Materials Science and Engineering - 1999

Grimes, C. A., Qian, D., Allen, J. L., Stoyanov, P. G., Dickey, E. C., & Eklund, P. C. (1999). Magnetic and structural properties of iron nitride and iron carbide ferromagnetic nanoparticles made by laser pyrolysis. Digests of the Intermag Conference.

Mallika, K., Ramamohan, T. R., Jagannadham, K., & Komanduri, R. (1999). On the growth of polycrystalline diamond on transition metals by microwave-plasma-assisted chemical vapour deposition. Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, 79(4), 593–624. https://doi.org/10.1080/13642819908205738

Jagannadham, K. (1999). Model of interfacial thermal resistance of diamond composites. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 17(2), 373–379. https://doi.org/10.1116/1.581597

ZHU, Y. T., STAN, M., CONZONE, S. D., & al. (1999). Thermal oxidation kinetics of MoSi2-based powders. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 82(10), 2785–2790.

ZHU, Y. T., PETERSON, E. J., BALDONADO, P. S., & al. (1999). Synthesis and crystal chemistry of the new compounds GdBa4Cu3O8.5+delta and DyBa4Cu3O8.5+delta. JOURNAL OF MATERIALS RESEARCH, 14(2), 334–339.

JIANG, H. G., ZHU, Y. T., & BUTT, D. P. (1999). Oxidation kinetics of hexagonal-shaped single-crystal silicon whiskers. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 82(10), 2791–2795.

ZHU, Y. T., VALDEZ, J. A., BEYERLEIN, I. J., & al. (1999). Mechanical properties of bone-shaped-short-fiber reinforced composites. ACTA MATERIALIA, 47(6), 1767–1781.

STOLYAROV, VV, SHESTAKOVA, L. O., ZHU, Y. T., & al. (1999). Formation of metastable states in nanostructured Al- and Ti -based alloys by the SPTS technique. NANOSTRUCTURED MATERIALS, 12(5-8), 923–926.

ZHU, Y. T., BALDONADO, P. S., BINGERT, J. F., & al. (1999). Compressive anneal processing (CAP) of Bi2223 superconducting tapes. SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 12(9), 640–644.

STOLYAROV, VV, ZHU, Y. T., LOWE, T. C., & al. (1999). A two step SPD processing of ultrafine-grained titanium. NANOSTRUCTURED MATERIALS, 11(7), 947–954.

Fan, X., Dickey, E. C., Pennycook, S. J., & Sunkara, M. K. (1999). Z-contrast imaging and electron energy-loss spectroscopy analysis of chromium-doped diamond-like carbon films. Applied Physics Letters, 75(18), 2740–2742. https://doi.org/10.1063/1.125134

Koduri, P., Sunkara, M. K., Dickey, E. C., Frazier, C., & Babu, S. V. (1999). Structural and electrochemical characterisation of metal doped diamondlike carbon films. Surface Engineering, 15(5), 373–376. https://doi.org/10.1179/026708499101516713

Dickey, E. C., Frazer, C. S., Watkins, T. R., & Hubbard, C. R. (1999). Residual stresses in high-temperature ceramic eutectics. Journal of the European Ceramic Society, 19(13-14), 2503–2509. https://doi.org/10.1016/S0955-2219(99)00100-4

Dickey, E. C., Pint, B. A., Alexander, K. B., & Wright, I. G. (1999). Oxidation behavior of platinum-aluminum alloys and the effect of Zr doping. Journal of Materials Research, 14(12), 4531–4540. https://doi.org/10.1557/JMR.1999.0615

Sinnott, S. B., Andrews, R., Qian, D., Rao, A. M., Mao, Z., Dickey, E. C., & Derbyshire, F. (1999). Model of carbon nanotube growth through chemical vapor deposition. Chemical Physics Letters, 315(1-2), 25–30. https://doi.org/10.1016/S0009-2614(99)01216-6

Dickey, E. C., Fan, X., & Pennycock, S. J. (1999). Direct atomic-scale imaging of ceramic interfaces. Acta Materialia, 47(15-16), 4061–4068. https://doi.org/10.1016/S1359-6454(99)00266-9

Andrews, R., Jacques, D., Rao, A. M., Derbyshire, F., Qian, D., Fan, X., … Chen, J. (1999). Continuous production of aligned carbon nanotubes: a step closer to commercial realization. Chemical Physics Letters, 303(5-6), 467–474. https://doi.org/10.1016/S0009-2614(99)00282-1

Pennycook, S. J., Dickey, E. C., Nellist, P. D., Chisholm, M. F., Yan, Y., & Pantelides, S. T. (1999). A combined experimental and theoretical approach to atomic structure and segregation at ceramic interfaces. Journal of the European Ceramic Society, 19(13-14), 2211–2216. https://doi.org/10.1016/S0955-2219(99)00126-0

VEIRS, D. K., CONRADSON, S. D., CLARK, D. L., KEOGH, D. W., NEU, M. P., REILLY, S. D., … TRACY, J. B. (1999). The effect of oxidation state and speciation on XANES spectra of plutonium. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 217, U59. Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000079148200192&KeyUID=WOS:000079148200192

Klein, T. M., Anderson, T. M., Chowdhury, A. I., & Parsons, G. N. (1999). Plasma enhanced chemical vapor deposited silicon nitride thin films deposited at very low temperatures for thin film transistors on plastic substrates". Journal of Vacuum Science & Technology, A(17), 108–112.

Auciello, O. H., Krauss, A. R., McGuire, G. E., & Gruen, D. M. (1999). Enhanced field emission from microtip structures. Washington, DC: U.S. Patent and Trademark Office.

Aspnes, D. E., Opsal, J., & Faton, J. T. (1999). Thin film optical measurement system and method with calibrating ellipsometer. Washington, DC: U.S. Patent and Trademark Office.

Aspnes, D. E., & Opsal, J. (1999). Broadband spectroscopic rotating compensator ellipsometer. Washington, DC: U.S. Patent and Trademark Office.

Aboelfotoh, M. O., Borek, M. A., & Narayan, J. (1999). Ohmic contact to p-type GaAs using Cu3Ge. APPLIED PHYSICS LETTERS, 75(25), 3953–3955. https://doi.org/10.1063/1.125505

Jeon, J. B., Sanders, G. D., Kim, K. W., & Littlejohn, M. A. (1999). Piezoelectric and excitonic effects on optical properties of pseudomorphically strained wurtzite GaN quantum well lasers. Compound Semiconductors 1998  (Institute of Physics Conference Series;  No. 162), (162), 37–42.

