Materials Science & Engineering - 2000

Fan, X., Dickey, E. C., & Pennycook, S. J. (2000). Study of chromium-doped diamond-like carbon by Z-contrast imaging and electron energy loss spectroscopy. MRS Online Proceedings Library, 593, 329–334.

Jacques, D., Villain, S., Rao, A. M., Andrews, R., Derbyshire, F., Dickey, E. C., & Qian, D. L. (2000). Synthesis of multiwalled carbon nanotubes. MRS Online Proceedings Library, 593, 15–20.

Dickey, E. C., Pint, B. A., Alexander, K. B., & Wright, I. G. (2000). The effect of platinum on the growth and adhesion of alpha-Al2O3 scales. HIGH TEMPERATURE SURFACE ENGINEERING, 115–128.

Fan, X., Dickey, E. C., Eklund, P., Williams, K., Grigorian, L., Puretzky, A., … Pennycook, S. J. (2000). Direct observation of intercalant and catalyst particle in single wall carbon nanotubes. MRS Online Proceedings Library, 593, 129–134.

Sunkara, M. K., Koduri, P., Dickey, E. C., & Fan, X. (2000). Behavior of redox reactions on metal-doped diamondlike carbon films. DIAMOND MATERIALS VI, 99(32), 448–457.

Yu, P. G., & Havner, K. (2000). Numerical studies of nonuniform deformation, stress state evolution, and subgrain formation in bicrystals in (110) channel die compression. Journal of the Mechanics and Physics of Solids, 49(1), 173–208. https://doi.org/10.1016/s0022-5096(00)00021-1

JIANG, H. G., VALDEZ, J. A., ZHU, Y. T., & al. (2000). The strength and toughness of cement reinforced with bone-shaped steel wires. COMPOSITES SCIENCE AND TECHNOLOGY, 60(9), 1753–1761.

STOLYAROV, VV, ZHU, Y. T., LOWE, T. C., & al. (2000). Processing nanocrystalline Ti and its nanocomposites from micrometer-sized Ti powder using high pressure torsion. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 282(1-2), 78–85.

Overview and outlook for materials processed by severe plastic deformation. (2000). In Investigations and Applications of Severe Plastic Deformation (Vol. 80, pp. 347–356).

ZHU, Y. T., & LOWE, T. C. (2000). Observations and issues on mechanisms of grain refinement during ECAP process. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 291(1-2), 46–53.

JIANG, H. G., ZHU, Y. T., BUTT, D. P., & al. (2000). Microstructural evolution, microhardness and thermal stability of HPT-processed Cu. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 290(1-2), 128–138.

WANG, H. L., ROMERO, R. J., MATTES, B. R., & al. (2000). Effect of processing conditions on the properties of high molecular weight conductive polyaniline fiber. JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, 38(1), 194–204.

ZHU, Y. T., & LOWE, T. C. (2000). Application of, and precautions for the use of, the rule of additivity in phase transformation. METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE, 31(4), 675–682.

HUANG, J. Y., & ZHU, Y. T. (2000). Advances in the synthesis and characterization of boron nitride. DEFECTS AND DIFFUSION IN CERAMICS, 186-1, 1–32.

Dickey, E. C., Pint, B. A., Alexander, K. B., & Wright, I. G. (2000). The effect of platinum on the growth and adhesion of alpha-Al2O3 scales. In High Temperature Surface Engineering (pp. 115–128). Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000165895100010&KeyUID=WOS:000165895100010

Jacques, D., Villain, S., Rao, A. M., Andrews, R., Derbyshire, F., Dickey, E. C., & Qian, D. L. (2000). Synthesis of multiwalled carbon nanotubes. In Amorphous and Nanostructured Carbon (Vol. 593, pp. 15–20). Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000089239300002&KeyUID=WOS:000089239300002

Fan, X., Dickey, E. C., & Pennycook, S. J. (2000). Study of chromium-doped diamond-like carbon by Z-contrast imaging and electron energy loss spectroscopy. In Amorphous and Nanostructured Carbon (Vol. 593, pp. 329–334). Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000089239300051&KeyUID=WOS:000089239300051

Dickey, E. C., Bagiyono, Y. M., Lian, G. D., Sinnott, S. B., & Wagner, T. (2000). Preferred crystallographic orientation relationships of nickel films deposited on (100) cubic-zirconia substrates. Thin Solid Films, 372(1-2), 37–44. https://doi.org/10.1016/s0040-6090(00)01052-x

Grimes, C. A., Kouzoudis, D., Dickey, E. C., Qian, D., Anderson, M. A., Shahidain, R., … Green, L. (2000). Magnetoelastic sensors in combination with nanometer-scale honeycombed thin film ceramic TiO2 for remote query measurement of humidity. Journal of Applied Physics, 87(9), 5341–5343. https://doi.org/10.1063/1.373341

Qian, D., Dickey, E. C., Andrews, R., & Rantell, T. (2000). Load transfer and deformation mechanisms in carbon nanotube-polystyrene composites. Applied Physics Letters, 76(20), 2868–2870. https://doi.org/10.1063/1.126500

Grimes, C. A., Qian, D., Dickey, E. C., Allen, J. L., & Eklund, P. C. (2000). Laser pyrolysis fabrication of ferromagnetic gamma(')-Fe4N and FeC nanoparticles. Journal of Applied Physics, 87(9), 5642–5644. https://doi.org/10.1063/1.373419

Fan, X., Dickey, E. C., Eklund, P., Williams, K., Grigorian, L., Puretzky, A., … Pennycook, S. J. (2000). Direct observation of intercalant and catalyst particle in single wall carbon nanotubes. In Amorphous and Nanostructured Carbon (Vol. 593, pp. 129–134). Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000089239300020&KeyUID=WOS:000089239300020

Sunkara, M. K., Koduri, P., Dickey, E. C., & Fan, X. (2000). Behavior of redox reactions on metal-doped diamondlike carbon films. In Diamond Materials Vi (Vol. 99, pp. 448–457). Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000089239900050&KeyUID=WOS:000089239900050

Fan, X., Dickey, E. C., Eklund, P. C., Williams, K. A., Grigorian, L., Buczko, R., … Pennycook, S. J. (2000). Atomic Arrangement of Iodine Atoms inside Single-Walled Carbon Nanotubes. Physical Review Letters, 84(20), 4621–4624. https://doi.org/10.1103/PhysRevLett.84.4621

Martin, L. D., Bonner, J. C., Macchione, M., Booth, B., Akley, N., & Adler, K. B. (2000). Interaction of TGF? and EGF receptor mediates IL-13 induced mucous cell hyperplasia in human airway epithelium in vitro. American Journal of Respiratory and Critical Care Medicine, Vol. 161, p. A779.

