Materials Science and Engineering

Bond constraint theory studies of chalcogenide phase change memories

Journal of Non-Crystalline Solids, 354(19-25), 2706–2710.

Transition layers at the SiO2/SiC interface

Applied Physics Letters, 93(2).

Thermal conductivity of semi-insulating, p-type, and n-type GaN films on sapphire

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 26(3), 375–379.

Synthesis and properties of barium titanate stannate thin films by chemical solution deposition

JOURNAL OF MATERIALS SCIENCE, 43(12), 4264–4270.

Seeded growth of AlN on SiC substrates and defect characterization

JOURNAL OF CRYSTAL GROWTH, 310(10), 2464–2470.

Retardation of grain growth and cavitation by an electric field during superplastic deformation of ultrafine-grained 3Y-TZP at 1,450-1,600 degrees C

Yang, D., & Conrad, H. (2008, July). JOURNAL OF MATERIALS SCIENCE, Vol. 43, pp. 4475–4482.

Plasma instabilities in magnetically assisted pulsed laser deposition

Journal of Physics D: Applied Physics, 41(11), 115206.

Observation of room temperature ferromagnetism in Ga:ZnO: A transition metal free transparent ferromagnetic conductor

Applied Physics Letters, 93(2), 021912.

Newtonian viscous creep in Ti-3Al-2.5V

PHILOSOPHICAL MAGAZINE, 88(9), 1357–1367.

Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition

APPLIED PHYSICS LETTERS, 93(2).

Model dielectric functions for AlxGa1-xAs alloys of arbitrary compositions

JOURNAL OF APPLIED PHYSICS, 104(1).

Isolation of human mesenchymal stem cells from bone and adipose tissue

[Review of ]. Stem cell culture, 86, 257–278.

Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 104(1).

Impact of thermal annealing on deep-level defects in strained-Si/SiGe heterostructure

Journal of Applied Physics, 103(10).

Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric

APPLIED PHYSICS LETTERS, 92(24).

Direct Observation of Inversion Domain Boundaries of GaN onc-Sapphire at Sub-ångstrom Resolution

Advanced Materials, 20(11), 2162–2165.

Dependence of plasmon polaritons on the thickness of indium tin oxide thin films

Journal of Applied Physics, 103(9), 093108.

Conformal metal oxide coatings on nanotubes by direct low temperature metal-organic pyrolysis in supercritical carbon dioxide

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26(3), 978–982.

Analysis of V defects in GaN-based light emitting diodes by scanning transmission electron microscopy and electron beam induced current

Applied Physics Letters, 92(24).

The nearly aligned rotating-monoplate compensator

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 205(4), 739–742.