TY - CHAP TI - Inert gas dilution and ion bombardment effects in room temperature (35 degrees C) plasma deposition of a-Si:H AU - Srinivasan, E AU - Lloyd, DA AU - Fang, M AU - Parsons, GN AU - Hack, M AU - Schiff, EA AU - Wagner, S AU - Schropp, R AU - Matsuda, A T2 - Amorphous Silicon Technology - 1996 PY - 1996/// VL - 420 SP - 399-404 PB - SE - UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1996BH07P00064&KeyUID=WOS:A1996BH07P00064 ER - TY - JOUR TI - Dynamic rate and thickness metrology during poly-Si rapid thermal chemical vapor deposition from SiH4 using real time in situ mass spectrometry (vol 14, pg 267, 1996) AU - Tedder, LL AU - Rubloff, GW AU - Conaghan, BF AU - Parsons, GN T2 - Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films AB - First Page DA - 1996/// PY - 1996/// DO - 10.1116/1.580187 VL - 14 IS - 4 SP - 2680 UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1996VA96400112&KeyUID=WOS:A1996VA96400112 ER - TY - JOUR TI - Pulsed laser deposition of titanium nitride and diamond-like carbon films on polymers AU - Vispute, R.D. AU - Narayan, J. AU - Jagannadham, K. T2 - Journal of Electronic Materials DA - 1996/// PY - 1996/// DO - 10.1007/BF02666189 VL - 25 IS - 1 SP - 151-156 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0029678949&partnerID=MN8TOARS KW - diamond-like carbon KW - pulsed laser deposition KW - TiN ER - TY - CONF TI - Silicon nitride tools coated with TiC or TiN composite diamond structures AU - Fan, W.D. AU - Jagannadham, K. AU - Narayan, J. C2 - 1996/// C3 - Materials Research Society Symposium - Proceedings DA - 1996/// VL - 415 SP - 45-50 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0029753126&partnerID=MN8TOARS ER - TY - JOUR TI - Characteristics of titanium nitride films grown by pulsed laser deposition AU - Chowdhury, R. AU - Vispute, R.D. AU - Jagannadham, K. AU - Narayan, J. T2 - Journal of Materials Research DA - 1996/// PY - 1996/// DO - 10.1557/JMR.1996.0182 VL - 11 IS - 6 SP - 1458-1469 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0030172430&partnerID=MN8TOARS ER - TY - JOUR TI - Multilayer diamond coatings on silicon carbide AU - Fan, W.D. AU - Jagannadham, K. AU - Goral, B.C. T2 - Surface and Coatings Technology AB - Abstract Multilayer composite diamond coatings on SiC substrates with improved adhesion and wear resistance have been developed. The coatings consist of a first layer of discontinuous diamond crystallites which are anchored to the SiC substrates by an interposing layer of TiC or TiN films. A top layer of continuous diamond film is grown epitaxially on the first layer. The diamond films and TiC or TiN films were deposited using hot filament chemical vapor depostion and laser physical vapor deposition, respectively. The diamond films were characterized by scanning electron microscopy and Raman spectroscopy. Adhesion of the diamond coatings to SiC seal ring substrates was investigated by using overlap polishing with diamond paste or by wear test against Al-12.5%Si alloy. The results show that, after introducing an interposing layer, the internal thermal stresses are reduced so that the adhesion of diamond coatings on the SiC substrates is improved significantly. DA - 1996/// PY - 1996/// DO - 10.1016/0257-8972(95)02476-X VL - 81 IS - 2-3 SP - 172-182 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0030158048&partnerID=MN8TOARS KW - diamond KW - coatings KW - SiC substrates KW - tools KW - chemical vapour deposition ER - TY - JOUR TI - LaNiO3 and Cu3Ge contacts to YBa2Cu3O7-x films AU - Kumar, D. AU - Vispute, R.D. AU - Aboelfotoh, O. AU - Oktyabrsky, S. AU - Jagannadham, K. AU - Narayan, J. AU - Apte, P.R. AU - Pinto, R. T2 - Journal of Electronic Materials DA - 1996/// PY - 1996/// DO - 10.1007/s11664-996-0032-1 VL - 25 IS - 11 SP - 1760-1766 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0347988833&partnerID=MN8TOARS KW - contact resistance KW - Cu3Ge KW - high temperature superconductors KW - LaNiO3 KW - YBa2Cu3O7-x ER - TY - JOUR TI - Heteroepitaxial structures of SrTiO3/TiN on Si(100) by in situ pulsed laser deposition AU - Vispute, R.D. AU - Narayan, J. AU - Dovidenko, K. AU - Jagannadham, K. AU - Parikh, N. AU - Suvkhanov, A. AU - Budai, J.D. T2 - Journal of Applied Physics AB - High-quality ceramics based heteroepitaxial structures of oxide-nitride-semiconductors, i.e., SrTiO3/TiN/Si(100) have been fabricated by in situ pulsed laser deposition. The dependence of substrate temperature and oxygen partial pressure on the crystalline quality of the SrTiO3 films on Si with epitaxial TiN template has been examined. We found that epitaxial growth occurs on TiN/Si(100) above 500 °C, initially at a reduced O2 pressure (10−6 Torr), and followed by a deposition in the range of 5–10×10−4 Torr. X-ray diffraction (Θ, ω, and Φ scans) and transmission electron microscope (TEM) results revealed an excellent alignment of SrTiO3 and TiN films on Si(100) with a cube-on-cube epitaxy. Rutherford backscattering and ion channeling results show a channeling minimum yield (χmin) of ∼13% for the SrTiO3 films. High-resolution TEM results on the SrTiO3/TiN interface show that the epitaxial SrTiO3 film is separated from the TiN by an uniform 80–90 Å crystalline interposing layer presumably of TiNxO1−x (oxy-nitride). The SrTiO3 film fabricated at 700 °C showed a high relative dielectric constant of 312 at the frequency of 1 MHz. The electrical resistivity and the breakdown field of the SrTiO3 films were more than 5×1012 Ω cm and 6×105 V cm−1, respectively. An estimated leakage current density measured at an electric field of 5×105 V/cm−1 was less than 10−7 A/cm2. DA - 1996/// PY - 1996/// DO - 10.1063/1.363798 VL - 80 IS - 12 SP - 6720-6724 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0001288358&partnerID=MN8TOARS ER - TY - JOUR TI - Diamond deposition on 3d transition metals and their alloys AU - Narayan, J. AU - Nelson, M. AU - Oktyabrsky, S. AU - Jagannadham, K. T2 - Materials Science and Engineering B AB - The characteristics of formation of diamond films using hot-filament chemical vapor deposition on nickel and nickel-aluminum alloys have been investigated systematically. It has been found that the chemical nature of the substrate plays an important role in stabilization of graphite (sp2-bonded) or diamond (sp3-bonded) phase. The transition metal substrates with a partially filled 3d shell, for example nickel, tend to stabilize sp2 bonding and catalyze the formation of graphite. By alloying the substrate with aluminum, it was possible to form diamond directly on the NiAl substrates. The mechanism of formation of diamond on nickel-aluminum alloys, and the nucleation of diamond on single crystal graphite substrates are discussed. The importance of diamond coating on these technologically important structural alloys is described briefly. DA - 1996/// PY - 1996/// DO - 10.1016/0921-5107(95)01316-4 VL - 38 IS - 1-2 SP - 46-52 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0037543552&partnerID=MN8TOARS KW - diamond KW - nickel-aluminium alloys ER - TY - CONF TI - Equilibrium configuration of epitaxially strained thin film surfaces AU - Jagannadham, K. AU - Narayan, J. AU - Hirth, J.P. C2 - 1996/// C3 - Materials Research Society Symposium - Proceedings DA - 1996/// VL - 399 SP - 383-388 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0029702095&partnerID=MN8TOARS ER - TY - CONF TI - Epitaxial TiN films on sapphire and silicon-on-sapphire by pulsed laser deposition AU - Vispute, R.D. AU - Dovidenko, K. AU - Jagannadham, K. AU - Narayan, J. C2 - 1996/// C3 - Materials Research Society Symposium - Proceedings DA - 1996/// VL - 397 SP - 271-276 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0029745851&partnerID=MN8TOARS ER - TY - JOUR TI - Characterization of highly oriented (110) TiN films grown on epitaxial Ge/Si(001) heterostructures AU - Zheleva, T. AU - Oktyabrsky, S. AU - Jagannadham, K. AU - Vispute, R.D. AU - Narayan, J. T2 - Journal of Materials Research DA - 1996/// PY - 1996/// DO - 10.1557/JMR.1996.0049 VL - 11 IS - 2 SP - 399-411 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0030081370&partnerID=MN8TOARS ER - TY - CONF TI - Bonding silicon devices on diamond heat spreaders AU - Fan, W.D. AU - Jagannadham, K. AU - Narayan, J. C2 - 1996/// C3 - Materials Research Society Symposium - Proceedings DA - 1996/// VL - 416 SP - 211-216 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0029736766&partnerID=MN8TOARS ER - TY - CONF TI - Epitaxial growth of AlN thin films on silicon and sapphire by pulsed laser deposition AU - Vispute, R.D. AU - Wu, H. AU - Jagannadham, K. AU - Narayan, J. C2 - 1996/// C3 - Materials Research Society Symposium - Proceedings DA - 1996/// VL - 395 SP - 325-330 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0029748160&partnerID=MN8TOARS ER - TY - JOUR TI - A new design of tungsten carbide tools with diamond coatings AU - Weihnacht, V. AU - Fan, W.D. AU - Jagannadham, K. AU - Narayan, J. AU - Liu, C.-T. T2 - Journal of Materials Research DA - 1996/// PY - 1996/// DO - 10.1557/JMR.1996.0282 VL - 11 IS - 9 SP - 2220-2230 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0030243331&partnerID=MN8TOARS ER - TY - JOUR TI - Influence of processing parameters on the formation of WC-Co nanocomposite powder using a polymer as carbon source AU - ZHU, YT AU - MANTHIRAM, A T2 - COMPOSITES PART B-ENGINEERING DA - 1996/// PY - 1996/// VL - 27 IS - 5 SP - 407-413 ER - TY - JOUR TI - Deformation state effects on the J(c) of BSCCO tapes AU - BLUMENTHAL, WR AU - ZHU, YT AU - LOWE, TC AU - al., T2 - PHYSICA C DA - 1996/// PY - 1996/// VL - 260 IS - 1-2 SP - 33-40 ER - TY - JOUR TI - Aluminum nitride films on different orientations of sapphire and silicon AU - Dovidenko, K. AU - Oktyabrsky, S. AU - Narayan, J. AU - Razeghi, M. AU - Razeghi, M. T2 - Journal of Applied Physics DA - 1996/// PY - 1996/// VL - 79 IS - 5 SP - 2439–2445 ER - TY - CONF TI - Fracture and fatigue in a 3-D woven carbon fiber/epoxy composite AU - Wigent, D. E. AU - Mohamed, M. H. AU - Fahmy, A. A. C2 - 1996/// C3 - International SAMPE Symposium and Exhibition DA - 1996/// ER - TY - JOUR TI - Effect of molecular architecture on DBS-induced block copolymer gels: A rheological study AU - Nunez, CM AU - Whitfield, JK AU - Mercurio, DJ AU - Ilzhoefer, , JR AU - Spontak, RJ AU - Khan, SA T2 - MACROMOLECULAR SYMPOSIA AB - Abstract Dibenzylidene sorbitol (DBS) is capable of gelling a variety of organic solvents and polymeric materials by forming a rigid, 3‐D hydrogen‐bonded network. In this work, two poly(siloxane)/poly(propylene oxide) segmented copolymers of equal composition and molecular weight, but different architectures (endblocked vs. pendant), as well as a pure poly(propylene oxide), have been gelled with DBS. We have investigated the dynamic rheological properties of these gels to ascertain the effect of copolymer architecture, PDMS comonomer and DBS concentration on network formation. DA - 1996/4// PY - 1996/4// DO - 10.1002/masy.19961060126 VL - 106 SP - 275-286 SN - 1022-1360 ER - TY - JOUR TI - Controlled black liquor viscosity reduction through salting-in AU - Roberts, JE AU - Khan, SA AU - Spontak, RJ T2 - AICHE JOURNAL AB - Abstract Black liquor viscosity increases exponentially with solids content and therefore causes processing problems for the paper industry by being a limiting factor in the Kraft pulp process. This study investigates a new approach for achieving viscosity reduction by “salting‐in” black liquor through the addition of thiocyanate salts. These salts generally increase the solubility of the polymer constituents in black liquor, leading to a decrease in its viscosity. Several thiocyanate salts capable of reducing liquor viscosity by more than two orders of magnitude have been identified, with viscosity reduction greatest at high solids content. Salting‐in of black liquor depends on the cation paired with the thiocyanate anion, as well as on solution pH and temperature. Comparative studies reveal that GuSCN is the most effective viscosity‐reducing agent of the series examined and that lignin plays an important role in the viscosity behavior of both unmodified and salted‐in black liquor at high solids concentrations. These experimental findings are interpreted in terms of the underlying principles that describe salting‐in and how it affects aqueous