Materials Science & Engineering

A new computer code DM2: Discrete meso-dynamic modeling of shock processes in solids

Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 781–786.

In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 835–840.

The role of hydrogen atoms in metastable defect formation at Si-SiO2 interfaces and in hydrogenated amorphous Si (a-Si:H)

Physica Status Solidi. A, Applications and Materials Science, 159(1997), 5–10.

The introductory course in materials thermodynamics: Strategies toward improved instructional effectiveness

Journal of Materials Education, 19(1997), 47.

High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

APPLIED PHYSICS LETTERS, 71(25), 3631–3633.

Growth of AlN, GaN and AlxGa1-xN thin films on vicinal and on-axis 6H-SiC(0001) substrates

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, Vol. 17, pp. 1775–1779.

Correlation of morphology and electrical properties of nanoscale TiSi2 epitaxial islands on Si (001)

Yang, W., Jedema, F. J., Ade, H., & Nemanich, R. J. (1997, October 31). THIN SOLID FILMS, Vol. 308, pp. 627–633.

Self-organization and polyolefin nucleation efficacy of 1,3:2,4-di-p-methylbenzylidene sorbitol

JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, 35(16), 2617–2628.

Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications

Applied Physics Letters, 71(23), 3388–3390.

Homoepitaxial SiC growth by molecular beam epitaxy

Physica Status Solidi. B, Basic Solid State Physics, 202(1), 379–404.

Harnessing reverse annealing phenomenon for shallow p-n junction formation

JOURNAL OF APPLIED PHYSICS, 82(10), 5185–5190.

Dielectric, pyroelectric and structural properties of LiTaO3 thin films grown on silicon by a modified molecular beam epitaxy

FERROELECTRICS, Vol. 201, pp. 245–253.

X-ray intensity decrease from absorption effects in mechanically milled systems

SCRIPTA MATERIALIA, 36(1), 41–46.

Valence band spectra in pseudomorphically strained wurtzite quantum wells

SUPERLATTICES AND MICROSTRUCTURES, 22(2), 195–198.

The effect of dose rate and implant temperature on transient enhanced diffusion in boron implanted silicon

Jones, K. S., Chen, J., Bharatan, S., Jackson, J., Rubin, L., PugaLambers, M., & Venables, D. (1997, November). JOURNAL OF ELECTRONIC MATERIALS, Vol. 26, pp. 1361–1364.

The dielectric response as a function of temperature and film thickness of fiber-textured (Ba,Sr)TiO3 thin films grown by chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 82(5), 2497–2504.

Synthesis of nanostructured materials by mechanical milling: Problems and opportunities

NANOSTRUCTURED MATERIALS, Vol. 9, pp. 13–22.

Surface modification of chlorobutyl rubber by plasma polymerization

JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, 35(11), 1651–1660.

Surface and interface effects on ellipsometric spectra of crystalline Si

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 15, pp. 1205–1211.