Aspnes, D. E., & Opsal, J. (2000). Broadband spectroscopic rotating compensator ellipsometer. Washington, DC: U.S. Patent and Trademark Office.

Zetterling, C. M., Ostling, M., Yano, H., Kimoto, T., Matsunami, H., Linthicum, K., & Davis, R. F. (2000). SiC MISFETs with MBE-grown AlN gate dielectric. Materials Science Forum, 338(3), 1315–1318.

Narayan, J., Sharma, A. K., & Muth, J. F. (2000). Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys. Washington, DC: U.S. Patent and Trademark Office.

Aspnes, D. E., & Ebert, M. (2000). Method of reducing noise generated by arc lamps in optical systems employing slits. Washington, DC: U.S. Patent and Trademark Office.

Hassan, K. M., Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., & Kolbas, R. M. (2000). Size effect in germanium nanostructures fabricated by pulsed laser deposition. In S. K. H. Hahn & J. C. Parker (Eds.), Nanophase and Nanocomposite Materials III  (Materials Research Society proceedings; vol. 581). Pittsburgh, Pa.: Materials Research Society.

Teng, C. W., Muth, J. F., Kolbas, R. M., Hassan, K. M., Sharma, A. K., & Narayan, J. (2000). Quantum confinement of E1 and E2 transitions in Ge quantum dots embedded in Al203 or an AlN matrix. In T. S. J. Piqueras & M. S. Unlu (Eds.), Optical microstructural characterization of semiconductors  (Materials Research Society proceedings, vol. 588). Pittsburgh, Pa.: Materials Research Society.

White, B. D., Brillson, L. J., Lee, S. C., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T., … Lucovsky, G. (2000, December). Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 47, pp. 2276–2280. https://doi.org/10.1109/23.903765

Neves, B. R. A., Salmon, M. E., Leonard, D. N., Troughton, E. B., & Russell, P. E. (2000). Scratching and healing investigations on self-assembled monolayers using Atomic Force Microscopy. In D. B. Williams & R. Shimizu (Eds.), Microbeam Analysis 2000: proceedings of the Second Conference of the International Union of Microbeam Analysis Societies held in Kailua-Kona, Hawaii, 9-14 July 2000 (Vol. 165, pp. 367–368). Bristol: Institute of Physics Publishing.

Letendu, F., Hugon, M. C., Desvignes, J. M., Agius, B., Vickridge, I., Kim, D. J., & Kingon, A. I. (2000). Oxidation resistance of TaSiN diffusion barriers. Integrated Ferroelectrics, 31(1-4), 315–322.

Leonard, D. N., Spontak, R. J., & Russell, P. E. (2000). Environmental atomic force microscopy: Probing diblock polymer thin films and self-assembling molecules at various temperatures and pressures. In D. B. Williams & R. Shimizu (Eds.), Microbeam Analysis 2000: proceedings of the Second Conference of the International Union of Microbeam Analysis Societies held in Kailua-Kona, Hawaii, 9-14 July 2000 (Vol. 165, pp. 389–390). Bristol: Institute of Physics Publishing.

Hunter, J. L., Bates, T. B., Patel, S. B., Loesing, R., Guraynov, G., & Griffis, D. P. (2000). Optimization of SIMS analysis conditions for ultra-shallow phosphorus and arsenic implants. In D. B. Williams & R. Shimizu (Eds.), Microbeam Analysis 2000: proceedings of the Second Conference of the International Union of Microbeam Analysis Societies held in Kailua-Kona, Hawaii, 9-14 July 2000 (Vol. 165, pp. 327–328). Bristol: Institute of Physics Publishing.

Fan, W., Lee, W., Stolfo, S. J., & Miller, M. (2000). A multiple model cost-sensitive approach for intrusion detection. Machine Learning : ECML 2000, 1810(2000), 142–153.

Lee, H., Kim, I. Y., Powell, J., Aspnes, D. E., Lee, S., Peiris, F., & Furdyna, J. K. (2000). Visible-near ultraviolet ellipsometric study of Zn1-xMgxSe and Zn1-xBexSe alloys. JOURNAL OF APPLIED PHYSICS, 88(2), 878–882. https://doi.org/10.1063/1.373750

Edwards, N. V., Jarrendahl, K., Aspnes, D. E., Robbie, K., Powell, G. D., Cobet, C., … Madsen, L. D. (2000). Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry. SURFACE SCIENCE, 464(1), L703–L707. https://doi.org/10.1016/S0039-6028(00)00689-0

Edwards, N. V., Madsen, L. D., Robbie, K., Powell, G. D., Jarrendahl, K., Cobet, C., … Aspnes, D. E. (2000). Real-time assessment of overlayer removal on 4H-SiC surfaces: Techniques and relevance to contact formation. SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, Vol. 338-3, pp. 1033–1036. https://doi.org/10.4028/www.scientific.net/msf.338-342.1033

Hartman, J. D., Naniwae, K., Petrich, C., Ramachandran, V., Feenstra, R. M., Nemanich, R. J., & Davis, R. F. (2000). Photo-emission electron microscopy (PEEM) of cleaned and etched 6H-SiC(0001). SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, Vol. 338-3, pp. 353–356. https://doi.org/10.4028/www.scientific.net/msf.338-342.353

Gehrke, T., Linthicum, K. J., Rajagopal, P., Preble, E. A., Carlson, E. P., Robin, B. M., & Davis, R. F. (2000). Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition. Materials Science Forum, 338(3), 1491–1494.

