Materials Science & Engineering

Towards (predictive) structure-property relationships for heterophase interfaces in oxides

In Boundaries & Interfaces in Materials: the David A. Smith Symposium (pp. 169–177). http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000072465300020&KeyUID=WOS:000072465300020

Three-dimensional atomic structure of NiO-ZrO2(cubic) interfaces

Acta Materialia, 46(5), 1801–1816.

Reversible intercalation of charged iodine chains into carbon nanotube ropes

Physical Review Letters, 80(25), 5560–5563.

Chemical attachment of organic functional groups to single-walled carbon nanotube material

Journal of Materials Research, 13(9), 2423–2431.

A remotely interrogatable magnetochemical sensor for environmental monitoring

In 1998 Ieee Aerospace Conference Proceedings, Vol 5 (pp. 87–92). http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000074665200008&KeyUID=WOS:000074665200008

In-situ mass spectrometry for real-time uniformity sensing in ECR silicon dioxide etching

Journal of Vacuum Science & Technology, B(16), 2996–3002.

Modulated-structure of PZT/PT ferroelectric thin films for non-volatile random access memories

Washington, DC: U.S. Patent and Trademark Office.

Thin film optical measurement system and method with calibrating ellipsometer

Washington, DC: U.S. Patent and Trademark Office.

On velocity discontinuities in elastoplastic bicrystals in channel die compression

INTERNATIONAL JOURNAL OF PLASTICITY, 14(1-3), 61–74.

On the stress state at the yield point in symmetric bicrystals in (110) channel die compression

MECHANICS OF MATERIALS, 27(4), 211–227.

Microstructure and IR range optical properties of pure DLC and DLC containing dopants prepared by pulsed laser deposition

Advances in laser ablation of materials: Symposium held April 13-16, 1998, San Francisco, California, U.S.A. (Materials Research Society symposia proceedings ; v. 526)., 331. Warrendale, Pa.: Materials Research Society.

Growth of high quality single crystal ZnO films on sapphire by pulsed laser ablation

Advances in laser ablation of materials: Symposium held April 13-16, 1998, San Francisco, California, U.S.A. (Materials Research Society symposia proceedings ; v. 526)., 305. Warrendale, Pa.: Materials Research Society.

Germanium nanostructures fabricated by pulsed laser deposition

Microcrystalline and nanocrystalline semiconductors--1998: symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.

Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures

APPLIED PHYSICS LETTERS, 73(9), 1206–1208.

Materials properties and characterization of SiC

SIC MATERIALS AND DEVICES, 52, 1–20.

The behavior of SIMCON under ballistic loading: An analytical study

Silicon epitaxy on Si(100) with adsorbed oxygen

Electrochemical and Solid State Letters, 1(2), 80–82.

Broadband spectral operation of a rotating-compensator ellipsometer

Opsal, J., Fanton, J., Chen, J., Leng, J., Wei, L., Uhrich, C., … Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 58–61.

Analytic representations of the dielectric functions of crystalline and amorphous Si and crystalline Ge for very large scale integrated device and structural modeling

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 16, pp. 1654–1657.

Thermal expansion of GaN and AlN

Nitride semiconductors: Symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings; v. 482)., 863–868. Warrendale, Pa.: Materials Research Society, 1998.