Teng, C. W., Muth, J. F., Kolbas, R. M., Hassan, K. M., Sharma, A. K., Kvit, A., & Narayan, J. (1999). Quantum confinement of above-band-bap transitions in Ge quantum dots embedded in an Al2O3 or AIN matrix. In T. S. J. Piqueras & M. S. Unlu (Eds.), Optical microstructural characterization of semiconductors  (Materials Research Society proceedings, vol. 588). Pittsburgh, Pa.: Materials Research Society.

Elliott S.L., B. R. F., Humphreys C.J., T. E. J., Considine L., T. D. B., & W.B., D. B. (1999). FEG-SEM imaging of semiconductor dopant contrast. Microscopy of Semiconducting Materials 1999: Proceedings of the Institute of Physics Conference Held at Oxford University, 22-25 March, 1999, 164(1999), 727–730.

Alexandridis, P., & Spontak, R. J. (1999). [Review of Solvent-regulated ordering in block copolymers]. CURRENT OPINION IN COLLOID & INTERFACE SCIENCE, 4(2), 130–139. https://doi.org/10.1016/S1359-0294(99)00022-9

Spontak, R. J., & Alexandridis, P. (1999). [Review of Advances in self-ordering macromolecules and nanostructure design]. CURRENT OPINION IN COLLOID & INTERFACE SCIENCE, 4(2), 140–146. https://doi.org/10.1016/S1359-0294(99)00023-0

Yang, H., & Lucovsky, G. (1999, September 1). Stability of Si-O-F low-K dielectrics: attack by water molecules as function of near-neighbor Si-F bonding arrangements. JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 254, pp. 128–133. https://doi.org/10.1016/S0022-3093(99)00387-7

Jung, B., Kim, Y. D., Jeon, H., Yang, W., & Nemanich, R. J. (1999). Reduction of the transition temperature of C54TiSi(2) through a Ta interlayer. Journal of the Korean Physical Society, 35(1999 Dec.), S769–773.

Park, M., Camphausen, S. M., Myers, A. F., Barletta, P. T., Sakhrani, V., Bergman, L., … Cuomo, J. J. (1999). Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles. MATERIALS LETTERS, 41(5), 229–233. https://doi.org/10.1016/S0167-577X(99)00135-4

Yamagata, Y., Sharma, A., Narayan, J., Mayo, R. M., Newman, J. W., & Ebihara, K. (1999). Optical emission study of ablation plasma plume in the preparation of diamond-like carbon films by KrF excimer laser. JOURNAL OF APPLIED PHYSICS, 86(8), 4154–4159. https://doi.org/10.1063/1.371340

Yarykin, N., Cho, C. R., Zuhr, R., & Rozgonyi, G. (1999). In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions. Physica. B, Condensed Matter, 274(1999 Dec.), 485–488.

Yarykin, N., Cho, C. R., Zuhr, R. A., & Rozgonyi, G. A. (1999). In-situ photoexcitation-induced perturbations of defect complex concentration and distribution in silicon implanted with light and heavy ions. Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 70(1999), 397–402.

Koveshnikov, S., Choi, B., Yarykin, N., & Rozgonyi, G. (1999). Drift of interstitial iron in a space charge region of p-type Si Schottky diode. Physica. B, Condensed Matter, 274(1999 Dec.), 395–397.

Therrien, R., Lucovsky, G., & Davis, R. F. (1999, November 16). Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 176, pp. 793–796. https://doi.org/10.1002/(sici)1521-396x(199911)176:1<793::aid-pssa793>3.0.co;2-v

Shenderova, O. A., Brenner, D. W., & Yang, L. H. (1999). Atomistic simulations of structures and mechanical properties of polycrystalline diamond: Symmetrical < 001 > tilt grain boundaries. PHYSICAL REVIEW B, 60(10), 7043–7052. https://doi.org/10.1103/physrevb.60.7043

Shenderova, O. A., & Brenner, D. W. (1999). Atomistic simulations of structures and mechanical properties of < 011 > tilt grain boundaries and their triple junctions in diamond. PHYSICAL REVIEW B, 60(10), 7053–7061. https://doi.org/10.1103/physrevb.60.7053

Keister, J. W., Rowe, J. E., Kolodziej, J. J., Niimi, H., Tao, H. S., Madey, T. E., & Lucovsky, G. (1999). Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 17, pp. 1250–1257. https://doi.org/10.1116/1.581805

Lucovsky, G. (1999, September 1). Silicon oxide/silicon nitride dual-layer films: a stacked gate dielectric for the 21st century. JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 254, pp. 26–37. https://doi.org/10.1016/S0022-3093(99)00432-9

Guha, S., Bojarczuk, N. A., Johnson, M. A. L., & Schetzina, J. F. (1999). Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2. APPLIED PHYSICS LETTERS, 75(4), 463–465. https://doi.org/10.1063/1.124409

Lucovsky, G. (1999). Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide-nitride gate dielectrics with nitrided crystalline silicon-dielectric interfaces for application in advanced complementary metal-oxide-semiconductor devices. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 17, pp. 1340–1351. https://doi.org/10.1116/1.581818

Simpson, D. L., Croswell, R. T., Reisman, A., Temple, D., & Williams, C. K. (1999). Planarization processes and applications - II. B2O3/P2O5 doped GeO2-SiO2 classes. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3872–3885. https://doi.org/10.1149/1.1392566

Simpson, D. L., Croswell, R. T., Reisman, A., Temple, D., & Williams, C. K. (1999). Planarization processes and applications - I. Undoped GeO2-SiO2 glasses. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3860–3871. https://doi.org/10.1149/1.1392565

Behbehani, M. K., Piner, E. L., Liu, S. X., El-Masry, N. A., & Bedair, S. M. (1999). Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition. APPLIED PHYSICS LETTERS, 75(15), 2202–2204. https://doi.org/10.1063/1.124964

Zheleva, T. S., Ashmawi, W. M., & Jones, K. A. (1999). Pendeo-epitaxy versus lateral epitaxial overgrowth of GaN: A comparative study via finite element analysis. Physica Status Solidi. A, Applications and Materials Science, 176(1), 545–551.