Lucovsky, G., & Rayner, G. B. (2000). Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys. APPLIED PHYSICS LETTERS, 77(18), 2912–2914. https://doi.org/10.1063/1.1320860

Russell, P. E., Griffis, D. P., Shedd, G. M., Stark, T. J., & Vitarelli, J. (2000). Method for water vapor enhanced charged-particle-beam machining. Washington, DC: U.S. Patent and Trademark Office.

Davis, R. F., Nam, O. H., Zheleva, T. S., Gehrke, T., Linthicum, K. J., & Rajagopal, P. (2000). Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films. Materials Science Forum, 338(3), 1471–1476.

Suvkhanov, A., Parikh, N., Usov, I., Hunn, J., Withrow, S., Thomson, D., … Krasnobaev, L. Y. (2000). Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN. Materials Science Forum, 338(3), 1615–1618.

Hanser, A. D., Banks, A. D., Davis, R. F., Jahnen, B., Albrecht, M., Dorsch, W., … Strunk, H. P. (2000). Growth and microstructure of InxGa1-xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 3(3), 163–171. https://doi.org/10.1016/S1369-8001(99)00023-2

Jeon, H., Jung, B., Kim, Y. D., Yang, W. C., & Nemanich, R. J. (2000). Effects of a Ta interlayer on the phase transition of TiSi2 on Si(111). Journal of Applied Physics, 88(5), 2467–2471. https://doi.org/10.1063/1.1286725

Hyun, J., Barletta, P., Koh, K., Yoo, S., Oh, J., Aspnes, D. E., & Cuomo, J. J. (2000). Effect of Ar+ ion beam in the process of plasma surface modification of PET films. JOURNAL OF APPLIED POLYMER SCIENCE, 77(8), 1679–1683. https://doi.org/10.1002/1097-4628(20000822)77:8<1679::AID-APP4>3.0.CO;2-F

Danielsson, E., Zetterling, C. M., Ostling, M., Lee, S. K., Linthicum, K. J., Thomson, D. B., … Davis, R. F. (2000). Dry etching and metallization schemes in a GaN/SiC heterojunction device process. Materials Science Forum, 338(3), 1049–1052.

Jarausch, K. F., Kiely, J. D., Houston, J. E., & Russell, P. E. (2000). Defect-dependent elasticity: Nanoindentation as a probe of stress state. JOURNAL OF MATERIALS RESEARCH, 15(8), 1693–1701. https://doi.org/10.1557/JMR.2000.0244

Hren, J. J., Zhirnov, V. V., Sitar, Z., & Wojak, G. (2000). Characterization of dielectrics on the 'tips of needles'. Electrochemistry, 30(4), 210–215.

Lai, K. K., & Lamb, H. H. (2000). Tungsten chemical vapor deposition using tungsten hexacarbonyl: microstructure of as-deposited and annealed films. THIN SOLID FILMS, 370(1-2), 114–121. https://doi.org/10.1016/S0040-6090(00)00943-3

Rossow, U., Mantese, L., & Aspnes, D. E. (2000). Surface-induced optical anisotropy of Si and Ge. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 2229–2231. https://doi.org/10.1116/1.1306309

Bai, C., Spontak, R. J., Koch, C. C., Saw, C. K., & Balik, C. M. (2000). Structural changes in poly(ethylene terephthalate) induced by mechanical milling. POLYMER, 41(19), 7147–7157. https://doi.org/10.1016/S0032-3861(00)00048-3

Russ, J. C., & Russ, J. C. (2000, August). Stereo pair displays of surface range images. https://doi.org/10.1046/j.1365-2818.2000.00711.x

Ward, B. L., Hartman, J. D., Hurt, E. H., Tracy, K. M., Davis, R. F., & Nemanich, R. J. (2000). Schottky barrier height and electron affinity of titanium on AIN. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 2082–2087. https://doi.org/10.1116/1.1303733

Lucovsky, G., Yang, H., Niimi, H., Thorpe, M. F., & Phillips, J. C. (2000). Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2179–2186.

Yoo, S. D., Aspnes, D. E., Lastras-Martinez, L. F., Ruf, T., Konuma, M., & Cardona, M. (2000, July). High-resolution spectroscopy with reciprocal-space analysis: Application to isotopically pure Si. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 220, pp. 117–125. https://doi.org/10.1002/1521-3951(200007)220:1<117::aid-pssb117>3.0.co;2-4

LeBoeuf, S. F., Aumer, M. E., & Bedair, S. M. (2000). Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells. APPLIED PHYSICS LETTERS, 77(1), 97–99. https://doi.org/10.1063/1.126889

Aumer, M. E., LeBoeuf, S. F., Bedair, S. M., Smith, M., Lin, J. Y., & Jiang, H. X. (2000). Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures. APPLIED PHYSICS LETTERS, 77(6), 821–823. https://doi.org/10.1063/1.1306648

Aspnes, D. E., Mantese, L., Bell, K. A., & Rossow, U. (2000, July). Coherence effects and time dependences of the optical response of surfaces and interfaces of optically absorbing materials. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 220, pp. 709–715. https://doi.org/10.1002/1521-3951(200007)220:1<709::aid-pssb709>3.0.co;2-d

Kingon, A. I., Maria, J. P., & Streiffer, S. K. (2000). [Review of Alternative dielectrics to silicon dioxide for memory and logic devices]. NATURE, 406(6799), 1032–1038. https://doi.org/10.1038/35023243

