Materials Science & Engineering - 2002

Jagannadham, K., & Wang, H. (2002). Thermal resistance of interfaces in AlN-diamond thin film composites. Journal of Applied Physics, 91(3), 1224–1235. https://doi.org/10.1063/1.1428103

Jagannadham, K., Watkins, T. R., & Dinwiddie, R. B. (2002). Novel heat spreader coatings for high power electronic devices. Journal of Materials Science, 37(7), 1363–1376. https://doi.org/10.1023/A:1014568512077

Makala, R. S., Jagannadham, K., Sales, B. C., & Wang, H. (2002). Microstructure and thermoelectric properties of p-type Bi<inf>0.5</inf>Sb<inf>1.5</inf>Te<inf>3</inf> and n-type Bi<inf>2</inf>Te<inf>2.7</inf>Se<inf>0.3</inf> films deposited by pulsed laser ablation. Materials Research Society Symposium - Proceedings, 691, 189–194. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0036352116&partnerID=MN8TOARS

Makala, R. S., Yoganand, S. N., Jagannadham, K., Lemaster, R. L., & Bailey, J. (2002). Diamond coated WC tools for machining wood and particle board. Materials Research Society Symposium - Proceedings, 697, 347–352. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0036450231&partnerID=MN8TOARS

Yingling, Y. G., & Garrison, B. J. (2002). Photochemical induced effects in material ejection in laser ablation. Chemical Physics Letters, 364(3-4), 237–243. https://doi.org/10.1016/s0009-2614(02)01327-1

ZHAO, Y., HE, D. W., DAEMEN, L. L., & al. (2002). Superhard B-C-N materials synthesized in nanostructured bulks. JOURNAL OF MATERIALS RESEARCH, 17(12), 3139–3145.

SHIN, D. H., KIM, I., KIM, J., & al. (2002). Shear strain accommodation during severe plastic deformation of titanium using equal channel angular pressing. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 334(1-2), 239–245.

ZHU, Y. T., SHU, L., PETERSON, E. J., & al. (2002). Rietveld refinement of crystal chemistry of RBa4Cu3O8.5+delta (R = rare earth). JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 63(1), 23–29.

VALIEV, R. Z., ALEXANDROV, IV, ZHU, Y. T., & al. (2002). Paradox of strength and ductility in metals processed by severe plastic deformation. JOURNAL OF MATERIALS RESEARCH, 17(1), 5–8.

KLIE, R. F., IDROBO, J. C., BROWNING, N. D., & al. (2002). Observation of coherent oxide precipitates in polycrystalline MgB2. APPLIED PHYSICS LETTERS, 80(21), 3970–3972.

ZHU, Y. T., SHU, L., & BUTT, D. P. (2002). Kinetics and products of molybdenum disilicide powder oxidation. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 85(2), 507–509.

SERQUIS, A., LIAO, X. Z., ZHU, Y. T., & al. (2002). Influence of microstructures and crystalline defects on the superconductivity of MgB2. JOURNAL OF APPLIED PHYSICS, 92(1), 351–356.

HUANG, J. Y., PARK, B. H., JAN, D., & al. (2002). High-resolution transmission electron microscopy study of defects and interfaces in epitaxial TiO2 films on sapphire and LaAlO3. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 82(4), 735–749.

SERQUIS, A., ZHU, Y. T., PETERSON, D. E., & al. (2002). Degradation of MgB2 under ambient environment. APPLIED PHYSICS LETTERS, 80(23), 4401–4403.

LIAO, X. Z., SERQUIS, A. C., ZHU, Y. T., & al. (2002). Controlling flux pinning precipitates during MgB2 synthesis. APPLIED PHYSICS LETTERS, 80(23), 4398–4400.

ZHU, Y. T., & BEYERLEIN, I. J. (2002). Bone-shaped short fiber composites - an overview. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 326(2), 208–227.

