TY - CONF TI - Automotive plastics recycling: Anticipating legislative demands AU - Dickey, EC C2 - 1992/1/1/ C3 - SAE Technical Papers DA - 1992/1/1/ DO - 10.4271/920835 UR - https://app.dimensions.ai/details/publication/pub.1099402702 ER - TY - CONF TI - Grain boundary structure and properties of high-TC superconductors. AU - Jagannadham, K. A2 - Narayan, J T3 - MRS Online Proceedings Library C2 - 1992/// C3 - Layered Superconductors: Fabrication, Properties and Applications DA - 1992/// DO - 10.1557/PROC-275-597 SP - 597–608 PB - Materials Research Society ER - TY - JOUR TI - Depression of order parameter and effect on grain boundary critical current density AU - Jagannadham, K. AU - Narayan, J. T2 - Materials Science and Engineering B AB - The depression of the order parameter at grain boundaries in high critical temperature superconducting oxides is determined using two formulations. First, we use the Bardeen-Cooper-Schrieffer formulation and assume formation of Cooper pairs by an attractive interaction potential. The spatial variation of the density of energy states at the Fermi level near the boundary, estimated as a function of hydrostatic stress field, is used to determine the depression of the order parameter. Second, the proximity-effect formulation is used in the form of a boundary condition on the order parameter at the interface. The boundary conditions are solved taking into account the spatial variation of the density of energy states. The depression of the order parameter from the two formulations is used in conjunction with atomic modeling to determine the critical current density associated with the grain boundaries. The model correctly predicts dependence of the critical current density across grain boundaries on the misorientation angle and temperature, in good agreement with experimental observations. DA - 1992/// PY - 1992/// DO - 10.1016/0921-5107(92)90120-X VL - 14 IS - 2 SP - 214-226 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0026898946&partnerID=MN8TOARS ER - TY - JOUR TI - THERMAL-STRESS AND STRAIN EFFECTS ON PHASE-TRANSITION TEMPERATURES IN DIFFERENTIAL THERMAL-ANALYSIS TESTING AU - ZHU, YT AU - DEVLETIAN, JH T2 - METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE DA - 1992/// PY - 1992/// VL - 23 IS - 2 SP - 451-455 ER - TY - JOUR TI - Growth of AlxGa1−xAs parabolic quantum wells by real‐time feedback control of composition AU - Aspnes, D. E. AU - Quinn, W. E. AU - Tamargo, M. C. AU - Pudensi, M. A. A. AU - Schwarz, S. A. AU - Brasil, M. J. S. P. AU - Nahory, R. E. AU - Gregory, S. T2 - Applied Physics Letters AB - Epitaxial AlxGa1−xAs structures whose compositions x vary continuously with thickness according to a given input function have been grown by chemical‐beam epitaxy under closed‐loop ellipsometric control. 200‐ and 500‐Å parabolic quantum wells analyzed by photoreflectance and secondary‐ion mass spectrometry, respectively, show that actual compositions follow target values to within 0.02 in x. Growth of the 200‐Å profile was controlled using compositions ellipsometrically determined for the outermost running 3.1 Å (∼1 monolayer) of depositing material. DA - 1992/3/9/ PY - 1992/3/9/ DO - 10.1063/1.107419 VL - 60 IS - 10 SP - 1244-1246 J2 - Appl. Phys. Lett. LA - en OP - SN - 0003-6951 1077-3118 UR - http://dx.doi.org/10.1063/1.107419 DB - Crossref ER - TY - JOUR TI - Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition AU - Narayan, J. AU - Tiwari, P. AU - Zheleva, T. AU - Chen, X. AU - Singh, J. AU - Chowdhury, R. T2 - Applied Physics Letters DA - 1992/9/14/ PY - 1992/9/14/ VL - 61 IS - 11 SP - 1290-1292 ER - TY - JOUR TI - Enhancement of nucleation and adhesion of diamond films on copper, stainless steel, and silicon substrates AU - Narayan, J. AU - Matera, G. AU - Singh, R.K. AU - Godbole, V.P. T2 - Journal of Applied Physics DA - 1992/1/15/ PY - 1992/1/15/ VL - 71 IS - 2 SP - 966-971 ER - TY - JOUR TI - CRITERION FOR SUPPRESSING WAFER BOW IN HETEROSTRUCTURES BY SELECTIVE EPITAXY AU - ELMASRY, NA AU - HUSSIEN, SA AU - FAHMY, AA AU - KARAM, NH AU - BEDAIR, SM T2 - MATERIALS LETTERS AB - Abstract One problem heteroepitaxial growth faces is the mismatch of thermal expansion coefficients. This mismatch causes bowing in the wafer during cooling down after the growth, which interferes with device fabrication especially the photolithographic processes. Selective epitaxy is found to be effective in eliminating wafer bow and it was experimentally achieved. In this work we develop a model based on basic principles of elasticity theory to predict the bow and to establish a criterion to eliminate this bow by selective epitaxy. It is found