solution structure. DA - 1996/8// PY - 1996/8// DO - 10.1002/aic.690420821 VL - 42 IS - 8 SP - 2319-2326 SN - 0001-1541 ER - TY - JOUR TI - A novel approach to black liquor viscosity reduction using salt additives AU - Roberts, J.E. AU - Spontak, R.J. AU - Jameel, H. AU - Khan, S.A. T2 - TAPPI Journal DA - 1996/// PY - 1996/// VL - 79 IS - 8 SP - 167-174 ER - TY - JOUR TI - Dynamic rate and thickness metrology during poly-Si rapid thermal chemical vapor deposition from SiH4 using real time in situ mass spectrometry AU - Tedder, LL AU - Rubloff, GW AU - Cohaghan, BF AU - Parsons, Gregory T2 - Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films AB - Real-time in situ mass spectrometry has been applied to poly-Si rapid thermal chemical vapor deposition (RTCVD) (from SiH4) on thermally grown SiO2 as a way to determine film thickness at the end of the process and to infer dynamic deposition rate during the process for run-to-run and real-time control applications. Monitoring process ambient at 5 Torr is achieved using two-stage differential pumping of a sampling aperture in the exhaust stream, and a rapid response time (∼1 s for a ∼30 s process cycle) allows for real time sensing of reactant input, product generation, and reactant depletion. Active mass spectrometric sampling of the reaction by-product (H2 generated by SiH4 decomposition) provides a monitor of the total reaction/deposition rate during poly-Si RTCVD in the range 550–850°C. Product generation as a function of temperature is readily distinguished from reactant cracking fragments by spectral analysis. A well-defined monotonic correlation between the time-integrated H+2 product signal and the poly-Si film thickness, determined ex situ by single-point interferometry (Nanometrics), demonstrates that the integrated mass spectrometric signal can provide real-time thickness metrology. In addition, the time-dependence of product and reactant signals provides a real-time indication of detailed equipment behavior during the process. DA - 1996/// PY - 1996/// DO - 10.1116/1.579887 VL - 14 IS - 2 SP - 267-270 UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1996UA57500001&KeyUID=WOS:A1996UA57500001 ER - TY - JOUR TI - Ab initio calculation of hydrogen abstraction energetics from silicon hydrides AU - Srinivasan, E AU - Yang, H AU - Parsons, GN T2 - JOURNAL OF CHEMICAL PHYSICS AB - In this article, we present calculated energies for the abstraction of hydrogen from silicon monohydride and silicon dihydride surface bonding units by atomic hydrogen obtained using ab initio configuration interaction theory. Three and four silicon atom clusters are used to model the dihydride and monohydride units, respectively. Heats of reaction and activation energy barriers are calculated, including the vibrational energies of the initial, final, and transition states. Hydrogen abstraction from a Si–H unit (H+Si4H10→Si4H9+H2) is found to be exothermic by 9.4 kcal/mol with a transition state energy barrier of 5.5 kcal/mol when H approaches along the surface normal. The dihydride abstraction reaction, H+Si3H8→Si3H7+H2, is exothermic by 7.7 kcal/mol and has an energy barrier of 7.3 kcal/mol when H is approaching along Si–H axis. The barrier is larger for hydrogen atom approaching along the surface normal. The larger barrier for abstraction from a dihydride unit is consistent with our experimental observation of a preferential reduction in monohydride bond concentrations when hydrogenated silicon films are exposed to atomic hydrogen during plasma deposition. DA - 1996/10/1/ PY - 1996/10/1/ DO - 10.1063/1.472387 VL - 105 IS - 13 SP - 5467-5471 SN - 0021-9606 UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1996VL46900020&KeyUID=WOS:A1996VL46900020 ER - TY - JOUR TI - The effect of reversibility on the selectivity of parallel reactions in a porous catalyst AU - Roberts, GW AU - Lamb, HH T2 - CHEMICAL ENGINEERING SCIENCE AB - The selectivity of two first-order, parallel reactions, one reversible and one irreversible, can be altered substantially by the presence of an intraparticle diffusion resistance. At very large