Materials Science and Engineering

Bone-shaped short fiber composites - an overview

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 326(2), 208–227.

Atomic-scale structural investigations on the nucleation of cubic boron nitride from amorphous boron nitride under high pressures and temperatures

CHEMISTRY OF MATERIALS, 14(4), 1873–1878.

Thin film metallic catalyst coatings for the growth of multiwalled carbon nanotubes by pyrolysis of xylene

Carbon, 40(11), 1903–1909.

Self-assembled fabrication of aluminum-silicon nanowire networks

Applied Physics Letters, 81(1), 153–155.

Ru-doped nanostructured carbon films

Diamond and Related Materials, 11(12), 1890–1896.

Room temperature ammonia and humidity sensing using highly ordered nanoporous alumina films

Sensors, 2(3), 91–110.

Molybdenum thin-film growth on rutile titanium dioxide (110)

Surface Science, 506(1-2), 119–128.

Highly ordered nanoporous alumina films: Effect of pore size and uniformity on sensing performance

Journal of Materials Research, 17(5), 1162–1171.

Fabrication of nanoporous TiO₂ films through Benard-Marangoni convection

Materials Research Innovations, 5(3-4), 178–184.

Ab initio calculations of pristine and doped zirconia Σ5 (310)/[001] tilt grain boundaries

Journal of The American Ceramic Society, 85(6), 1594–1600.

Preparation, characterization and applications of free-standing single walled carbon nanotube thin films

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 4(11), 2273–2277.

Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor

Washington, DC: U.S. Patent and Trademark Office.

Field emission from bias-grown diamond thin films in a microwave plasma

Washington, DC: U.S. Patent and Trademark Office.

Thin film optical measurement system and method with calibrating ellipsometer

Washington, DC: U.S. Patent and Trademark Office.

Broadband spectroscopic rotating compensator ellipsometer

Washington, DC: U.S. Patent and Trademark Office.

Structures and methods for enhancing capacitors in integrated circuits

Washington, DC: U.S. Patent and Trademark Office.

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts

Washington, DC: U.S. Patent and Trademark Office.

Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers

Washington, DC: U.S. Patent and Trademark Office.

Method for improving the sidewall stoichiometry of thin film capacitors

Washington, DC: U.S. Patent and Trademark Office.

Integrated capacitors fabricated with conductive metal oxides

Washington, DC: U.S. Patent and Trademark Office.