Wu, Y., Lucovsky, G., & Lee, Y. M. (2000). The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing. IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1361–1369. https://doi.org/10.1109/16.848278

Wei, Q., & Narayan, J. (2000). [Review of Superhard diamondlike carbon: preparation, theory, and properties]. INTERNATIONAL MATERIALS REVIEWS, 45(4), 133–164. https://doi.org/10.1179/095066000101528340

Yoon, S. G., Kingon, A. I., & Kim, S. H. (2000). Relaxation and leakage current characteristics of Pb1-xLax(ZryTi1-y)(1-x/4)O3 thin films with various Ir-based top electrodes. JOURNAL OF APPLIED PHYSICS, 88(11), 6690–6695. https://doi.org/10.1063/1.1325382

Shenderova, O. A., Brenner, D. W., Omeltchenko, A., Su, X., Yang, L. H., & Nazarov, A. (2000). Properties of polycrystalline diamond: Multiscale modeling approach. MOLECULAR SIMULATION, Vol. 24, pp. 197–207. https://doi.org/10.1080/08927020008024196

Tragler, A., Srinivasan, L., Shenderova, O., McClauren, M., & Brenner, D. W. (2000). Novel simulation tools for materials engineering education. MOLECULAR SIMULATION, Vol. 25, pp. 121–130. https://doi.org/10.1080/08927020008044116

Koch, C. C., Smith, A. P., Bai, C., Spontak, R. J., & Balik, C. M. (2000). Nonequilibrium processing of polymeric materials by mechanical attrition. In H. S. J. Eckert & L. Schultz (Eds.), International Symposium on Metastable, Mechanically Alloyed and Nanocrystalline Materials (1999: Dresden, Germany): Vol. 343/346 (pp. 49–561). Utikon-Zurich, Switz.; Enfield, NH: Trans Tech Publications.

Shenderova, O., Mewkill, J., & Brenner, D. W. (2000). Nanoindentation as a probe of nanoscale residual stresses: Atomistic simulation results. MOLECULAR SIMULATION, Vol. 25, pp. 81-+. https://doi.org/10.1080/08927020008044114

Manghnani, V., Raman, S., Niyogi, D. S., Parameswara, V., Morrison, J. M., Ramana, S. V., & Raju, J. V. S. S. (2000). Marine boundary-layer variability over the Indian Ocean during INDOEX (1998). BOUNDARY-LAYER METEOROLOGY, 97(3), 411–430. https://doi.org/10.1023/A:1002730405170

Li, Y. X., Brenner, D. W., Dong, X. L., & Sun, C. C. (2000). First principles prediction of gas-phase composition and substrate temperature for diamond film growth. MOLECULAR SIMULATION, Vol. 25, pp. 41–51. https://doi.org/10.1080/08927020008044111

Zhong, H. C., Heuss, G., & Misra, V. (2000). Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS. IEEE ELECTRON DEVICE LETTERS, 21(12), 593–595. https://doi.org/10.1109/55.887476

Koo, M. S., Kim, T. J., Lee, M. S., Oh, M. S., Kim, Y. D., Yoo, S. D., … Jonker, B. T. (2000). Dielectric function of epitaxial ZnSe films. APPLIED PHYSICS LETTERS, 77(21), 3364–3366. https://doi.org/10.1063/1.1328098

Lee, H., Kim, I. Y., Powell, J., Aspnes, D. E., Lee, S., Peiris, F., & Furdyna, J. K. (2000). Dielectric function and bowing parameter of Zn1-xMgxSe and Zn1-xBexSe alloys. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 37(6), 1012–1016. https://doi.org/10.3938/jkps.37.1012

Reed, M. J., El-Masry, N. A., Parker, C. A., Roberts, J. C., & Bedair, S. M. (2000). Critical layer thickness determination of GaN/InGaN/GaN double heterostructures. Applied Physics Letters, 77(25), 4121–4123. https://doi.org/10.1063/1.1334361

Mayo, R. M., Newman, J. W., Yamagata, Y., Sharma, A., & Narayan, J. (2000). Comparative study of pulsed laser ablated plasma plumes from single crystal graphite and amorphous carbon targets. Part II. Electrostatic probe measurements. JOURNAL OF APPLIED PHYSICS, 88(11), 6868–6874. https://doi.org/10.1063/1.1321784

Yamagata, Y., Sharma, A., Narayan, J., Mayo, R. M., Newman, J. W., & Ebihara, K. (2000). Comparative study of pulsed laser ablated plasma plumes from single crystal graphite and amorphous carbon targets. Part I. Optical emission spectroscopy. JOURNAL OF APPLIED PHYSICS, 88(11), 6861–6867. https://doi.org/10.1063/1.1321783

Therrien, R., Lucovsky, G., & Davis, R. (2000, October 9). Charge redistribution at GaN-Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces. APPLIED SURFACE SCIENCE, Vol. 166, pp. 513–519. https://doi.org/10.1016/S0169-4332(00)00485-2

Tang, X. L., & Conrad, H. (2000). An analytical model for magnetorheological fluids. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 33(23), 3026–3032. https://doi.org/10.1088/0022-3727/33/23/304

Chambers, J. J., & Parsons, G. N. (2000). Yttrium silicate formation on silicon: Effect of silicon preoxidation and nitridation on interface reaction kinetics. APPLIED PHYSICS LETTERS, 77(15), 2385–2387. https://doi.org/10.1063/1.1316073

Reed, M. L., Liu, S. X., Roberts, J. C., Stadelmaier, H. H., Bedair, S. M., & El-Masry, N. A. (2000). The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 218(2-3), 177–181. https://doi.org/10.1016/S0304-8853(00)00403-0

Yang, C. S., Smith, L. L., Arthur, C. B., & Parsons, G. N. (2000). Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 683–689. https://doi.org/10.1116/1.591259

Lucovsky, G., Yang, H. Y., Wu, Y., & Niimi, H. (2000, October 17). Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics. THIN SOLID FILMS, Vol. 374, pp. 217–227. https://doi.org/10.1016/S0040-6090(00)01153-6

