Physics

Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO2 and silicon

Applied Physics Letters, 73(6), 791–793.

Characterization of copper-diamond (100), (111), and (110) interfaces: Electron affinity and Schottky barrier

Physical Review. B, Condensed Matter and Materials Physics, 58(3), 1643–1654.

Analysis of optical spectra by Fourier methods

Thin Solid Films, 313(1998 Feb.), 143–148.

Ultrathin oxide gate dielectrics prepared by low temperature remote plasma-assisted oxidation

Surface & Coatings Technology, 98(1-3), 1529–1533.

Ultrathin nitride/oxide (N/O) gate dielectrics for p(+)-polysilicon gated PMOSFET's prepared by a combined remote plasma enhanced CVD thermal oxidation process

IEEE Electron Device Letters, 19(10), 367–369.

The influence of time stress and location on behavioral warning compliance

Safety Science, 29(2), 143–158.

Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix

Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 507–512.

Reaction pathways for intrinsic and extrinsic defect metastability in light-soaked hydrogenated amorphous silicon - the Staebler-Wronski effect

Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 281–286.

Quadrupole moments and identical superdeformed bands in Tb-149

Physical Review. C, Nuclear Physics, 58(3), 1422–1429.

Plasma-engineered Si-SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O

Surface & Coatings Technology, 98(1-3), 1524–1528.

Piezoelectric measurements with atomic force microscopy

Applied Physics Letters, 73(26), 3851–3853.

Optical-phonon confinement and scattering in wurtzite heterostructures

Physical Review. B, Condensed Matter and Materials Physics, 58(8), 4860–4865.

Optical characterization of GaAs/AlAs short period superlattices

Microelectronic Engineering, 43-4(1998 Aug.), 265–270.

Nonvanishing zero modes in the light-front current - art. no.071901

Physical Review. D, Particles and Fields, 5807(7), 1901.

Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(3), 1282–1285.

Minimization of dangling bond defects in hydrogenated silicon nitride dielectrics for thin film transistors (TFTs)

Journal of Non-Crystalline Solids, 230 (part B)(1998), 1221–1225.

Methods of identifying transition metal complexes that selectively cleave regulatory elements of mRNA and uses thereof

Washington, DC: U.S. Patent and Trademark Office.

Loops and bulge/loops in iron-responsive element isoforms influence iron regulatory protein binding - Fine-tuning of mRNA regulation?

Journal of Biological Chemistry, 273(37), 23637–23640.

Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same

Washington, DC: U.S. Patent and Trademark Office.

Enhanced modes of oxygen diffusion in silicon

Solid State Communications, 106(5), 243–248.