Materials Science and Engineering - 1983

KAMIENIECKI, E., & PARSONS, G. N. (1983). CHARACTERIZATION OF SEMICONDUCTOR ELECTROLYTE SYSTEMS BY SURFACE PHOTO-VOLTAGE MEASURED CAPACITANCE. Journal of the Electrochemical Society, 130(8), C329. Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1983RC47600386&KeyUID=WOS:A1983RC47600386

Jagannadham, K., & Marcinkowski, M. J. (1983). Unified theory of fracture. Aedermannsdorf, Switzerland: Trans Tech Publications.

Jagannadham, K. (1983). A mechanism of void growth in the region of the plastic zone ahead of a crack-tip. International Journal of Fracture, 22(1), 41–63. https://doi.org/10.1007/BF00960098

Jagannadham, K. (1983). Steady state vacancy concentration around a plastic crack. Metallurgical Transactions A, 14(8), 1615–1624. https://doi.org/10.1007/BF02654389

Jagannadham, K., & Marcinkowski, M. J. (1983). Discrete dislocation analysis and path dependent plasticity. Engineering Fracture Mechanics, 18(1), 171–192. https://doi.org/10.1016/0013-7944(83)90106-6

Jagannadham, K. (1983). The influence of the crack tip stress field on the nucleation and growth of voids. Materials Science and Engineering, 60(2), 95–108. https://doi.org/10.1016/0025-5416(83)90178-7

Aspnes, D. E., & Studna, A. A. (1983). Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV. Physical Review B, 27(2), 985–1009. https://doi.org/10.1103/physrevb.27.985

Narayan, J., Holland, O. W., & Appleton, B. R. (1983). Solid‐phase‐epitaxial growth and formation of metastable alloys in ion implanted silicon. Journal of Vacuum Science & Technology B, 1(4), 871–887.

Holland, O. W., Appleton, B. R., & Narayan, J. (1983). Ion implantation damage and annealing in germanium. Journal of Applied Physics, 54(5), 2295–2301.

Kamieniecki, E., & Parsons, G. N. (1983). Characterization of semiconductor electrolyte systems by surface photovoltage measured capacitance. Journal of the Electrochemical Society, 130(8), C329.

Aspnes, D. E., & Studna, A. A. (1983). Method of preparing semiconductor surfaces. Washington, DC: U.S. Patent and Trademark Office.

HAVNER, K. S., & SALPEKAR, S. A. (1983). THEORETICAL LATENT HARDENING OF CRYSTALS IN DOUBLE-SLIP .2. FCC CRYSTALS SLIPPING ON DISTINCT PLANES. JOURNAL OF THE MECHANICS AND PHYSICS OF SOLIDS, 31(3), 231–250. https://doi.org/10.1016/0022-5096(83)90024-8