Materials Science & Engineering

Room temperature ammonia and humidity sensing using highly ordered nanoporous alumina films

Sensors, 2(3), 91–110.

Molybdenum thin-film growth on rutile titanium dioxide (110)

Surface Science, 506(1-2), 119–128. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000175757100017&KeyUID=WOS:000175757100017

Highly ordered nanoporous alumina films: Effect of pore size and uniformity on sensing performance

Journal of Materials Research, 17(5), 1162–1171. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000175414600039&KeyUID=WOS:000175414600039

Fabrication of nanoporous TiO2 films through Benard-Marangoni convection

Materials Research Innovations, 5(3-4), 178–184. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000174224700010&KeyUID=WOS:000174224700010

Ab initio calculations of pristine and doped zirconia Sigma 5 (310)/[001] tilt grain boundaries

Journal of the American Ceramic Society, 85(6), 1594–1600. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000176667400039&KeyUID=WOS:000176667400039

Preparation, characterization and applications of free-standing single walled carbon nanotube thin films

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 4(11), 2273–2277.

Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor

Washington, DC: U.S. Patent and Trademark Office.

Field emission from bias-grown diamond thin films in a microwave plasma

Washington, DC: U.S. Patent and Trademark Office.

Thin film optical measurement system and method with calibrating ellipsometer

Washington, DC: U.S. Patent and Trademark Office.

Broadband spectroscopic rotating compensator ellipsometer

Washington, DC: U.S. Patent and Trademark Office.

Structures and methods for enhancing capacitors in integrated circuits

Washington, DC: U.S. Patent and Trademark Office.

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts

Washington, DC: U.S. Patent and Trademark Office.

Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers

Washington, DC: U.S. Patent and Trademark Office.

Method for improving the sidewall stoichiometry of thin film capacitors

Washington, DC: U.S. Patent and Trademark Office.

Integrated capacitors fabricated with conductive metal oxides

Washington, DC: U.S. Patent and Trademark Office.

Dielectric films and methods of forming same

Washington, DC: U.S. Patent and Trademark Office.

Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor

Washington, DC: U.S. Patent and Trademark Office.

Capacitor processing method and DRAM processing method

Washington, DC: U.S. Patent and Trademark Office.

Ferroelectric film property measuring device, measuring method therefor and measuring method for semiconductor memory units

Washington, DC: U.S. Patent and Trademark Office.

Weak-localization effect in single crystal TaN(001) films

Modern Physics Letters. B, Condensed Matter Physics, Statistical Physics, Applied Physics, 16(28-29), 1143–1149.