Materials Science and Engineering - 1993

MICROSTRUCTURAL EVOLUTION AND SUBSTRATE SELECTIVITY IN PECVD MU-C-SI. (1993). In Microcrystalline Semiconductors : Materials Science & Devices (Vol. 283, pp. 495–500). Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1993BY10P00077&KeyUID=WOS:A1993BY10P00077

ESSER, A., HEESEL, H., KURZ, H., WANG, C., PARSONS, G. N., & LUCOVSKY, G. (1993). FEMTOSECOND SPECTROSCOPIC STUDY OF ULTRAFAST CARRIER RELAXATION IN HYDROGENATED AMORPHOUS-SILICON A-SI-H. Journal of Applied Physics, 73(3), 1235–1239. https://doi.org/10.1063/1.353263

ESSER, A., HEESEL, H., KURZ, H., WANG, C., PARSONS, G. N., & LUCOVSKY, G. (1993). TRANSPORT-PROPERTIES OF OPTICALLY GENERATED FREE-CARRIERS IN HYDROGENATED AMORPHOUS-SILICON IN THE FEMTOSECOND TIME REGIME. Physical Review B, 47(7), 3593–3597. https://doi.org/10.1103/PhysRevB.47.3593

Jagannadham, K. (1993). Structure and properties of grain boundaries in high-Tc superconductors. In J. Narayan (Ed.), AIP Conference Proceedings (Vol. 273, pp. 37–49).

Tiwari, P., Singh, R., & Narayan, J. (1993). Evaluation of physical and electrical properties of CoSi2 thin films on (100)Si grown by pulsed laser deposition. Philosophical Magazine B, 68(3), 413–420. https://doi.org/10.1080/13642819308215296

Jagannadham, K., Armstrong, R. W., & Hirth, J. P. (1993). Deformation twinning in high-hydrogen-solubility refractory alloy crystals. Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, 68(2), 419–451. https://doi.org/10.1080/01418619308221213

Chowdhury, R., Chen, X., Jagannadham, K., & Narayan, J. (1993). Laser processing, characterization, and modeling of epitaxial Si/TiN/Si (100) heterostructures. Materials Research Society Symposium Proceedings, 285, 501–506. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0027313965&partnerID=MN8TOARS

Zheleva, T. S., Jagannadham, K., Kumar, A., & Narayan, J. (1993). Epitaxial growth of TiN on GaAs(100) by pulsed laser deposition. Materials Research Society Symposium Proceedings, 285, 343–348. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0027268780&partnerID=MN8TOARS

Zheleva, T. S., Jagannadham, K., & Narayan, J. (1993). Epitaxial growth in large lattice mismatch systems: characteristics of domain epitaxy. Materials Research Society Symposium Proceedings, 280, 393–398. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0027884438&partnerID=MN8TOARS

ZHU, Y. T., & ZONG, G. S. (1993). ON THE APPLICATION OF THE STATISTICAL STRENGTH MODEL OF FIBER-REINFORCED COMPOSITES. JOURNAL OF COMPOSITE MATERIALS, 27(9), 944–959.

MANTHIRAM, A., & ZHU, Y. T. (1993). CHEMISTRY OF ELECTRON-DOPED LN2-XCEXCUO4 SUPERCONDUCTORS. JOURNAL OF ELECTRONIC MATERIALS, 22(10), 1195–1198.

Aspnes, D. E. (1993). Minimal-data approaches for determining outer-layer dielectric responses of films from kinetic reflectometric and ellipsometric measurements. Journal of the Optical Society of America A, 10(5), 974. https://doi.org/10.1364/josaa.10.000974

Chen, X., & Narayan, J. (1993). Effect of the chemical nature of transition‐metal substrates on chemical‐vapor deposition of diamond. Journal of Applied Physics, 74(6), 4168–4173.

Esser, A. H., H., K., H., W., C., P., G.N., & Lucovsky, G. (1993). Transport processes of optically generated free carriers in amorphous silicon, a-Si:H in the femtosecond time regime. Physical Review, B(47), 3593.

Kurz H., E. A., Heesel H., L. G., Wang C., & G., P. (1993). Optical-detection of photoconductivity in hydrogenated amorphous silicon, a-Si:H, in the subpicosecond time-domain. Journal of Non-Crystalline Solids, 166, 575–578.

Esser, A. H., H., K., H., W., C., P., G.N., & Lucovsky, G. (1993). Femtosecond spectroscopic study of ultrafast carrier relaxation in hydrogenated amorphous silicon a-Si:H. Journal of Applied Physics, 73, 1235.

LAMB, H. H. (1993). ENGINEERING CATALYST SURFACES WITH METAL-CARBONYL CLUSTERS. CATALYSIS TODAY, 18(1), 3–19. https://doi.org/10.1016/0920-5861(93)80100-f

Robert F. Davis. (1993). Diamond films and coatings development, properties, and applications. Park Ridge, NJ: Noyes Pub.

Humphreys, T. P., Nemanich, R. J., & Das, K. (1993). High temperature rectifying contact. Washington, DC: U.S. Patent and Trademark Office.

Narayan, J. (1993). Method for synthesis and processing of continuous monocrystalline diamond thin films. Washington, DC: U.S. Patent and Trademark Office.

Narayan, J., & Fan, J. C. (1993). Dislocation density reduction in gallium arsenide on silicon heterostructures. Washington, DC: U.S. Patent and Trademark Office.

Pollack, F. H., Shen, H. E., & Lucovsky, G. (1993). Method for determining interface properties of semiconductor materials by photoreflectance. Washington, DC: U.S. Patent and Trademark Office.

Wolter, S. D., Stoner, B. R., Glass, J. T., Ellis, P. J., Buhaenko, D. S., Jenkins, C. E., & Southworth, P. (1993). Textured growth of diamond on silicon via insitu carburization and bias-enhanced nucleation. Applied Physics Letters, 62(11), 1215–1217.

MASNARI, N. A., HAUSER, JR, LUCOVSKY, G., MAHER, D. M., MARKUNAS, R. J., OZTURK, M. C., & WORTMAN, J. J. (1993). CENTER FOR ADVANCED ELECTRONIC MATERIALS PROCESSING. PROCEEDINGS OF THE IEEE, 81(1), 42–59. https://doi.org/10.1109/JPROC.1993.752025

HAVNER, K. S. (1993). TAYLOR,G.I., REVISITED - THE CONE OF UNEXTENDED DIRECTIONS IN DOUBLE SLIP. INTERNATIONAL JOURNAL OF PLASTICITY, 9(2), 159–179. https://doi.org/10.1016/0749-6419(93)90027-N