Narayanan, V., Mahajan, S., Sukidi, N., Bachmann, K. J., Woods, V., & Dietz, N. (2000). Orientation mediated self-assembled gallium phosphide islands grown on silicon. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 80(3), 555–572. https://doi.org/10.1080/01418610008212068

Lucovsky, G., & Phillips, J. C. (2000, October 9). Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces. APPLIED SURFACE SCIENCE, Vol. 166, pp. 497–503. https://doi.org/10.1016/S0169-4332(00)00482-7

Lucovsky, G., Niimi, H., Wu, Y., & Yang, H. (2000, June). Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces. APPLIED SURFACE SCIENCE, Vol. 159, pp. 50–61. https://doi.org/10.1016/S0169-4332(00)00071-4

Ebert, M., Bell, K. A., Yoo, S. D., Flock, K., & Aspnes, D. E. (2000, March 27). In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy. THIN SOLID FILMS, Vol. 364, pp. 22–27. https://doi.org/10.1016/S0040-6090(99)00920-7

Stemmer, S., Streiffer, S. K., Browning, N. D., Basceri, C., & Kingon, A. I. (2000). Grain boundaries in barium strontium titanate thin films: Structure, chemistry and influence on electronic properties. INTERFACE SCIENCE, 8(2-3), 209–221. https://doi.org/10.1023/A:1008794520909

Wolfe, D. M., & Lucovsky, G. (2000). Formation of nano-crystalline Si by thermal annealing of SiOx, SiCx and SiOyCx amorphous alloys: model systems for advanced device processing. Journal of Non-Crystalline Solids, 266(2000 May), 1009–1014.

Niimi, H., Yang, H. Y., Lucovsky, G., Keister, J. W., & Rowe, J. E. (2000, October 9). Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO(2) interfaces. APPLIED SURFACE SCIENCE, Vol. 166, pp. 485–491. https://doi.org/10.1016/S0169-4332(00)00480-3

Lucovsky, G., & Phillips, J. C. (2000). Application of constraint theory to Si-dielectric interfaces in a-Si: H and poly-Si thin film transistors (TFTs). Journal of Non-Crystalline Solids, 266(2000 May), 1335–1339.

Kaminska, E., Piotrowska, A., Barcz, A., Jasinski, J., Zielinski, M., Golaszewska, K., … Tomsia, K. (2000). Zirconium mediated hydrogen outdiffusion from p-GaN. MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U491–496.

Spontak, R. J., & Patel, N. P. (2000). Thermoplastic elastomers: fundamentals and applications. Current Opinion in Colloid & Interface Science, 5(5-6), 334–341.

Kim, S. H., Lee, D. S., Hwang, C. S., Kim, D. J., & Kingon, A. I. (2000). Thermally induced voltage offsets in Pb(Zr,Ti)O-3 thin films. APPLIED PHYSICS LETTERS, 77(19), 3036–3038. https://doi.org/10.1063/1.1324001

Neves, B. R. A., Salmon, M. E., Russell, P. E., & Troughton, E. B. (2000). Thermal stability study of self-assembled monolayers on mica.

Murty, K. L. (2000). The internal pressurization creep of Zr alloys for spent-fuel dry storage feasibility. JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY, 52(9), 34–38. https://doi.org/10.1007/s11837-000-0185-y

Yang, H., Niimi, H., Keister, J. W., & Lucovsky, G. (2000). The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices. IEEE ELECTRON DEVICE LETTERS, 21(2), 76–78. https://doi.org/10.1109/55.821673

Shi, W., Morrison, J. M., Bohm, E., & Manghnani, V. (2000). The Oman upwelling zone during 1993, 1994 and 1995. DEEP-SEA RESEARCH PART II-TOPICAL STUDIES IN OCEANOGRAPHY, 47(7-8), 1227–1247. https://doi.org/10.1016/S0967-0645(99)00142-3

Carter, R. J., Hauser, JR, & Nemanich, R. J. (2000). Surface residue island nucleation in anhydrous HF/alcohol vapor processing of Si surfaces. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(9), 3512–3518. https://doi.org/10.1149/1.1393929

Spontak, R. J., & Vratsanos, M. S. (2000). Stress relaxation activation in rubber-modified polymer systems exhibiting controlled miscibility through blending. MACROMOLECULES, 33(6), 2290–2292. https://doi.org/10.1021/ma991851y

Soman, R., Reisman, A., & Temple, D. (2000). Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis II. The system Si-Ge-Cl-H-Ar. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(11), 4342–4344. https://doi.org/10.1149/1.1394066

Soman, R., Reisman, A., & Temple, D. (2000). Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis I. The system Si-Ge-Cl-H. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(11), 4333–4341. https://doi.org/10.1149/1.1394065

Ronning, C., Hofsass, H., Stotzler, A., Deicher, M., Carlson, E. P., Hartlieb, P. J., … Davis, R. F. (2000). Photoluminescence characterization of Mg implanted GaN. MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628.

Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Rajagopal, P., Zorman, C. A., & Mehregany, M. (2000). Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates. MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U46–57.