HUANG, J. Y., & ZHU, Y. T. (2002). Atomic-scale structural investigations on the nucleation of cubic boron nitride from amorphous boron nitride under high pressures and temperatures. CHEMISTRY OF MATERIALS, 14(4), 1873–1878.

Kichambare, P. D., Qian, D., Dickey, E. C., & Grimes, C. A. (2002). Thin film metallic catalyst coatings for the growth of multiwalled carbon nanotubes by pyrolysis of xylene. Carbon, 40(11), 1903–1909. Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000177636700007&KeyUID=WOS:000177636700007

Paulose, M., Grimes, C. A., Varghese, O. K., & Dickey, E. C. (2002). Self-assembled fabrication of aluminum-silicon nanowire networks. Applied Physics Letters, 81(1), 153–155. https://doi.org/10.1063/1.1492005

Lian, G. D., Dickey, E. C., Ueno, M., & Sunkara, M. K. (2002). Ru-doped nanostructured carbon films. Diamond and Related Materials, 11(12), 1890–1896. Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000180488500002&KeyUID=WOS:000180488500002

Dickey, E. C., Varghese, O. K., Ong, K. G., Gong, D. W., Paulose, M., & Grimes, C. A. (2002). Room temperature ammonia and humidity sensing using highly ordered nanoporous alumina films. Sensors, 2(3), 91–110. https://doi.org/10.3390/s20300091

Blondeau-Patissier, V., Lian, G. D., Domenichini, B., Steinbrunn, A., Bourgeois, S., & Dickey, E. C. (2002). Molybdenum thin-film growth on rutile titanium dioxide (110). Surface Science, 506(1-2), 119–128. Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000175757100017&KeyUID=WOS:000175757100017

Varghese, O. K., Gong, D. W., Paulose, M., Ong, K. G., Grimes, C. A., & Dickey, E. C. (2002). Highly ordered nanoporous alumina films: Effect of pore size and uniformity on sensing performance. Journal of Materials Research, 17(5), 1162–1171. Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000175414600039&KeyUID=WOS:000175414600039

Singh, R. S., Grimes, C. A., & Dickey, E. C. (2002). Fabrication of nanoporous TiO2 films through Benard-Marangoni convection. Materials Research Innovations, 5(3-4), 178–184. Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000174224700010&KeyUID=WOS:000174224700010

Mao, Z. G., Sinnott, S. B., & Dickey, E. C. (2002). Ab initio calculations of pristine and doped zirconia Sigma 5 (310)/[001] tilt grain boundaries. Journal of the American Ceramic Society, 85(6), 1594–1600. Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000176667400039&KeyUID=WOS:000176667400039

HENNRICH, F., LEBEDKIN, S., MALIK, S., TRACY, J., BARCZEWSKI, M., ROSNER, H., & KAPPES, M. (2002). Preparation, characterization and applications of free-standing single walled carbon nanotube thin films. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 4(11), 2273–2277. https://doi.org/10.1039/b201570f

Krauss, A. R., Gruen, D. M., Pellin, M. J., & Auciello, O. (2002). Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor. Washington, DC: U.S. Patent and Trademark Office.

Gruen, D. M., Krauss, A. R., Ding, M. Q., & Auciello, O. (2002). Field emission from bias-grown diamond thin films in a microwave plasma. Washington, DC: U.S. Patent and Trademark Office.

Aspnes, D. E., Opsal, J., & Faton, J. T. (2002). Thin film optical measurement system and method with calibrating ellipsometer. Washington, DC: U.S. Patent and Trademark Office.

Aspnes, D. E., & Opsal, J. (2002). Broadband spectroscopic rotating compensator ellipsometer. Washington, DC: U.S. Patent and Trademark Office.

Basceri, C., & Sandhu, G. S. (2002). Structures and methods for enhancing capacitors in integrated circuits. Washington, DC: U.S. Patent and Trademark Office.

Linthicum, K. J., Gehrke, T., & Davis, R. F. (2002). Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts. Washington, DC: U.S. Patent and Trademark Office.