Ono, T., Rozgonyi, G. A., Au, C., Messina, T., Goodall, R. K., & Huff, H. R. (1999). Oxygen precipitation behavior in 300 mm polished Czochralski silicon wafers. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3807–3811. https://doi.org/10.1149/1.1392555

Ono, T., Romanowski, A., Asayama, E., Horie, H., Sueoka, K., Tsuya, H., & Rozgonyi, G. A. (1999). Oxide precipitate-induced dislocation generation in heavily boron-doped Czochralski silicon. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(9), 3461–3465. https://doi.org/10.1149/1.1392496

Jackson, N. R., Wilder, E. A., White, S. A., Bukovnik, R., & Spontak, R. J. (1999). Modification of a thermoplastic elastomer gel through the addition of an endblock-selective homopolymer. JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, 37(15), 1863–1872. https://doi.org/10.1002/(SICI)1099-0488(19990801)37:15<1863::AID-POLB10>3.0.CO;2-X

Smith, L. L., Davis, R. F., Liu, R. J., Kim, M. J., & Carpenter, R. W. (1999). Microstructure, electrical properties, and thermal stability of Ti-based ohmic contacts to n-GaN. JOURNAL OF MATERIALS RESEARCH, 14(3), 1032–1038. https://doi.org/10.1557/JMR.1999.0137

Russell, P. E., Griffis, D. P., Shedd, G. M., Stark, T. J., & Vitarelli, J. (1999). Method for water vapor enhanced charged-particle-beam machining. Washington, DC: U.S. Patent and Trademark Office.

Aboelfotoh, M. O., Borek, M. A., & Narayan, J. (1999). Interaction of Cu and Cu3Ge thin films with Si1-xGex alloys. APPLIED PHYSICS LETTERS, 75(12), 1739–1741. https://doi.org/10.1063/1.124804

Pavlovska, A., Torres, V. M., Edwards, J. L., Bauer, E., Smith, D. J., Doak, R. B., … Davis, R. F. (1999). Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electronmicroscopy. Physica Status Solidi. A, Applications and Materials Science, 176(1), 469–473.

Kim, S. H., Kim, D. J., Im, J., Kim, C. E., & Kingon, A. I. (1999). Ferroelectric properties of new chemical solution derived SBT thin films for non-volatile memory devices. JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 16(1-2), 57–63. https://doi.org/10.1023/A:1008748718231

Buyanova, I. A., Wagner, M., Chen, W. M., Edwards, N. V., Monemar, B., Lindstrom, J. L., … Akasaki, I. (1999). Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride. Physical Review. B, Condensed Matter and Materials Physics, 60(3), 1746–1751.

Busick, D. N., Spontak, R. J., & Balik, C. M. (1999). Effects of graphite content on the morphology and barrier properties of poly(vinylidene fluoride) composites. POLYMER, 40(22), 6023–6029. https://doi.org/10.1016/S0032-3861(98)00826-X

Seok, C. S., & Murty, K. L. (1999). Effect of dynamic strain aging on mechanical and fracture properties of A516Gr70 steel. INTERNATIONAL JOURNAL OF PRESSURE VESSELS AND PIPING, 76(14-15), 945–953. https://doi.org/10.1016/S0308-0161(99)00075-7

King, S. W., Kern, R. S., Benjamin, M. C., Barnak, J. P., Nemanich, R. J., & Davis, R. F. (1999). Chemical vapor cleaning of 6H-SiC surfaces. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(9), 3448–3454. https://doi.org/10.1149/1.1392494

Young, A. P., Bandhu, R., Schafer, J., Niimi, H., & Lucovsky, G. (1999). Cathodoluminescence spectroscopy of nitrided SiO2-Si interfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 17, pp. 1258–1262. https://doi.org/10.1116/1.581806

Mantese, L., Xue, Q. K., Sakurai, T., & Aspnes, D. E. (1999). Analysis of high-index Si(001) surfaces by reflectance difference spectroscopy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 17, pp. 1652–1656. https://doi.org/10.1116/1.581867

Soman, R., Reisman, A., & Temple, D. (1999). An alternative derivation for the equilibrium constant of binary solid solution-vapor systems. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3817–3818. https://doi.org/10.1149/1.1392557

King, S. W., Carlson, E. P., Therrien, R. J., Christman, J. A., Nemanich, R. J., & Davis, R. F. (1999). X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms. JOURNAL OF APPLIED PHYSICS, 86(10), 5584–5593. https://doi.org/10.1063/1.371564

King, S. W., Davis, R. F., Ronning, C., & Nemanich, R. J. (1999). Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface. JOURNAL OF ELECTRONIC MATERIALS, 28(12), L34–L37. https://doi.org/10.1007/s11664-999-0145-4

Morrison, J. M., Codispoti, L. A., Smith, S. L., Wishner, K., Flagg, C., Gardner, W. D., … Gundersen, J. S. (1999). The oxygen minimum zone in the Arabian Sea during 1995. DEEP-SEA RESEARCH PART II-TOPICAL STUDIES IN OCEANOGRAPHY, 46(8-9), 1903–1931. https://doi.org/10.1016/S0967-0645(99)00048-X

Bohm, E., Morrison, J. M., Manghnani, V., Kim, H. S., & Flagg, C. N. (1999). The Ras al Hadd Jet: Remotely sensed and acoustic Doppler current profiler observations in 1994-1995. DEEP-SEA RESEARCH PART II-TOPICAL STUDIES IN OCEANOGRAPHY, 46(8-9), 1531–1549. https://doi.org/10.1016/S0967-0645(99)00034-X

Shi, W., Morrison, J. M., Bohm, E., & Manghnani, V. (1999). Remotely sensed features in the US JGOFS Arabian Sea Process Study. DEEP-SEA RESEARCH PART II-TOPICAL STUDIES IN OCEANOGRAPHY, 46(8-9), 1551–1575. https://doi.org/10.1016/S0967-0645(99)00035-1

Wei, Q., Narayan, R. J., Sharma, A. K., Sankar, J., & Narayan, J. (1999). Preparation and mechanical properties of composite diamond-like carbon thin films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 17(6), 3406–3414. https://doi.org/10.1116/1.582074

Yang, D., & Conrad, H. (1999). Plastic deformation of fine-grained Al2O3 in the presence of an electric field. SCRIPTA MATERIALIA, 41(4), 397–401. https://doi.org/10.1016/S1359-6462(99)00126-8

Narayanan, V., Sukidi, N., Bachmann, K. J., & Mahajan, S. (1999, December 1). Origins of defects in self assembled GaP islands grown on Si(001) and Si(111). THIN SOLID FILMS, Vol. 357, pp. 53–56. https://doi.org/10.1016/S0040-6090(99)00474-5

Niimi, H., & Lucovsky, G. (1999). Monolayer-level controlled incorporation of nitrogen at Si-SiO(2) interfaces using remote plasma processing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 17(6), 3185–3196. https://doi.org/10.1116/1.582041

Maiwa, H., Maria, J. P., Christman, J. A., Kim, S. H., Streiffer, K., & Kingon, A. I. (1999). Measurement and calculation of PZT thin film longitudinal piezoelectric coefficients. INTEGRATED FERROELECTRICS, Vol. 24, pp. 139–146. https://doi.org/10.1080/10584589908215586

Kim, D. J., Kim, S. H., Maria, J. P., & Kingon, A. I. (1999). Influences on imprint failure of SrBi2Ta2O9 thin film capacitors. Integrated Ferroelectrics, 25(1-4), 691–701.