Edwards, N. V., Bremser, M. D., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Yoo, S. D., … Monemar, B. (2000, March 27). Optical characterization of wide bandgap semiconductors. THIN SOLID FILMS, Vol. 364, pp. 98–106. https://doi.org/10.1016/S0040-6090(99)00903-7

Nazarov, A. A., Shenderova, O. A., & Brenner, D. W. (2000). On the disclination-structural unit model of grain boundaries. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 281(1-2), 148–155. https://doi.org/10.1016/s0921-5093(99)00727-3

Hugon, M. C., Desvignes, J. M., Agius, B., Vickridge, I. C., Kim, D. J., & Kingon, A. I. (2000, March). Narrow resonance profiling study of the oxidation of reactively sputtered Ti1-xAlxN thin films. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 161, pp. 578–583. https://doi.org/10.1016/S0168-583X(99)00953-2

Bronstein, L. M., Chernyshov, D. M., Valetsky, P. M., Wilder, E. A., & Spontak, R. J. (2000, October 31). Metal nanoparticles grown in the nanostructured matrix of poly(octadecylsiloxane). https://doi.org/10.1021/la0009341

Sharma, A. K., Narayan, J., Jin, C., Kvit, A., Chattopadhyay, S., & Lee, C. (2000). Integration of Pb(Zr0.52Ti0.48)O-3 epilayers with Si by domain epitaxy. APPLIED PHYSICS LETTERS, 76(11), 1458–1460. https://doi.org/10.1063/1.126063

Conrad, H., & Yang, D. (2000). Influence of an electric field on the plastic deformation of fine-grained MgO at high homologous temperatures. ACTA MATERIALIA, 48(16), 4045–4052. https://doi.org/10.1016/S1359-6454(00)00203-2

Collazo, R., Schlesser, R., Roskowski, A., Davis, R. F., & Sitar, Z. (2000). Hot electron transport in AlN. JOURNAL OF APPLIED PHYSICS, 88(10), 5865–5869. https://doi.org/10.1063/1.1318386

Boehme, C., & Lucovsky, G. (2000). H loss mechanism during anneal of silicon nitride: Chemical dissociation. JOURNAL OF APPLIED PHYSICS, 88(10), 6055–6059. https://doi.org/10.1063/1.1321730

Michel, A., Hanser, D., Davis, R. F., Qiao, D., Lau, S. S., Yu, L. S., … Asbeck, P. (2000). Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures. MRS Internet Journal of Nitride Semiconductor Research, 5, U520–525.

Mitsugi, F., Yamagata, Y., Ikegami, T., Ebihara, K., Narayan, J., & Grishin, A. M. (2000, September). Ferroelectric and colossal magnetoresistive properties of a PbZr1-xTixO3/La1-xSrxMnO3 heterostructure film. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Vol. 39, pp. 5418–5420. https://doi.org/10.1143/JJAP.39.5418

Hunter, M. E., Reed, M. J., El-Masry, N. A., Roberts, J. C., & Bedair, S. M. (2000). Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation. APPLIED PHYSICS LETTERS, 76(14), 1935–1937. https://doi.org/10.1063/1.126217

Nazarov, A. A., Shenderova, O. A., & Brenner, D. W. (2000). Elastic models of symmetrical < 002 > and < 011 > tilt grain boundaries in diamond. PHYSICAL REVIEW B, 61(2), 928–936. https://doi.org/10.1103/physrevb.61.928

Shay, J. S., English, R. J., Spontak, R. J., Balik, C. M., & Khan, S. A. (2000). Dispersion polymerization of polystyrene latex stabilized with novel grafted poly(ethylene glycol) macromers in 1-propanol/water. MACROMOLECULES, 33(18), 6664–6671. https://doi.org/10.1021/ma992152o

Liaw, H. M., Doyle, R., Fejes, P. L., Zollner, S., Konkar, A., Linthicum, K. J., … Davis, R. F. (2000). Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates. SOLID-STATE ELECTRONICS, 44(4), 747–755. https://doi.org/10.1016/S0038-1101(99)00307-X

Teng, C. W., Muth, J. F., Ozgur, U., Bergmann, M. J., Everitt, H. O., Sharma, A. K., … Narayan, J. (2000). Refractive indices and absorption coefficients of MgxZn1-xO alloys. APPLIED PHYSICS LETTERS, 76(8), 979–981. https://doi.org/10.1063/1.125912

Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., Zorman, C., … Davis, R. F. (2000). Pendeo-epitaxial growth of gallium nitride on silicon substrates. JOURNAL OF ELECTRONIC MATERIALS, 29(3), 306–310. https://doi.org/10.1007/s11664-000-0068-6

Sowers, A. T., Ward, B. L., English, S. L., & Nemanich, R. J. (2000). Measurement of field emission from nitrogen-doped diamond films. DIAMOND AND RELATED MATERIALS, Vol. 9, pp. 1569–1573. https://doi.org/10.1016/S0925-9635(00)00304-6

Yim, M. S., & Murty, K. L. (2000). Materials issues in nuclear-waste management. JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY, 52(9), 26–29. https://doi.org/10.1007/s11837-000-0183-0

Ono, T., Sasaki, T., Kirk, H., & Rozgonyi, G. A. (2000). Electron beam induced current contrast of oxygen precipitation related defects in Czochralski silicon. Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 78-79(2000), 237–252.

Aneja, V. P., Mathur, R., Arya, S. P., Li, Y. X., Murray, G. C., & Manuszak, T. L. (2000). Coupling the vertical distribution of ozone in the atmospheric boundary layer. ENVIRONMENTAL SCIENCE & TECHNOLOGY, 34(11), 2324–2329. https://doi.org/10.1021/es990997+

Nemanich, R. J. (2000). Advancing the science and technology of diamond, diamond-like carbon, silicon carbides and Group 3 nitride materials. Diamond and Related Materials, 9(1), vii.

