Materials Science and Engineering

Works Published in 1995

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Displaying works 21 - 33 of 33 in total

Sorted by most recent date added to the index first, which may not be the same as publication date order.

1995 journal article

FALSIFICATION OF ACTIVATION-ENERGIES BY PORE DIFFUSION IN PARALLEL REACTION NETWORKS

JOURNAL OF CATALYSIS, 154(2), 364–370.

By: G. Roberts n & H. Lamb n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1995 journal article

ELECTRON CYCLOTRON-RESONANCE PLASMA REACTOR FOR SIO2 ETCHING - PROCESS DIAGNOSTICS, END-POINT DETECTION, AND SURFACE CHARACTERIZATION

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 13(4), 2035–2043.

By: Z. Wan n, J. Liu n & H. Lamb n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1995 patent

Germanium doped n-type aluminum nitride epitaxial layers

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis & C. Wang

Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Nucleation enhancement for chemical vapor deposition of diamond

Washington, DC: U.S. Patent and Trademark Office.

By: B. Stoner, J. Glass, W. Hooke & B. Williams

Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Thin film ferroelectric flat panel display devices, and methods for operating and fabricating same

Washington, DC: U.S. Patent and Trademark Office.

By: O. Auciello & G. McGuire

Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Method of fabricating oriented diamond films on nondiamond substrates and related structures

Washington, DC: U.S. Patent and Trademark Office.

By: W. Zhu, P. Yang & J. Glass

Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Single crystal titanium nitride epitaxial on silicon

Washington, DC: U.S. Patent and Trademark Office.

By: J. Narayan

Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, C. Carter & C. Hunter

Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Method of forming platinum ohmic contact to p-type silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

By: R. Glass, J. Palmour, R. Davis & L. Porter

Source: NC State University Libraries
Added: August 6, 2018

1995 journal article

Pulsed-laser ablation synthesis and characterization of layered pt/srbi2ta2o9/pt ferroelectric capacitors with practically no polarization fatigue

Applied Physics Letters, 67(4), 572–574.

By: R. Dat, J. Lee, O. Auciello & A. Kingon

Source: NC State University Libraries
Added: August 6, 2018

1995 book

The materials science of microelectronics

New York: VCH.

Source: NC State University Libraries
Added: August 6, 2018

1995 journal article

Exact stress states and velocity fields in bicrystals at the yield point in channel die compression

Zeitschrift Fur Angewandte Mathematik Und Physik, 46, 446–465.

By: S. Wu & K. Havner

Source: NC State University Libraries
Added: August 6, 2018

1995 conference paper

An analytical investigation of inhomogeneous straining, subgrain formation, and the initiation of microshear bands in bicrystals

In D. F. Parker & A. H. England (Eds.), IUTAM Symposium on Anisotropy, Inhomogeneity and Nonlinearity in Solid Mechanics: Proceedings of the IUTAM-ISIMM symposium held in Nottingham, U.K., 30 August-3 September 1994 (pp. 211–216). Dordrecht; Boston: Kluwer Academic.

By: K. Havner & S. Wu

Ed(s): . D. F. Parker & A. England

Source: NC State University Libraries
Added: August 6, 2018

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