TY - CHAP
TI - Inert gas dilution and ion bombardment effects in room temperature (35 degrees C) plasma deposition of a-Si:H
AU - Srinivasan, E
AU - Lloyd, DA
AU - Fang, M
AU - Parsons, GN
AU - Hack, M
AU - Schiff, EA
AU - Wagner, S
AU - Schropp, R
AU - Matsuda, A
T2 - Amorphous Silicon Technology - 1996
PY - 1996///
VL - 420
SP - 399-404
PB -
SE -
UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1996BH07P00064&KeyUID=WOS:A1996BH07P00064
ER -
TY - JOUR
TI - Dynamic rate and thickness metrology during poly-Si rapid thermal chemical vapor deposition from SiH4 using real time in situ mass spectrometry (vol 14, pg 267, 1996)
AU - Tedder, LL
AU - Rubloff, GW
AU - Conaghan, BF
AU - Parsons, GN
T2 - Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films
AB - First Page
DA - 1996///
PY - 1996///
DO - 10.1116/1.580187
VL - 14
IS - 4
SP - 2680
UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1996VA96400112&KeyUID=WOS:A1996VA96400112
ER -
TY - JOUR
TI - Pulsed laser deposition of titanium nitride and diamond-like carbon films on polymers
AU - Vispute, R.D.
AU - Narayan, J.
AU - Jagannadham, K.
T2 - Journal of Electronic Materials
DA - 1996///
PY - 1996///
DO - 10.1007/BF02666189
VL - 25
IS - 1
SP - 151-156
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0029678949&partnerID=MN8TOARS
KW - diamond-like carbon
KW - pulsed laser deposition
KW - TiN
ER -
TY - CONF
TI - Silicon nitride tools coated with TiC or TiN composite diamond structures
AU - Fan, W.D.
AU - Jagannadham, K.
AU - Narayan, J.
C2 - 1996///
C3 - Materials Research Society Symposium - Proceedings
DA - 1996///
VL - 415
SP - 45-50
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0029753126&partnerID=MN8TOARS
ER -
TY - JOUR
TI - Characteristics of titanium nitride films grown by pulsed laser deposition
AU - Chowdhury, R.
AU - Vispute, R.D.
AU - Jagannadham, K.
AU - Narayan, J.
T2 - Journal of Materials Research
DA - 1996///
PY - 1996///
DO - 10.1557/JMR.1996.0182
VL - 11
IS - 6
SP - 1458-1469
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0030172430&partnerID=MN8TOARS
ER -
TY - JOUR
TI - Multilayer diamond coatings on silicon carbide
AU - Fan, W.D.
AU - Jagannadham, K.
AU - Goral, B.C.
T2 - Surface and Coatings Technology
AB - Abstract Multilayer composite diamond coatings on SiC substrates with improved adhesion and wear resistance have been developed. The coatings consist of a first layer of discontinuous diamond crystallites which are anchored to the SiC substrates by an interposing layer of TiC or TiN films. A top layer of continuous diamond film is grown epitaxially on the first layer. The diamond films and TiC or TiN films were deposited using hot filament chemical vapor depostion and laser physical vapor deposition, respectively. The diamond films were characterized by scanning electron microscopy and Raman spectroscopy. Adhesion of the diamond coatings to SiC seal ring substrates was investigated by using overlap polishing with diamond paste or by wear test against Al-12.5%Si alloy. The results show that, after introducing an interposing layer, the internal thermal stresses are reduced so that the adhesion of diamond coatings on the SiC substrates is improved significantly.
DA - 1996///
PY - 1996///
DO - 10.1016/0257-8972(95)02476-X
VL - 81
IS - 2-3
SP - 172-182
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0030158048&partnerID=MN8TOARS
KW - diamond
KW - coatings
KW - SiC substrates
KW - tools
KW - chemical vapour deposition
ER -
TY - JOUR
TI - LaNiO3 and Cu3Ge contacts to YBa2Cu3O7-x films
AU - Kumar, D.