Kim, S. H., Kim, D. J., Im, J., Streiffer, S. K., Auciello, O., Maria, J. P., & Kingon, A. I. (1999). Impact of changes in the Pt heterostructure bottom electrodes on the ferroelectric properties of SBT thin films. Integrated Ferroelectrics, 26(1-4), 955–970. https://doi.org/10.1080/10584589908215626

Sharma, A. K., Kvit, A., & Narayan, J. (1999). Growth of single crystal MgO on TiN/Si heterostructure by pulsed laser deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 17(6), 3393–3396. https://doi.org/10.1116/1.582071

Neves, B. R. A., Salmon, M. E., Russell, P. E., & Troughton, E. B. (1999). Comparative study of field emission-scanning electron microscopy and atomic force microscopy to assess self-assembled monolayer coverage on any type of substrate. MICROSCOPY AND MICROANALYSIS, 5(6), 413–419. https://doi.org/10.1017/S1431927699990475

King, S. W., Nemanich, R. J., & Davis, R. F. (1999). Wet chemical processing of (0001)(Si) 6H-SiC hydrophobic and hydrophilic surfaces. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(5), 1910–1917. https://doi.org/10.1149/1.1391864

King, S. W., Davis, R. F., Ronning, C., Benjamin, M. C., & Nemanich, R. J. (1999). Valence band discontinuity, surface reconstruction, and chemistry of (0001), (000(1)over-bar), and (1(1)over-bar-00) 2H-AlN/6H-SiC interfaces. JOURNAL OF APPLIED PHYSICS, 86(8), 4483–4490. https://doi.org/10.1063/1.371391

Lucovsky, G. (1999). Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 43(3), 301–326. https://doi.org/10.1147/rd.433.0301

Wang, K., & Reeber, R. R. (1999). Thermal residual stress modeling in AlN and GaN multilayer samples. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.18).

Godbole, V. P., Dovidenko, K., Sharma, A. K., & Narayan, J. (1999). Thermal reactions and micro-structure of TiN-AlN layered nano-composites. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 68(2), 85–90. https://doi.org/10.1016/s0921-5107(99)00154-3

Conrad, H., & Yang, D. (1999). The rate-controlling mechanism(s) during plastic deformation of polycrystalline NaCl at 0.28-0.75 T-M. Journal of Materials Science, 34(4), 821–826. https://doi.org/10.1023/A:1004537300154

Kim, S. H., Hong, J. G., Streiffer, S. K., & Kingon, A. I. (1999). The effect of RuO2/Pt hybrid bottom electrode structure on the leakage and fatigue properties of chemical solution derived Pb(ZrxTi1-x)O-3 thin films. JOURNAL OF MATERIALS RESEARCH, 14(3), 1018–1025. https://doi.org/10.1557/JMR.1999.0135

Sasaki, T., Ono, T., & Rozgonyi, G. A. (1999). Size distribution of oxide precipitates in annealed Czochralski silicon. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2(11), 589–591. https://doi.org/10.1149/1.1390915

Maillard-Schaller, E., Boyanov, B. I., English, S., & Nemanich, R. J. (1999). Role of the substrate strain in the sheet resistance stability of NiSi deposited on Si (100). JOURNAL OF APPLIED PHYSICS, 85(7), 3614–3618. https://doi.org/10.1063/1.369774

Bergman, L., Dutta, M., Balkas, C., Davis, R. F., Christman, J. A., Alexson, D., & Nemanich, R. J. (1999). Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN. JOURNAL OF APPLIED PHYSICS, 85(7), 3535–3539. https://doi.org/10.1063/1.369712

Kim, S. H., Kim, D. J., Streiffer, S. K., & Kingon, A. I. (1999). Preparation and ferroelectric properties of mixed composition layered lead zirconate titanate thin films for nonvolatile memory applications. JOURNAL OF MATERIALS RESEARCH, 14(6), 2476–2483. https://doi.org/10.1557/JMR.1999.0332

Fahmy, Y., Shen, T. D., Tucker, D. A., Spontak, R. L., & Koch, C. C. (1999). Possible evidence for the stabilization of beta-carbon nitride by high-energy ball milling. JOURNAL OF MATERIALS RESEARCH, 14(6), 2488–2499. https://doi.org/10.1557/JMR.1999.0334

Campbell, J., Fahmy, Y., & Conrad, H. (1999). Plastic deformation kinetics of fine-grained alumina. METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 30(11), 2809–2816. https://doi.org/10.1007/s11661-999-0118-5

Mantese, L., Bell, K. A., Aspnes, D. E., & Rossow, U. (1999). Photon-induced localization in optically absorbing materials. PHYSICS LETTERS A, 253(1-2), 93–97. https://doi.org/10.1016/S0375-9601(98)00953-0

Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., Jin, C., Kvit, A., … Holland, O. W. (1999). Optical and structural properties of epitaxial MgxZn1-xO alloys. APPLIED PHYSICS LETTERS, 75(21), 3327–3329. https://doi.org/10.1063/1.125340

Laurer, J. H., Khan, S. A., Spontak, R. J., Satkowski, M. M., Grothaus, J. T., Smith, S. D., & Lin, J. S. (1999). Morphology and rheology of SIS and SEPS triblock copolymers in the presence of a midblock-selective solvent. LANGMUIR, 15(23), 7947–7955. https://doi.org/10.1021/la981441n

Wei, Q., Sankar, J., Kelkar, A. D., & Narayan, J. (1999). Microstructure evolution accompanying high temperature; uniaxial tensile creep of self-reinforced silicon nitride ceramics. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 272(2), 380–388. https://doi.org/10.1016/s0921-5093(99)00497-9

Pavlovska, A., Torres, V. M., Bauer, E., Doak, R. B., Tsong, I. S. T., Thomson, D. B., & Davis, R. F. (1999). Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source. APPLIED PHYSICS LETTERS, 75(7), 989–991. https://doi.org/10.1063/1.124575

Beaman, K. L., Kononchuk, O., Koveshnikov, S., Osburn, C. M., & Rozgonyi, G. A. (1999). Lateral gettering of Fe on bulk and silicon-on-insulator wafers. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(5), 1925–1928. https://doi.org/10.1149/1.1391867

Conrad, H., Guo, Z., Fahmy, Y., & Yang, D. (1999, September). Influence of microstructure size on the plastic deformation kinetics, fatigue crack growth rate, and low-cycle fatigue of solder joints. JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 1062–1070. https://doi.org/10.1007/s11664-999-0184-x