Basceri, C., Visokay, M., Graettinger, T. M., & Cummings, S. D. (2002). Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers. Washington, DC: U.S. Patent and Trademark Office.

Basceri, C. (2002). Method for improving the sidewall stoichiometry of thin film capacitors. Washington, DC: U.S. Patent and Trademark Office.

Rhodes, H. E., Visokay, M., Graettinger, T., Gealy, D., Sandhu, G., Basceri, C., & Cummings, S. (2002). Integrated capacitors fabricated with conductive metal oxides. Washington, DC: U.S. Patent and Trademark Office.

Basceri, C., & Gealy, D. (2002). Dielectric films and methods of forming same. Washington, DC: U.S. Patent and Trademark Office.

Basceri, C. (2002). Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor. Washington, DC: U.S. Patent and Trademark Office.

Basceri, C., & Sandhu, G. S. (2002). Capacitor processing method and DRAM processing method. Washington, DC: U.S. Patent and Trademark Office.

Gruverman, A. (2002). Ferroelectric film property measuring device, measuring method therefor and measuring method for semiconductor memory units. Washington, DC: U.S. Patent and Trademark Office.

Tiwari, A., Wang, H., Kumar, D., & Narayan, J. (2002). Weak-localization effect in single crystal TaN(001) films. Modern Physics Letters. B, Condensed Matter Physics, Statistical Physics, Applied Physics, 16(28-29), 1143–1149. https://doi.org/10.1142/s0217984902004688

Jinnai, H., Nishikawa, Y., Ito, M., Smith, S. D., Agard, D. A., & Spontak, R. (2002). Topological similarity of sponge-like bicontinuous morphologies differing in length scale. Advanced Materials, 14(22), 1615–1618. https://doi.org/10.1002/1521-4095(20021118)14:22<1615::AID-ADMA1615>3.0.CO;2-S

Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2002). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. Washington, DC: U.S. Patent and Trademark Office.

Gehrke, T., Linthicum, K. J., & Davis, R. F. (2002). Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby. Washington, DC: U.S. Patent and Trademark Office.

Gonzalez, J. C., Da Silva, M. I. N., Griffis, D. P., & Russell, P. E. (2002). Improvements in focused ion beam micromachining of interconnect materials. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(6), 2700–2704. https://doi.org/10.1116/1.1515310

English, R. J., Laurer, J. H., Spontak, R., & Khan, S. (2002). Hydrophobically modified associative polymer solutions: Rheology and microstructure in the presence of nonionic surfactants. Industrial & Engineering Chemistry Research, 41(25), 6425–6435. https://doi.org/10.1021/ie020409s

Gehrke, T., Linthicum, K. J., Davis, R. F., & Thomson, D. B. (2002). High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates. Washington, DC: U.S. Patent and Trademark Office.

Siripurapu, S., Gay, Y. J., Royer, J. R., Desimone, J. M., Spontak, R., & Khan, S. (2002). Generation of microcellular foams of PVDF and its blends using supercritical carbon dioxide in a continuous process. Polymer, 43(20), 5511–5520. https://doi.org/10.1016/S0032-3861(02)00407-X

Lopatin, S., Pennycook, S. J., Narayan, J., & Duscher, G. (2002). Z-contrast imaging of dislocation cores at the GaAs/Si interface. Applied Physics Letters, 81(15), 2728–2730. https://doi.org/10.1063/1.1511808

Fan, Y. Y., Nieh, R. E., Lee, J. C., Lucovsky, G., Brown, G. A., Register, L. F., & Banerjee, S. K. (2002). Voltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor. IEEE Transactions on Electron Devices, 49(11), 1969–1978. https://doi.org/10.1109/TED.2002.804713

Kumar, D., Pennycook, S. J., Lupini, A., Duscher, G., Tiwari, A., & Narayan, J. (2002). Synthesis and atomic-level characterization of Ni nanoparticles in Al2O3 matrix. Applied Physics Letters, 81(22), 4204–4206. https://doi.org/10.1063/1.1525052