AU - Vispute, R.D.
AU - Aboelfotoh, O.
AU - Oktyabrsky, S.
AU - Jagannadham, K.
AU - Narayan, J.
AU - Apte, P.R.
AU - Pinto, R.
T2 - Journal of Electronic Materials
DA - 1996///
PY - 1996///
DO - 10.1007/s11664-996-0032-1
VL - 25
IS - 11
SP - 1760-1766
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0347988833&partnerID=MN8TOARS
KW - contact resistance
KW - Cu3Ge
KW - high temperature superconductors
KW - LaNiO3
KW - YBa2Cu3O7-x
ER -
TY - JOUR
TI - Heteroepitaxial structures of SrTiO3/TiN on Si(100) by in situ pulsed laser deposition
AU - Vispute, R.D.
AU - Narayan, J.
AU - Dovidenko, K.
AU - Jagannadham, K.
AU - Parikh, N.
AU - Suvkhanov, A.
AU - Budai, J.D.
T2 - Journal of Applied Physics
AB - High-quality ceramics based heteroepitaxial structures of oxide-nitride-semiconductors, i.e., SrTiO3/TiN/Si(100) have been fabricated by in situ pulsed laser deposition. The dependence of substrate temperature and oxygen partial pressure on the crystalline quality of the SrTiO3 films on Si with epitaxial TiN template has been examined. We found that epitaxial growth occurs on TiN/Si(100) above 500 °C, initially at a reduced O2 pressure (10−6 Torr), and followed by a deposition in the range of 5–10×10−4 Torr. X-ray diffraction (Θ, ω, and Φ scans) and transmission electron microscope (TEM) results revealed an excellent alignment of SrTiO3 and TiN films on Si(100) with a cube-on-cube epitaxy. Rutherford backscattering and ion channeling results show a channeling minimum yield (χmin) of ∼13% for the SrTiO3 films. High-resolution TEM results on the SrTiO3/TiN interface show that the epitaxial SrTiO3 film is separated from the TiN by an uniform 80–90 Å crystalline interposing layer presumably of TiNxO1−x (oxy-nitride). The SrTiO3 film fabricated at 700 °C showed a high relative dielectric constant of 312 at the frequency of 1 MHz. The electrical resistivity and the breakdown field of the SrTiO3 films were more than 5×1012 Ω cm and 6×105 V cm−1, respectively. An estimated leakage current density measured at an electric field of 5×105 V/cm−1 was less than 10−7 A/cm2.
DA - 1996///
PY - 1996///
DO - 10.1063/1.363798
VL - 80
IS - 12
SP - 6720-6724
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0001288358&partnerID=MN8TOARS
ER -
TY - JOUR
TI - Diamond deposition on 3d transition metals and their alloys
AU - Narayan, J.
AU - Nelson, M.
AU - Oktyabrsky, S.
AU - Jagannadham, K.
T2 - Materials Science and Engineering B
AB - The characteristics of formation of diamond films using hot-filament chemical vapor deposition on nickel and nickel-aluminum alloys have been investigated systematically. It has been found that the chemical nature of the substrate plays an important role in stabilization of graphite (sp2-bonded) or diamond (sp3-bonded) phase. The transition metal substrates with a partially filled 3d shell, for example nickel, tend to stabilize sp2 bonding and catalyze the formation of graphite. By alloying the substrate with aluminum, it was possible to form diamond directly on the NiAl substrates. The mechanism of formation of diamond on nickel-aluminum alloys, and the nucleation of diamond on single crystal graphite substrates are discussed. The importance of diamond coating on these technologically important structural alloys is described briefly.