resistances, the relative selectivity approaches an asymptotic limit which depends on the kinetic, transport and thermodynamic parameters of the reaction system. It is possible for the selectivity to the product of the reversible reaction to change sign as the pore diffusion resistance increases, i.e. there can be a net formation of that product at low resistances and a net consumption at high resistances. In some cases, the rate of consumption of the product of the reversible reaction can be so high that the ratio of product concentration to reactant concentration in the bulk fluid moves away from the equilibrium ratio. This behavior contrasts markedly with that of two irreversible, first-order reactions in parallel, where the selectivity is independent of the intraparticle diffusion resistance. DA - 1996/2// PY - 1996/2// DO - 10.1016/0009-2509(95)00266-9 VL - 51 IS - 3 SP - 441-448 SN - 0009-2509 ER - TY - JOUR TI - Pd/silica cluster catalysts: Synthesis and reactivity with H-2 and C2H4 AU - Reifsnyder, SN AU - Lamb, HH T2 - CATALYSIS LETTERS DA - 1996/// PY - 1996/// DO - 10.1007/bf00815276 VL - 40 IS - 3-4 SP - 155-161 SN - 1011-372X KW - palladium catalysts KW - metal clusters KW - EXAFS spectroscopy KW - hydride KW - carbide ER - TY - PAT TI - Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy AU - Bachmann, K. J. AU - Dietz, N. AU - Miller, A. E. C2 - 1996/// DA - 1996/// PY - 1996/// ER - TY - PAT TI - Oriented diamond film structures on non-diamond substrates AU - Glass, J. T. AU - Simendinger, D. T. AU - Goeller, P. T. C2 - 1996/// DA - 1996/// PY - 1996/// ER - TY - PAT TI - Method for forming a diamond coated field emitter and device produced thereby AU - Liu, J. AU - Wolter, S. AU - McClure, M. T. AU - Stoner, B. R. AU - Glass, J. T. AU - Hren, J. J. C2 - 1996/// DA - 1996/// PY - 1996/// ER - TY - PAT TI - Diamond films on nondiamond substrates AU - Yang, P. AU - Zhu, W. AU - Glass, J. T. C2 - 1996/// DA - 1996/// PY - 1996/// ER - TY - PAT TI - Hybrid metal/metal oxide electrodes for ferroelectric capacitors AU - Kingon, A. I. AU - Al-Shareef, H. N. AU - Auciello, O. H. AU - Gifford, K. D. AU - Lichtenwalner, D. J. AU - Dat, R. C2 - 1996/// DA - 1996/// PY - 1996/// ER - TY - JOUR TI - Strain-related phenomena in GaN thin films AU - Kisielowski, C. AU - Kruger, J. AU - Ruvimov, S. AU - Suski, T. AU - Ager, J. W. AU - Jones, E. AU - Lilientalweber, Z. AU - Rubin, M. AU - Weber, E. R. AU - Bremser, M. D. AU - Davis, R. F. T2 - Physical Review. B, Condensed Matter and Materials Physics DA - 1996/// PY - 1996/// VL - 54 IS - 24 SP - 17745-17753 ER - TY - BOOK TI - Materials science: A multimedia approach AU - Russ, J. C. CN - TA404.3 .R87 1996 CD-ROM [Hill & Special Collections] DA - 1996/// PY - 1996/// SN - 0534957366 ER - TY - CONF TI - Growth of bulk AIN and GaN single crystals by sublimation AU - Balkas, C. M. AU - Sitar, Z. AU - Zheleva, T. AU - Bergman, L. AU - Shmagin, I. K. AU - Muth, J. F. AU - Kolbas, R. M. AU - Nemanich, R. AU - Davis, R. F. C2 - 1996/// C3 - III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449) CN - QC176.9 .M84 A14 1997 DA - 1996/// SP - 41-46 PB - Pittsburgh, Pa.: Materials Research Society ER - TY - JOUR TI - A comparative study of hardening theories in torsion using the Taylor polycrystal model AU - Lin, G AU - Havner, KS T2 - INTERNATIONAL JOURNAL OF PLASTICITY AB - A study of five rate-independent hardening rules (from Taylor and Elam (“The Distortion of an Aluminium Crystal during a Tensile Test”, Proc. R. Soc. Lond. (1923), A102, 643) to Bassani and Wu (“Latent Hardening in Single Crystals II. Analytical Characterization and Predictions,” Proc. R. Soc. Lond. (1991), A435, 21)) is presented based upon the classic Taylor polycrystal model in finite strain torsion. Comparisons of aggregate shear stress-strain curves, evolving crystallographic textures, yield loci, and axial stresses among the theories are made; and results are assessed against experiments on polycrystalline copper from the literature. DA - 1996/// PY - 1996/// DO - 10.1016/S0749-6419(96)00025-3 VL - 12 IS - 5 SP - 695-718 SN - 0749-6419 ER -