Materials Science & Engineering

Dynamic rate and thickness metrology during polysilicon RTCVD from SiH4 using real-time in-situ mass spectrometry

Journal of Vacuum Science & Technology, A(14), 267–270.

Ab initio calculation of hydrogen abstraction energetics from silicon hydrides

JOURNAL OF CHEMICAL PHYSICS, 105(13), 5467–5471.

The effect of reversibility on the selectivity of parallel reactions in a porous catalyst

CHEMICAL ENGINEERING SCIENCE, 51(3), 441–448.

Pd/silica cluster catalysts: Synthesis and reactivity with H-2 and C2H4

CATALYSIS LETTERS, 40(3-4), 155–161.

Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy

Washington, DC: U.S. Patent and Trademark Office.

Oriented diamond film structures on non-diamond substrates

Washington, DC: U.S. Patent and Trademark Office.

Method for forming a diamond coated field emitter and device produced thereby

Washington, DC: U.S. Patent and Trademark Office.

Diamond films on nondiamond substrates

Washington, DC: U.S. Patent and Trademark Office.

Hybrid metal/metal oxide electrodes for ferroelectric capacitors

Washington, DC: U.S. Patent and Trademark Office.

Strain-related phenomena in GaN thin films

Physical Review. B, Condensed Matter and Materials Physics, 54(24), 17745–17753.

Materials science: A multimedia approach

Growth of bulk AIN and GaN single crystals by sublimation

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 41–46. Pittsburgh, Pa.: Materials Research Society.

A comparative study of hardening theories in torsion using the Taylor polycrystal model

INTERNATIONAL JOURNAL OF PLASTICITY, 12(5), 695–718.