DA - 1996///
PY - 1996///
DO - 10.1016/0921-5107(95)01316-4
VL - 38
IS - 1-2
SP - 46-52
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0037543552&partnerID=MN8TOARS
KW - diamond
KW - nickel-aluminium alloys
ER -
TY - CONF
TI - Equilibrium configuration of epitaxially strained thin film surfaces
AU - Jagannadham, K.
AU - Narayan, J.
AU - Hirth, J.P.
C2 - 1996///
C3 - Materials Research Society Symposium - Proceedings
DA - 1996///
VL - 399
SP - 383-388
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0029702095&partnerID=MN8TOARS
ER -
TY - CONF
TI - Epitaxial TiN films on sapphire and silicon-on-sapphire by pulsed laser deposition
AU - Vispute, R.D.
AU - Dovidenko, K.
AU - Jagannadham, K.
AU - Narayan, J.
C2 - 1996///
C3 - Materials Research Society Symposium - Proceedings
DA - 1996///
VL - 397
SP - 271-276
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0029745851&partnerID=MN8TOARS
ER -
TY - JOUR
TI - Characterization of highly oriented (110) TiN films grown on epitaxial Ge/Si(001) heterostructures
AU - Zheleva, T.
AU - Oktyabrsky, S.
AU - Jagannadham, K.
AU - Vispute, R.D.
AU - Narayan, J.
T2 - Journal of Materials Research
DA - 1996///
PY - 1996///
DO - 10.1557/JMR.1996.0049
VL - 11
IS - 2
SP - 399-411
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0030081370&partnerID=MN8TOARS
ER -
TY - CONF
TI - Bonding silicon devices on diamond heat spreaders
AU - Fan, W.D.
AU - Jagannadham, K.
AU - Narayan, J.
C2 - 1996///
C3 - Materials Research Society Symposium - Proceedings
DA - 1996///
VL - 416
SP - 211-216
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0029736766&partnerID=MN8TOARS
ER -
TY - CONF
TI - Epitaxial growth of AlN thin films on silicon and sapphire by pulsed laser deposition
AU - Vispute, R.D.
AU - Wu, H.
AU - Jagannadham, K.
AU - Narayan, J.
C2 - 1996///
C3 - Materials Research Society Symposium - Proceedings
DA - 1996///
VL - 395
SP - 325-330
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0029748160&partnerID=MN8TOARS
ER -
TY - JOUR
TI - A new design of tungsten carbide tools with diamond coatings
AU - Weihnacht, V.
AU - Fan, W.D.
AU - Jagannadham, K.
AU - Narayan, J.
AU - Liu, C.-T.
T2 - Journal of Materials Research
DA - 1996///
PY - 1996///
DO - 10.1557/JMR.1996.0282
VL - 11
IS - 9
SP - 2220-2230
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0030243331&partnerID=MN8TOARS
ER -
TY - JOUR
TI - Influence of processing parameters on the formation of WC-Co nanocomposite powder using a polymer as carbon source
AU - ZHU, YT
AU - MANTHIRAM, A
T2 - COMPOSITES PART B-ENGINEERING
DA - 1996///
PY - 1996///
VL - 27
IS - 5
SP - 407-413
ER -
TY - JOUR
TI - Deformation state effects on the J(c) of BSCCO tapes
AU - BLUMENTHAL, WR
AU - ZHU, YT
AU - LOWE, TC
AU - al.,
T2 - PHYSICA C
DA - 1996///
PY - 1996///
VL - 260
IS - 1-2
SP - 33-40
ER -
TY - JOUR
TI - Aluminum nitride films on different orientations of sapphire and silicon
AU - Dovidenko, K.
AU - Oktyabrsky, S.
AU - Narayan, J.
AU - Razeghi, M.
AU - Razeghi, M.
T2 - Journal of Applied Physics
DA - 1996///
PY - 1996///
VL - 79
IS - 5
SP - 2439–2445
ER -
TY - CONF
TI - Fracture and fatigue in a 3-D woven carbon fiber/epoxy composite
AU - Wigent, D. E.