Campbell, J., Fahmy, Y., & Conrad, H. (1999). Influence of an electric field on the plastic deformation of fine-grained Al2O3. METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 30(11), 2817–2823. https://doi.org/10.1007/s11661-999-0119-4

Kim, S. H., Kim, D. J., Hong, J., Streiffer, S. K., & Kingon, A. I. (1999). Imprint and fatigue properties of chemical solution derived Pb1-xLax(ZryTi1-y)(1-x/4)O-3 thin films. JOURNAL OF MATERIALS RESEARCH, 14(4), 1371–1377. https://doi.org/10.1557/JMR.1999.0187

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Aspnes, D. E., & Yoo, S. D. (1999, September). High-resolution spectroscopy with reciprocal-space analysis. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 215, pp. 715–723. https://doi.org/10.1002/(sici)1521-3951(199909)215:1<715::aid-pssb715>3.0.co;2-g

Smith, A. P., Spontak, R. J., Ade, H., Smith, S. D., & Koch, C. C. (1999). High-energy cryogenic blending and compatibilizing of immiscible polymers. ADVANCED MATERIALS, 11(15), 1277-+. https://doi.org/10.1002/(SICI)1521-4095(199910)11:15<1277::AID-ADMA1277>3.0.CO;2-9

Roberson, S. L., Finello, D., & Davis, R. F. (1999). High surface area molybdenum nitride electrodes. Washington, DC: U.S. Patent and Trademark Office.

Aumer, M. E., LeBoeuf, S. F., McIntosh, F. G., & Bedair, S. M. (1999). High optical quality AlInGaN by metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 75(21), 3315–3317. https://doi.org/10.1063/1.125336

Goeller, P. T., Boyanov, B. I., Sayers, D. E., Nemanich, R. J., Myers, A. F., & Steel, E. B. (1999). Germanium segregation in the Co/SiGe/Si(001) thin film system. JOURNAL OF MATERIALS RESEARCH, 14(11), 4372–4384. https://doi.org/10.1557/JMR.1999.0592

Sowers, A. T., Ward, B. L., English, S. L., & Nemanich, R. J. (1999). Field emission properties of nitrogen-doped diamond films. JOURNAL OF APPLIED PHYSICS, 86(7), 3973–3982. https://doi.org/10.1063/1.371316

Streiffer, S. K., Basceri, C., Parker, C. B., Lash, S. E., & Kingon, A. I. (1999). Ferroelectricity in thin films: The dielectric response of fiber-textured (BaxSr1-x)Ti1+yO3+z thin films grown by chemical vapor deposition. JOURNAL OF APPLIED PHYSICS, 86(8), 4565–4575. https://doi.org/10.1063/1.371404

Boissy, C., Wu, C. W., Fahmy, Y., & Conrad, H. (1999, June 30). Experimental study of the yield stress of electrorheological suspensions under AC field: Comparison with a theoretical model. INTERNATIONAL JOURNAL OF MODERN PHYSICS B, Vol. 13, pp. 1775–1782. https://doi.org/10.1142/s0217979299001788

Skierbiszewski, C., Suski, T., Leszczynski, M., Shin, M., Skowronski, M., Bremser, M. D., & Davis, R. F. (1999). Evidence for localized Si-donor state and its DX-like properties in AlGaN: Errata (vol 74, pg 3833, 1999). Applied Physics Letters, 75(20), 3225A.

More, K. L., Ailey, K. S., Lowden, R. A., & Lin, H. T. (1999). Evaluating the effect of oxygen content in BN interfacial coatings on the stability of SiC/BN/SiC composites. COMPOSITES PART A-APPLIED SCIENCE AND MANUFACTURING, Vol. 30, pp. 463–470. https://doi.org/10.1016/S1359-835X(98)00135-3

Henson, W. K., Ahmed, K. Z., Vogel, E. M., Hauser, JR, Wortman, J. J., Venables, R. D., … Venables, D. (1999). Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors. IEEE ELECTRON DEVICE LETTERS, 20(4), 179–181. https://doi.org/10.1109/55.753759

Wu, C. W., & Conrad, H. (1999, June 30). Electrorheology of suspensions of si particles with an oxide film in silicone oil. INTERNATIONAL JOURNAL OF MODERN PHYSICS B, Vol. 13, pp. 1713–1720. https://doi.org/10.1142/s0217979299001715

Oktyabrsky, S., Kalyanaraman, R., Jagannadham, K., & Narayan, J. (1999). Dislocation structure of low-angle grain boundaries in YBa2Cu3O7-delta/MgO films. JOURNAL OF MATERIALS RESEARCH, 14(7), 2764–2772. https://doi.org/10.1557/JMR.1999.0369

Conrad, H., Wu, C. W., & Tang, X. (1999, June 30). Conductivity in electrorheology. INTERNATIONAL JOURNAL OF MODERN PHYSICS B, Vol. 13, pp. 1729–1738. https://doi.org/10.1142/s0217979299001739

Cardona, M., Lastras-Martinez, L. F., & Aspnes, D. E. (1999, November 8). Comment on "Ab initio calculation of excitonic effects in the optical spectra of semiconductors". PHYSICAL REVIEW LETTERS, Vol. 83, pp. 3970–3970. https://doi.org/10.1103/PhysRevLett.83.3970

Sidorov, S. N., Bronstein, L. M., Davankov, V. A., Tsyurupa, M. P., Solodovnikov, S. P., Valetsky, P. M., … Spontak, R. J. (1999). Cobalt nanoparticle formation in the pores of hyper-cross-linked polystyrene: Control of nanoparticle growth and morphology. CHEMISTRY OF MATERIALS, 11(11), 3210–3215. https://doi.org/10.1021/cm990274p

Ono, T., Rozgonyi, G., Horie, H., Miyazaki, M., & Tsuya, H. (1999). Analysis of capacitor breakdown mechanisms due to crystal-originated pits. IEEE ELECTRON DEVICE LETTERS, 20(10), 504–506. https://doi.org/10.1109/55.791924

Kim, S. H., Kim, D. J., Lee, K. M., Park, M., Kingon, A. I., Nemanich, R. J., … Streiffer, S. K. (1999). An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique. JOURNAL OF MATERIALS RESEARCH, 14(11), 4395–4401. https://doi.org/10.1557/JMR.1999.0594

Wolfe, D. M., Hinds, B. J., Wang, F., Lucovsky, G., Ward, B. L., Xu, M., … Maher, D. M. (1999). Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 17, pp. 2170–2177. https://doi.org/10.1116/1.581745

Sheikh-Ahmad, J. Y., & Bailey, J. A. (1999, April). The wear characteristics of some cemented tungsten carbides in machining particleboard. WEAR, Vol. 225, pp. 256–266. https://doi.org/10.1016/s0043-1648(98)00361-5

Feldermann, H., Merk, R., Hofsass, H., Ronning, C., & Zheleva, T. (1999). Room temperature growth of cubic boron nitride. APPLIED PHYSICS LETTERS, 74(11), 1552–1554. https://doi.org/10.1063/1.123613

Zheleva, T. S., Smith, S. A., Thomson, D. B., Linthicum, K. J., Rajagopal, P., & Davis, R. F. (1999). Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films.

