Materials Science and Engineering

Cathodoluminescence studies of the deep level emission bands of AlxGa1-xN films deposited on 6H-SiC(0001)

JOURNAL OF APPLIED PHYSICS, 83(1), 469–475.

Anomalous sorption in a poly(styrene-b-isoprene) diblock copolymer near the order-disorder transition

MACROMOLECULES, 31(3), 937–940.

Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

JOURNAL OF MATERIALS RESEARCH, 13(7), 1816–1822.

X-ray microscopy characterization of a thermoplastic / liquid crystalline polymer blend produced by mechanical alloying

Macromolecular Rapid Communications, 19(1998), 557.

Monolayer incorporation of nitrogen at Si-SiO2 interfaces: Interface characterization and electrical properties

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 356–364.

Mechanisms of field emission from diamond coated Mo emitters

Schlesser, R., McClure, M. T., McCarson, B. L., & Sitar, Z. (1998, February). DIAMOND AND RELATED MATERIALS, Vol. 7, pp. 636–639.

Low-temperature (<450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering (vol 15, pg 1035, 1997)

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(1), 207.

Intermetallic matrix composites prepared by mechanical alloying - a review

Koch, C. C. (1998, March 31). MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, Vol. 244, pp. 39–48.

Influence of an electric field on the plastic deformation of polycrystalline NaCl at elevated temperatures

ACTA MATERIALIA, 46(6), 1963–1968.

Impurity gettering to secondary defects created by MeV ion implantation in silicon

JOURNAL OF APPLIED PHYSICS, 84(5), 2459–2465.

Hydrogen abstraction kinetics and crystallization in low temperature plasma deposition of silicon

APPLIED PHYSICS LETTERS, 72(4), 456–458.

Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy

Jarrendahl, K., Smith, S. A., Zheleva, T., Kern, R. S., & Davis, R. F. (1998, March). VACUUM, Vol. 49, pp. 189–191.

Flat-flame diamond CVD: the effect of pressure and operating conditions for specific applications

Wolden, C. A., Davis, R. F., Sitar, Z., & Prater, J. T. (1998, February). DIAMOND AND RELATED MATERIALS, Vol. 7, pp. 133–138.

Field emission energy distribution analysis of wide-band-gap field emitters

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(2), 689–692.

Electron emission from metal-diamond (100), (111) and (110) interfaces

Baumann, P. K., & Nemanich, R. J. (1998, February). DIAMOND AND RELATED MATERIALS, Vol. 7, pp. 612–619.

Domain patterns in epitaxial rhombohedral ferroelectric films. I. Geometry and experiments

JOURNAL OF APPLIED PHYSICS, 83(5), 2742–2753.

Domain pattern formation in epitaxial rhombohedral ferroelectric films. II. Interfacial defects and energetics

JOURNAL OF APPLIED PHYSICS, 83(5), 2754–2765.

Defects and interfaces in epitaxial ZnO/alpha-Al2O3 and AlN/ZnO/alpha-Al2O3, heterostructures

JOURNAL OF APPLIED PHYSICS, 84(5), 2597–2601.

A positron annihilation study of the evolution of amorphization in Nb3Sn by mechanical milling

Journal of Non-Crystalline Solids, 234(1998 July), 594–599.

Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy

Journal of Crystal Growth, 183(4), 581–593.