Materials Science and Engineering

Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects

MICROELECTRONICS RELIABILITY, Vol. 43, pp. 1417–1426.

Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices

Lucovsky, G., Raynor, G. B., Zhang, Y., Fulton, C. C., Nemanich, R. J., Appel, G., … Whitten, J. L. (2003, May 15). APPLIED SURFACE SCIENCE, Vol. 212, pp. 563–569.

Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers

JOURNAL OF CRYSTAL GROWTH, 258(1-2), 75–83.

Device-quality GaN-dielectric interfaces by 300 degrees C remote plasma processing

Bae, C., Rayner, G. B., & Lucovsky, G. (2003, June 30). APPLIED SURFACE SCIENCE, Vol. 216, pp. 119–123.

Contributions to the infrared effective charges of oxides and chalcogenides from equilibrium charge and dynamic charge redistribution during normal mode motions

Sremaniak, L. S., Whitten, J. L., Menon, M., & Lucovsky, G. (2003, May 15). APPLIED SURFACE SCIENCE, Vol. 212, pp. 839–843.

Band offset energies in zirconium silicate Si alloys

Lucovsky, G., Rayner, B., Zhang, Y., Appel, G., & Whitten, J. (2003, June 30). APPLIED SURFACE SCIENCE, Vol. 216, pp. 215–222.

A novel technique for making self-encapsulated and self-aligned copper films

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 103(1), 45–48.

Thermal conductivity of epitaxially textured diamond films

DIAMOND AND RELATED MATERIALS, 12(1), 61–64.

Study of the dielectric function of ZnS by spectroscopic ellipsometry

Journal of the Korean Physical Society, 42(2003 Feb), S238–241.

Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

SOLID-STATE ELECTRONICS, 47(1), 71–76.

Optical properties of InGaAs alloy films in the E-2 region by spectroscopic ellipsometry

Journal of the Korean Physical Society, 42(2003 Feb), S242–245.

Electron energy distribution during high-field transport in AlN

JOURNAL OF APPLIED PHYSICS, 93(5), 2765–2771.

Combined atomic force microscopy and scanning tunneling microscopy imaging of cross-sectioned GaN light-emitting diodes

Scanning, 25(1), 45–51.

Local electrostatic effects of surface structure on field emission

JOURNAL OF APPLIED PHYSICS, 93(1), 691–697.

Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC

Physical Review. B, Condensed Matter and Materials Physics, 67(4), 045321–045321.

Voltage-controlled RF filters employing thin-film barium-strontium-titanate tunable capacitors

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 51(2), 462–467.

Response to "Comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 91, 732 (2002)]"

Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2003, March 15). JOURNAL OF APPLIED PHYSICS, Vol. 93, pp. 3679–3679.

Plasma plume characteristics and properties of pulsed laser deposited diamond-like carbon films

JOURNAL OF APPLIED PHYSICS, 93(6), 3627–3634.

Grinding temperature measurements in magnesia-partially-stabilized zirconia using infrared spectrometry

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 86(2), 333–341.

Fibrous structures on diamond and carbon surfaces formed by hydrogen plasma under direct current bias and field electron-emission properties

JOURNAL OF MATERIALS RESEARCH, 18(2), 305–326.