Laurer, J. H., & Spontak, R. J. (1999). P-chlorostyrene. Polymer Data Handbook, 380–386.

King, M. R., White, S. A., Smith, S. D., & Spontak, R. J. (1999). Morphology and property development in block copolymer mesogels. Langmuir, 15(1999), 7886-.

Sukidi, N., Bachmann, K. J., Narayanan, V., & Mahajan, S. (1999). Initial stages of heteroepitaxy of GaP on selected silicon surfaces. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1147–1150. https://doi.org/10.1149/1.1391736

PA O'Neil, Ozturk, M. C., Batchelor, A. D., & Maher, D. M. (1999). Effects of oxygen on selective silicon deposition using disilane. MATERIALS LETTERS, 38(6), 418–422. https://doi.org/10.1016/S0167-577X(98)00200-6

Kim, T. J., Kim, Y. D., Yoo, S. D., Aspnes, D. E., & Kossut, J. (1999). Dielectric function of Cd0.57Mg0.43Te alloy film studied by ellipsometry. Journal of the Korean Physical Society, 34(1999 June), S496–498.

Alexson, D., Bergman, L., Dutta, M., Kim, K. W., Komirenko, S., Nemanich, R. J., … Yu, S. G. (1999, March). Confined phonon and phonon-mode properties of III-V nitrides with wurtzite crystal structure. PHYSICA B, Vol. 263, pp. 510–513. https://doi.org/10.1016/s0921-4526(98)01423-9

Reifsnyder, S. N., & Lamb, H. H. (1999). Characterization of silica-supported Pd-Au clusters by X-ray absorption spectroscopy. JOURNAL OF PHYSICAL CHEMISTRY B, 103(2), 321–329. https://doi.org/10.1021/jp982893b

Diebold, A. C., Venables, D., Chabal, Y., Muller, D., Weldon, M., & Garfunkel, E. (1999). [Review of Characterization and production metrology of thin transistor gate oxide films]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2(2), 103–147. https://doi.org/10.1016/S1369-8001(99)00009-8

Lucovsky, G., Wu, Y., Niimi, H., Misra, V., & Phillips, J. C. (1999). Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics. APPLIED PHYSICS LETTERS, 74(14), 2005–2007. https://doi.org/10.1063/1.123728

Ban, I., Ozturk, M. C., Misra, V., Wortman, J. J., Venables, D., & Maher, D. M. (1999). A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1189–1196. https://doi.org/10.1149/1.1391744

Yarykin, N., Sachse, J. U., Lemke, H., & Weber, J. (1999). Silver-hydrogen interactions in crystalline silicon. Physical Review. B, Condensed Matter and Materials Physics, 59(8), 5551–5560.

Erlat, A. G., Spontak, R. J., Clarke, R. P., Robinson, T. C., Haaland, P. D., Tropsha, Y., … Vogler, E. A. (1999). SiOx gas barrier coatings on polymer substrates: Morphology and gas transport considerations. JOURNAL OF PHYSICAL CHEMISTRY B, 103(29), 6047–6055. https://doi.org/10.1021/jp990737e

Ayars, E., Aspnes, D. E., Moyer, P., & Paesler, M. A. (1999). Proximal electromagnetic shear forces. Journal of Microscopy, 196(1), 59–60. https://doi.org/10.1046/j.1365-2818.1999.00596.x

Wei, Q., Sharma, A. K., Sankar, J., & Narayan, J. (1999). Mechanical properties of diamond-like carbon composite thin films prepared by pulsed laser deposition. COMPOSITES PART B-ENGINEERING, 30(7), 675–684. https://doi.org/10.1016/S1359-8368(99)00035-9

Maiwa, H., Christman, J. A., Kim, S. H., Kim, D. J., Maria, J. P., Chen, B., … Kingon, A. I. (1999, September). Measurement of piezoelectric displacements of Pb(Zr, Ti)O-3 thin films using a double-beam interferometer. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Vol. 38, pp. 5402–5405. https://doi.org/10.1143/jjap.38.5402

Torres, V. M., Edwards, J. L., Wilkens, B. J., Smith, D. J., Doak, R. B., & Tsong, I. S. T. (1999). Influence of 6H-SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers. APPLIED PHYSICS LETTERS, 74(7), 985–987. https://doi.org/10.1063/1.123431

Neves, B. R. A., Vilela, J. M. C., Russell, P. E., Reis, A. C. C., & Andrade, M. S. (1999). Imaging micro-cracks in gold films: a comparative study of scanning tunneling and atomic force microscopies. ULTRAMICROSCOPY, 76(1-2), 61–67. https://doi.org/10.1016/S0304-3991(98)00071-0

Klein, T. M., Anderson, T. M., Chowdhury, A. I., & Parsons, G. N. (1999). Hydrogenated silicon nitride thin films deposited between 50 and 250 degrees C using nitrogen/silane mixtures with helium dilution. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 17, pp. 108–112. https://doi.org/10.1116/1.582104

Boyanov, B. I., Goeller, P. T., Sayers, D. E., & Nemanich, R. J. (1999). Growth of epitaxial CoSi2 on SiGe(001). JOURNAL OF APPLIED PHYSICS, 86(3), 1355–1362. https://doi.org/10.1063/1.370894

Cho, C. R., Yarykin, N., Brown, R. A., Kononchuk, O., Rozgonyi, G. A., & Zuhr, R. A. (1999). Evolution of deep-level centers in p-type silicon following ion implantation at 85 K. APPLIED PHYSICS LETTERS, 74(9), 1263–1265. https://doi.org/10.1063/1.123519

Klein, T. M., Niu, D., Epling, W. S., Li, W., Maher, D. M., Hobbs, C. C., … Parsons, G. N. (1999). Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100). APPLIED PHYSICS LETTERS, 75(25), 4001–4003. https://doi.org/10.1063/1.125519

Walker, T. A., Raghavan, SR, Royer, JR, Smith, S. D., Wignall, G. D., Melnichenko, Y., … Spontak, R. J. (1999). Enhanced miscibility of low-molecular-weight polystyrene polyisoprene blends in supercritical CO2. JOURNAL OF PHYSICAL CHEMISTRY B, 103(26), 5472–5476. https://doi.org/10.1021/jp990551f