AU - Mohamed, M. H.
AU - Fahmy, A. A.
C2 - 1996///
C3 - International SAMPE Symposium and Exhibition
DA - 1996///
ER -
TY - JOUR
TI - Effect of molecular architecture on DBS-induced block copolymer gels: A rheological study
AU - Nunez, CM
AU - Whitfield, JK
AU - Mercurio, DJ
AU - Ilzhoefer, , JR
AU - Spontak, RJ
AU - Khan, SA
T2 - MACROMOLECULAR SYMPOSIA
AB - Abstract Dibenzylidene sorbitol (DBS) is capable of gelling a variety of organic solvents and polymeric materials by forming a rigid, 3‐D hydrogen‐bonded network. In this work, two poly(siloxane)/poly(propylene oxide) segmented copolymers of equal composition and molecular weight, but different architectures (endblocked vs. pendant), as well as a pure poly(propylene oxide), have been gelled with DBS. We have investigated the dynamic rheological properties of these gels to ascertain the effect of copolymer architecture, PDMS comonomer and DBS concentration on network formation.
DA - 1996/4//
PY - 1996/4//
DO - 10.1002/masy.19961060126
VL - 106
SP - 275-286
SN - 1022-1360
ER -
TY - JOUR
TI - Controlled black liquor viscosity reduction through salting-in
AU - Roberts, JE
AU - Khan, SA
AU - Spontak, RJ
T2 - AICHE JOURNAL
AB - Abstract Black liquor viscosity increases exponentially with solids content and therefore causes processing problems for the paper industry by being a limiting factor in the Kraft pulp process. This study investigates a new approach for achieving viscosity reduction by “salting‐in” black liquor through the addition of thiocyanate salts. These salts generally increase the solubility of the polymer constituents in black liquor, leading to a decrease in its viscosity. Several thiocyanate salts capable of reducing liquor viscosity by more than two orders of magnitude have been identified, with viscosity reduction greatest at high solids content. Salting‐in of black liquor depends on the cation paired with the thiocyanate anion, as well as on solution pH and temperature. Comparative studies reveal that GuSCN is the most effective viscosity‐reducing agent of the series examined and that lignin plays an important role in the viscosity behavior of both unmodified and salted‐in black liquor at high solids concentrations. These experimental findings are interpreted in terms of the underlying principles that describe salting‐in and how it affects aqueous solution structure.
DA - 1996/8//
PY - 1996/8//
DO - 10.1002/aic.690420821
VL - 42
IS - 8
SP - 2319-2326
SN - 0001-1541
ER -
TY - JOUR
TI - A novel approach to black liquor viscosity reduction using salt additives
AU - Roberts, J.E.
AU - Spontak, R.J.
AU - Jameel, H.
AU - Khan, S.A.
T2 - TAPPI Journal
DA - 1996///
PY - 1996///
VL - 79
IS - 8
SP - 167-174
ER -
TY - JOUR
TI - Dynamic rate and thickness metrology during poly-Si rapid thermal chemical vapor deposition from SiH4 using real time in situ mass spectrometry
AU - Tedder, LL
AU - Rubloff, GW
AU - Cohaghan, BF
AU - Parsons, Gregory
T2 - Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films
AB - Real-time in situ mass spectrometry has been applied to poly-Si rapid thermal chemical vapor deposition (RTCVD) (from SiH4) on thermally grown SiO2 as a way to determine film thickness at the end of the process and to infer dynamic deposition rate during the process for run-to-run and real-time control applications. Monitoring process ambient at 5 Torr is achieved using two-stage differential pumping of a sampling aperture in the exhaust stream, and a rapid response time (∼1 s for a ∼30 s process cycle) allows for real time sensing of reactant input, product generation, and reactant depletion. Active mass spectrometric sampling of the reaction by-product (H2 generated by SiH4 decomposition) provides a monitor of the total reaction/deposition rate during poly-Si RTCVD in the range 550–850°C. Product generation as a function of temperature is readily distinguished from reactant cracking fragments by spectral analysis. A well-defined monotonic correlation between the time-integrated H+2 product signal and the poly-Si film thickness, determined ex situ by single-point interferometry (Nanometrics), demonstrates that the integrated mass spectrometric signal can provide real-time thickness metrology. In addition, the time-dependence of product and reactant signals provides a real-time indication of detailed equipment behavior during the process.
