Materials Science and Engineering

Dielectric films and methods of forming same

Washington, DC: U.S. Patent and Trademark Office.

Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor

Washington, DC: U.S. Patent and Trademark Office.

Capacitor processing method and DRAM processing method

Washington, DC: U.S. Patent and Trademark Office.

Ferroelectric film property measuring device, measuring method therefor and measuring method for semiconductor memory units

Washington, DC: U.S. Patent and Trademark Office.

Weak-localization effect in single crystal TaN(001) films

MODERN PHYSICS LETTERS B, 16(28-29), 1143–1149.

Topological similarity of sponge-like bicontinuous morphologies differing in length scale

ADVANCED MATERIALS, 14(22), 1615–1618.

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby

Washington, DC: U.S. Patent and Trademark Office.

Improvements in focused ion beam micromachining of interconnect materials

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 2700–2704.

Hydrophobically modified associative polymer solutions: Rheology and microstructure in the presence of nonionic surfactants

INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH, 41(25), 6425–6435.

High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Washington, DC: U.S. Patent and Trademark Office.

Generation of microcellular foams of PVDF and its blends using supercritical carbon dioxide in a continuous process

POLYMER, 43(20), 5511–5520.

Z-contrast imaging of dislocation cores at the GaAs/Si interface

APPLIED PHYSICS LETTERS, 81(15), 2728–2730.

Voltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor

IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(11), 1969–1978.

Synthesis and atomic-level characterization of Ni nanoparticles in Al2O3 matrix

APPLIED PHYSICS LETTERS, 81(22), 4204–4206.

Study of fusion bonding of diamond to silicon for silicon-on-diamond technology

APPLIED PHYSICS LETTERS, 81(17), 3275–3277.

Reactions of Y2O3 films with (001) Si substrates and with polycrystalline Si capping layers

APPLIED PHYSICS LETTERS, 81(4), 712–714.

Pseudodielectric functions of InGaAs alloy films grown on InP

APPLIED PHYSICS LETTERS, 81(13), 2367–2369.

Probing the AlxGa1-xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale

APPLIED PHYSICS LETTERS, 81(22), 4186–4188.

Modulated oscillatory hardening and dynamic recrystallization in cryomilled nanocrystalline Zn

ACTA MATERIALIA, 50(16), 3995–4004.