Displaying works 201 - 220 of 296 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2004 journal article
Spectroscopic ellipsometric analysis of interfaces: Comparison of alloy and effective-medium-approximation approaches to a CdMgTe multilayer system
APPLIED PHYSICS LETTERS, 85(6), 946–948.
2004 journal article
Selective etching of GaN from AlGaN/GaN and AlN/GaN structures
MRS Internet Journal of Nitride Semiconductor Research, 9(5).
2004 article
Processing and thermal properties of highly oriented diamond thin films
Wolter, S. D., Borca-Tasciuc, D., Chen, G., Prater, J. T., & Sitar, Z. (2004, December 22). THIN SOLID FILMS, Vol. 469, pp. 105–111.
2004 journal article
Postdeposition reactivity of sputter-deposited high-dielectric-constant films with ambient H2O and carbon-containing species
JOURNAL OF APPLIED PHYSICS, 95(3), 1391–1396.
Contributors: T. Gougousi n & G. Parsons n
2004 journal article
Plasma characteristics in pulsed direct current reactive magnetron sputtering of aluminum nitride thin films
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(2), 260–263.
2004 journal article
Oxygen precipitate denuded zone in polycrystalline sheet silicon
APPLIED PHYSICS LETTERS, 85(7), 1178–1180.
2004 patent
Non-crystalline oxides for use in microelectronic, optical, and other applications
Washington, DC: U.S. Patent and Trademark Office.
2004 journal article
Morphological, mechanical and gas-transport characteristics of crosslinked poly(propylene glycol): homopolymers, nanocomposites and blends
POLYMER, 45(17), 5941–5950.
2004 journal article
Mechanobiology of mandibular distraction osteogenesis: experimental analyses with a rat model
BONE, 34(2), 336–343.
2004 journal article
Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation\
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2411–2418.
2004 journal article
Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2402–2410.
2004 journal article
Influence of additives and pulse electrodeposition parameters on production of nanocrystalline zinc from zinc chloride electrolytes
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(2), C103–C111.
2004 journal article
Highly CO2-permeable and -selective membranes derived from crossfinked poly(ethylene glycol) and its nanocomposites
ADVANCED FUNCTIONAL MATERIALS, 14(7), 699–707.
2004 journal article
High efficiency GaN-based LEDs and lasers on SiC
Journal of Crystal Growth, 272(04-Jan), 242–250.
2004 journal article
Growth of single-phase c-axis aligned La1.2Ca1.8Mn2O7 films on SrTiO3(001)
SOLID STATE COMMUNICATIONS, 132(12), 863–866.
2004 journal article
Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2379–2383.
2004 journal article
Effect of post-metallization annealing for alternative gate stack devices
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(2), F29–F35.
2004 journal article
Direct observation of substitutional Au atoms in SrTiO3
Physical Review. B, Condensed Matter and Materials Physics, 70(17).
2004 journal article
Bulk and interface charge in low temperature silicon nitride for thin film transistors on plastic substrates
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2256–2260.
Contributors: K. Park n & G. Parsons n
2004 journal article
Band alignment between (100)Si and complex rare earth/transition metal oxides
APPLIED PHYSICS LETTERS, 85(24), 5917–5919.
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