Physics

Extraction of bounds on time-reversal non-invariance from neutron reactions

Physics Letters B, 447(3-4), 209–215.

Dispersion of polar optical phonons in wurtzite quantum wells

Physical Review. B, Condensed Matter and Materials Physics, 59(7), 5013–5020.

Chemical and strain effects on Boron-doped Si(100)

Physical Review. B, Condensed Matter and Materials Physics, 59(7), 4813–4821.

Phase segregation in polymer thin films: Elucidations by X-ray and scanning force microscopy

Europhysics Letters, 45(4), 526–532.

Representation of gap formation by a reduced order surface kinetics model using P-polarized reflectance measurements

Journal of Applied Physics, 86(1), 674–682.

Improvement of gate dielectric reliability for P plus poly Mos devices using remote pecvd top nitride deposition ultra-thin(2.4-6 Nm) gate oxides

Microelectronics Reliability, 39(3), 365–372.

Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy

Journal of Applied Physics, 86(1), 281–288.

Confinement-induced miscibility in polymer blends

Nature, 400(6739), 49–51.

Predicted images and spectra of gamma rays and x-rays from shell supernova remnants

Astrophysical Letters & Communications, 38(1-6), 425.

Reaction rate of Mg-24(p,gamma)Al-25

Nuclear Physics. A, 660(3), 349–378.

Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78).

Raman analysis and field emission study of ion beam etched diamond films

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(2), 700–704.

Quantum held theory of meson mining - art. no. 056003

Physical Review. D, Particles and Fields, 6005(5), 6005.

Photodetachment of H-

Physical Review. A, 60(1), 364–369.

Electronic transport in extended systems: Application to carbon nanotubes

Physical Review. B, Condensed Matter and Materials Physics, 60(11), 7828–7833.

Dry ex situ cleaning processes for (0001)(Si) 6H-SiC surfaces

Journal of the Electrochemical Society, 146(7), 2648–2651.

Cobalt suicide formation on 6H silicon carbide

Journal of Synchrotron Radiation, 6(1999 May 1), 188–189.

Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1831–1835.

Auger decay of multiply excited atomic systems

Physical Review. A, 59(3), 2065–2070.

An integral equation study of a simple point charge model of water

Journal of Chemical Physics, 110(2), 1148–1153.