DA - 1996///
PY - 1996///
DO - 10.1116/1.579887
VL - 14
IS - 2
SP - 267-270
UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1996UA57500001&KeyUID=WOS:A1996UA57500001
ER -
TY - JOUR
TI - Ab initio calculation of hydrogen abstraction energetics from silicon hydrides
AU - Srinivasan, E
AU - Yang, H
AU - Parsons, GN
T2 - JOURNAL OF CHEMICAL PHYSICS
AB - In this article, we present calculated energies for the abstraction of hydrogen from silicon monohydride and silicon dihydride surface bonding units by atomic hydrogen obtained using ab initio configuration interaction theory. Three and four silicon atom clusters are used to model the dihydride and monohydride units, respectively. Heats of reaction and activation energy barriers are calculated, including the vibrational energies of the initial, final, and transition states. Hydrogen abstraction from a Si–H unit (H+Si4H10→Si4H9+H2) is found to be exothermic by 9.4 kcal/mol with a transition state energy barrier of 5.5 kcal/mol when H approaches along the surface normal. The dihydride abstraction reaction, H+Si3H8→Si3H7+H2, is exothermic by 7.7 kcal/mol and has an energy barrier of 7.3 kcal/mol when H is approaching along Si–H axis. The barrier is larger for hydrogen atom approaching along the surface normal. The larger barrier for abstraction from a dihydride unit is consistent with our experimental observation of a preferential reduction in monohydride bond concentrations when hydrogenated silicon films are exposed to atomic hydrogen during plasma deposition.
DA - 1996/10/1/
PY - 1996/10/1/
DO - 10.1063/1.472387
VL - 105
IS - 13
SP - 5467-5471
SN - 0021-9606
UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1996VL46900020&KeyUID=WOS:A1996VL46900020
ER -
TY - JOUR
TI - The effect of reversibility on the selectivity of parallel reactions in a porous catalyst
AU - Roberts, GW
AU - Lamb, HH
T2 - CHEMICAL ENGINEERING SCIENCE
AB - The selectivity of two first-order, parallel reactions, one reversible and one irreversible, can be altered substantially by the presence of an intraparticle diffusion resistance. At very large resistances, the relative selectivity approaches an asymptotic limit which depends on the kinetic, transport and thermodynamic parameters of the reaction system. It is possible for the selectivity to the product of the reversible reaction to change sign as the pore diffusion resistance increases, i.e. there can be a net formation of that product at low resistances and a net consumption at high resistances. In some cases, the rate of consumption of the product of the reversible reaction can be so high that the ratio of product concentration to reactant concentration in the bulk fluid moves away from the equilibrium ratio. This behavior contrasts markedly with that of two irreversible, first-order reactions in parallel, where the selectivity is independent of the intraparticle diffusion resistance.
DA - 1996/2//
PY - 1996/2//
DO - 10.1016/0009-2509(95)00266-9
VL - 51
IS - 3
SP - 441-448
SN - 0009-2509
ER -
TY - JOUR
TI - Pd/silica cluster catalysts: Synthesis and reactivity with H-2 and C2H4
AU - Reifsnyder, SN
AU - Lamb, HH
T2 - CATALYSIS LETTERS
DA - 1996///
PY - 1996///
DO - 10.1007/bf00815276
VL - 40
IS - 3-4
SP - 155-161
SN - 1011-372X
KW - palladium catalysts
KW - metal clusters
KW - EXAFS spectroscopy
KW - hydride
KW - carbide
ER -
TY - PAT
TI - Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy
AU - Bachmann, K. J.
