Materials Science & Engineering

Finite-Size, Fully Addressable DNA Tile Lattices Formed by Hierarchical Assembly Procedures

Angewandte Chemie International Edition, 45(5), 735–739.

Peptides on GaAs Surfaces:  Comparison between Features Generated by Microcontact Printing and Dip-Pen Nanolithography

Langmuir, 22(21), 8670–8674.

Mapping the Interaction Forces between TAR RNA and TAT Peptides on GaAs Surfaces Using Chemical Force Microscopy

Langmuir, 22(4), 1768–1774.

In vitro assessment of the biocompatibility of chemically modified GaAs surfaces

NanoBiotechnology, 2(1-2), 51–59.

Characterization of collagen fibers in Bruch’s membrane using chemical force microscopy

Analytical and Bioanalytical Chemistry, 386(3), 652–657.

Instability and Transport of Metal Catalyst in the Growth of Tapered Silicon Nanowires

Nano Letters, 6(9), 1852–1857.

Formation mechanism of nonspherical gold nanoparticles during seeding growth: Roles of anion adsorption and reduction rate

Journal of Colloid and Interface Science, 293(1), 69–76.

Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates

Journal of Applied Physics, 100(10), 103511.

High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire

Applied Physics Letters, 89(5), 051914.

Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy

Applied Physics Letters, 88(14), 141909.

Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy

Journal of Applied Physics, 99(6), 066105.

Optical properties of nonpolar -plane GaN layers

Superlattices and Microstructures, 40(4-6), 253–261.

Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN

Physica B: Condensed Matter, 376-377, 482–485.

Structural defect-related emissions in nonpolar a-plane GaN

Physica B: Condensed Matter, 376-377, 473–476.

Optical signatures of dopants in GaN

Materials Science in Semiconductor Processing, 9(1-3), 168–174.

Photoluminescence ofa -plane GaN: comparison between MOCVD and HVPE grown layers

Physica Status Solidi (c), 3(6), 1499–1502.

Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing

Physica Status Solidi (c), 3(6), 1475–1478.

The dominant shallow 0.225 eV acceptor in GaN

Physica Status Solidi (b), 243(7), 1604–1608.

Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry ona-plane GaN

Physica Status Solidi (b), 243(7), 1594–1598.

Dissociation of VGa–ON complexes in HVPE GaN by high pressure and high temperature annealing

Physica Status Solidi (b), 243(7), 1436–1440.