Displaying works 101 - 120 of 215 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
1998 journal article
Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix
Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 507–512.
1998 journal article
Reaction pathways for intrinsic and extrinsic defect metastability in light-soaked hydrogenated amorphous silicon - the Staebler-Wronski effect
Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 281–286.
1998 journal article
Quadrupole moments and identical superdeformed bands in Tb-149
Physical Review. C, Nuclear Physics, 58(3), 1422–1429.
1998 article
Plasma-engineered Si-SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O
Koh, K., Niimi, H., & Lucovsky, G. (1998, January). SURFACE & COATINGS TECHNOLOGY, Vol. 98, pp. 1524–1528.
1998 journal article
Piezoelectric measurements with atomic force microscopy
APPLIED PHYSICS LETTERS, 73(26), 3851–3853.
1998 journal article
Optical-phonon confinement and scattering in wurtzite heterostructures
PHYSICAL REVIEW B, 58(8), 4860–4865.
1998 article
Optical characterization of GaAs/AlAs short period superlattices
Woo, D. H., Han, I. K., Choi, W. J., Lee, S., Kim, H. J., Lee, J. I., … Woo, J. C. (1998, August). MICROELECTRONIC ENGINEERING, Vol. 43-4, pp. 265–270.
1998 journal article
Nonvanishing zero modes in the light-front current - art. no.071901
Physical Review. D, Particles and Fields, 5807(7), 1901.
1998 article
Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 1282–1285.
1998 journal article
Minimization of dangling bond defects in hydrogenated silicon nitride dielectrics for thin film transistors (TFTs)
Journal of Non-Crystalline Solids, 230 (part B)(1998), 1221–1225.
1998 patent
Methods of identifying transition metal complexes that selectively cleave regulatory elements of mRNA and uses thereof
Washington, DC: U.S. Patent and Trademark Office.
1998 journal article
Loops and bulge/loops in iron-responsive element isoforms influence iron regulatory protein binding - Fine-tuning of mRNA regulation?
JOURNAL OF BIOLOGICAL CHEMISTRY, 273(37), 23637–23640.
1998 patent
Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
Washington, DC: U.S. Patent and Trademark Office.
1998 journal article
Enhanced modes of oxygen diffusion in silicon
SOLID STATE COMMUNICATIONS, 106(5), 243–248.
1998 journal article
Electrophonon resonance in cylindrical quantum wires
PHYSICAL REVIEW B, 58(7), 3580–3583.
1998 journal article
Dielectronic recombination in Li+
PHYSICAL REVIEW A, 58(3), 2001–2006.
1998 journal article
Controlled nitrogen incorporation at Si-SiO2 interfaces by remote plasma-assisted processing
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37(2), 709–714.
1998 journal article
Consistent methodology for calculating surface and interface energies
PHYSICAL REVIEW B, 57(12), 7281–7291.
1998 journal article
Atomic structure and thermal stability of silicon suboxides in bulk thin films and in transition regions at Si-SiO2 interfaces
Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 1–14.
1998 journal article
Astrophysical S factors for the Be-9((p)over-right-arrow,gamma)B-10 reaction
PHYSICAL REVIEW C, 58(1), 517–523.
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