Wu, Y. D., Xiang, Q., Yang, J. Y. M., Lucovsky, G., & Lin, M. R. (2000). Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (< 2.0 nm) single layer and dual layer gate oxides. MICROELECTRONICS RELIABILITY, 40(12), 1987–1995. https://doi.org/10.1016/s0026-2714(00)00103-7

Parsons, G. N. (2000, May). Surface reactions in very low temperature (< 150 degrees C) hydrogenated amorphous silicon deposition, and applications to thin film transistors. JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 266, pp. 23–30. https://doi.org/10.1016/s0022-3093(99)00713-9

Lucovsky, G., Wu, Y., Niimi, H., Yang, H., Keister, J., & Rowe, J. E. (2000). Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 18, pp. 1163–1168. https://doi.org/10.1116/1.582318

Madarasz, F. L., Dimmock, J. O., Dietz, N., & Bachmann, K. J. (2000, May 15). Sellmeier parameters for ZnGaP2 and GaP (vol 87, pg 1564, 2000). JOURNAL OF APPLIED PHYSICS, Vol. 87, pp. 7597–7597. https://doi.org/10.1063/1.373029

Bell, K. A., Ebert, M., Yoo, S. D., Flock, K., & Aspnes, D. E. (2000). Real-time optical characterization of heteroepitaxy by organometallic chemical vapor deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 18, pp. 1184–1189. https://doi.org/10.1116/1.582323

Conrad, H. (2000, August 15). Preface - Enhanced synthesis, processing and properties of materials with electric and magnetic fields. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, Vol. 287, pp. VII-VII. https://doi.org/10.1016/s0921-5093(00)00764-4

Russ, J. C., & Dehoff, R. T. (2000). Practical stereology (2nd ed.). https://doi.org/10.1007/978-1-4615-1233-2

Johnson, R. S., Niimi, H., & Lucovsky, G. (2000). New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 18, pp. 1230–1233. https://doi.org/10.1116/1.582331

Lai, Z. H., Conrad, H., Teng, G. Q., & Chao, Y. S. (2000, August 15). Nanocrystallization of amorphous Fe-Si-B alloys using high current density electropulsing. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, Vol. 287, pp. 238–247. https://doi.org/10.1016/s0921-5093(00)00781-4

Lastras-Martinez, L. F., Ruf, T., Konuma, M., Cardona, M., & Aspnes, D. E. (2000). Isotopic effects on the dielectric response of Si around the E-1 gap. PHYSICAL REVIEW B, 61(19), 12946–12951. https://doi.org/10.1103/physrevb.61.12946

Conrad, H. (2000, August 15). Influence of an electric or magnetic field on the liquid-solid transformation in materials and on the microstructure of the solid. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, Vol. 287, pp. 205–212. https://doi.org/10.1016/s0921-5093(00)00777-2

Han, S. K., McClure, M. T., Wolden, C. A., Vlahovic, B., Soldi, A., & Sitar, S. (2000). Fabrication and testing of a microstrip particle detector based on highly oriented diamond films. Diamond and Related Materials, 9(3-6), 1008–1012.

Koch, C. C. (2000, August 15). Experimental evidence for magnetic or electric field effects on phase transformations. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, Vol. 287, pp. 213–218. https://doi.org/10.1016/s0921-5093(00)00778-4

Schlesser, R., Collazo, R., Bower, C., Zhou, O., & Sitar, Z. (2000). Energy distribution of field emitted electrons from carbon nanotubes. DIAMOND AND RELATED MATERIALS, Vol. 9, pp. 1201–1204. https://doi.org/10.1016/s0925-9635(99)00277-0

Conrad, H. (2000, August 15). Electroplasticity in metals and ceramics. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, Vol. 287, pp. 276–287. https://doi.org/10.1016/s0921-5093(00)00786-3

Smith, A. P., Spontak, R., Koch, C. C., Smith, S. D., & Ade, H. (2000). Temperature-induced morphological evolution in polymer blends produced by cryogenic mechanical alloying. Macromolecular Materials and Engineering, 274(1), 1–12. https://doi.org/10.1002/(sici)1439-2054(20000101)274:1<1::aid-mame1>3.3.co;2-r

Teng, C. W., Muth, J. F., Kolbas, R. M., Hassan, K. M., Sharma, A. K., Kvit, A., & Narayan, J. (2000). Quantum confinement of E-1 and E-2 transitions in Ge quantum dots embedded in an Al2O3 or an AlN matrix. APPLIED PHYSICS LETTERS, 76(1), 43–45. https://doi.org/10.1063/1.125650

Croswell, R. T., Reisman, A., Simpson, D. L., Temple, D., & Williams, C. K. (2000). Planarization processes and applications III. As-deposited and annealed film properties. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(4), 1513–1524. https://doi.org/10.1149/1.1393387

Bergman, L., Dutta, M., Stroscio, M. A., Komirenko, S. M., Nemanich, R. J., Eiting, C. J., … Dupuis, R. D. (2000). Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice. APPLIED PHYSICS LETTERS, 76(15), 1969–1971. https://doi.org/10.1063/1.126225

Wang, K., & Reeber, R. R. (2000). Mode Gruneisen parameters and negative thermal expansion of cubic ZrW2O8 and ZrMo2O8. APPLIED PHYSICS LETTERS, 76(16), 2203–2204. https://doi.org/10.1063/1.126296

Reeber, R. R., & Wang, K. (2000). Lattice parameters and thermal expansion of GaN. JOURNAL OF MATERIALS RESEARCH, 15(1), 40–44. https://doi.org/10.1557/JMR.2000.0011

Kim, S. H., Kim, D. J., Maria, J. P., Kingon, A. I., Streiffer, S. K., Im, J., … Krauss, A. R. (2000). Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9 thin film properties. APPLIED PHYSICS LETTERS, 76(4), 496–498. https://doi.org/10.1063/1.125799

Simpson, D. L., Croswell, R. T., Reisman, A., Williams, C. K., & Temple, D. (2000). Deposition and characterization of undoped and boron and phosphorus doped (SixGe1-xO2) glass films. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(4), 1560–1567. https://doi.org/10.1149/1.1393394

Smith, A. P., Ade, H., Balik, C. M., Koch, C. C., Smith, S. D., & Spontak, R. J. (2000). Cryogenic mechanical alloying of poly(methyl methacrylate) with polyisoprene and poly(ethylene-alt-propylene). MACROMOLECULES, 33(7), 2595–2604. https://doi.org/10.1021/ma991453v

Soman, R., Reisman, A., Temple, D., Alberti, R., & Pace, C. (2000). Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data II. Morphology and composition as a function of deposition parameters. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(5), 1854–1858. https://doi.org/10.1149/1.1393446

