Materials Science & Engineering

Nanoindentation of gold nanoparticles functionalized with proteins

Micron, 40(4), 444–448.

Characterization of amino acid adlayers on InAs surfaces using X-ray photoelectron spectroscopy

Journal of Electron Spectroscopy and Related Phenomena, 172(1-3), 47–53.

Modification of native collagen with cell-adhesive peptide to promote RPE cell attachment on Bruch's membrane

Biotechnology and Bioengineering, 102(6), 1723–1729.

Stoichiometry optimization of homoepitaxial oxide thin films using x-ray diffraction

Applied Physics Letters, 95(14), 142905.

Position Averaged Convergent Beam Electron Diffraction

Microscopy and Microanalysis, 15(S2), 494–495.

Quantitative HAADF Imaging of Crystals Containing Heavy Elements: A Comparison with Theory

Microscopy and Microanalysis, 15(S2), 466–467.

Single crystalline and core–shell indium-catalyzed germanium nanowires—a systematic thermal CVD growth study

Nanotechnology, 20(24), 245608.

Synthesis parameter space of bismuth catalyzed germanium nanowires

Applied Physics Letters, 94(16), 163101.

Ultrafast developments

Nature Photonics, 3(1), 12–13.

Engineering light absorption in semiconductor nanowire devices

Nature Materials, 8(8), 643–647.

On carrier spillover in c- and m-plane InGaN light emitting diodes

Applied Physics Letters, 95(20), 201113.

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

Applied Physics Letters, 95(12), 121107.

Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN

Applied Physics Letters, 95(10), 101106.

Optical characterization of bulk GaN substrates with c -, a -, and m -plane surfaces

Physica Status Solidi (c), 6(S2), S763–S766.

Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics

Physica Status Solidi (c), 6(S2), S344–S347.

Modulation of mobility in homoepitaxially-grown AlGaN/GaN heterostructures

Physica Status Solidi (c), 6(S2), S1037–S1040.

Cathodoluminescence evaluation of subsurface damage in GaN substrate after polishing

Physica Status Solidi (c), 6(S2), S325–S328.

Measuring oxygen, carbon monoxide and hydrogen sulfide diffusion coefficient and solubility in Nafion membranes

Electrochimica Acta, 54(27), 6850–6860.

Structural perfection of InGaN layers and its relation to photoluminescence

Physica Status Solidi (c), 6(12), 2626–2631.

Spontaneous stratification of InGaN layers and its influence on optical properties

Physica Status Solidi (c), 6(S2), S433–S436.