AU - Dietz, N.
AU - Miller, A. E.
C2 - 1996///
DA - 1996///
PY - 1996///
ER -
TY - PAT
TI - Oriented diamond film structures on non-diamond substrates
AU - Glass, J. T.
AU - Simendinger, D. T.
AU - Goeller, P. T.
C2 - 1996///
DA - 1996///
PY - 1996///
ER -
TY - PAT
TI - Method for forming a diamond coated field emitter and device produced thereby
AU - Liu, J.
AU - Wolter, S.
AU - McClure, M. T.
AU - Stoner, B. R.
AU - Glass, J. T.
AU - Hren, J. J.
C2 - 1996///
DA - 1996///
PY - 1996///
ER -
TY - PAT
TI - Diamond films on nondiamond substrates
AU - Yang, P.
AU - Zhu, W.
AU - Glass, J. T.
C2 - 1996///
DA - 1996///
PY - 1996///
ER -
TY - PAT
TI - Hybrid metal/metal oxide electrodes for ferroelectric capacitors
AU - Kingon, A. I.
AU - Al-Shareef, H. N.
AU - Auciello, O. H.
AU - Gifford, K. D.
AU - Lichtenwalner, D. J.
AU - Dat, R.
C2 - 1996///
DA - 1996///
PY - 1996///
ER -
TY - JOUR
TI - Strain-related phenomena in GaN thin films
AU - Kisielowski, C.
AU - Kruger, J.
AU - Ruvimov, S.
AU - Suski, T.
AU - Ager, J. W.
AU - Jones, E.
AU - Lilientalweber, Z.
AU - Rubin, M.
AU - Weber, E. R.
AU - Bremser, M. D.
AU - Davis, R. F.
T2 - Physical Review. B, Condensed Matter and Materials Physics
DA - 1996///
PY - 1996///
VL - 54
IS - 24
SP - 17745-17753
ER -
TY - BOOK
TI - Materials science: A multimedia approach
AU - Russ, J. C.
CN - TA404.3 .R87 1996 CD-ROM [Hill & Special Collections]
DA - 1996///
PY - 1996///
SN - 0534957366
ER -
TY - CONF
TI - Growth of bulk AIN and GaN single crystals by sublimation
AU - Balkas, C. M.
AU - Sitar, Z.
AU - Zheleva, T.
AU - Bergman, L.
AU - Shmagin, I. K.
AU - Muth, J. F.
AU - Kolbas, R. M.
AU - Nemanich, R.
AU - Davis, R. F.
C2 - 1996///
C3 - III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449)
CN - QC176.9 .M84 A14 1997
DA - 1996///
SP - 41-46
PB - Pittsburgh, Pa.: Materials Research Society
ER -
TY - JOUR
TI - A comparative study of hardening theories in torsion using the Taylor polycrystal model
AU - Lin, G
AU - Havner, KS
T2 - INTERNATIONAL JOURNAL OF PLASTICITY
AB - A study of five rate-independent hardening rules (from Taylor and Elam (“The Distortion of an Aluminium Crystal during a Tensile Test”, Proc. R. Soc. Lond. (1923), A102, 643) to Bassani and Wu (“Latent Hardening in Single Crystals II. Analytical Characterization and Predictions,” Proc. R. Soc. Lond. (1991), A435, 21)) is presented based upon the classic Taylor polycrystal model in finite strain torsion. Comparisons of aggregate shear stress-strain curves, evolving crystallographic textures, yield loci, and axial stresses among the theories are made; and results are assessed against experiments on polycrystalline copper from the literature.
DA - 1996///
PY - 1996///
DO - 10.1016/S0749-6419(96)00025-3
VL - 12
IS - 5
SP - 695-718
SN - 0749-6419
ER -