Materials Science & Engineering - 2003

Bae, C., & Lucovsky, G. (2003). Oxide formation and passivation for micro- and nano-electronic devices. Applied Surface Science, 212(2003 May 15), 644–648. https://doi.org/10.1016/S0169-4332(03)00139-9

Bae, C., Rayner, G. B., & Lucovsky, G. (2003). Device-quality GaN-dielectric interfaces by 300 degrees C remote plasma processing. Applied Surface Science, 216(04-Jan), 119–123. https://doi.org/10.1016/S0169-4332(03)00497-5

Chugh, A., Tiwari, A., Kvit, A., & Narayan, J. (2003). A  novel technique for making self-encapsulated and self-aligned copper films. Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 103(1), 45–48. https://doi.org/10.1016/s0921-5107(03)00148-x

Gruverman, A., Rodriguez, B. J., Kingon, A. I., Nemanich, R. J., Tagantsev, A. K., Cross, J. S., & Tsukada, M. (2003). Mechanical stress effect on imprint behavior of integrated ferroelectric capacitors. Applied Physics Letters, 83(4), 728–730. https://doi.org/10.1063/1.1593830

Hinkle, C., & Lucovsky, G. (2003). Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3. Applied Surface Science, 216(04-Jan), 124–132. https://doi.org/10.1016/S0169-4332(03)00499-9

Kim, D. J., Maria, J. P., Kingon, A. I., & Streiffer, S. K. (2003). Evaluation of intrinsic and extrinsic contributions to the piezoelectric properties of Pb(Zr1-xTX)O-3 thin films as a function of composition. Journal of Applied Physics, 93(9), 5568–5575. https://doi.org/10.1063/1.1566478

Kim, T. J., Ghong, T. H., Kim, Y. D., Kim, S. J., Aspnes, D. E., Mori, T., … Koo, B. H. (2003). Dielectric functions of InxGa1-xAs alloys. Physical Review. B, Condensed Matter and Materials Physics, 68(11). https://doi.org/10.1103/physrevb.68.115323

Lucovsky, G. (2003). Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects. Microelectronics Reliability, 43(11-Sep), 1417–1426. https://doi.org/10.1016/S0026-2714(03)00253-1

Lucovsky, G., & Rubloff, G. (2003). American Vacuum Society leadership in electronic materials processing: Past, present, and future. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 21(5), S175–181. https://doi.org/10.1116/1.1599866

Lucovsky, G., Rayner, B., Zhang, Y., Appel, G., & Whitten, J. (2003). Band offset energies in zirconium silicate Si alloys. Applied Surface Science, 216(04-Jan), 215–222. https://doi.org/10.1016/S0169-4332(03)00429-X

Lucovsky, G., Raynor, G. B., Zhang, Y., Fulton, C. C., Nemanich, R. J., Appel, G., … Whitten, J. L. (2003). Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices. Applied Surface Science, 212(2003 May 15), 563–569. https://doi.org/10.1016/S0169-4332(03)00055-2

Preble, E. A., Miraglia, P. Q., Roskowski, A. M., Vetter, W. M., Dudley, M., & Davis, R. F. (2003). Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers. Journal of Crystal Growth, 258(1/2), 75–83. https://doi.org/10.1016/S0022-0248(03)01515-X

Rozgonyi, G. A., Karoui, A., Kvit, A., & Duscher, G. (2003). Nano-scale analysis of precipitates in nitrogen-doped Czochralski silicon. Microelectronic Engineering, 66(1-4), 305–313. https://doi.org/10.1016/S0167-9317(02)00923-1

Smith, T. P., Mecouch, W. J., Miraglia, P. Q., Roskowski, A. M., Hartlieb, P. J., & Davis, R. F. (2003). Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy. Journal of Crystal Growth, 257(3/4), 255–262. https://doi.org/10.1016/S0022-0248(03)01469-6

Sremaniak, L. S., Whitten, J. L., Menon, M., & Lucovsky, G. (2003). Contributions to the infrared effective charges of oxides and chalcogenides from equilibrium charge and dynamic charge redistribution during normal mode motions. Applied Surface Science, 212(2003 May 15), 839–843. https://doi.org/10.1016/S0169-4332(03)00087-4

Suh, Y. S., Heuss, G. P., Lee, J. H., & Misra, V. (2003). Effect of the composition on the electrical properties of TaSixNy metal gate electrodes. IEEE Electron Device Letters, 24(7), 439–441. https://doi.org/10.1109/LED.2003.814009

Usov, I., Parikh, N., Kudriavtsev, Y., Asomoza, R., Reitmeier, Z., & Davis, R. (2003). GaN evaporation and enhanced diffusion of Ar during high- temperature ion implantation. Journal of Applied Physics, 93(9), 5140–5142. https://doi.org/10.1063/1.1564271

Wang, J. H., Griffis, D. P., Garcia, R., & Russell, P. E. (2003). Etching characteristics of chromium thin films by an electron beam induced surface reaction. Semiconductor Science and Technology, 18(4), 199–205. https://doi.org/10.1088/0268-1242/18/4/302

Wilder, E. A., Hall, C. K., Khan, S., & Spontak, R. (2003). Effects of composition and matrix polarity on network development in organogels of poly(ethylene glycol) and dibenzylidene sorbitol. Langmuir, 19(15), 6004–6013. https://doi.org/10.1021/la027081s

Zhu, X. K., Zhang, X., Wang, H., Sergueeva, A. V., Mukherjee, A. K., Scattergood, R. O., … Koch, C. C. (2003). Synthesis of bulk nanostructured Zn by combinations of cryomilling and powder consolidation by room temperature milling: optimizing mechanical properties. Scripta Materialia, 49(5), 429–433. https://doi.org/10.1016/S1359-6462(03)00297-5