pathways for intrinsic and extrinsic defect metastability in light-soaked hydrogenated amorphous silicon - the Staebler-Wronski effect

Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 281–286.

Quadrupole moments and identical superdeformed bands in Tb-149

Physical Review. C, Nuclear Physics, 58(3), 1422–1429.

Plasma-engineered Si-SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O

Koh, K., Niimi, H., & Lucovsky, G. (1998, January). SURFACE & COATINGS TECHNOLOGY, Vol. 98, pp. 1524–1528.

Piezoelectric measurements with atomic force microscopy

APPLIED PHYSICS LETTERS, 73(26), 3851–3853.

Optical-phonon confinement and scattering in wurtzite heterostructures

PHYSICAL REVIEW B, 58(8), 4860–4865.