Materials Science and Engineering

Fracture behavior of laser-modified ceramic materials

Materials Letters, 7(9-10), 303–315.

Critical thickness during three-dimensional epitaxial growth-A self-consistent approach

Materials Science and Engineering A, 113(C), 65–73.

A STATISTICAL-THEORY OF COMPOSITE-MATERIALS STRENGTH

JOURNAL OF COMPOSITE MATERIALS, 23(3), 280–287.

Thin‐film deposition by a new laser ablation and plasma hybrid technique

Applied Physics Letters, 54(24), 2455–2457.

In situ processing of epitaxial Y‐Ba‐Cu‐O high Tc superconducting films on (100) SrTiO3and (100) YS‐ZrO2 substrates at 500–650 °C

Applied Physics Letters, 54(22), 2271–2273.

A novel method for simulating laser-solid interactions in semiconductors and layered structures

Materials Science and Engineering: B, 3(3), 217–230.

Reduction of defects by high temperature (180 degrees c-240 degrees c) annealing in room temperature deposited hydrogenated amorphous silicon

Journal of Non-Crystalline Solids, 114.

Precursors for the deposition of amorphous silicon hydrogen alloys by remote plasma enhanced CVD

Journal of Vacuum Science & Technology, A(7), 1124–1129.

Mass and optical emission spectroscopic studies of the gas phase during the deposition of SiO2 and a-Si:H by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology, A(7), 1115–1123.

Dependence of the chemical, electrical and photoelectronic properties of a-Si:H/Si3N4 interfaces on the deposition sequence

Journal of Non-Cyrstalline Solids, 114.

Defects in a-Si:H films produced by remote plasma enhanced CVD

Journal of Non-Crystalline Solids, 107, 295–300.

SYNTHESIS AND REACTIVITY OF ANIONIC TETRAOSMIUM CLUSTERS ON HIGHLY DEHYDROXYLATED MGO

LAMB, H. H., HASSELBRING, L. C., DYBOWSKI, C., & GATES, B. C. (1989, November 15). JOURNAL OF MOLECULAR CATALYSIS, Vol. 56, pp. 36–49.

SURFACE-MEDIATED ORGANOMETALLIC SYNTHESIS - PREPARATION OF [OS5C(CO)14]2- AND [OS10C(CO)24]2- ON THE BASIC MAGNESIUM-OXIDE SURFACE

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 111(22), 8367–8373.

SUPPORTED METALS AND SUPPORTED ORGANOMETALLICS

JOURNAL OF MOLECULAR CATALYSIS, 52(1), 1–18.

Metal-insulator-semiconductor capacitor formed on silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

Dry etching of silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

EFFECTS OF THE NEAREST NEIGHBORS AND THE ALLOY MATRIX ON SIH STRETCHING VIBRATIONS IN THE AMORPHOUS SIOR-H (0-LESS-THAN-R-LESS-THAN-2) ALLOY SYSTEM

PHYSICAL REVIEW B, 40(3), 1795–1805.

GROWTH OF CUBIC PHASE GALLIUM NITRIDE BY MODIFIED MOLECULAR-BEAM EPITAXY

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 7(3), 701–705.

MATERIALS SYNTHESIS BY MECHANICAL ALLOYING

[Review of ]. ANNUAL REVIEW OF MATERIALS SCIENCE, 19, 121–143.