Roberson, S. L., Finello, D., & Davis, R. F. (1999). Electrochemical evaluation of molybdenum nitride electrodes in H2SO4 electrolyte. JOURNAL OF APPLIED ELECTROCHEMISTRY, 29(1), 75–80. https://doi.org/10.1023/A:1003460529736

Croswell, R. T., Reisman, A., Simpson, D. L., Temple, D., & Williams, C. K. (1999). Differential thermal analysis of glass mixtures containing SiO2, GeO2, B2O3, and P2O5. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(12), 4569–4579. https://doi.org/10.1149/1.1392676

Wu, Y. D., Xiang, Q., Bang, D., Lucovsky, G., & Lin, M. R. (1999). Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides. IEEE ELECTRON DEVICE LETTERS, 20(6), 262–264. https://doi.org/10.1109/55.767092

Yarykin, N., Cho, C. R., Rozgonyi, G. A., & Zuhr, R. A. (1999). The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K. APPLIED PHYSICS LETTERS, 75(2), 241–243. https://doi.org/10.1063/1.124335

Yang, H., Niimi, H., Wu, Y., Lucovsky, G., Keister, J. W., & Rowe, J. E. (1999, September). The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics. MICROELECTRONIC ENGINEERING, Vol. 48, pp. 307–310. https://doi.org/10.1016/s0167-9317(99)00395-0

Lucovsky, G., & Phillips, J. C. (1999, September). The effects of chemical bonding and band offset constraints at Si-dielectric interfaces on the integration of alternative high-K dielectrics into aggressively-scaled CMOS Si devices. MICROELECTRONIC ENGINEERING, Vol. 48, pp. 291–294. https://doi.org/10.1016/s0167-9317(99)00391-3

Boyanov, B. I., Goeller, P. T., Sayers, D. E., & Nemanich, R. J. (1999, May 1). The effect of germanium on the Co-SiGe thin-film reaction. JOURNAL OF SYNCHROTRON RADIATION, Vol. 6, pp. 521–523. https://doi.org/10.1107/S0909049599000060

Wu, Y., Niimi, H., Yang, H., Lucovsky, G., & Fair, R. B. (1999). Suppression of boron transport out of p(+) polycrystalline silicon at polycrystalline silicon dielectric interfaces. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1813–1822.

Bidnyk, S., Little, B. D., Schmidt, T. J., Cho, Y. H., Krasinski, J., Song, J. J., … Davis, R. F. (1999). Stimulated emission in GaN thin films in the temperature range of 300-700 K. JOURNAL OF APPLIED PHYSICS, 85(3), 1792–1795. https://doi.org/10.1063/1.369325

Danielsson, E., Zetterling, C. M., Ostling, M., Breitholtz, B., Linthicum, K., Thomson, D. B., … Davis, R. F. (1999). Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes. Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 61-2(1999 July 30), 320–324.

Murty, K. L. (1999). Role and significance of source hardening in radiation embrittlement of iron and ferritic steels. JOURNAL OF NUCLEAR MATERIALS, 270(1-2), 115–128. https://doi.org/10.1016/S0022-3115(98)00766-1

Bergman, L., Alexson, D., Murphy, P. L., Nemanich, R. J., Dutta, M., Stroscio, M. A., … Davis, R. F. (1999). Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure. PHYSICAL REVIEW B, 59(20), 12977–12982. https://doi.org/10.1103/physrevb.59.12977

Srivastava, D., Brenner, D. W., Schall, J. D., Ausman, K. D., Yu, M. F., & Ruoff, R. S. (1999). Predictions of enhanced chemical reactivity at regions of local conformational strain on carbon nanotubes: Kinky chemistry. JOURNAL OF PHYSICAL CHEMISTRY B, 103(21), 4330–4337. https://doi.org/10.1021/jp990882s

Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., Smith, T., … Davis, R. (1999). Pendeo-epitaxy of gallium nitride thin films. Applied Physics Letters, 75(2), 196–198. https://doi.org/10.1063/1.124317

Bachmann, K. J., Banks, H. T., Hopfner, C., Kepler, G. M., LeSure, S., McCall, S. D., & Scroggs, J. S. (1999). Optimal design of a high pressure organometallic chemical vapor deposition reactor. MATHEMATICAL AND COMPUTER MODELLING, 29(8), 65–80. https://doi.org/10.1016/S0895-7177(99)00071-0

Parker, C. A., Roberts, J. C., Bedair, S. M., Reed, M. J., Liu, S. X., El-Masry, N. A., & Robins, L. H. (1999). Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. APPLIED PHYSICS LETTERS, 75(17), 2566–2568. https://doi.org/10.1063/1.125079

Neves, B. R. A., Leonard, D. N., Salmon, M. E., Russell, P. E., & Troughton, E. B. (1999). Observation of topography inversion in atomic force microscopy of self-assembled monolayers. NANOTECHNOLOGY, 10(4), 399–404. https://doi.org/10.1088/0957-4484/10/4/307

Chao, Y. C., Stagarescu, C. B., Downes, J. E., Ryan, P., Smith, K. E., Hanser, D., … Davis, R. F. (1999). Observation of highly dispersive surface states on GaN(0001)1x1. Physical Review. B, Condensed Matter and Materials Physics, 59(24), R15586–15589.

Niimi, H., & Lucovsky, G. (1999). Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked 'N-O-N' gate dielectrics. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(6), 2610–2621.

Venkatasubramanian, R., Colpitts, T., B O'Quinn, Liu, S., El-Masry, N., & Lamvik, M. (1999). Low-temperature organometallic epitaxy and its application to superlattice structures in thermoelectrics. APPLIED PHYSICS LETTERS, 75(8), 1104–1106. https://doi.org/10.1063/1.124610

Mathew, M. D., Lietzan, L. M., Murty, K. L., & Shah, V. N. (1999). Low temperature aging embrittlement of CF-8 stainless steel. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 269(1-2), 186–196. https://doi.org/10.1016/s0921-5093(99)00140-9

Misra, V., Lazar, H., Wang, Z., Wu, Y., Niimi, H., Lucovsky, G., … Hauser, J. R. (1999). Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836–1839.