Yushin, G. N., Wolter, S. D., Kvit, A. V., Collazo, R., Stoner, B. R., Prater, J. T., & Sitar, Z. (2002). Study of fusion bonding of diamond to silicon for silicon-on- diamond technology. Applied Physics Letters, 81(17), 3275–3277. https://doi.org/10.1063/1.1516636

Stemmer, S., Klenov, D. O., Chen, Z. Q., Niu, D., Ashcraft, R. W., & Parsons, G. N. (2002). Reactions of Y2O3 films with (001) Si substrates and with polycrystalline Si capping layers. Applied Physics Letters, 81(4), 712–714. https://doi.org/10.1063/1.1496500

Kim, T. J., Ihn, Y. S., Kim, Y. D., Kim, S. J., Aspnes, D. E., Yao, T., … Koo, B. H. (2002). Pseudodielectric functions of InGaAs alloy films grown on InP. Applied Physics Letters, 81(13), 2367–2369. https://doi.org/10.1063/1.1509093

Bergman, L., Chen, X. B., Mcilroy, D., & Davis, R. F. (2002). Probing the AlxGa1-xN spatial alloy fluctuation via UV- photoluminescence and Raman at submicron scale. Applied Physics Letters, 81(22), 4186–4188. https://doi.org/10.1063/1.1526918

Zhang, X., Wang, H., Scattergood, R. O., Narayan, J., & Koch, C. C. (2002). Modulated oscillatory hardening and dynamic recrystallization in cryomilled nanocrystalline Zn. Acta Materialia, 50(16), 3995–4004. https://doi.org/10.1016/S1359-6454(02)00199-4

Raghuveer, M. S., Yoganand, S. N., Jagannadham, K., Lemaster, R. L., & Bailey, J. (2002). Improved CVD diamond coatings on WC-Co tool substrates. Wear, 253(11-12), 1194–1206. https://doi.org/10.1016/S0043-1648(02)00244-2

Narayan, J., & Oktyabrsky, S. (2002). Formation of misfit dislocations in thin film heterostructures. Journal of Applied Physics, 92(12), 7122–7127. https://doi.org/10.1063/1.1521789

Linthicum, K. J., Gehrke, T., & Davis, R. F. (2002). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office.

Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2002). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office.

Kasic, A., Schubert, M., Einfeldt, S., & Hommel, D. (2002). Infrared spectroscopic ellipsometry - a new tool for characterization of semiconductor heterostructures. Vibrational Spectroscopy, 29(1-2), 121–124. https://doi.org/10.1016/S0924-2031(01)00197-7

Qu, J., Shih, A. J., & Scattergood, R. O. (2002). Development of the cylindrical wire electrical discharge machining process, part 2: Surface integrity and roundness. Journal of Manufacturing Science and Engineering, 124(3), 708–714. https://doi.org/10.1115/1.1475989

Zhang, X., Wang, H., Scattergood, R. O., Narayan, J., Koch, C. C., Sergueeva, A. V., & Mukherjee, A. K. (2002). Tensile elongation (110%) observed in ultrafine-grained Zn at room temperature. Applied Physics Letters, 81(5), 823–825. https://doi.org/10.1063/1.1494866

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., Schuck, J., Grober, R., & Davis, R. F. (2002). Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy. Opto-Electronics Review, 10(4), 261–270.

DeSimone, J. M., Khan, S. A., Royer, J. R., Spontak, R. J., & Walker, T. A. (2002). Method of making foamed materialsUSing surfactants and carbon dioxide. Washington, DC: U.S. Patent and Trademark Office.

