Materials Science and Engineering

Formation of dispersed nanostructures from poly(ferrocenyldimethylsilane-b-dimethylsiloxane) nanotubes upon exposure to supercritical carbon dioxide

LANGMUIR, 20(21), 9304–9314.

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers

Applied Surface Science, 234(37990), 240–245.

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004, September 20). SURFACE SCIENCE, Vol. 566, pp. 1185–1189.

Effects of an electric field and current on phase transformations in metals and ceramics

MATERIALS AND MANUFACTURING PROCESSES, Vol. 19, pp. 573–585.

Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity

Rayner, G. B., Kang, D., Hinkle, C. L., Hong, J. G., & Lucovsky, G. (2004, April). MICROELECTRONIC ENGINEERING, Vol. 72, pp. 304–309.

Calculation of bulk third-harmonic generation from crystalline Si with the simplified bond hyperpolarizability model

PHYSICAL REVIEW B, 70(16).

A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys

Lucovsky, G., Rayner, G. B., Kang, D., Hinkle, C. L., & Hong, J. G. (2004, July 15). APPLIED SURFACE SCIENCE, Vol. 234, pp. 429–433.

A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys

Lucovsky, G., Rayner, G. B., Kang, D., Hinkle, C. L., & Hong, J. G. (2004, September 20). SURFACE SCIENCE, Vol. 566, pp. 772–776.

A self-consistent tight binding model for hydrocarbon systems: application to quantum transport simulation

JOURNAL OF PHYSICS-CONDENSED MATTER, 16(39), 6851–6866.

A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004, April). MICROELECTRONIC ENGINEERING, Vol. 72, pp. 257–262.

Spectroscopic characterization of high k dielectrics: Applications to interface electronic structure and stability against chemical phase separation

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 1301–1308.

Secondary ion mass spectrometry backside analysis of barrier layers for copper diffusion

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 22, pp. 350–354.

Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100)

APPLIED PHYSICS LETTERS, 84(4), 580–582.

Influence of relative wafer rotation on the electrical properties of the bonded SiC/SiC interface

APPLIED PHYSICS LETTERS, 84(20), 3993–3995.

Homoepitaxial growth of (0001)- and (000(1)over-bar)-oriented ZnO thin films via metalorganic vapor-phase epitaxy and their characterization

JOURNAL OF CRYSTAL GROWTH, 265(3-4), 390–398.

Ab initio theory calculations of the electronic structure of nc-AS(2)S(3) and GeS2: an intrinsic mechanism for reversible photo-darkening

Journal of Non-Crystalline Solids, 338-40(Jun 15 2004), 543–547.

Ultratough nanocrystalline copper with a narrow grain size distribution

APPLIED PHYSICS LETTERS, 85(6), 929–931.

The effect of interfacial layers on high-performance gate dielectrics processed by RTP-ALD

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(8), G507–G511.

TaN-TiN binary alloys and superlattices as diffusion barriers for copper interconnections (vol 33, pg 1, 2004)

Wang, H., Gupta, A., Tiwari, A., Zhang, X., & Narayan, J. (2004, January). JOURNAL OF ELECTRONIC MATERIALS, Vol. 33, pp. L5–L5.

Structure and stability of columnar cyclomaltohexaose (alpha-cyclodextrin) hydrate

CARBOHYDRATE RESEARCH, 339(17), 2805–2810.