Materials Science & Engineering

College of Engineering

Works Published in 2006

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2006 journal article

Finite-Size, Fully Addressable DNA Tile Lattices Formed by Hierarchical Assembly Procedures

Angewandte Chemie International Edition, 45(5), 735–739.

By: S. Park, C. Pistol, S. Ahn, J. Reif, A. Lebeck, C. Dwyer, T. LaBean

Source: Crossref
Added: August 28, 2020

2006 journal article

Peptides on GaAs Surfaces:  Comparison between Features Generated by Microcontact Printing and Dip-Pen Nanolithography

Langmuir, 22(21), 8670–8674.

By: Y. Cho & A. Ivanisevic

Source: Crossref
Added: August 28, 2020

2006 journal article

Mapping the Interaction Forces between TAR RNA and TAT Peptides on GaAs Surfaces Using Chemical Force Microscopy

Langmuir, 22(4), 1768–1774.

By: Y. Cho & A. Ivanisevic

Source: Crossref
Added: August 28, 2020

2006 journal article

In vitro assessment of the biocompatibility of chemically modified GaAs surfaces

NanoBiotechnology, 2(1-2), 51–59.

By: Y. Cho & A. Ivanisevic

Source: Crossref
Added: August 28, 2020

2006 journal article

Characterization of collagen fibers in Bruch’s membrane using chemical force microscopy

Analytical and Bioanalytical Chemistry, 386(3), 652–657.

By: S. Mallick, S. Bhagwandin & A. Ivanisevic

Source: Crossref
Added: August 28, 2020

2006 journal article

Instability and Transport of Metal Catalyst in the Growth of Tapered Silicon Nanowires

Nano Letters, 6(9), 1852–1857.

By: L. Cao, B. Garipcan, J. Atchison, C. Ni, B. Nabet & J. Spanier

Source: Crossref
Added: August 28, 2020

2006 journal article

Formation mechanism of nonspherical gold nanoparticles during seeding growth: Roles of anion adsorption and reduction rate

Journal of Colloid and Interface Science, 293(1), 69–76.

By: L. Cao, T. Zhu & Z. Liu

Source: Crossref
Added: August 28, 2020

2006 journal article

Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates

Journal of Applied Physics, 100(10), 103511.

By: C. Roder, S. Einfeldt, S. Figge, T. Paskova, D. Hommel, P. Paskov, B. Monemar, U. Behn ...

Source: Crossref
Added: August 28, 2020

2006 journal article

High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire

Applied Physics Letters, 89(5), 051914.

By: T. Paskova, R. Kroeger, S. Figge, D. Hommel, V. Darakchieva, B. Monemar, E. Preble, A. Hanser, N. Williams, M. Tutor

Source: Crossref
Added: August 28, 2020

2006 journal article

Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy

Applied Physics Letters, 88(14), 141909.

By: T. Paskova, D. Hommel, P. Paskov, V. Darakchieva, B. Monemar, M. Bockowski, T. Suski, I. Grzegory ...

Source: Crossref
Added: August 28, 2020

2006 journal article

Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy

Journal of Applied Physics, 99(6), 066105.

By: F. Tuomisto, K. Saarinen, T. Paskova, B. Monemar, M. Bockowski & T. Suski

Source: Crossref
Added: August 28, 2020

2006 journal article

Optical properties of nonpolar -plane GaN layers

Superlattices and Microstructures, 40(4-6), 253–261.

By: P. Paskov, T. Paskova, B. Monemar, S. Figge, D. Hommel, B. Haskell, P. Fini, J. Speck, S. Nakamura

Source: Crossref
Added: August 28, 2020

2006 journal article

Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN

Physica B: Condensed Matter, 376-377, 482–485.

By: B. Monemar, P. Paskov, J. Bergman, T. Paskova, C. Hemmingsson, T. Malinauskas, K. Jarasiunas, P. Gibart, B. Beaumont

Source: Crossref
Added: August 28, 2020

2006 journal article

Structural defect-related emissions in nonpolar a-plane GaN

Physica B: Condensed Matter, 376-377, 473–476.

By: P. Paskov, R. Schifano, T. Paskova, T. Malinauskas, J. Bergman, B. Monemar, S. Figge, D. Hommel

Source: Crossref
Added: August 28, 2020

2006 journal article

Optical signatures of dopants in GaN

Materials Science in Semiconductor Processing, 9(1-3), 168–174.

By: B. Monemar, P. Paskov, J. Bergman, A. Toropov, T. Shubina, S. Figge, T. Paskova, D. Hommel ...

Source: Crossref
Added: August 28, 2020

2006 journal article

Photoluminescence ofa -plane GaN: comparison between MOCVD and HVPE grown layers

Physica Status Solidi (c), 3(6), 1499–1502.

By: P. Paskov, R. Schifano, T. Malinauskas, T. Paskova, J. Bergman, B. Monemar, S. Figge, D. Hommel ...

Source: Crossref
Added: August 28, 2020

2006 journal article

Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing

Physica Status Solidi (c), 3(6), 1475–1478.

By: T. Paskova, V. Darakchieva, P. Paskov, B. Monemar, M. Bukowski, T. Suski, N. Ashkenov, M. Schubert, D. Hommel

Source: Crossref
Added: August 28, 2020

2006 journal article

The dominant shallow 0.225 eV acceptor in GaN

Physica Status Solidi (b), 243(7), 1604–1608.

By: B. Monemar, P. Paskov, J. Bergman, T. Paskova, S. Figge, J. Dennemarck, D. Hommel

Source: Crossref
Added: August 28, 2020

2006 journal article

Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry ona-plane GaN

Physica Status Solidi (b), 243(7), 1594–1598.

By: V. Darakchieva, T. Paskova, P. Paskov, H. Arwin, M. Schubert, B. Monemar, S. Figge, D. Hommel ...

Source: Crossref
Added: August 28, 2020

2006 journal article

Dissociation of VGa–ON complexes in HVPE GaN by high pressure and high temperature annealing

Physica Status Solidi (b), 243(7), 1436–1440.

By: F. Tuomisto, S. Hautakangas, I. Makkonen, V. Ranki, M. Puska, K. Saarinen, M. Bockowski, T. Suski ...

Source: Crossref
Added: August 28, 2020