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002). Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence. IEEE Journal of Quantum Electronics, 38(8), 1006–1016. https://doi.org/10.1109/JQE.2002.801005

Rightor, E. G., Urquhart, S. G., Hitchcock, A. P., Ade, H., Smith, A. P., Mitchell, G. E., … Lidy, W. E. (2002). Identification and quantitation of urea precipitates in flexible polyurethane foam formulations by X-ray spectromicroscopy. Macromolecules, 35(15), 5873–5882. https://doi.org/10.1021/ma0122627

Niu, D., Ashcraft, R. W., Chen, Z., Stemmer, S., & Parsons, G. N. (2002). Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon. Applied Physics Letters, 81(4), 676–678. https://doi.org/10.1063/1.1496138

Narayan, J., Wang, H., Ye, J. L., Hon, S. J., Fox, K., Chen, J. C., … Fan, J. C. C. (2002). Effect of thickness variation in high-efficiency InGaN/GaN light-emitting diodes. Applied Physics Letters, 81(5), 841–843. https://doi.org/10.1063/1.1496145

Conrad, H., & Yang, D. (2002). Effect of an electric field on the plastic deformation kinetics of electrodeposited Cu at low and intermediate temperatures. Acta Materialia, 50(11), 2851–2866. https://doi.org/10.1016/S1359-6454(02)00109-X

Qu, J., Shih, A. J., & Scattergood, R. O. (2002). Development of the cylindrical wire electrical discharge machining process, part 1: Concept, design, and material removal rate. Journal of Manufacturing Science and Engineering, 124(3), 702–707. https://doi.org/10.1115/1.1475321

Tombak, A., Maria, J. P., Ayguavives, F. T., Jin, Z., Stauf, G. T., Kingon, A. I., & Mortazawi, A. (2002). Tunable barium strontium titanate thin film capacitors for RF and microwave applications. IEEE Microwave and Wireless Components Letters, 12(1), 3–5. https://doi.org/10.1109/7260.975716

Gougousi, T., Kelly, M. J., & Parsons, G. N. (2002). The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions. Applied Physics Letters, 80(23), 4419–4421. https://doi.org/10.1063/1.1485122

Danielsson, E., Zetterling, C. M., Ostling, M., Linthicum, K., Thomson, D. B., Nam, O. H., & Davis, R. F. (2002). The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions. Solid-State Electronics, 46(6), 827–835. https://doi.org/10.1016/S0038-1101(01)00346-X

Boehme, C., & Lucovsky, G. (2002). Origins of silicon solar cell passivation by SiNx: H anneal. Journal of Non-Crystalline Solids, 299(2002 Apr 1), 1157–1161. https://doi.org/10.1016/S0022-3093(01)01135-8

Kasic, A., Schubert, M., Off, J., Scholz, F., Einfeldt, S., & Hommel, D. (2002). Optical phonons in hexagonal AlxInyGa1-x-yN (y approximate to 0.12). Physica Status Solidi. B, Basic Solid State Physics, 234(3), 970–974.

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002). Maskless pendeo-epitaxial growth of GaN films. Journal of Electronic Materials, 31(5), 421–428. https://doi.org/10.1007/s11664-002-0095-6

Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Massengill, L. W., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2002). Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation. IEEE Transactions on Nuclear Science, 49(6), 3045–3050. https://doi.org/10.1109/TNS.2002.805389

Collazo, R., Schlesser, R., & Sitar, Z. (2002). Experimental observation of electron velocity overshoot in AlN. Applied Physics Letters, 81(27), 5189–5191. https://doi.org/10.1063/1.1534407

Usov, I., Parikh, N., Thomson, D. B., & Davis, R. F. (2002). Effect of implantation temperature on damage accumulation in Ar-implanted GaN. MRS Internet Journal of Nitride Semiconductor Research, 7(9), 9–1.

Lucovsky, G. (2002). Correlations between electronic structure of transition metal atoms and performance of high-k gate dielectrics in advanced Si devices. Journal of Non-Crystalline Solids, 303(1), 40–49. https://doi.org/10.1016/S0022-3093(02)00962-6

Glinka, Y. D., Wang, W., Singh, S. K., Marka, Z., Rashkeev, S. N., Shirokaya, Y., … Lucovsky, G. (2002). Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation. Physical Review. B, Condensed Matter and Materials Physics, 65(19), 193103–193101.