Hanser, A. D., Nam, O. H., Bremser, M. D., Thomson, D. B., Gehrke, T., Zheleva, T. S., & Davis, R. F. (1999, March). Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN. DIAMOND AND RELATED MATERIALS, Vol. 8, pp. 288–294. https://doi.org/10.1016/S0925-9635(98)00341-0

Muth, J. F., Kolbas, R. M., Sharma, A. K., Oktyabrsky, S., & Narayan, J. (1999). Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition. JOURNAL OF APPLIED PHYSICS, 85(11), 7884–7887. https://doi.org/10.1063/1.370601

Wang, B. C., Tropsha, Y., Montgomery, D. B., Vogler, E. A., & Spontak, R. J. (1999). Enhanced barrier performance of SiOx-modified polymer substrates: some morphological considerations. JOURNAL OF MATERIALS SCIENCE LETTERS, 18(4), 311–315. https://doi.org/10.1023/A:1006687324051

Horie, Y., & Yano, K. (1999). Discrete element modeling of shock compression of hexagonal boron nitride powder with and without copper addition. JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 85(1-3), 109–114. https://doi.org/10.1016/S0924-0136(98)00272-6

Aboelfotoh, M. O., & Doyle, J. P. (1999). Defect energy levels in electron-irradiated and deuterium- implanted 6H silicon carbide. Physical Review. B, Condensed Matter and Materials Physics, 59(16), 10823–10829.

Therrien, R., Niimi, H., Gehrke, T., Lucovsky, G., & Davis, R. (1999, September). Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces. MICROELECTRONIC ENGINEERING, Vol. 48, pp. 303–306. https://doi.org/10.1016/s0167-9317(99)00394-9

Murty, K. L., Miraglia, P. Q., Mathew, M. D., Shah, V. N., & Haggag, F. M. (1999). Characterization of gradients in mechanical properties of SA-533B steel welds using ball indentation. INTERNATIONAL JOURNAL OF PRESSURE VESSELS AND PIPING, 76(6), 361–369. https://doi.org/10.1016/S0308-0161(99)00006-X

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PA O'Neil, Ozturk, M. C., Batchelor, A. D., Xu, M. M., & Maher, D. M. (1999). Quality of selective silicon epitaxial films deposited using disilane and chlorine. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2337–2343. https://doi.org/10.1149/1.1391937

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Hassan, K. M., Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., & Kolbas, R. M. (1999). Optical and structural studies of Ge nanocrystals embedded in AlN matrix fabricated by pulsed laser deposition. APPLIED PHYSICS LETTERS, 75(9), 1222–1224. https://doi.org/10.1063/1.124648

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PA O'Neil, Ozturk, M. C., Batchelor, A. D., Venables, D., & Maher, D. M. (1999). Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3079–3086. https://doi.org/10.1149/1.1392053

PA O'Neil, Ozturk, M. C., Batchelor, A. D., Venables, D., Xu, M. M., & Maher, D. M. (1999). Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3070–3078. https://doi.org/10.1149/1.1392052

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Muth, J. F., Brown, J. D., Johnson, M. A. L., Yu, Z. H., Kolbas, R. M., Cook, J. W., & Schetzina, J. F. (1999). Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

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Johnson, M. A. L., Yu, Z. H., Brown, J. D., Koeck, F. A., El-Masry, N. A., Kong, H. S., … Schetzina, J. F. (1999). A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10). https://doi.org/10.1557/s1092578300003100

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Im, J., Auciello, O., Krauss, A. R., Gruen, D. M., Chang, R. P. H., Kim, S. H., & Kingon, A. I. (1999). Studies of hydrogen-induced degradation processes in SrBi2Ta2O9 ferroelectric film-based capacitors. APPLIED PHYSICS LETTERS, 74(8), 1162–1164. https://doi.org/10.1063/1.123474

Brown, R. A., Kononchuk, O., & Rozgonyi, G. A. (1999). Simulation of metallic impurity gettering in silicon by MeV ion implantation. Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors, and Associated Equipment, 148(1-4), 322–328.

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Kaminska, E., Piotrowska, A., Jasinski, J., Kozubowski, J., Barcz, A., Golaszewska, K., … Bremser, M. D. (1999). Ni/Si-based contacts to GaN: Thermally activated structural transformations leading to ohmic behavior. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G9.9).

Oktyabrsky, S., Dovidenko, K., Sharma, A. K., Joshkin, V., & Narayan, J. (1999). Crystal structure and defects in nitrogen-deficient GaN. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G6.43).

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Sinnott, S. B., Shenderova, O. A., White, C. T., & Brenner, D. W. (1999). Mechanical properties of nanotubule fibers and composites determined from theoretical calculations and simulations (vol 36, pg 1, 1998). Carbon, 37(2), 347.

Spontak, R. J., Roberts, J. E., Prevysh, V. A., & Khan, S. A. (1999). Method of reducing the viscosity of a black liquor using thiocyanate salt. Washington, DC: U.S. Patent and Trademark Office.

Wu, Y., & Lucovsky, G. (1999). Improvement of gate dielectric reliability for p plus poly MOS devices using remote PECVD top nitride deposition ultra-thin (2.4-6 nm) gate oxides. MICROELECTRONICS RELIABILITY, 39(3), 365–372. https://doi.org/10.1016/S0026-2714(98)00244-3

Skierbiszewski, C., Suski, T., Leszczynski, M., Shin, M., Skowronski, M., Bremser, M. D., & Davis, R. F. (1999). Evidence for localized Si-donor state and its metastable properties in AlGaN. APPLIED PHYSICS LETTERS, 74(25), 3833–3835. https://doi.org/10.1063/1.124195

PA O'Neil, Ozturk, M. C., Batchelor, A. D., Xu, M. M., & Maher, D. M. (1999). Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2344–2352. https://doi.org/10.1149/1.1391938

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Johnson, M. A. (1999). Pre-television stereotypes: Mexicans in US newsreels, 1919-1932. CRITICAL STUDIES IN MASS COMMUNICATION, 16(4), 417–435. https://doi.org/10.1080/15295039909367109

Smith, A. P., & Spontak, R. J. (1999). P-methylstyrene. Polymer Data Handbook, 688–695.

Edwards, N. V., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Bremser, M. D., Davis, R. F., … Monemar, B. (1999). Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78). https://doi.org/10.1557/s1092578300002830

Park, M., McGregor, D. R., Bergman, L., Nemanich, R. J., Hren, J. J., Cuomo, J. J., … Zhirnov, VV. (1999). Raman analysis and field emission study of ion beam etched diamond films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 17, pp. 700–704. https://doi.org/10.1116/1.590622

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Beaman, K. L., Glasko, J. M., Koveshnikov, S. V., & Rozgonyi, G. A. (1999). Gettering at vacancy and interstitial-rich regions in MeV ion implanted silicon. Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 70(1999), 247–252.

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Oktyabrsky, S., Dovidenko, K., Sharma, A. K., Narayan, J., & Joshkin, V. (1999). Cubic GaN formation under nitrogen-deficient conditions. APPLIED PHYSICS LETTERS, 74(17), 2465–2467. https://doi.org/10.1063/1.123882

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