Soman, R., Reisman, A., Temple, D., & Alberti, R. (2000). Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data I. Deposition parameters. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(5), 1847–1853. https://doi.org/10.1149/1.1393445

Loesing, R., Guryanov, G. M., Hunter, J. L., & Griffis, D. P. (2000). Secondary ion mass spectrometry depth profiling of ultrashallow phosphorous in silicon. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 509–513. https://doi.org/10.1116/1.591222

Spontak, R. J., Roberge, R. L., Vratsanos, M. S., & Starner, W. E. (2000). Model acrylate-terminated urethane blends in toughened epoxies: a morphology and stress relaxation study. POLYMER, 41(16), 6341–6349. https://doi.org/10.1016/S0032-3861(99)00870-8

Smith, A. P., Shay, J. S., Spontak, R. J., Balik, C. M., Ade, H., Smith, S. D., & Koch, C. C. (2000). High-energy mechanical milling of poly(methyl methacrylate), polyisoprene and poly(ethylene-alt-propylene). POLYMER, 41(16), 6271–6283. https://doi.org/10.1016/S0032-3861(99)00830-7

Mathew, M. D., Movva, S., & Murty, K. L. (2000). Deformation mechanisms in tin and tin-based electronic solder alloys. CREEP AND FRACTURE OF ENGINEERING MATERIALS AND STRUCTURES, Vol. 171-1, pp. 655–662. https://doi.org/10.4028/www.scientific.net/kem.171-174.655

Shenderova, O. A., Brenner, D. W., Omeltchenko, A., Su, X., & Yang, L. H. (2000). Atomistic modeling of the fracture of polycrystalline diamond. PHYSICAL REVIEW B, 61(6), 3877–3888. https://doi.org/10.1103/physrevb.61.3877

Hyun, J., Pope, M., Smith, J., Park, M., & Cuomo, J. J. (2000). Ultrathin DLC and SiOx layer deposition on poly(ethylene terephthalate) and restriction of surface dynamics. Journal of Applied Polymer Science, 75(9), 1158–1164. https://doi.org/10.1002/(SICI)1097-4628(20000228)75:9<1158::AID-APP9>3.3.CO;2-C

Christman, J. A., Kim, S. H., Maiwa, H., Maria, J. P., Rodriguez, B. J., Kingon, A. I., & Nemanich, R. J. (2000). Spatial variation of ferroelectric properties in Pb(Zr-0.3, Ti-0.7)O-3 thin films studied by atomic force microscopy. JOURNAL OF APPLIED PHYSICS, 87(11), 8031–8034. https://doi.org/10.1063/1.373492

Erlat, A. G., Wang, B. C., Spontak, R. J., Tropsha, Y., Mar, K. D., Montgomery, D. B., & Vogler, E. A. (2000). Morphology and gas barrier properties of thin SiOx coatings on polycarbonate: Correlations with plasma-enhanced chemical vapor deposition conditions. JOURNAL OF MATERIALS RESEARCH, 15(3), 704–717. https://doi.org/10.1557/jmr.2000.0103

Song, Y., Srinivasarao, M., Tonelli, A., Balik, C. M., & McGregor, R. (2000). Laser scanning confocal microscopy study of dye diffusion in fibers. MACROMOLECULES, 33(12), 4478–4485. https://doi.org/10.1021/ma991584w

Ronning, C., Dalmer, M., Uhrmacher, M., Restle, M., Vetter, U., Ziegeler, L., … Davis, R. F. (2000). Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery. JOURNAL OF APPLIED PHYSICS, 87(5), 2149–2157. https://doi.org/10.1063/1.372154

Lucovsky, G., Yang, H., Niimi, H., Keister, J. W., Rowe, J. E., Thorpe, M. F., & Phillips, J. C. (2000). Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1742–1748.

Balkas, C. M., Sitar, Z., Bergman, L., Shmagin, I. K., Muth, J. F., Kolbas, R., … Davis, R. F. (2000). Growth and characterization of GaN single crystals. JOURNAL OF CRYSTAL GROWTH, 208(1-4), 100–106. https://doi.org/10.1016/S0022-0248(99)00445-5

Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2000). Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer. Washington, DC: U.S. Patent and Trademark Office.

Jinnai, H., Nishikawa, Y., Spontak, R. J., Smith, S. D., Agard, D. A., & Hashimoto, T. (2000). Direct measurement of interfacial curvature distributions in a bicontinuous block copolymer morphology. PHYSICAL REVIEW LETTERS, 84(3), 518–521. https://doi.org/10.1103/physrevlett.84.518

Brillson, L. J., Young, A. P., White, B. D., Schafer, J., Niimi, H., Lee, Y. M., & Lucovsky, G. (2000). Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1737–1741.

Gupta, A., & Parsons, G. N. (2000). Bond strain, chemical induction, and OH incorporation in low-temperature (350-100 degrees C) plasma deposited silicon dioxide films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 1764–1769. https://doi.org/10.1116/1.591468

Wei, Q., Sankar, J., Sharma, A. K., Oktyabrsky, S., Narayan, J., & Narayan, R. J. (2000). Atomic structure, electrical properties, and infrared range optical properties of diamondlike carbon films containing foreign atoms prepared by pulsed laser deposition. JOURNAL OF MATERIALS RESEARCH, 15(3), 633–641. https://doi.org/10.1557/jmr.2000.0094

Smith, B. C., Khandelwal, A., & Lamb, H. H. (2000). Ar/N2O remote plasma-assisted oxidation of Si(100): Plasma chemistry, growth kinetics, and interfacial reactions. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 1757–1763. https://doi.org/10.1116/1.591467

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Wu, Y. D., Lee, Y. M., & Lucovsky, G. (2000). 1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process. IEEE ELECTRON DEVICE LETTERS, 21(3), 116–118. https://doi.org/10.1109/55.823574

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