Lucovsky, G. (2002). Amorphous morphology, thermal stability and electronic structure of non-crystalline transition-metal elemental and binary oxides, and chalcogenides. Journal of Non-Crystalline Solids, 299(2002 Apr 1), 231–237. https://doi.org/10.1016/S0022-3093(01)01162-0

Gupta, A., Yang, H., & Parsons, G. N. (2002). Ab initio analysis of silyl precursor physisorption and hydrogen abstraction during low temperature silicon deposition. Surface Science, 496(3), 307–317. https://doi.org/10.1016/S0039-6028(01)01467-4

Osburn, C. M., Kim, I., Han, S. K., De, I., Yee, K. F., Gannavaram, S., … Ozturk, M. C. (2002). Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? IBM Journal of Research and Development, 46(2-3), 299–315. https://doi.org/10.1147/rd.462.0299

Felix, J. A., Fleetwood, D. M., Schrimpf, R. D., Hong, J. G., Lucovsky, G., Schwank, J. R., & Shaneyfelt, M. R. (2002). Total-dose radiation response of hafnium-silicate capacitors. IEEE Transactions on Nuclear Science, 49(6), 3191–3196. https://doi.org/10.1109/TNS.2002.805392

Raghothamachar, B., Vetter, W. M., Dudley, M., Dalmau, R., Schlesser, R., Sitar, Z., … Kolis, J. W. (2002). Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN. Journal of Crystal Growth, 246(3-4), 271–280. https://doi.org/10.1016/S0022-0248(02)01751-7

Tiwari, A., Jin, C., Kvit, A., Kumar, D., Muth, J. F., & Narayan, J. (2002). Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1-xMnxO films. Solid State Communications, 121(6-7), 371–374. https://doi.org/10.1016/S0038-1098(01)00464-1

Karoui, A., Karoui, F. S., Kvit, A., Rozgonyi, G. A., & Yang, D. (2002). Role of nitrogen related complexes in the formation of defects in silicon. Applied Physics Letters, 80(12), 2114–2116. https://doi.org/10.1063/1.1462874

Rodriguez, B. J., Gruverman, A., Kingon, A. I., & Nemanich, R. J. (2002). Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials. Journal of Crystal Growth, 246(3-4), 252–258. https://doi.org/10.1016/S0022-0248(02)01749-9

Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2002). Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces. Journal of Applied Physics, 91(2), 732–738. https://doi.org/10.1063/1.1424060

Kim, S. H., Park, D. Y., Woo, H. J., Lee, D. S., Ha, J., Hwang, C. S., … Kingon, A. I. (2002). Orientation effects in chemical solution derived Pb(Zr-0.3,Ti- 0.7)O-3 thin films on ferroelectric properties. Thin Solid Films, 416(1-2), 264–270. https://doi.org/10.1016/S0040-6090(02)00726-5

Narayan, J., Sharma, A. K., Kvit, A., Jin, C., Muth, J. F., & Holland, O. W. (2002). Novel cubic ZnxMg1-xO epitaxial hetero structures on Si (100) substrates. Solid State Communications, 121(1), 9–13.

Leonard, D. N., Russell, P. E., Smith, S. D., & Spontak, R. (2002). Multiscale dewetting of low-molecular-weight block copolymer ultrathin films. Macromolecular Rapid Communications, 23(3), 205–209. https://doi.org/10.1002/1521-3927(20020201)23:3<205::AID-MARC205>3.0.CO;2-X

Frankland, S. J. V., Caglar, A., Brenner, D. W., & Griebel, M. (2002). Molecular simulation of the influence of chemical cross-links on the shear strength of carbon nanotube-polymer interfaces. https://doi.org/10.1021/jp015591+

Wei, M., Davis, W., Urban, B., Song, Y. Q., Porbeni, F. E., Wang, X. W., … Tonelli, A. E. (2002). Manipulation of nylon-6 crystal structures with its alpha- cyclodextrin inclusion complex. Macromolecules, 35(21), 8039–8044. https://doi.org/10.1021/ma020765m

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