Physics

Correlations between electronic structure of transition metal atoms and performance of high-k gate dielectrics in advanced Si devices

Lucovsky, G. (2002, May 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 303, pp. 40–49.

Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation

Physical Review. B, Condensed Matter and Materials Physics, 65(19), 193103–193101.

Amorphous morphology, thermal stability and electronic structure of non-crystalline transition-metal elemental and binary oxides, and chalcogenides

Lucovsky, G. (2002, April 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 299, pp. 231–237.

Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 46(2-3), 299–315.

Total-dose radiation response of hafnium-silicate capacitors

Felix, J. A., Fleetwood, D. M., Schrimpf, R. D., Hong, J. G., Lucovsky, G., Schwank, JR, & Shaneyfelt, M. R. (2002, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 49, pp. 3191–3196.

Testing the utility of vertebrate remains in recognizing patterns in fluvial deposits: An example from the lower Horseshoe Canyon Formation, Alberta

PALAIOS, 17(5), 472–490.

Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials

Rodriguez, B. J., Gruverman, A., Kingon, A. I., & Nemanich, R. J. (2002, December). JOURNAL OF CRYSTAL GROWTH, Vol. 246, pp. 252–258.

Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces

JOURNAL OF APPLIED PHYSICS, 91(2), 732–738.

Nonlinear particle acceleration in relativistic shocks

ASTROPARTICLE PHYSICS, 18(3), 213–228.

Measurements of ultracold-neutron lifetimes in solid deuterium

PHYSICAL REVIEW LETTERS, 89(27).

Er-doped AlGaAs native oxides: Photoluminescence characterization and process optimization

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 8(4), 880–890.

Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices

Johnson, R. S., Hong, J. G., Hinkle, C., & Lucovsky, G. (2002, November). SOLID-STATE ELECTRONICS, Vol. 46, pp. 1799–1805.

Effect of methyl methacrylate/polyhedral oligomeric silsesquioxane random copolymers in compatibilization of polystyrene and poly(methyl methacrylate) blends

MACROMOLECULES, 35(21), 8029–8038.

Dynamics of the tip-sample interaction in near-field scanning optical microscopy and the implications for shear force as an accurate distance measure

APPLIED PHYSICS LETTERS, 81(21), 4055–4057.

Diffraction enhanced imaging contrast mechanisms in breast cancer specimens

MEDICAL PHYSICS, 29(10), 2216–2221.

Characterization of the effects of soft X-ray irradiation on polymers

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 122(1), 65–78.

Auger width and branching ratios for berylliumlike 1s2s(2)np P-1(0) and 1s2p(3 1)P(0) resonances and photoionization of beryllium from 1s(2)2s2 S-1

PHYSICAL REVIEW A, 65(3).

A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys

Lucovsky, G., Whitten, J. L., & Zhang, Y. (2002, November). SOLID-STATE ELECTRONICS, Vol. 46, pp. 1687–1697.

X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy

APPLIED PHYSICS LETTERS, 81(10), 1797–1799.

Surface science and the atomic-scale origins of friction: what once was old is new again

SURFACE SCIENCE, 500(1-3), 741–758.