Materials Science & Engineering

Efficient self-assembly of transition metal oxide nanoclusters on silicon substrates

Thin Solid Films, 492(1-2), 13–18.

Surface-Enhanced Raman Scattering ofp-Aminothiophenol on a Au(core)/Cu(shell) Nanoparticle Assembly

ChemPhysChem, 6(5), 913–918.

Contribution of low-temperature degrees of freedom to the anisotropy in Co/CoO exchange coupled bilayers

Journal of Magnetism and Magnetic Materials, 286, 191–195.

Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition

Journal of Applied Physics, 98(9), 093519.

Donor-acceptor pair emission enhancement in mass-transport-grown GaN

Journal of Applied Physics, 98(3), 033508.

Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates

Journal of Applied Physics, 97(1), 013517.

Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers

Journal of Crystal Growth, 281(1), 55–61.

Optoelectronic devices on bulk GaN

Journal of Crystal Growth, 281(1), 101–106.

Nonpolara-plane HVPE GaN: growth and in-plane anisotropic properties

Physica Status Solidi (c), 2(7), 2027–2031.

Photoluminescence of GaN/AlN superlattices grown by MOCVD

Physica Status Solidi (c), 2(7), 2345–2348.

Thrust force, torque, and tool wear in drilling the bulk metallic glass

International Journal of Machine Tools and Manufacture, 45(7-8), 863–872.

Flow Control through Polymer-Grafted Smart Nanofluidic Channels:  Molecular Dynamics Simulations

Nano Letters, 5(12), 2509–2514.

Evaluation of mechanical properties using shear–punch testing

Materials Science and Engineering: A, 395(1-2), 307–314.

Creep deformation characteristics of tin and tin-based electronic solder alloys

Metallurgical and Materials Transactions A, 36(1), 99–105.

Breakthroughs in Optimization of Mechanical Properties of Nanostructured Metals and Alloys

Advanced Engineering Materials, 7(9), 787–794.

Magnetic properties of Mn-doped GaN andp-i-n junctions

Physica Status Solidi (c), 2(7), 2403–2406.

Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy

Physica Status Solidi (c), 2(7), 2117–2120.

Growth of gallium nitride via iodine vapor phase growth

Physica Status Solidi (c), 2(7), 2129–2132.

Polarity and morphology in seeded growth of bulk AlN on SiC

Physica Status Solidi (c), 2(7), 2036–2039.

Raman, photoluminescence and absorption studies on high quality AlN single crystals

Physica Status Solidi (c), 2(7), 2774–2778.