that the model is in agreement with our published experimental results in the case of selective epitaxy of GaAs on Si. DA - 1992/6// PY - 1992/6// DO - 10.1016/0167-577x(92)90105-s VL - 14 IS - 1 SP - 58-62 SN - 0167-577X ER - TY - JOUR TI - SELECTIVE DEPOSITION AND BOND STRAIN RELAXATION IN SILICON PECVD USING TIME MODULATED SILANE FLOW AU - PARSONS, GN AU - BOLAND, JJ AU - TSANG, JC T2 - JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS AB - The use of time modulated gas flows in plasma enhanced chemical vapor deposition (PECVD) gives an additional degree of flexibility to the growth process to control film nucleation and modify the properties of the deposited films. Specifically, we show that time modulated flow of silane into a hydrogen plasma allows for substrate selective nucleation and enhanced crystallinity of microcrystalline silicon films. We have used Raman spectroscopy, infrared absorption spectroscopy and scanning tunneling microscopy (STM) to investigate reactions between atomic hydrogen and the growth surface that result in crystallite formation and selective deposition. We show that exposing the growth surface to atomic hydrogen results in: 1) breaking of highly strained surface bonds; and 2) etching of silicon from the surface. We find that substrate dependent nucleation, and the different etch rates of the different nucleii, lead to selective deposition. However, we show that etching is not sufficient to account for microcrystallite formation, and that bond strain relaxation by atomic hydrogen promotes motion of adatoms on the surface and leads to the nucleation of crystalline silicon. The selective deposition technique has been applied to the formation of thin film transistor devices, and these results are also presented. DA - 1992/6// PY - 1992/6// DO - 10.1143/jjap.31.1943 VL - 31 IS - 6B SP - 1943-1947 SN - 0021-4922 UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1992JU82100002&KeyUID=WOS:A1992JU82100002 KW - PLASMA ENHANCED DEPOSITION KW - TIME MODULATED GAS FLOW KW - MICROCRYSTALLINE SILICON KW - POLYCRYSTALLINE SILICON KW - SELECTIVE SILICON DEPOSITION KW - CRYSTALLITE FORMATION KW - BOND STRAIN RELAXATION KW - HYDROGEN SILICON INTERACTIONS KW - RAMAN SPECTROSCOPY KW - SCANNING TUNNELING MICROSCOPY ER - TY - JOUR TI - ENHANCED MOBILITY TOP-GATE AMORPHOUS-SILICON THIN-FILM TRANSISTOR WITH SELECTIVELY DEPOSITED SOURCE DRAIN CONTACTS AU - PARSONS, GN T2 - IEEE ELECTRON DEVICE LETTERS AB - Amorphous silicon thin-film transistors (TFTs), in a top-gate staggered electrode structure have been prepared using selectively deposited doped silicon contact layers, formed in-situ by plasma-enhanced chemical vapor deposition (PECVD). Selective deposition reduces the number of processing steps and assures the formation of low-resistance contacts. Devices fabricated with two photomasks and one plasma deposition step show saturation and linear mobilities as high as 1.1 and 0.9 cm/sup 2//V-s, respectively, with threshold voltages between 3 and 6 V. On/off ratios are >10/sup 6/, with a subthreshold slope of 0.8 V/decade. The mobilities are at least a factor or 2 higher than previously reported for top-gate structures and are similar to values reported for bottom-gate (inverted staggered) TFTs.< > DA - 1992/2// PY - 1992/2// DO - 10.1109/55.144965 VL - 13 IS - 2 SP - 80-82 SN - 0741-3106 UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1992GZ85100003&KeyUID=WOS:A1992GZ85100003 ER - TY - JOUR TI - BOND SELECTIVITY IN SILICON FILM GROWTH AU - BOLAND, JJ AU - PARSONS, GN T2 - SCIENCE AB - Hydrogen atoms can selectively eliminate strained bonds that form during the growth of amorphous silicon films. By periodically interrupting the growth and exposing the grown material to hydrogen, the film composition can be varied continuously from a non-equilibrium amorphous structure to that of a crystalline solid. Furthermore, by tuning the hydrogen exposure it is possible to discriminate between Si—Si bonds formed on different substrates, thereby allowing substrate-selective growth. The evolution of the film structure during hydrogen exposure is directly observed by scanning tunneling microscopy, and a model describing the role of hydrogen is presented. DA - 1992/5/29/ PY - 1992/5/29/ DO - 10.1126/science.256.5061.1304 VL - 256 IS - 5061 SP - 1304-1306 SN - 0036-8075 UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1992HW13500027&KeyUID=WOS:A1992HW13500027 ER - TY - JOUR TI - INFLUENCE OF THE SUPPORT ON THE THERMAL-STABILITY OF SURFACE-BOUND [WCP(CO)3]- - IMPLICATIONS FOR CATALYST DESIGN AU - OTTEN, MM AU - LAMB, HH T2 - JOURNAL OF MOLECULAR CATALYSIS AB - Abstract Surface-bound {Mn+}[WCp(CO)3]− complexes on γ-Al2O3 and K-modified Al2O3 were studied by temperature-programmed decomposition (TPDE) andin situ infrared spectroscopy. [WCp(CO)3]− on γ-Al2O3 is adsorbed at Lewis acid centers via two isobridging carbonyl ligands, and [WCp(CO)3]− on K/Al2O3 is ion paired with {K+} ions via a single isocarbonyl. On γ-Al2O3, the strong ion-pairing interaction leads to labilization of CO and low-temperature decomposition. Activation of [WCp(CO)3]− on γ-Al2O3 at 400 °C in flowing He produces stable, highly active catalysts for propene metathesis. Catalysts derived from [WCp(CO)3]− on γ-Al2O3 have maximum activity at 220 °C and exhibit reversible deactivation at higher temperatures. Catalysts derived from [WCp(CO)3]− on K-modified Al2O3 are less active and less stable, suggesting that the Lewis acid centers are an integral component of the sites responsible for metathesis activity. DA - 1992/// PY - 1992/// DO - 10.1016/0304-5102(92)80248-f VL - 74 IS - 1-3 SP - 305-316 SN - 0304-5102 ER - TY - JOUR TI - CHARACTERIZATION OF DECAOSMIUM CARBIDO CARBONYL CLUSTERS SUPPORTED ON MGO AU - LAMB, HH AU - GATES, BC T2 - JOURNAL OF PHYSICAL CHEMISTRY AB - ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTCharacterization of decaosmium carbido carbonyl clusters supported on magnesiaH. Henry Lamb and Bruce C. GatesCite this: J. Phys. Chem. 1992, 96, 3, 1099–1105Publication Date (Print):February 1, 1992Publication History Published online1 May 2002Published inissue 1 February 1992https://doi.org/10.1021/j100182a016RIGHTS & PERMISSIONSArticle Views72Altmetric-Citations15LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InReddit PDF (2 MB) Get e-Alerts DA - 1992/2/6/ PY - 1992/2/6/ DO - 10.1021/j100182a016 VL - 96 IS - 3 SP - 1099-1105 SN - 0022-3654 ER - TY - PAT TI - Scanning tunneling microscope tips AU - Musselman, I. H. AU - Russell, P. E. C2 - 1992/// DA - 1992/// PY - 1992/// ER - TY - PAT TI - Method of fabricating scanning tunneling microscope tips AU - Musselman, I. H. AU - Russell, P. E. C2 - 1992/// DA - 1992/// PY - 1992/// ER - TY - PAT TI - High temperature refractory silicide rectifying contact C2 - 1992/// DA - 1992/// PY - 1992/// ER - TY - PAT TI - Ellipsometric control of material growth AU - Aspnes, D. E. AU - Quinn, D. E. C2 - 1992/// DA - 1992/// PY - 1992/// ER - TY - BOOK TI - The image processing handbook AU - Russ, J. C. DA - 1992/// PY - 1992/// PB - Boca Raton, Fla.: CRC Press SN - 0849342333 ER - TY - PAT TI - Implantation and electrical activation of dopants into monocrystalline silicon carbide AU - Edmond, J. A. AU - Davis, R. F. C2 - 1992/// DA - 1992/// PY - 1992/// ER - TY - JOUR TI - Characterization of bias-enhanced nucleation of diamond on silicon by invacuo surface-analysis and transmission electron-microscopy AU - Stoner, B. R. AU - Ma, G. H. M. AU - Wolter, S. D. AU - Glass, J. T. T2 - Physical Review. B, Condensed Matter and Materials Physics DA - 1992/// PY - 1992/// VL - 45 IS - 19 SP - 11067-11084 ER - TY - JOUR TI - Textured diamond growth on (100) beta-sic via microwave plasma chemical vapor-deposition AU - Stoner, B. R. AU - Glass, J. T. T2 - Applied Physics Letters DA - 1992/// PY - 1992/// VL - 60 IS - 6 SP - 698-700 ER - TY - BOOK TI - Finite plastic deformation of crystalline solids AU - Havner, K. S. CN - QD933 .H38 1992 DA - 1992/// PY - 1992/// PB - Cambridge: Cambridge University Press SN - 0521392454 ER - TY - JOUR TI - Comparative evaluation of plasticity theories against tension- torsion test at finite strain AU - Al-Gadhib, A. H. AU - Havner, Kerry T2 - Journal of Engineering Mechanics AB - Classical isotropic hardening, nonlinear kinematic hardening, and a combined linear‐isotropic/nonlinear‐kinematic hardening theory are compared and contrasted with experimental results from nonproportional loading of thin‐walled tubes of annealed copper (published by Bell and Khan in 1980) and mild steel (published by Bell in 1983) in tension and torsion. Comparisons are made for principal direction paths of Eulerian strain rate and for individual axial and shear strain components. In addition, experimentally determined ratios of principal strain‐rates and principal stresses are compared. Because of the near coaxiality and proportionality of the strain‐rate and deviatoric stress tensors in the moderate finite‐deformation range of the experiments (for a variety of nonproportional loading paths), isotropic hardening theory provides the most satisfactory predictions overall. A simple means of further improving those predictions is suggested. DA - 1992/// PY - 1992/// DO - 10.1061/(ASCE)0733-9399(1992)118:10(2104) VL - 118 SP - 2104–2126 ER -